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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF174/D

The RF MOSFET Line
RF Power Field Effect Transistor
N±Channel Enhancement±Mode		MRF174
. . . designed primarily for wideband large±signal output and driver stages up to
200 MHz frequency range.
• Guaranteed Performance at 150 MHz, 28 Vdc
• Guaranteed Performance at 150 MHz, 28 Vdc
Output Power = 125 Watts
Output Power = 125 Watts
Minimum Gain = 9.0 dB		125 W, to 200 MHz
Efficiency = 50% (Min)		N±CHANNEL MOS
• Excellent Thermal Stability, Ideally Suited For Class A		BROADBAND RF POWER
• Excellent Thermal Stability, Ideally Suited For Class A		FET
Operation		FET
Operation
• Facilitates Manual Gain Control, ALC and Modulation
• Facilitates Manual Gain Control, ALC and Modulation
Techniques
Techniques
• 100% Tested For Load Mismatch At All Phase Angles
With 30:1 VSWR
• Low Noise Figure Ð 3.0 dB Typ at 2.0 A, 150 MHz
• Low Noise Figure Ð 3.0 dB Typ at 2.0 A, 150 MHz
D

CASE 211±11, STYLE 2

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain±Source Voltage

VDSS

Vdc

Drain±Gate Voltage

VDGR

Vdc

(RGS = 1.0 MΩ)

Gate±Source Voltage

VGS

± 40

Vdc

Drain Current Ð Continuous

Adc

Total Device Dissipation @ TC = 25°C

270

Watts

Derate above 25°C

1.54

W/°C

Storage Temperature Range

Tstg

± 65 to +150

°C

Operating Junction Temperature

200

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

RθJC

0.65

°C/W

Handling and Packaging Ð MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

REV 7

MOTOROLAMotorola, Inc. 1997RF DEVICE DATA	MRF174
	1

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Drain±Source Breakdown Voltage (VGS = 0, ID = 50 mA)	V(BR)DSS	65		Ð	Ð	Vdc
Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0)	IDSS	Ð		Ð	10	mAdc
Gate±Source Leakage Current (VGS = 20 V, VDS = 0)	IGSS	Ð		Ð	1.0	mAdc
ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)	VGS(th)	1.0		3.0	6.0	Vdc
Forward Transconductance (VDS = 10 V, ID = 3.0 A)	gfs	1.75		2.5	Ð	mhos
DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)	Ciss	Ð		175	Ð	pF
Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)	Coss	Ð		190	Ð	pF
Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)	Crss	Ð		40	Ð	pF
FUNCTIONAL CHARACTERISTICS (Figure 1)

Noise Figure	NF	Ð		3.0	Ð	dB
(VDD = 28 Vdc, ID = 2.0 A, f = 150 MHz)
Common Source Power Gain	Gps	9.0		11.8	Ð	dB
(VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA)
Drain Efficiency	h	50		60	Ð	%
(VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA)
Electrical Ruggedness	y
(VDD = 28 Vdc, Pout = 125 W, f = 150 MHz, IDQ = 100 mA,			No Degradation in Output Power
VSWR 30:1 at all Phase Angles)

						L4
				R2		C12	C13	+
BIAS						R1		+
BIAS								VDD = 28 V
ADJUST	C9	+	D1		C11		C14	VDD = 28 V
R3	C9	C10	D1		C11		C14	±
		±
					RFC1
				R4
RF INPUT	C						C8
RF INPUT	3	L1		L2		L3		RF OUTPUT
		L1		L2		L3
C1	C2	C4		C5	DUT	C6	C7

C1 Ð 15 pF Unelco

C2 Ð Arco 462, 5.0 ± 80 pF

C3 Ð 100 pF Unelco

C4 Ð 25 pF Unelco

C6 Ð 40 pF Unelco

C7 Ð Arco 461, 2.7 ± 30 pF

C5, C8 Ð Arco 463, 9.0 ± 180 pF

C9, C11, C14 Ð 0.1 mF Erie Redcap C10 Ð 50 mF, 50 V

C12, C13 Ð 680 pF Feedthru D1 Ð 1N5925A Motorola Zener

Ð #16 AWG, 1±1/4 Turns, 0.213 ″ ID

Ð #16 AWG, Hairpin

0.25″

0.062″

Ð #14 AWG, Hairpin

0.47″

0.2″

Ð 10 Turns #16 AWG Enameled Wire on R1

RFC1 Ð 18 Turns #16 AWG Enameled Wire, 0.3 ″ ID

Ð 10 W, 2.0 W

Ð 1.8 k W, 1/2 W

Ð 10 k W, 10 Turn Bourns

Ð 10 k W, 1/4 W

	Figure 1. 150 MHz Test Circuit

MRF174	MOTOROLA RF DEVICE DATA
2

	140		f = 100 MHz
			f = 100 MHz		150 MHz
(WATTS)	120
						200 MHz
	100

POWER	80
POWER
, OUTPUT	60
, OUTPUT	40					VDD = 28 V
out						I	= 100 mA
P	20					DQ
	20
	0	2	4	6	8	10	12	14
	0	2	4	6	8	10	12	14
			Pin, INPUT POWER (WATTS)

	80					f = 100 MHz
	70					f = 100 MHz		150 MHz
(WATTS)	70							150 MHz
	60
								200 MHz
POWER	50							200 MHz
	50
	40
, OUTPUT	30
, OUTPUT	20					VDD = 13.5 V
out	20					I	= 100 mA
out						I	= 100 mA
P	10					DQ
	10
	0	2	4	6	8	10	12	14	16
	0	2	4	6	8	10	12	14	16
				Pin, INPUT POWER (WATTS)

Figure 2. Output Power versus Input Power

Figure 3. Output Power versus Input Power

Pout, OUTPUT POWER (WATTS)

160
160		IDQ =	100 mA
140		IDQ =	100 mA					Pin = 6	W
120		f = 100	MHz
120
100								4	W
100
80
80								2	W
60								2	W
60
40
40
20
0
12	14	16		18	20	22	24	26		28

VDD, SUPPLY VOLTAGE (VOLTS)

	160
(WATTS)	140	IDQ = 100 mA
		f = 150 MHz				Pin = 12 W
	120					Pin = 12 W
	120
						8 W
POWER	100					8 W
	100
	80
,OUTPUT	60					4 W
	60
	40
out	40
out
P
	20
	0
	12	14	16	18	20	22	24	26	28
			VDD, SUPPLY VOLTAGE (VOLTS)

Figure 4. Output Power versus Supply Voltage

Figure 5. Output Power versus Supply Voltage

Pout, OUTPUT POWER (WATTS)

160

140IDQ = 100 mA f = 200 MHz

120

100

					22
					20
		Pin = 16 W			18						Pout = 125 W
		Pin = 16 W		(dB)	16						VDD = 28 V
		12 W		(dB)	16						VDD = 28 V
		12 W		GAIN	14						IDQ = 100 mA
				GAIN
				POWER,
		8 W		POWER,	12
		8 W			12
					10
				PS	8
				G	6
					6
					4
20	22	24	26	28	2	40	60	80	100	120	140	160	180	200	220
20	22	24	26	28	20	40	60	80	100	120	140	160	180	200	220

VDD, SUPPLY VOLTAGE (VOLTS)	f, FREQUENCY (MHz)
Figure 6. Output Power versus Supply Voltage	Figure 7. Power Gain versus Frequency

MOTOROLA RF DEVICE DATA	MRF174
	3

	160
	140	f = 150 MHz
(WATTS)	140	VDD = 28 V
(WATTS)		VDD = 28 V
		Pin = CONSTANT
POWER	120	IDQ = 100 mA
POWER	100
	100
OUTPUT,	80
OUTPUT,	60
	60
out	40
out
P
	20
	0		TYPICAL DEVICE SHOWN, VGS(th) = 3 V
	0	±12 ±10 ± 8			0
	±14	±12 ±10 ± 8	± 6 ± 4	± 2	0	2	4	6

VGS, GATE±SOURCE VOLTAGE (VOLTS)

Figure 8. Output Power versus Gate Voltage

ID, DRAIN CURRENT (AMPS)

4	VDS = 10 V

TYPICAL DEVICE SHOWN, VGS(th) = 3 V

1	2	3	4	5	6
	VGS, GATE±SOURCE VOLTAGE (VOLTS)

Figure 9. Drain Current versus Gate Voltage (Transfer Characteristics)

VOLTAGE(NORMALIZED)	1.2
	1.1					VDD = 28 V
	1.1
	1					ID = 4 A	3 A
-SOURCE	1

								2 A
	0.9
GATE	0.9
GATE								100 mA
,
GS
V	0.8
	0.8	0	25	50	75	100	125	150	175
	± 25	0	25	50	75	100	125	150	175
				TC, CASE TEMPERATURE (°C)

	1000
	900
	800					VGS = 0 V
	800					f = 1 MHz
(pF)						f = 1 MHz
	700

C, CAPACITANCE	600
	500
	400
	300					Coss
	200					Ciss
	100					Crss
	0	4	8	12	16	20	24	28
	0	4	8	12	16	20	24	28

VDS, DRAIN±SOURCE VOLTAGE (VOLTS)

Figure 10. Gate±Source Voltage versus

Figure 11. Capacitance versus Drain Voltage

Case Temperature

	20
	10
(AMPS)	6
(AMPS)	4			TC = 25°C
CURRENT	2			TC = 25°C
	2
	1
DRAIN	0.6
,
D
I
	0.4
	0.2	2	4	6	10	20	40	60	100
	1	2	4	6	10	20	40	60	100

VDS, DRAIN±SOURCE VOLTAGE (VOLTS)

Figure 12. DC Safe Operating Area

MRF174	MOTOROLA RF DEVICE DATA
4

f		S11			S21			S12			S22
(MHz)	\|S11\|		φ	\|S21\|		φ	\|S12\|		φ	\|S22\|		φ
2.0	0.932		± 133	74.0		112	0.011		23	0.835		± 151

5.0	0.923		± 160	31.6		98	0.011		12	0.886		± 168

10	0.921		± 170	16.0		93	0.011		10	0.896		± 174

20	0.921		± 175	8.00		88	0.011		12	0.899		± 177

30	0.921		± 177	5.32		86	0.011		16	0.900		± 178

40	0.921		± 177	3.98		83	0.012		21	0.901		± 178

50	0.922		± 178	3.17		81	0.012		26	0.902		± 178

60	0.923		± 178	2.63		79	0.012		30	0.903		± 178

70	0.924		± 178	2.24		77	0.013		34	0.904		± 178

80	0.925		± 178	1.95		75	0.013		39	0.906		± 178

90	0.927		± 178	1.72		73	0.014		43	0.907		± 178

100	0.930		± 178	1.50		71	0.016		45	0.910		± 178

110	0.930		± 178	1.31		70	0.018		46	0.912		± 178

120	0.931		± 178	1.19		68	0.019		47	0.914		± 178

130	0.942		± 178	1.10		67	0.019		49	0.919		± 178

140	0.936		± 178	1.01		66	0.021		50	0.921		± 178

150	0.938		± 178	0.936		65	0.021		53	0.922		± 178

160	0.938		± 178	0.879		64	0.022		53	0.923		± 178

170	0.940		± 178	0.830		63	0.023		54	0.923		± 177

180	0.942		± 178	0.780		61	0.024		56	0.924		± 177

190	0.942		± 178	0.737		60	0.026		59	0.928		± 177

200	0.952		± 178	0.705		59	0.027		58	0.929		± 177

210	0.950		± 178	0.668		57	0.029		61	0.934		± 177

220	0.942		± 178	0.626		56	0.030		61	0.933		± 177

230	0.943		± 178	0.592		56	0.032		62	0.939		± 177

240	0.946		± 177	0.566		55	0.033		64	0.941		± 177

250	0.952		± 177	0.545		54	0.035		64	0.943		± 177

260	0.958		± 177	0.523		53	0.036		65	0.946		± 177

270	0.956		± 177	0.500		52	0.038		67	0.943		± 177

280	0.960		± 177	0.481		52	0.039		68	0.946		± 177

290	0.956		± 178	0.460		51	0.042		68	0.944		± 177

300	0.955		± 178	0.443		50	0.043		68	0.947		± 177

Table 1. Common Source Scattering Parameters

VDS = 28 V, ID = 3.0 A

MOTOROLA RF DEVICE DATA	MRF174
	5

				+ j50
		+ j25					+ j100
								+ j150
+ j10								+ j250
								+ j250
								+ j500
0	300	10	25	50	100	150	250	500
0	300
	f = 30 MHz							± j500
								± j500
± j10								± j250
± j10
								± j150
		± j25					± j100
		± j25
				± j50

Figure 13. S11, Input Reflection Coefficient

versus Frequency

			VDS = 28 V, ID = 3.0 A
					+ 90° f = 30 MHz
		+120	°		+ 60°
		+120
°					50	+ 30°
°						+ 30°
+150
					100
					150
180° 5	4	3	2	1	300	°
						0
±150°						± 30°
±150°
		±120°			± 60°
		±120°
					± 90°

Figure 15. S21, Forward Transmission Coefficient versus Frequency

VDS = 28 V, ID = 3.0 A

					+ 90°
		°			+ 60°
		+120			300
					300
					250
°						+ 30°
+150					200
					200
					150
					100
180°.05					50
180°.05	.04	.03	.02	.01	f = 30 MHz	°
						0
±150°						± 30°
±150°
		±120°			± 60°
		±120°
					± 90°

Figure 14. S12, Reverse Transmission Coefficient versus Frequency

VDS = 28 V, ID = 3.0 A

			+ j50
	+ j25			+ j100
				+ j150
+ j10				+ j250
				+ j250
				+ j500
0	f = 30 MHz	25	50	100 150 250 500
0
	300			± j500
				± j500
± j10				± j250
± j10
				± j150

± j100

± j25

± j50

Figure 16. S22, Output Reflection Coefficient versus Frequency

VDS = 28 V, ID = 3.0 A

MRF174	MOTOROLA RF DEVICE DATA
6

150	f = 200 MHz
	f = 200 MHz
100		150	f = 200 MHz
100
100				Pout = 125 W, VDD = 28 V
100
Zin
Zin		ZOL*			IDQ = 100 mA
30		ZOL*			IDQ = 100 mA
30				f	Zin	ZOL*
				f	Zin	ZOL*
30				MHz	Ohms	Ohms
30	Zo = 10		Ω
	Zo = 10		Ω	30	2.90 ± j3.95	2.95 ± j3.90
ZOL* = Conjugate of the optimum load impedance				100	1.25 ± j2.90	1.85 ± j1.05
ZOL* = Conjugate of the optimum load impedance				150	1.18 ± j1.40	1.72 ± j0.05
ZOL* = into which the device output operates at a				150	1.18 ± j1.40	1.72 ± j0.05
ZOL* = into which the device output operates at a				200	1.30 ± j0.90	1.70 + j0.25
ZOL* = given output power, voltage and frequency.				200	1.30 ± j0.90	1.70 + j0.25
ZOL* = given output power, voltage and frequency.

Figure 17. Series Equivalent Input/Output Impedance, Zin, ZOL*

MOTOROLA RF DEVICE DATA	MRF174
	7

DESIGN CONSIDERATIONS

The MRF174 is a RF power N±Channel enhancement mode field±effect transistor (FET) designed especially for UHF power amplifier and oscillator applications. Motorola RF MOSFETs feature a vertical structure with a planar design, thus avoiding the processing difficulties associated with V± groove vertical power FETs.

Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs.

The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal, thus facilitating manual gain control, ALC and modulation.

DC BIAS

The MRF174 is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. See Figure 9 for a typical plot of drain current versus gate voltage. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF174 was charac-

terized at IDQ = 100 mA, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters.

The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may generally be just a simple resistive divider network. Some special applications may require a more elaborate bias system.

GAIN CONTROL

Power output of the MRF174 may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems. (See Figure 8.)

AMPLIFIER DESIGN

Impedance matching networks similar to those used with bipolar UHF transistors are suitable for MRF174. See Motorola Application Note AN721, Impedance Matching Networks Applied to RF Power Transistors. The higher input impedance of RF MOSFETs helps ease the task of broadband network design. Both small signal scattering parameters and large signal impedances are provided. While the s±parameters will not produce an exact design solution for high power operation, they do yield a good first approximation. This is an additional advantage of RF MOS power FETs.

MRF174	MOTOROLA RF DEVICE DATA
8

PACKAGE DIMENSIONS

	A		NOTES:
	U		NOTES:
	U		1. DIMENSIONING AND TOLERANCING PER ANSI
	M		1. DIMENSIONING AND TOLERANCING PER ANSI
	M		Y14.5M, 1982.
			2. CONTROLLING DIMENSION: INCH.
1	M			INCHES		MILLIMETERS
Q	M			INCHES		MILLIMETERS
Q	4		DIM	MIN	MAX	MIN	MAX
	4		A	0.960	0.990	24.39	25.14
			A	0.960	0.990	24.39	25.14
	R	B	B	0.465	0.510	11.82	12.95
	R	B	C	0.229	0.275	5.82	6.98
			D	0.216	0.235	5.49	5.96
			E	0.084	0.110	2.14	2.79
2	3		H	0.144	0.178	3.66	4.52
2	3		J	0.003	0.007	0.08	0.17
	D		K	0.435	±±±	11.05	±±±
	D		M	45	NOM	45	NOM
K			M	45	NOM	45	NOM
K			Q	0.115	0.130	2.93	3.30
			R	0.246	0.255	6.25	6.47
J			U	0.720	0.730	18.29	18.54
J

H		C	STYLE 2:
	E	C	PIN 1.	SOURCE
		SEATING	PIN 1.	SOURCE
		SEATING	2.	GATE
		PLANE	3.	SOURCE
			4.	DRAIN

CASE 211±11

ISSUE N

MOTOROLA RF DEVICE DATA	MRF174
	9

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊	MRF174/D
	MOTOROLA RF DEVICE DATA
	MRF174/D

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