Добавил:

student_tipo Опубликованный материал нарушает ваши авторские права? Сообщите нам.

Вуз:

Балаковский институт техники, технологии и управления

Предмет:

[НЕСОРТИРОВАННОЕ]

Файл:

mrf134rev6

.pdf

Источник:

https://manualmachine.com

Скачиваний:

Добавлен:

06.01.2022

Размер:

210.11 Кб

Скачать

☆

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF134/D

The RF MOSFET Line
RF Power Field-Effect Transistor
N±Channel Enhancement±Mode		MRF134
. . . designed for wideband large±signal amplifier and oscillator applications up
to 400 MHz range.
• Guaranteed 28 Volt, 150 MHz Performance
• Guaranteed 28 Volt, 150 MHz Performance
Output Power = 5.0 Watts
Output Power = 5.0 Watts
Minimum Gain = 11 dB			5.0 W, to 400 MHz
Efficiency Ð 55% (Typical)			N±CHANNEL MOS
• Small±Signal and Large±Signal Characterization		BROADBAND RF POWER
• Small±Signal and Large±Signal Characterization			FET
• Typical Performance at 400 MHz, 28 Vdc, 5.0 W			FET
• Typical Performance at 400 MHz, 28 Vdc, 5.0 W
Output = 10.6 dB Gain
• 100% Tested For Load Mismatch At All Phase Angles
• 100% Tested For Load Mismatch At All Phase Angles
With 30:1 VSWR
• Low Noise Figure Ð 2.0 dB (Typ) at 200 mA, 150 MHz
• Excellent Thermal Stability, Ideally Suited For Class A	D
• Excellent Thermal Stability, Ideally Suited For Class A
Operation
Operation

G			CASE 211±07, STYLE 2



	S


MAXIMUM RATINGS
MAXIMUM RATINGS

Rating		Symbol	Value	Unit

Drain±Source Voltage		VDSS	65	Vdc
Drain±Gate Voltage		VDGR	65	Vdc
(RGS = 1.0 MΩ)
Gate±Source Voltage		VGS	± 40	Vdc
Drain Current Ð Continuous		ID	0.9	Adc
Total Device Dissipation @ TC = 25°C		PD	17.5	Watts
Derate above 25°C			0.1	W/°C

Storage Temperature Range		Tstg	± 65 to +150	°C
THERMAL CHARACTERISTICS

Rating		Symbol	Value	Unit

Thermal Resistance, Junction to Case		RθJC	10	°C/W

Handling and Packaging Ð MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

REV 6

Motorola, Inc. 1994

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Drain±Source Breakdown Voltage (VGS = 0, ID = 5.0 mA)	V(BR)DSS	65		Ð	Ð	Vdc
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)	IDSS	Ð		Ð	1.0	mAdc
Gate±Source Leakage Current (VGS = 20 V, VDS = 0)	IGSS	Ð		Ð	1.0	mAdc
ON CHARACTERISTICS

Gate Threshold Voltage (ID = 10 mA, VDS = 10 V)	VGS(th)	1.0		3.5	6.0	Vdc
Forward Transconductance (VDS = 10 V, ID = 100 mA)	gfs	80		110	Ð	mmhos
DYNAMIC CHARACTERISTICS

Input Capacitance	Ciss	Ð		7.0	Ð	pF
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Output Capacitance	Coss	Ð		9.7	Ð	pF
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance	Crss	Ð		2.3	Ð	pF
(VDS = 28 V, VGS = 0, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS

Noise Figure	NF	Ð		2.0	Ð	dB
(VDS = 28 Vdc, ID = 200 mA, f = 150 MHz)
Common Source Power Gain	Gps					dB
(VDD = 28 Vdc, Pout = 5.0 W, IDQ = 50 mA)
f = 150 MHz (Fig. 1)		11		14	Ð
f = 400 MHz (Fig. 14)		Ð		10.6	Ð

Drain Efficiency (Fig. 1)	h	50		55	Ð	%
(VDD = 28 Vdc, Pout = 5.0 W, f = 150 MHz, IDQ = 50 mA)
Electrical Ruggedness (Fig. 1)	y
(VDD = 28 Vdc, Pout = 5.0 W, f = 150 MHz, IDQ = 50 mA,			No Degradation in Output Power
VSWR 30:1 at all Phase Angles)

R3*	R4				L4
R3*	R4				+ VDD = 28 V
					+ VDD = 28 V
D1	C7		+	C10	C11
			+
	L3	C8	± C9		C12
R2	L3	R5
R2
C5	C6				C4
	R1		L2		RF OUTPUT
			L2
L1
RF INPUT		DUT			C3
C1
C2

*Bias Adjust

C1, C4 Ð Arco 406, 15± 115 pF			L3 Ð 20 Turns, #20 AWG Enamel Wound on R5
C2	Ð Arco 403, 3.0± 35 pF		L4 Ð Ferroxcube VK±200 Ð 19/4B
C3	Ð Arco 402, 1.5± 20 pF		R1	Ð 68 W, 1.0 W Thin Film
C5, C6, C7, C8, C12 Ð 0.1 mF Erie Redcap			R2	Ð 10 k W, 1/4 W
C9	Ð	10 mF, 50 V	R3	Ð 10 Turns, 10 k W Beckman Instruments 8108
C10,		C11 Ð 680 pF Feedthru	R4	Ð 1.8 k W, 1/2 W
D1	Ð 1N5925A Motorola Zener		R5	Ð 1.0 M W, 2.0 W Carbon
L1 Ð 3 Turns, 0.310 ″ ID, #18 AWG Enamel, 0.2″ Long			Board Ð G10, 62 mils

L2 Ð 3±1/2 Turns, 0.310 ″ ID, #18 AWG Enamel, 0.25″	Long
Figure 1. 150 MHz Test Circuit

MRF134	MOTOROLA RF DEVICE DATA
2

	10
(WATTS)					f = 100 MHz
	8				150
					225
					400
POWER					400
	6

, OUTPUT	4
, OUTPUT
out	2				VDD = 28 V
P	2				VDD = 28 V
					IDQ = 50 mA
	0	200	400	600	800	1000
	0	200	400	600	800	1000

Pin, INPUT POWER (MILLWATTS)

Figure 2. Output Power versus Input Power

	5
(WATTS)	4				f = 100 MHz
					f = 100 MHz

POWER	3				150
	3				225
					225

, OUTPUT	2				400
	2

out	1				VDD = 13.5 V
P	1				VDD = 13.5 V
					IDQ = 50 mA
	0	200	400	600	800	1000
	0	200	400	600	800	1000

Pin, INPUT POWER (MILLWATTS)

Figure 3. Output Power versus Input Power

	8					Pin = 600 mW					8						Pin = 800 mW
						Pin = 600 mW		300 mW									Pin = 800 mW
(WATTS)								300 mW		(WATTS)
	6										6							400 mW

POWER								150 mW		POWER
POWER	4									POWER	4							200 mW
, OUTPUT	2							IDQ = 50 mA		, OUTPUT	2							IDQ = 50 mA
out	2							IDQ = 50 mA		out	2							IDQ = 50 mA
out								f = 100 MHz		out								f = 150 MHz
P										P

	0	14	16	18	20	22	24	26	28		0	14	16	18	20	22	24	26	28
	12	14	16	18	20	22	24	26	28		12	14	16	18	20	22	24	26	28
			VDD, SUPPLY VOLTAGE (VOLTS)										VDD, SUPPLY VOLTAGE (VOLTS)

Figure 4. Output Power versus Supply Voltage

Figure 5. Output Power versus Supply Voltage

Pout, OUTPUT POWER (WATTS)

Pin = 800 mW

400 mW

200 mW

IDQ = 50 mA

f = 225 MHz

12	14	16	18	20	22	24	26	28
		VDD, SUPPLY VOLTAGE (VOLTS)

Figure 6. Output Power versus Supply Voltage

Pout, OUTPUT POWER (WATTS)

Pin = 800 mW

6IDQ = 50 mA f = 400 MHz

400 mW

200 mW

0	14	16	18	20	22	24	26	28
12

VDD, SUPPLY VOLTAGE (VOLTS)

Figure 7. Output Power versus Supply Voltage

MOTOROLA RF DEVICE DATA	MRF134
	3

Pout, OUTPUT POWER (WATTS)

6								500
5	VDD = 28 V						(MILLAMPS)					VDS = 10 V
5	IDQ = 50 mA							400				VDS = 10 V
4	Pin = CONSTANT			f = 400 MHz
	Pin = CONSTANT			f = 400 MHz
								300
					150 MHz		CURRENT	300
3							CURRENT	200


2							,DRAIN
							,DRAIN	100	TYPICAL DEVICE SHOWN,
1				TYPICAL DEVICE SHOWN,			D	100	VGS(th) = 3.5 V
							D
							I
0				VGS(th) = 3.5 V
0	±1	0	1	2	3	4	5	0 0	1	2	3	4	5	6	7	8
± 2	±1	0	1	2	3	4	5	0 0	1	2	3	4	5	6	7	8
	VGS, GATE±SOURCE VOLTAGE (VOLTS)									VGS, GATE±SOURCE VOLTAGE (VOLTS)
	Figure 8. Output Power versus Gate Voltage								Figure 9. Drain Current versus Gate Voltage

(Transfer Characteristics)

VGS, GATE-SOURCE VOLTAGE (NORMALIZED)

1.02			VDD = 28 V					50
			VDD = 28 V				(dB)
1					IDQ = 200 mA		(dB)
1					IDQ = 200 mA		GAIN	40
							GAIN
							AVAILABLE
0.96						100 mA	AVAILABLE		(1 ± \|S11\|2) (1 ± \|S22\|2)
0.98						100 mA			\|S21\|2
								30	\|S21\|2
							MAXIMUM,		GMAX =
0.94						50 mA	MAXIMUM,	20
						50 mA		20

0.92							MAX	10	VDS = 28 V
0.92							MAX		VDS = 28 V
							G		ID = 100 mAdc
0.9	0	25	50	75	100	125	150	0	10	100	1000
± 25	0	25	50	75	100	125	150	1	10	100	1000
		TC, CASE TEMPERATURE (°C)							f, FREQUENCY (MHz)

Figure 10. Gate±Source Voltage versus	Figure 11. Maximum Available Gain
Case Temperature	versus Frequency

	28								1
	24						VGS = 0 V		0.7
	24						f = 1 MHz	(AMPS)	0.5
(pF)	20								0.3
	20
									0.2
C,CAPACITANCE								DRAINCURRENT	0.2
	16
									0.1
	12						Coss		0.07
							Coss		0.05
	8						C		0.05
	8						iss	,	0.03
								D
								I
	4						Crss		0.02
	4						Crss
	0	4	8	12	16	20	24	28	0.01
	0	4	8	12	16	20	24	28

VDS, DRAIN±SOURCE VOLTAGE (VOLTS)

				TC = 25°C
1	2	5	10	20	50	70	100
		VDS, DRAIN±SOURCE VOLTAGE (VOLTS)

Figure 12. Capacitance versus Voltage	Figure 13. Maximum Rated Forward Biased
	Safe Operating Area

MRF134	MOTOROLA RF DEVICE DATA
4

	R3*		R4			L2
	R3*		R4	C11				VDD = 28 V
				+	C12	C13		VDD = 28 V
		D1	C9	+			C14
		D1	C9	±			C14
			C10	±
		R2	L1
		R2
	C7		C8		Z4		Z5	C6
			R1					RF OUTPUT
C1	Z1	Z2	Z3
RF INPUT						C4		C5
				DUT		C4		C5
		C2		DUT
		C2	C3

*Bias Adjust

C1, C6 Ð 270 pF, ATC 100 mils

C2, C3, C4, C5 Ð 0±20 pF Johanson

C7, C9, C10, C14 Ð 0.1 mF Erie Redcap, 50 V C8 Ð 0.001 mF

C11 Ð 10 mF, 50 V

C12, C13 Ð 680 pF Feedthru

D1 Ð 1N5925A Motorola Zener

L1 Ð 6 Turns, 1/4 ″ ID, #20 AWG Enamel L2 Ð Ferroxcube VK±200 Ð 19/4B

R1 Ð 68 W, 1.0 W Thin Film

R2 Ð 10 k W, 1/4 W

R3 Ð 10 Turns, 10 k W Beckman Instruments 8108 R4 Ð 1.8 k W, 1/2 W

Z1 Ð 1.4 ″ x 0.166″ Microstrip

Z2 Ð 1.1 ″ x 0.166″ Microstrip

Z3 Ð 0.95 ″ x 0.166″ Microstrip

Z4 Ð 2.2 ″ x 0.166″ Microstrip

Z5 Ð 0.85 ″ x 0.166″ Microstrip Board Ð Glass Teflon, 62 mils

Figure 14. 400 MHz Test Circuit

	400
			VDD = 28 V, IDQ = 50 mA, Pout = 5.0 W
	225	Zo = 50 W	f	Zin{		ZOL*
	225	Zo = 50 W	MHz	Ohms		Ohms
	Zin{		MHz	Ohms		Ohms
	Zin{		100	21.2	± j25.4	20.1 ± j46.7
	150		100	21.2	± j25.4	20.1 ± j46.7
	150		150	14.6	± j22.1	19.2 ± j38.2
			150	14.6	± j22.1	19.2 ± j38.2
	400		225	9.1	± j18.8	17.5 ± j33.5
	f = 100 MHz		400	6.4	± j10.8	16.9 ± j26.9
225	f = 100 MHz
225			{68 W Shunt Resistor Gate±to±Ground
			{68 W Shunt Resistor Gate±to±Ground
150	ZOL*		ZOL* = Conjugate of the optimum load impedance
			ZOL* = into which the device output operates at a
f = 100 MHz			ZOL* = given output power, voltage and frequency.

Figure 15. Large±Signal Series Equivalent

Input/Output Impedances, Zin², ZOL*

MOTOROLA RF DEVICE DATA	MRF134
	5

f		S11			S21			S12			S22
(MHz)	\|S11\|		± φ	\|S21\|		± φ	\|S12\|		± φ	\|S22\|		± φ
1.0	0.989		± 1.0	11.27		179	0.0014		89	0.954		± 1.0

2.0	0.989		± 2.0	11.27		179	0.0028		89	0.954		± 2.0

5.0	0.988		± 5.0	11.26		176	0.0069		86	0.954		± 4.0

10	0.985		± 10	11.20		173	0.014		83	0.951		± 9.0

20	0.977		± 20	10.99		166	0.027		76	0.938		± 18

30	0.965		± 30	10.66		159	0.039		69	0.918		± 26

40	0.950		± 39	10.25		153	0.051		63	0.895		± 34

50	0.931		± 47	9.777		147	0.060		57	0.867		± 42

60	0.912		± 53	9.359		142	0.069		53	0.846		± 49

70	0.892		± 58	8.960		138	0.077		49	0.828		± 56

80	0.874		± 62	8.583		135	0.085		46	0.815		± 62

90	0.855		± 66	8.190		131	0.091		43	0.801		± 68

100	0.833		± 70	7.808		128	0.096		40	0.785		± 74

110	0.827		± 73	7.661		125	0.101		38	0.784		± 77

120	0.821		± 76	7.515		122	0.107		36	0.784		± 82

130	0.814		± 79	7.368		119	0.113		34	0.784		± 85

140	0.808		± 82	7.222		116	0.119		32	0.783		± 88

150	0.802		± 86	7.075		114	0.125		31	0.783		± 90

160	0.788		± 89	6.810		112	0.127		30	0.780		± 92

170	0.774		± 92	6.540		110	0.128		28	0.774		± 94

180	0.763		± 94	6.220		108	0.130		26	0.762		± 98

190	0.751		± 97	5.903		106	0.132		24	0.760		± 100

200	0.740		± 100	5.784		104	0.134		23	0.758		± 103

225	0.719		± 104	5.334		100	0.136		20	0.757		± 107

250	0.704		± 108	4.904		97	0.139		19	0.758		± 110

275	0.687		± 113	4.551		92	0.141		16	0.757		± 114

300	0.673		± 117	4.219		89	0.141		14	0.750		± 117

325	0.668		± 120	3.978		86	0.142		12	0.757		± 120

350	0.669		± 123	3.737		83	0.142		10	0.766		± 121

375	0.662		± 125	3.519		80	0.143		9.0	0.768		± 123

400	0.654		± 127	3.325		77	0.142		8.0	0.772		± 124

425	0.650		± 129	3.170		75	0.140		7.0	0.772		± 125

450	0.638		± 131	3.048		72	0.141		6.0	0.783		± 125

475	0.614		± 132	2.898		71	0.136		6.0	0.786		± 126

500	0.641		± 133	2.833		68	0.136		5.0	0.795		± 127

525	0.638		± 135	2.709		66	0.135		5.0	0.801		± 127

550	0.633		± 137	2.574		64	0.133		4.0	0.802		± 128

575	0.628		± 138	2.481		62	0.131		5.0	0.805		± 128

600	0.625		± 140	2.408		60	0.129		5.0	0.814		± 128

The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134 input port.												(continued)
The scattering parameters were measured on the MRF134 device alone with no external components.

Table 1. Common Source Scattering Parameters

VDS = 28 V, ID = 100 mA

MRF134	MOTOROLA RF DEVICE DATA
6

f		S11			S21		S12			S22
(MHz)	\|S11\|		± φ	\|S21\|		± φ	\|S12\|	± φ	\|S22\|		± φ
625	0.619		± 142	2.334		58	0.128	5.0	0.818		± 129

650	0.617		± 144	2.259		56	0.125	6.0	0.824		± 130

675	0.618		± 146	2.192		55	0.123	7.0	0.834		± 130

700	0.619		± 147	2.124		53	0.122	8.0	0.851		± 131

725	0.618		± 150	2.061		51	0.120	9.0	0.859		± 132

750	0.614		± 152	1.983		49	0.118	11	0.857		± 133

775	0.609		± 154	1.908		48	0.119	13	0.865		± 133

800	0.562		± 155	1.877		49	0.118	15	0.872		± 133

825	0.587		± 156	1.869		46	0.119	16	0.869		± 134

850	0.593		± 158	1.794		44	0.118	18	0.875		± 135

875	0.597		± 160	1.749		43	0.119	18	0.881		± 135

900	0.598		± 162	1.700		41	0.118	18	0.889		± 136

925	0.592		± 164	1.641		40	0.115	18	0.888		± 138

950	0.588		± 166	1.590		39	0.112	20	0.877		± 138

975	0.586		± 168	1.572		39	0.108	23	0.864		± 137

1000	0.590		± 171	1.551		37	0.107	28	0.863		± 137

The Power RF characterization data were measured with a 68 ohm resistor shunting the MRF134 input port. The scattering parameters were measurd on the MRF134 device alone with no external components.

Table 1. Common Source Scattering Parameters (continued)

VDS = 28 V, ID = 100 mA

MOTOROLA RF DEVICE DATA	MRF134
	7

			+ j50
	+ j25					+ j100
							+ j150
+ j10							+ j250
							+ j500
0	10	25	50	100	150	250	500
0		f = 1000 MHz
		f = 1000 MHz
							± j500
± j10		500					± j250
± j10		500
		400
		300	200			50	± j150
			200	100		50
			150	100		± j100
	± j25					± j100
	± j25

± j50

Figure 16. S11, Input Reflection Coefficient

versus Frequency

VDS = 28 V		ID = 100 mA
	+ 90°
°		+ 60°
+120
100	150
+150°	200	+ 30°
+150°		+ 30°
f = 50 MHz	S21	300
	S21	400
		500
.10		1000
180° 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0		0°
°		± 30°
±150
±120°		± 60°
±120°
	± 90°

Figure 18. S21, Forward Transmission Coefficient versus Frequency

VDS = 28 V ID = 100 mA

	+ 90°
°		+ 60°
+120
+150°		S12		+ 30°
+150°				+ 30°
	100	150
	50	200
	50		300
	f = 1000		300
.20	f = 1000		500
.20	MHz
180° .18 .16 .14 .12 .10 .08 .06 .04 .02	MHz			0°
°				± 30°
±150
±120°		± 60°
±120°	± 90°
	± 90°

Figure 17. S12, Reverse Transmission Coefficient versus Frequency

VDS = 28 V ID = 100 mA

			+ j50
	+ j25					+ j100
							+ j150
+ j10							+ j250
							+ j500
0	10	25	50	100	150	250	500
0
							± j500
± j10							± j250
± j10	f = 1000 MHz
	f = 1000 MHz		S22				50 ± j150
	500		S22				50 ± j150
	500	300	200 150	100	80	± j100
	± j25

± j50

Figure 19. S22, Output Reflection Coefficient versus Frequency

VDS = 28 V ID = 100 mA

MRF134	MOTOROLA RF DEVICE DATA
8

DESIGN CONSIDERATIONS

The MRF134 is a RF power N±Channel enhancement mode field±effect transistor (FET) designed especially for VHF power amplifier and oscillator applications. Motorola RF MOS FETs feature a vertical structure with a planar design, thus avoiding the processing difficulties associated with V±groove vertical power FETs.

Motorola Application Note AN±211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs.

The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal, thus facilitating manual gain control, ALC and modulation.

DC BIAS

The MRF134 is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. See Figure 9 for a typical plot of drain current versus gate voltage. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF134 was characterized at IDQ = 50 mA, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters.

The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system.

GAIN CONTROL

Power output of the MRF134 may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. (See Figure 8.)

AMPLIFIER DESIGN

Impedance matching networks similar to those used with bipolar VHF transistors are suitable for MRF134. See Motorola Application Note AN721, Impedance Matching Networks Applied to RF Power Transistors. The higher input impedance of RF MOS FETs helps ease the task of broadband network design. Both small signal scattering parameters and large signal impedances are provided. While the s±parameters will not produce an exact design solution for high power operation, they do yield a good first approximation. This is an additional advantage of RF MOS power FETs.

RF power FETs are triode devices and, therefore, not unilateral. This, coupled with the very high gain of the MRF134, yields a device capable of self oscillation. Stability may be achieved by techniques such as drain loading, input shunt resistive loading, or output to input feedback. The MRF134 was characterized with a 68±ohm input shunt loading resistor. Two port parameter stability analysis with the MRF134 s±parameters provides a useful±tool for selection of loading or feedback circuitry to assure stable operation. See Motorola Application Note AN215A for a discussion of two port network theory and stability.

Input resistive loading is not feasible in low noise applications. The MRF134 noise figure data was generated in a circuit with drain loading and a low loss input network.

MOTOROLA RF DEVICE DATA	MRF134
	9

PACKAGE DIMENSIONS

S K

A
U		NOTES:
M		1. DIMENSIONING AND TOLERANCING PER ANSI
M		Y14.5M, 1982.
M		2. CONTROLLING DIMENSION: INCH.
M			INCHES		MILLIMETERS
			INCHES		MILLIMETERS
4		DIM	MIN	MAX	MIN	MAX
4		A	0.960	0.990	24.39	25.14
	B	A	0.960	0.990	24.39	25.14
R	B	B	0.370	0.390	9.40	9.90
		C	0.229	0.281	5.82	7.13
		D	0.215	0.235	5.47	5.96
3		E	0.085	0.105	2.16	2.66
3		H	0.150	0.108	3.81	4.57
		H	0.150	0.108	3.81	4.57
D		J	0.004	0.006	0.11	0.15
D		K	0.395	0.405	10.04	10.28
		M	40	50	40	50
		Q	0.113	0.130	2.88	3.30
		R	0.245	0.255	6.23	6.47
		S	0.790	0.810	20.07	20.57
		U	0.720	0.730	18.29	18.54

		STYLE 2:
	J	PIN 1.	SOURCE
		2.	GATE
	C	3.	SOURCE
H	C	4.	DRAIN
H	E	SEATING
		PLANE

CASE 211±07

ISSUE N

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:

USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.

EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.

ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

◊	MRF134/D
	MRF134/D

Соседние файлы в папке СВЧ

#
06.01.2022104.02 Кб2mrf10350rev1.pdf
#
06.01.2022103.34 Кб2mrf1035mbrev0.pdf
#
06.01.2022106.62 Кб2mrf10500rev6.pdf
#
06.01.2022107.15 Кб2mrf1090marev8.pdf
#
06.01.2022131.29 Кб2mrf1150marev8.pdf
#
06.01.2022210.11 Кб2mrf134rev6.pdf
#
06.01.2022291.5 Кб2mrf136rev6.pdf
#
06.01.2022201.2 Кб2mrf137rev6.pdf
#
06.01.2022167.81 Кб2mrf140rev8.pdf
#
06.01.2022146.77 Кб2mrf141grev2d.pdf
#
06.01.2022164.49 Кб2mrf141rev8.pdf