MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF282/D
The RF Sub±Micron MOSFET Line |
|
|
|
|
|
|
|
|
|
|
|
|
|
RF Power Field Effect TransistorsMRF282S |
|
||||||||||||
N±Channel Enhancement±Mode Lateral MOSFETs |
MRF282Z |
|
|||||||||||
Designed for class A and class AB PCN and PCS base station applications at |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
amplifier applications. |
|
|
|
10 W, 2000 MHz, 26 V |
|
||||||||
• Specified Two±Tone Performance @ 2000 MHz, 26 Volts |
|
|
|
|
|||||||||
|
|
|
LATERAL N±CHANNEL |
||||||||||
Output Power = 10 Watts (PEP) |
|
|
|
||||||||||
|
|
|
BROADBAND |
|
|||||||||
Power Gain = 11 dB |
|
|
|
|
|||||||||
|
|
|
RF POWER MOSFETs |
|
|||||||||
Efficiency = 30% |
|
|
|
|
|||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Intermodulation Distortion = ±30 dBc |
|
|
|
|
|
|
|
|
|
|
|
|
|
• Specified Single±Tone Performance @ 2000 MHz, 26 Volts |
|
|
|
|
|
|
|
|
|
|
|
|
|
Output Power = 10 Watts (CW) |
|
|
|
|
|
|
|
|
|
|
|
|
|
Power Gain = 11 dB |
|
|
|
|
|
|
|
|
|
|
|
|
|
Efficiency = 40% |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
• Characterized with Series Equivalent Large±Signal |
|
|
|
CASE 458±03, STYLE 1 |
|
||||||||
Impedance Parameters |
|
|
|
|
|||||||||
|
|
|
|
(MRF282S) |
|
||||||||
• S±Parameter Characterization at High Bias Levels |
|
|
|
|
|
||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
• Excellent Thermal Stability |
|
|
|
|
|
|
|
|
|
|
|
|
|
• Capable of Handling 10:1 VSWR, @ 26 Vdc, |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2000 MHz, 10 Watts (CW) Output Power |
|
|
|
CASE 458A±01, STYLE 1 |
|
||||||||
• Gold Metallization for Improved Reliability |
|
|
|
|
|||||||||
|
|
|
|
(MRF282Z) |
|
||||||||
|
|
|
|
|
|
||||||||
MAXIMUM RATINGS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Rating |
|
Symbol |
|
Value |
|
Unit |
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Drain±Source Voltage |
|
VDSS |
|
65 |
|
|
|
|
|
Vdc |
|||
Gate±Source Voltage |
|
VGS |
|
± 20 |
|
|
|
|
|
Vdc |
|||
Total Device Dissipation @ TC = 25°C |
|
PD |
|
60 |
|
|
|
|
|
Watts |
|||
Derate above 25°C |
|
|
|
|
0.34 |
|
|
|
|
|
W/°C |
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Storage Temperature Range |
|
Tstg |
± 65 to +150 |
|
°C |
||||||||
Operating Junction Temperature |
|
|
TJ |
|
200 |
|
|
|
|
|
°C |
||
THERMAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Characteristic |
|
Symbol |
|
Max |
|
Unit |
|||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Thermal Resistance, Junction to Case |
|
RθJC |
|
2.9 |
|
|
|
|
|
°C/W |
|||
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Characteristic |
Symbol |
Min |
Typ |
|
|
|
|
Max |
|
Unit |
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
OFF CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Drain±Source Breakdown Voltage |
V(BR)DSS |
65 |
Ð |
|
|
Ð |
|
Vdc |
|||||
(VGS = 0, ID = 10 μAdc) |
|
|
|
|
|
|
|
|
|
|
|
|
|
Zero Gate Voltage Drain Current |
IDSS |
Ð |
Ð |
|
|
1.0 |
|
μAdc |
|||||
(VDS = 28 Vdc, VGS = 0) |
|
|
|
|
|
|
|
|
|
|
|
|
|
Gate±Source Leakage Current |
IGSS |
Ð |
Ð |
|
|
1.0 |
|
μAdc |
|||||
(VGS = 20 Vdc, VDS = 0) |
|
|
|
|
|
|
|
|
|
|
|
|
|
NOTE ± CAUTION ± MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1
MOTOROLAMotorola, Inc. 1997RF DEVICE DATA |
MRF282S MRF282Z |
|
1 |
ELECTRICAL CHARACTERISTICS continued (TC = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
|
Typ |
Max |
|
Unit |
|
|
|
|
|
|
|
|
ON CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Gate Threshold Voltage |
VGS(th) |
2.0 |
|
3.0 |
4.0 |
|
Vdc |
(VDS = 10 Vdc, ID = 50 μAdc) |
|
|
|
|
|
|
|
Drain±Source On±Voltage |
VDS(on) |
Ð |
|
0.4 |
0.6 |
|
Vdc |
(VGS = 10 Vdc, ID = 0.5 Adc) |
|
|
|
|
|
|
|
Forward Transconductance |
gfs |
0.5 |
|
0.7 |
Ð |
|
S |
(VDS = 10 Vdc, ID = 0.5 Adc) |
|
|
|
|
|
|
|
Gate Quiescent Voltage |
VGS(q) |
3.0 |
|
4.0 |
5.0 |
|
Vdc |
(VDS = 26 Vdc, ID = 75 mAdc) |
|
|
|
|
|
|
|
DYNAMIC CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Input Capacitance |
Ciss |
Ð |
|
15 |
Ð |
|
pF |
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) |
|
|
|
|
|
|
|
Output Capacitance |
Coss |
Ð |
|
8.0 |
Ð |
|
pF |
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) |
|
|
|
|
|
|
|
Reverse Transfer Capacitance |
Crss |
Ð |
|
0.45 |
Ð |
|
pF |
(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz) |
|
|
|
|
|
|
|
FUNCTIONAL TESTS (In Motorola Test Fixture) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Common±Source Power Gain |
Gps |
11 |
|
12.6 |
Ð |
|
dB |
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, |
|
|
|
|
|
|
|
f1 = 2000.0 MHz, f2 = 2000.1 MHz) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Drain Efficiency |
η |
30 |
|
34 |
Ð |
|
% |
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, |
|
|
|
|
|
|
|
f1 = 2000.0 MHz, f2 = 2000.1 MHz) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Intermodulation Distortion |
IMD |
Ð |
|
±32.5 |
±30 |
|
dBc |
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, |
|
|
|
|
|
|
|
f1 = 2000.0 MHz, f2 = 2000.1 MHz) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Input Return Loss |
IRL |
10 |
|
14 |
Ð |
|
dB |
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, |
|
|
|
|
|
|
|
f1 = 2000.0 MHz, f2 = 2000.1 MHz) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Common±Source Power Gain |
Gps |
11 |
|
12.6 |
Ð |
|
dB |
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, |
|
|
|
|
|
|
|
f1 = 1930.0 MHz, f2 = 1930.1 MHz) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Drain Efficiency |
η |
Ð |
|
30 |
Ð |
|
% |
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, |
|
|
|
|
|
|
|
f1 = 1930.0 MHz, f2 = 1930.1 MHz) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Intermodulation Distortion |
IMD |
Ð |
|
±32.5 |
Ð |
|
dBc |
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, |
|
|
|
|
|
|
|
f1 = 1930.0 MHz, f2 = 1930.1 MHz) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Input Return Loss |
IRL |
10 |
|
14 |
Ð |
|
dB |
(VDD = 26 Vdc, Pout = 10 W (PEP), IDQ = 75 mA, |
|
|
|
|
|
|
|
f1 = 1930.0 MHz, f2 = 1930.1 MHz) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Common±Source Power Gain |
Gps |
11 |
|
12.3 |
Ð |
|
dB |
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) |
|
|
|
|
|
|
|
Drain Efficiency |
η |
40 |
|
45 |
Ð |
|
% |
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, f = 2000.0 MHz) |
|
|
|
|
|
|
|
Output Mismatch Stress |
Ψ |
|
|
|
|
|
|
(VDD = 26 Vdc, Pout = 10 W CW, IDQ = 75 mA, |
|
|
No Degradation In Output Power |
|
|||
f1 = 2000.0 MHz, f2 = 2000.1 MHz, Load VSWR = 10:1, |
|
|
|
||||
|
|
|
|
|
|
|
|
All Phase Angles at Frequency of Test) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
MRF282S MRF282Z |
MOTOROLA RF DEVICE DATA |
2 |
|
B4 |
B5 |
B6 |
|
B1 |
|
|
B2 |
|
B3 |
C8 |
C10 |
|
|
|
|
|
|
VGG |
|
|
|
|
|
|
|
|
|
|
|
VDD |
||
+ |
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
+ |
|
|
C1 |
|
C3 |
R2 |
C5 |
R3 |
C9 |
C11 |
R4 |
C14 |
R5 |
C15 |
R6 |
C17 |
|
R1 |
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
L3 |
|
|
|
|
|
|
|
|
|
L2 |
|
|
Z7 |
|
Z8 |
|
Z9 |
Z10 |
RF |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
RF |
Z1 |
|
Z2 |
Z3 |
Z4 |
Z5 |
Z6 |
|
|
|
C13 |
|
|
OUTPUT |
|
|
|
|
|
|
|
|
C12 |
|
|
|
C16 |
||
INPUT |
|
|
|
|
|
|
|
|
|
|
|
L4 |
||
|
|
|
|
C6 |
|
|
DUT |
|
|
|
|
|
||
|
C2 |
|
C4 |
|
|
C7 |
|
|
|
|
|
|
||
|
L1 |
|
|
|
|
|
|
|
|
|
|
B1, B2, B3, |
Ferrite Bead, Ferroxcube, 56±590±65±3B |
R1, R2, R3, |
12 W, 0.2 W Chip Resistor, Rohm |
B4, B5, B6 |
|
R4, R5, R6 |
|
C1, C17 |
470 mF, Electrolytic Capacitor, Mallory |
Z1 |
0.155″ x 0.08″ Microstrip |
C2, C4, C12 |
0.6±4.5 pF, Variable Capacitor, Johanson |
Z2 |
0.280″ x 0.08″ Microstrip |
C3, C15 |
0.1 mF, Chip Capacitor, Kemet |
Z3 |
0.855″ x 0.08″ Microstrip |
C5, C14 |
1000 pF, B Case Chip Capacitor, ATC |
Z4 |
0.483″ x 0.08″ Microstrip |
C6, C8, C10, C13 |
12 pF, B Case Chip Capacitor, ATC |
Z5 |
0.200″ x 0.330″ Microstrip |
C7 |
1.8 pF, B Case Chip Capacitor, ATC |
Z6 |
0.220″ x 0.330″ Microstrip |
C9, C11 |
100 pF, B Case Chip Capacitor, ATC |
Z7 |
0.490″ x 0.330″ Microstrip |
C16 |
0.4±2.5 pF, Variable Capacitor, Johanson |
Z8 |
0.510″ x 0.08″ Microstrip |
L1 |
Straight Wire, 21 AWG, 0.3″ |
Z9 |
0.990″ x 0.08″ Microstrip |
L2 |
8 Turns, 0.042″ ID, 24 AWG, Enamel |
Z10 |
0.295″ x 0.08″ Microstrip |
L3 |
9 Turns, 0.046″ ID, 26 AWG, Enamel |
Board |
35 Mils Glass Teflon , Arlon GX±300, |
L4 |
3 Turns, 0.048″ ID, 25 AWG, Enamel |
|
er = 2.55 |
|
|
Input/Output Connectors Type N Flange Mount |
|
Figure 1. Schematic of 1.93 ± 2.0 GHz Broadband Test Circuit
MOTOROLA RF DEVICE DATA |
MRF282S MRF282Z |
|
3 |
|
|
|
R1 |
|
R2 |
|
R3 |
|
|
|
|
R4 |
R5 |
R6 |
DC |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
SUPPLY |
+ |
+ |
|
|
|
|
|
|
|
|
|
|
|
|
+ |
|
VGG |
|
B1 |
C4 |
B2 |
C7 |
B3 |
C5 |
C8 |
|
|
B5 |
B4 |
B6 + |
VDD |
|
|
C1 |
C14 |
C11 |
||||||||||||
(BIAS) |
|
|
|
|
|
|
|
|
|
C10 |
C13 |
C16 |
|
||
± |
|
|
|
|
|
|
|
|
|
|
|
|
|
± |
|
|
|
L1 |
|
L2 |
|
|
|
L3 |
|
|
|
L4 |
L5 |
|
|
|
|
|
|
|
|
|
DUT |
Z8 |
Z9 |
Z10 |
Z11 |
|
|||
|
|
|
|
|
|
Z6 |
|
RF |
|||||||
RF |
Z1 |
Z2 |
|
Z3 |
Z4 |
C6 |
Z5 |
Z7 |
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
OUTPUT |
|
INPUT |
|
|
|
|
|
|
|
|
|
|
C12 |
C15 |
|
|
C17 |
|
|
C2 |
|
|
C3 |
|
|
|
C9 |
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
B1, B2, B3, |
Ferrite Bead, Fair Rite, (2743021446) |
|
|
|
R1, R2, R3, |
12 W, 1/8 W Fixed Film Chip Resistor, |
|||||||||
B4, B5, B6 |
|
|
|
|
|
|
|
|
|
|
R4, R5, R6 |
0.08″ x 0.13″ |
|
|
|
C1, C16 |
|
470 mF, 63 V, Electrolytic Capacitor, Mallory |
|
|
W1, W2 |
Berrylium Copper, 0.010″ x 0.110″ |
x 0.210″ |
||||||||
C2, C9, C12 |
0.6±4.5 pF, Variable Capacitor, Johanson Gigatrim |
|
Z1 |
0.122″ x 0.08″ Microstrip |
|
||||||||||
C3 |
|
0.8±4.5 pF, Variable Capacitor, Johanson Gigatrim |
|
Z2 |
0.650″ x 0.08″ Microstrip |
|
|||||||||
C4, C13 |
|
0.1 mF, Chip Capacitor |
|
|
|
|
|
Z3 |
0.160″ x 0.08″ Microstrip |
|
|||||
C5, C14 |
|
100 pF, B Case Chip Capacitor, ATC |
|
|
|
Z4 |
0.030″ x 0.08″ Microstrip |
|
|||||||
C6, C8, C11, C15 12 pF, B Case Chip Capacitor, ATC |
|
|
|
Z5 |
0.045″ x 0.08″ Microstrip |
|
|||||||||
C7, C10 |
|
1000 pF, B Case Chip Capacitor, ATC |
|
|
Z6 |
0.291″ x 0.08″ Microstrip |
|
||||||||
C17 |
|
0.1 pF, B Case Chip Capacitor, ATC |
|
|
|
Z7 |
0.483″ x 0.330″ Microstrip |
|
|||||||
L1 |
|
3 Turns, 27 AWG, 0.087″ OD, 0.050″ |
ID, |
|
|
Z8 |
0.414″ x 0.330″ Microstrip |
|
|||||||
|
|
0.053″ |
Long, 6.0 nH |
|
|
|
|
|
Z9 |
0.392″ x 0.08″ Microstrip |
|
||||
L2 |
|
5 Turns, 27 AWG, 0.087″ OD, 0.050″ |
ID, |
|
|
Z10 |
0.070″ x 0.08″ Microstrip |
|
|||||||
|
|
0.091″ |
Long, 15 nH |
|
|
|
|
|
Z11 |
1.110″ x 0.08″ Microstrip |
|
||||
L3, L4 |
|
9 Turns, 26 AWG, 0.080″ OD, 0.046″ |
ID, |
|
|
Board |
1 = 0.03 Glass Teflon |
, Arlon GX±0300±55±22, |
|||||||
|
|
0.170″ |
Long, 30.8 nH |
|
|
|
|
|
|
2 oz Copper, 3 x 5″ Dimenson, 0.030″ , er = 2.55 |
|||||
L5 |
|
4 Turns, 27 AWG, 0.087″ OD, 0.050″ |
ID, |
|
|
|
|
|
|
|
|||||
|
|
0.078″ |
Long, 10 nH |
|
|
|
|
|
|
|
|
|
|
||
Figure 2. Schematic of 1.81 ± 1.88 GHz Broadband Test Circuit
MRF282S MRF282Z |
MOTOROLA RF DEVICE DATA |
4 |
|
VGG |
|
+ |
R1 |
R5 |
C1 |
|
||
R2 |
Q1 |
VDD |
|
R3 |
Q2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
R4 |
|
|
|
B1 |
|
|
|
B2 |
|
B3 |
|
|
|
|
R6 |
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
+ |
|
|
|
C13 |
|
|
|
|
|
VDD |
|
R7 |
|
|
|
|
|
|
|
|
|
|
|
+ |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
C2 |
C4 |
C5 |
C6 |
R8 |
C8 |
C9 |
C14 |
R9 |
C16 |
R10 |
C18 |
C20 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
L2 |
|
|
|
|
|
|
|
|
|
L1 |
|
|
DUT |
Z5 |
Z6 |
Z7 |
Z8 |
|
Z9 |
|
|
|
|
|
|
|
|
|
RF |
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
RF |
Z1 |
|
Z2 |
|
Z3 |
Z4 |
|
|
|
C17 |
|
|
OUTPUT |
|
|
|
|
|
|
|
|
C15 |
|
|
C19 |
|
||
|
INPUT |
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
C7 |
|
|
C11 |
C12 |
|
|
|
|
|||
|
|
C3 |
|
|
C10 |
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
B1, B2, B3, |
Ferrite Bead, Ferroxcube, 56±590±65±3B |
R2 |
1.0 kW, 1/2 W Potentiometer |
C1, C20 |
470 mF, 63 V, Electrolytic Capacitor, Mallory |
R3 |
13 kW, Axial, 1/4 W Resistor |
C2 |
0.01 mF, B Case Chip Capacitor, ATC |
R4, R6, R7 |
390 W, 1/8 W Chip Resistor, Rohm |
C3, C10, C15 |
0.6±4.5 pF, Variable Capacitor, Johanson |
R5 |
1.0 W, 10 W 1% Resistor, DALE |
C4, C16 |
0.02 mF, B Case Chip Capacitor, ATC |
R8, R9, R10 |
12 W, 1/8 W Chip Resistor, Rohm |
C5 |
100 mF, 50 V, Electrolytic Capacitor, Sprague |
Z1 |
0.624″ x 0.08″ Microstrip |
C6, C7, C9, |
12 pF, B Case Chip Capacitor, ATC |
Z2 |
0.725″ x 0.08″ Microstrip |
C14, C17 |
|
Z3 |
0.455″ x 0.08″ Microstrip |
C8, C13 |
51 pF, B Case Chip Capacitor, ATC |
Z4 |
0.530″ x 0.330″ Microstrip |
C11, C12 |
0.3 pF, B Case Chip Capacitor, ATC |
Z5 |
0.280″ x 0.330″ Microstrip |
C18 |
0.1 mF, Chip Capacitor, Kemet |
Z6 |
0.212″ x 0.330″ Microstrip |
C19 |
0.4±2.5 pF, Variable Capacitor, Johanson |
Z7 |
0.408″ x 0.08″ Microstrip |
L1 |
8 Turns, 0.042″ ID, 24 AWG, Enamel |
Z8 |
0.990″ x 0.08″ Microstrip |
L2 |
9 Turns, 0.046″ ID, 26 AWG, Enamel |
Z9 |
0.295″ x 0.08″ Microstrip |
Q1 |
NPN, 15 W, Bipolar Transistor, MJD310 |
Board |
35 Mils Glass Teflon , Arlon GX±0300, er = 2.55 |
Q2 |
PNP, 15 W, Bipolar Transistor, MJD320 |
Input/Output |
Type N Flange Mount RF55±22, Connectors, |
R1 |
200 W, Axial, 1/4 W Resistor |
|
Omni Spectra |
Figure 3. Schematic of Class A Test Circuit
MOTOROLA RF DEVICE DATA |
MRF282S MRF282Z |
|
5 |
Pout , OUTPUT POWER (WATTS)
|
|
|
TYPICAL CHARACTERISTICS |
|
|
|
|
|
|||||
16 |
|
|
|
14 |
|
14 |
|
|
|
|
|
|
|
14 |
|
|
|
|
(WATTS)POWER |
|
0.8 W |
|
|
|
|
|
|
|
|
|
Gps |
(dB)GAIN, |
12 |
|
|
|
|
|
|||
12 |
|
|
Pout |
13 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
10 |
|
|
|
|
|
10 |
|
0.5 W |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
8 |
|
|
|
12 |
OUTPUT |
|
|
|
|
|
|
|
|
|
|
|
|
G |
8 |
|
|
|
|
|
|
|
|
6 |
|
|
|
ps |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
4 |
|
|
|
11 |
, |
|
Pin = 0.2 W |
|
|
|
|
|
|
|
|
VDD = 26 Vdc |
|
|
out |
6 |
|
|
V |
DD |
= 26 Vdc |
|
|
2 |
|
IDQ = 75 mA |
|
|
P |
|
|
|
I |
|
|
||
|
|
|
|
|
|
|
|
= 75 mA |
|
||||
|
|
f = 2000 MHz Single Tone |
|
|
|
|
|
|
DQ |
|
|
|
|
0 |
|
|
10 |
|
4 |
|
|
Single Tone |
|
||||
|
|
|
|
|
|
|
|
|
|
|
|||
0.0 |
0.25 |
0.5 |
0.75 |
1.0 |
|
1800 |
1850 |
1900 |
|
|
1950 |
2000 |
|
Pin, INPUT POWER (WATTS)
Figure 4. Output Power & Power Gain
versus Input Power
(dBc) |
± 10 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
VDD = |
|
26 Vdc |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
DISTORTION |
± 20 |
|
IDQ = 75 mA |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||||
|
f |
= 2000.0 MHz |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
1 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
± 30 |
|
f2 = 2000.1 MHz |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||||||
INTERMODULATION |
± 40 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
3rd Order |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
± 50 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||||||
|
|
5th Order |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
± 60 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||||||
IMD, |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
7th Order |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||||||
|
± 70 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1.0 |
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||||||||
|
0.1 |
|
|
|
|
|
|
|
|
|
10 |
|||||||||||||||||||
|
|
|
|
|
|
Pout, OUTPUT POWER (WATTS) PEP |
|
|
|
|
|
|||||||||||||||||||
|
|
|
|
Figure 6. Intermodulation Distortion |
||||||||||||||||||||||||||
|
|
|
|
|
|
|
versus Output Power |
|
|
|
|
|
||||||||||||||||||
(dBc) |
± 10 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
VDD = |
26 Vdc |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
DISTORTION |
± 30 |
|
f1 = 2000.0 MHz |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
25 mA |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
INTERMODULATIONIMD, |
± 20 |
|
f2 |
= 2000.1 MHz |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
50 mA |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
± 40 |
|
100 mA |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
IDQ = 125 mA |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
± 50 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
75 mA |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
|
± 60 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1.0 |
|
|
|
|
|
|
|
|
10 |
||||||||||||||||||
|
0.1 |
|
|
|
|
|
|
|
|
|||||||||||||||||||||
Pout, OUTPUT POWER (WATTS) PEP
Figure 8. Intermodulation Distortion
versus Output Power
f, FREQUENCY (MHz)
Figure 5. Output Power versus Frequency
|
13 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
±15 |
(dBc) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Gps |
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
(dB) |
11 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
±25 |
DISTORTION |
|
G |
12 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
±20 |
INTERMODULATION |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
9 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
±35 |
||
|
IDQ = 75 |
mA |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||||
GAIN , |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
ps |
10 |
|
Pout = 10 |
W (PEP) |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
IMD |
|
±30 |
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
IMD, |
|
|
|
f1 = 2000.0 MHz |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||||
|
8 |
|
f2 = 2000.1 MHz |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
±40 |
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
18 |
|
|
20 |
22 |
24 |
26 |
|
|
|
|||||||||||||||
|
16 |
|
|
|
28 |
|
||||||||||||||||||||
|
|
|
|
|
|
VDD, DRAIN SUPPLY VOLTAGE (Vdc) |
|
|
|
|||||||||||||||||
|
|
|
Figure 7. Power Gain and Intermodulation |
|
|
|
||||||||||||||||||||
|
|
|
|
Distortion versus Supply Voltage |
|
|
|
|||||||||||||||||||
|
14 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
IDQ = 125 mA |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
13 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
GAIN (dB) |
|
100 mA |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
12 |
|
75 mA |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||
POWER, |
11 |
|
50 mA |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
ps |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
G |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
10 |
|
25 mA |
|
|
|
|
|
|
|
|
|
|
|
|
VDD |
= |
26 |
Vdc |
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
f1 = |
2000.0 |
|
MHz |
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
f2 = |
2000.1 |
|
MHz |
|
|
|
||
|
9 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0.1 |
|
|
|
|
|
|
1.0 |
|
|
|
|
10 |
|
|
|
||||||||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||||||||||||
Pout, OUTPUT POWER (WATTS) PEP
Figure 9. Power Gain versus Output Power
MRF282S MRF282Z |
MOTOROLA RF DEVICE DATA |
6 |
|
|
2 |
|
|
|
|
|
|
|
|
100 |
|
|
|
|
|
|
|
CURRENTDRAIN(Adc) |
1.5 |
|
|
|
|
Tflange = 75°C |
|
|
|
|
|
Ciss |
|
|
|
|
|
|
|
|
|
|
|
|
CAPACITANCE(pF) |
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
10 |
|
|
Coss |
|
|
|
|
||
|
|
|
|
Tflange = 100°C |
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
1 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
D |
.5 |
|
|
|
|
|
|
|
C, |
1.0 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
, |
|
|
|
|
|
|
|
|
|
|
|
|
Crss |
|
|
|
|
I |
|
|
TJ = 175°C |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
0 |
|
|
|
|
|
|
|
|
0.1 |
|
|
|
|
|
|
|
|
0 |
4 |
8 |
12 |
16 |
20 |
24 |
28 |
|
0 |
4 |
8 |
12 |
16 |
20 |
24 |
28 |
|
|
|
VDD, DRAIN SUPPLY VOLTAGE (Vdc) |
|
|
|
|
|
VDS, DRAIN SOURCE VOLTAGE (VOLTS) |
|
|
||||||
Figure 10. Class A DC Safe Operating Area |
Figure 11. Capacitance versus |
Drain Source Voltage
|
60 |
|
|
|
14 |
Pout = 10 W (PEP) |
39 |
(%) |
|
50 |
|
|
|
|
Gps |
EFFICIENCYCOLLECTOR |
|
(dBm)POWEROUTPUT |
|
TOI POINT |
G |
|
VDD = 26 Vdc |
|||
|
|
|
||||||
|
40 |
FUNDAMENTAL |
|
|
13 |
IDQ = 75 mA |
38 |
|
|
|
|
|
|
|
|||
|
30 |
|
|
|
|
|
||
|
|
|
(dB) |
|
|
|
|
|
|
20 |
|
|
|
|
|
|
|
|
10 |
3rd Order |
|
GAIN, |
12 |
|
37 |
|
|
|
|
|
|
|
|||
|
0 |
|
|
ps |
|
|
η |
|
, |
±10 |
|
VDD = 26 Vdc |
|
|
|
|
|
|
|
|
|
|
VSWR |
|||
P |
|
|
|
|
|
|
|
|
out |
± 20 |
|
ID = 600 mAdc |
|
11 |
|
36 |
|
|
± 30 |
|
f1 = 2000.0 MHz |
|
|
|
VSWR |
INPUT |
|
|
f2 = 2000.1 MHz |
|
|
|
|||
|
|
|
|
|
|
|||
|
|
|
|
|
35 |
|
||
|
± 40 |
|
|
|
10 |
|
|
10 |
20 |
30 |
|
40 |
1930 |
1940 |
1950 |
|
1960 |
1970 |
1980 |
1990 |
2000 |
||||
|
Pin, INPUT POWER (dBm) |
|
|
|
|
|
|
|
f, FREQUENCY MHz) |
|
|
|
|||||
Figure 12. Class A Third Order Intercept Point |
|
Figure 13. Performance in Broadband Circuit |
|
||||||||||||||
|
) |
1.E+09 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2 |
1.E+08 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
x AMPS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
1.E+07 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
(HOURS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
1.E+06 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
FACTOR |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1.E+05 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
MTBF |
1.E+04 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
1.E+03 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
50 |
100 |
150 |
200 |
|
250 |
|
|
|
||||||
|
|
0 |
|
|
|
|
|||||||||||
TJ, JUNCTION TEMPERATURE (°C)
1.6:1
1.4:1
1.2:1
|
This graph displays calculated MTBF in hours x ampere2 drain cur- |
|
ent. Life tests at elevated temperature have correlated to better than |
|
±10% of the theoretical prediction for metal failure. Divide MTBF |
|
factor by ID2 for MTBF in a particular application. |
|
Figure 14. MTBF Factor versus |
|
Junction Temperature |
|
|
MOTOROLA RF DEVICE DATA |
MRF282S MRF282Z |
|
7 |
|
|
|
|
+ j1 |
|
|
|
|
+ j0.5 |
|
|
|
|
|
+ j2 |
|
|
|
|
|
|
|
+ j3 |
|
+ j0.2 |
Zin |
|
Zo = 5 |
Ω |
|
+ j5 |
|
2 GHz |
|
|
|
|||
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
ZOL* |
|
|
|
+ j10 |
|
|
f = 1.8 GHz |
|
|
|
|
|
|
|
2 GHz |
|
|
|
|
|
|
|
|
|
|
|
|
|
0.0 |
0.2 |
0.5 |
1 |
|
2 |
3 |
5 |
|
|
|
1.8 GHz
|
|
± j10 |
± j0.2 |
|
± j5 |
|
|
|
|
|
± j3 |
|
± j0.5 |
± j2 |
|
|
|
|
|
± j1 |
VCC = 26 V, ICQ = 75 mA, Pout = 10 W (PEP)
f |
Zin(1) |
ZOL* |
|
MHz |
Ω |
Ω |
|
|
|
|
|
1800 |
2.1 |
+ j1.0 |
3.8 ± j0.15 |
|
|
|
|
1860 |
2.05 |
+ j1.15 |
3.77 ± j0.13 |
|
|
|
|
1900 |
2.0 |
+ j1.2 |
3.75 ± j0.1 |
|
|
|
|
1960 |
1.9 |
+ j1.4 |
3.65 + j0.1 |
|
|
|
|
2000 |
1.85 + j1.6 |
3.55 + j0.2 |
|
|
|
|
|
Zin(1)= Conjugate of fixture gate terminal impedance.
ZOL* = Conjugate of the optimum load impedance at given output power, voltage, IMD, bias current and frequency.
Figure 15. Series Equivalent Input and Output Impedence
MRF282S MRF282Z |
MOTOROLA RF DEVICE DATA |
8 |
|
Table 1. Common Source S±Parameters at VDS = 24 Vdc, ID = 600 mAdc
f |
|
S11 |
S21 |
|
|
S12 |
|
S22 |
||||
GHz |
|S11| |
|
f |
|S21| |
|
f |
|S12| |
|
f |
|S22| |
|
f |
|
|
|
|
|
||||||||
0.1 |
0.916 |
|
-81 |
33.41 |
|
128 |
0.016 |
|
41 |
0.498 |
|
-60 |
|
|
|
|
|
|
|
|
|
|
|
|
|
0.2 |
0.850 |
|
-118 |
20.81 |
|
101 |
0.020 |
|
16 |
0.499 |
|
-88 |
|
|
|
|
|
|
|
|
|
|
|
|
|
0.3 |
0.843 |
|
-135 |
14.45 |
|
84 |
0.020 |
|
2 |
0.532 |
|
-106 |
|
|
|
|
|
|
|
|
|
|
|
|
|
0.4 |
0.848 |
|
-144 |
10.61 |
|
73 |
0.019 |
|
-7 |
0.552 |
|
-117 |
|
|
|
|
|
|
|
|
|
|
|
|
|
0.5 |
0.861 |
|
-151 |
8.34 |
|
63 |
0.017 |
|
-15 |
0.609 |
|
-125 |
|
|
|
|
|
|
|
|
|
|
|
|
|
0.6 |
0.872 |
|
-154 |
6.61 |
|
55 |
0.015 |
|
-19 |
0.647 |
|
-132 |
|
|
|
|
|
|
|
|
|
|
|
|
|
0.7 |
0.882 |
|
-158 |
5.43 |
|
47 |
0.013 |
|
-23 |
0.675 |
|
-139 |
|
|
|
|
|
|
|
|
|
|
|
|
|
0.8 |
0.895 |
|
-160 |
4.54 |
|
41 |
0.011 |
|
-24 |
0.728 |
|
-145 |
|
|
|
|
|
|
|
|
|
|
|
|
|
0.9 |
0.901 |
|
-163 |
3.82 |
|
34 |
0.009 |
|
-24 |
0.740 |
|
-150 |
|
|
|
|
|
|
|
|
|
|
|
|
|
1.0 |
0.902 |
|
-164 |
3.27 |
|
29 |
0.008 |
|
-18 |
0.773 |
|
-160 |
|
|
|
|
|
|
|
|
|
|
|
|
|
1.1 |
0.909 |
|
-166 |
2.83 |
|
24 |
0.006 |
|
-6 |
0.794 |
|
-164 |
|
|
|
|
|
|
|
|
|
|
|
|
|
1.2 |
0.917 |
|
-168 |
2.48 |
|
19 |
0.006 |
|
10 |
0.813 |
|
-168 |
|
|
|
|
|
|
|
|
|
|
|
|
|
1.3 |
0.923 |
|
-169 |
2.18 |
|
14 |
0.006 |
|
14 |
0.826 |
|
-172 |
|
|
|
|
|
|
|
|
|
|
|
|
|
1.4 |
0.931 |
|
-171 |
1.94 |
|
10 |
0.006 |
|
15 |
0.842 |
|
-176 |
|
|
|
|
|
|
|
|
|
|
|
|
|
1.5 |
0.933 |
|
-172 |
1.73 |
|
6 |
0.005 |
|
43 |
0.853 |
|
-179 |
|
|
|
|
|
|
|
|
|
|
|
|
|
1.6 |
0.934 |
|
-174 |
1.55 |
|
2 |
0.007 |
|
60 |
0.859 |
|
177 |
|
|
|
|
|
|
|
|
|
|
|
|
|
1.7 |
0.937 |
|
-175 |
1.40 |
|
-1 |
0.009 |
|
60 |
0.869 |
|
174 |
|
|
|
|
|
|
|
|
|
|
|
|
|
1.8 |
0.938 |
|
-176 |
1.27 |
|
-4 |
0.010 |
|
63 |
0.869 |
|
171 |
|
|
|
|
|
|
|
|
|
|
|
|
|
1.9 |
0.942 |
|
-177 |
1.16 |
|
-7 |
0.011 |
|
71 |
0.874 |
|
169 |
|
|
|
|
|
|
|
|
|
|
|
|
|
2.0 |
0.943 |
|
-178 |
1.06 |
|
-10 |
0.014 |
|
73 |
0.876 |
|
166 |
|
|
|
|
|
|
|
|
|
|
|
|
|
2.1 |
0.946 |
|
-178 |
0.98 |
|
-12 |
0.016 |
|
71 |
0.884 |
|
163 |
|
|
|
|
|
|
|
|
|
|
|
|
|
2.2 |
0.950 |
|
-179 |
0.92 |
|
-15 |
0.019 |
|
67 |
0.897 |
|
160 |
|
|
|
|
|
|
|
|
|
|
|
|
|
2.3 |
0.953 |
|
-180 |
0.86 |
|
-18 |
0.019 |
|
63 |
0.903 |
|
157 |
|
|
|
|
|
|
|
|
|
|
|
|
|
2.4 |
0.954 |
|
179 |
0.80 |
|
-21 |
0.020 |
|
62 |
0.907 |
|
154 |
|
|
|
|
|
|
|
|
|
|
|
|
|
2.5 |
0.955 |
|
178 |
0.76 |
|
-24 |
0.020 |
|
65 |
0.907 |
|
151 |
|
|
|
|
|
|
|
|
|
|
|
|
|
2.6 |
0.961 |
|
177 |
0.71 |
|
-26 |
0.024 |
|
69 |
0.912 |
|
149 |
MOTOROLA RF DEVICE DATA |
MRF282S MRF282Z |
|
9 |
PACKAGE DIMENSIONS
A
1
U 4 PL 
|
|
3 |
W 4 PL |
B |
P |
|
|
|
V 4 PL |
K 2 PL |
|
|
2 |
|
|
D 2 PL |
|
E |
|
|
|
C |
|
H |
J |
|
N |
|
|
|
|
|
|
|
CASE 458±03 |
|
|
ISSUE C |
|
|
(MRF282S) |
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.197 |
0.203 |
5.00 |
5.16 |
B |
0.157 |
0.163 |
3.99 |
4.14 |
C |
0.085 |
0.110 |
2.16 |
2.79 |
D |
0.047 |
0.053 |
1.19 |
1.35 |
E |
0.006 |
0.010 |
0.15 |
0.25 |
H |
0.025 |
0.031 |
0.64 |
0.79 |
J |
0.006 |
0.010 |
0.15 |
0.25 |
K |
0.060 |
0.100 |
1.52 |
2.54 |
N |
0.177 |
0.183 |
4.50 |
4.65 |
P |
0.137 |
0.143 |
3.48 |
3.63 |
U |
0.000 |
0.005 |
0.00 |
0.13 |
V |
0.030 |
0.040 |
0.76 |
1.02 |
W |
0.017 |
0.023 |
0.43 |
0.58 |
STYLE 1:
PIN 1. DRAIN
2.GATE
3.SOURCE
U 4 PL 
W 4 PL
J 
A
1 |
S |
|
Y |
|
3 |
B |
P |
V 4 PL |
K 2 PL |
2 |
|
|
D 2 PL |
E |
C |
|
H |
|
N |
CASE 458A±01
ISSUE O (MRF282Z)
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.DIMENSION ±H± (PACKAGE COPLANARITY): THE BOTTOM OF THE LEADS AND REFERENCE PLANE ±T± MUST BE COPLANAR WITHIN DIMENSION ±H±.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.197 |
0.203 |
5.00 |
5.16 |
B |
0.157 |
0.163 |
3.99 |
4.14 |
C |
0.085 |
0.110 |
2.16 |
2.79 |
D |
0.047 |
0.053 |
1.19 |
1.35 |
E |
0.006 |
0.010 |
0.15 |
0.25 |
H |
0.000 |
0.004 |
0.00 |
0.10 |
J |
0.006 |
0.010 |
0.15 |
0.25 |
K |
0.050 |
0.080 |
1.27 |
2.03 |
N |
0.177 |
0.183 |
4.50 |
4.65 |
P |
0.137 |
0.143 |
3.48 |
3.63 |
S |
0.020 |
0.040 |
0.51 |
1.02 |
U |
0.000 |
0.005 |
0.00 |
0.13 |
V |
0.030 |
0.040 |
0.76 |
1.02 |
W |
0.017 |
0.023 |
0.43 |
0.58 |
Y |
0.030 |
0.040 |
0.76 |
1.02 |
STYLE 1:
PIN 1. DRAIN
2.GATE
3.SOURCE
MRF282S MRF282Z |
MOTOROLA RF DEVICE DATA |
10 |
|