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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6439/D

The RF Line

NPN Silicon

RF Power Transistor

. . . designed primarily for wideband large±signal output amplifier stages in the 225 to 400 MHz frequency range.

•Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band

Minimum Gain = 7.8 dB @ 400 MHz

•Built±In Matching Network for Broadband Operation Using Double

Match Technique

•100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

•Gold Metallization System for High Reliability Applications

MAXIMUM RATINGS*

2N6439

60 W, 225 to 400 MHz CONTROLLED ªQº BROADBAND RF POWER TRANSISTOR

NPN SILICON

CASE 316±01, STYLE 1

Rating	Symbol	Value	Unit

Collector±Emitter Voltage	VCEO	33	Vdc
Collector±Base Voltage	VCBO	60	Vdc
Emitter±Base Voltage	VEBO	4.0	Vdc
Total Device Dissipation @ TC = 25°C (1)	PD	146	Watts
Derate above 25°C		0.83	W/°C

Storage Temperature Range	Tstg	± 65 to +200	°C
THERMAL CHARACTERISTICS

Characteristic		Symbol		Max		Unit

Thermal Resistance, Junction to Case		RθJC	1.2			°C/W
ELECTRICAL CHARACTERISTICS* (TC = 25°C unless otherwise noted.)
Characteristic	Symbol	Min		Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Breakdown Voltage	V(BR)CEO	33		Ð	Ð	Vdc
(IC = 50 mAdc, IB = 0)
Collector±Emitter Breakdown Voltage	V(BR)CES	60		Ð	Ð	Vdc
(IC = 50 mAdc, VBE = 0)
Emitter±Base Breakdown Voltage	V(BR)EBO	4.0		Ð	Ð	Vdc
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current	ICBO	Ð		Ð	2.0	mAdc
(VCB = 30 Vdc, IE = 0)
NOTE:						(continued)

1.These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers.

*Indicates JEDEC Registered Data.

Motorola, Inc. 1994

ELECTRICAL CHARACTERISTICS* Ð continued (TC = 25°C unless otherwise noted.)

Characteristic	Symbol	Min	Typ	Max	Unit

ON CHARACTERISTICS

DC Current Gain

hFE

100

(IC = 1.0 Adc, VCE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)

BROADBAND FUNCTIONAL TESTS (Figure 6)

Common±Emitter Amplifier Power Gain

GPE

7.8

8.5

(VCC = 28 Vdc, Pout = 60 W, f = 225± 400 MHz)

Electrical Ruggedness

(Pout = 60 W, VCC = 28 Vdc, f = 400 MHz, VSWR 30:1

No Degradation in Output Power

all phase angles)

NARROW BAND FUNCTIONAL TESTS (Figure 1)

Common±Emitter Amplifier Power Gain

GPE

7.8

(VCC = 28 Vdc, Pout = 60 W, f = 400 MHz)

Collector Efficiency

(VCC = 28 Vdc, Pout = 60 W, f = 400 MHz)

* Indicates JEDEC Registered Data.

DUT

C11

C10

C1 toC4, C11 Ð 4.0 ±40 pF

C5 toC8 Ð 33 pF

VCC = 28 V

C9 Ð 1000 pF

C10 Ð 5.0 mF

R1 Ð 15 W

L1, L2 Ð 3/16 ″ x 1″ Copper Strap

L3 Ð 1.5 mH

L4 Ð 10 mH

L5 Ð 1 Turn #16 AWG, 5/16 ″ I.D.

Figure 1. 400 MHz Test Amplifier (Narrow Band)

2N6439	MOTOROLA RF DEVICE DATA
2

NARROW BAND DATA

Pout, OUTPUT POWER (WATTS)

100	VCC = 28 V					120	VCC = 28 V
	VCC = 28 V						VCC = 28 V
80					(WATTS)	100								f = 225 MHz
				Pin = 8 W	(WATTS)									400 MHz


60				6 W	POWER	80
					POWER
					OUTPUT,
40				4 W	OUTPUT,	60
				4 W

20					out	40
20				2 W	P	40
				2 W
0	250	300	350	400	450	20	2	4	6	8	10	12	14	16	18	20
200	250	300	350	400	450	0	2	4	6	8	10	12	14	16	18	20
		f, FREQUENCY (MHz)							Pin, INPUT POWER (WATTS)

Figure 2. Pout versus Frequency

Figure 3. Output Power versus Input Power

POWER GAIN (dB)

GPE , COMMON-EMITTER AMPLIFIER

12						100
	Pout = 60 W						f = 400 MHz
	VCC = 28 V				(WATTS)	80					Pin = 6 W
11					(WATTS)						Pin = 6 W

					POWER
					POWER	60
						60
10					OUTPUT,						4 W
						40					4 W


9					out	20
					out
					P
8	250	300	350	400	450	0	14	18	22	26	30
200	250	300	350	400	450	10	14	18	22	26	30
		f, FREQUENCY (MHz)						VCC, SUPPLY VOLTAGE (VOLTS)

Figure 4. Power Gain versus Frequency

Figure 5. Output Power versus Supply Voltage

	100
(WATTS)		f = 225 MHz
	80
						Pin = 8 W
POWER	60
POWER						4 W
, OUTPUT	40
, OUTPUT
out	20
P	20
	0	14	18	22	26	30
	10	14	18	22	26	30
			VCC, SUPPLY VOLTAGE (VOLTS)

Figure 6. Output Power versus Supply Voltage

MOTOROLA RF DEVICE DATA	2N6439
	3

									R1
				B			C13			C15	VCC
								+	RFC1		VCC
								+	C14		C16
								±	C14		C16
				L1	L2			±
				L1	L2
						A			C12	T2
					DUT	A	L5			T2	50 W LINE
					DUT		L5				50 W LINE
50 W LINE	T1	C1	L4					0.5″
	T1

			0.8″			C8			C11		4:1
						C8	C9	C10	C11		4:1
4:1		C2	C3	C5	C7		C9	C10
			C3	C5
			C4	C6
			C4	C6
		A	L3	R2
			L3		C17
					C17


C1 Ð 68 pF	RFC1 Ð Ferrite Bead Choke, Feroxcube VK200 19/4B
C2, C4, C8, C10 Ð 27 pF	B Ð Ferroxcube 56-590-65/4B Ferrite Bead
C3, C5, C11 Ð 10 pF	T1, T2 Ð 25 Ohms (UT25) Miniature Coaxial Cable, 1 turn
C6, C7 Ð 51 pF	R1 Ð 11			W, 1.0 W
C9 Ð 1.0 ±10 pF JOHANSON	R2 Ð 20			W, 1/4 W
C12 Ð 100 pF	L1	Ð 10 Turns, #22 AWG, 1/8 ″ I.D.
C13, C15 Ð 680 pF	L2	Ð 4	Turns, #16 AWG, 1/4 ″ I.D.
C14, C16 Ð 1.0 mF, 35 V Tantalum	L3	Ð 6	Turns, #24 AWG, 1/8 ″ I.D.
C17 Ð 0.1 mF, ERIE Red Cap	L4, L5		Ð 1 ″ x 0.25″ Microstrip Line
	Board Material 0.031″ Thick Teflon-Fiberglass

Figure 7. 225 to 400 MHz Broadband Test Circuit Schematic

BROADBAND DATA (Circuit, Figure 7)

	10
GAIN (dB)	8
GAIN (dB)	6	Pout = 60 W
POWER	4	VCC = 28 V
		VCC = 28 V
,
PE
G	2
	2
	0	200	250	300	350	400
		200	250	300	350	400

f, FREQUENCY (MHz)

Figure 8. Power Gain versus Frequency

	100
	100	Pout = 60 W
		Pout = 60 W
	80	VCC = 28 V
	80
(%)
(%)
EFFICIENCY	60
	60
	40

200

250

300

350

400

f, FREQUENCY (MHz)

Figure 9. Efficiency versus Frequency

2N6439	MOTOROLA RF DEVICE DATA
4

	6
		Pout = 60 W
	5	VCC = 28 V
VSWR	4
	4
INPUT	3
	3
	2
	1	200	250	300	350	400
		200	250	300	350	400

f, FREQUENCY (MHz)

Figure 10. Input VSWR versus Frequency

			450
		400		f = 225 MHz
	ZOL*	450			0.1	Zin
	ZOL*				275
	0.2				Pout = 60 W, VCC = 28 V
	f = 225 MHz				Pout = 60 W, VCC = 28 V
.3	f = 225 MHz	275	350	400	350
.3		275	350	400
			FREQUENCY			Zin	ZOL*
ZOL* = Conjugate of the optimum load				MHz		OHMS	OHMS
ZOL* = Conjugate of the optimum load				225		0.7 + j1.6	2.2 ± j1.8
ZOL* = impedance into which the device				225		0.7 + j1.6	2.2 ± j1.8
ZOL* = impedance into which the device				275		0.9 + j2.2	2.1 ± j0.9
ZOL* = output operates at a given output				275		0.9 + j2.2	2.1 ± j0.9
ZOL* = output operates at a given output				350		2.2 + j2.1	2.1 ± j0.1
ZOL* = power, voltage and frequency.				350		2.2 + j2.1	2.1 ± j0.1
ZOL* = power, voltage and frequency.				400		1.2 + j0.6	2.0 + j0.2
				400		1.2 + j0.6	2.0 + j0.2
				450		0.5 + j1.6	1.9 + j0.9

Figure 11. Series Equivalent Input-Output Impedance

MOTOROLA RF DEVICE DATA	2N6439
	5

PACKAGE DIMENSIONS

D	F
D
	4
R	K
3	K

		1
Q	2
	2
	L
	B	C
	J	C
E	J
E
		N
	H
	A	U

CASE 316±01

ISSUE D

NOTES:

1. FLANGE IS ISOLATED IN ALL STYLES.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	24.38	25.14	0.960	0.990
B	12.45	12.95	0.490	0.510
C	5.97	7.62	0.235	0.300
D	5.33	5.58	0.210	0.220
E	2.16	3.04	0.085	0.120
F	5.08	5.33	0.200	0.210
H	18.29	18.54	0.720	0.730
J	0.10	0.15	0.004	0.006
K	10.29	11.17	0.405	0.440
L	3.81	4.06	0.150	0.160
N	3.81	4.31	0.150	0.170
Q	2.92	3.30	0.115	0.130
R	3.05	3.30	0.120	0.130
U	11.94	12.57	0.470	0.495

STYLE 1:

PIN 1. EMITTER

2.COLLECTOR

3.EMITTER

4.BASE

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:

USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.

EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4±32±1, Nishi±Gotanda, Shinagawa±ku, Tokyo 141, Japan.

ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

◊	2N6439/D
	2N6439/D

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