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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF422/D

The RF Line

NPN Silicon

RF Power Transistor

Designed primarily for applications as a high±power linear amplifier from 2.0 to 30 MHz.

Specified 28 Volt, 30 MHz Characteristics Ð Output Power = 150 W (PEP)

Minimum Gain = 10 dB Efficiency = 40%

Intermodulation Distortion @ 150 W (PEP) Ð IMD = ±30 dB (Min)

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

MAXIMUM RATINGS

MRF422

150 W (PEP), 30 MHz

RF POWER

TRANSISTORS

NPN SILICON

CASE 211±11, STYLE 1

Rating

 

Symbol

 

Value

Unit

 

 

 

 

 

 

 

Collector±Emitter Voltage

 

VCEO

 

40

Vdc

Collector±Base Voltage

 

VCBO

 

85

Vdc

Emitter±Base Voltage

 

VEBO

 

3.0

Vdc

Collector Current Ð Continuous

 

IC

 

20

Adc

Withstanding Current Ð 10 s

 

Ð

 

30

Adc

 

 

 

 

 

 

 

Total Device Dissipation @ TC = 25°C

 

PD

 

290

Watts

Derate above 25°C

 

 

 

1.66

W/°C

 

 

 

 

 

 

Storage Temperature Range

 

Tstg

± 65 to +150

°C

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

Symbol

 

Max

Unit

 

 

 

 

 

 

 

Thermal Resistance, Junction to Case

 

RθJC

 

0.6

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

Min

Typ

 

Max

Unit

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0)

V(BR)CEO

35

Ð

 

Ð

Vdc

Collector±Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0)

V(BR)CES

85

Ð

 

Ð

Vdc

Collector±Base Breakdown Voltage (IC = 100 mAdc, IE = 0)

V(BR)CBO

85

Ð

 

Ð

Vdc

Emitter±Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

V(BR)EBO

3.0

Ð

 

Ð

Vdc

Collector Cutoff Current (VCE = 28 Vdc, VBE = 0, TC = 25°C)

ICES

Ð

Ð

 

20

mAdc

(continued)

REV 6

Motorola, Inc. 1994

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

ON CHARACTERISTICS

DC Current Gain

hFE

15

30

120

Ð

(IC = 5.0 Adc, VCE = 5.0 Vdc)

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Output Capacitance

Cob

Ð

420

Ð

pF

(VCB = 28 Vdc, IE = 0, f = 1.0 MHz)

 

 

 

 

 

FUNCTIONAL TESTS

 

 

 

 

 

 

 

 

 

 

 

Common±Emitter Amplifier Power Gain

GPE

10

13

Ð

dB

(VCC = 28 Vdc, Pout = 150 W (PEP), IC(max) = 6.7 Adc,

 

 

 

 

 

ICQ = 150 mAdc, f = 30, 30.001 MHz)

 

 

 

 

 

Collector Efficiency

h

Ð

45

Ð

%

(VCC = 28 Vdc, Pout = 150 W (PEP), IC(max) = 6.7 Adc,

 

 

 

 

 

ICQ = 150 mAdc, f = 30, 30.001 MHz)

 

 

 

 

 

Intermodulation Distortion (1)

IMD

Ð

± 33

± 30

dB

(VCE = 28 Vdc, Pout = 150 W (PEP), IC = 6.7 Adc,

 

 

 

 

 

ICQ = 150 mAdc, f = 30, 30.001 MHz)

 

 

 

 

 

Output Power

Pout

150

Ð

Ð

Watts

(VCE = 28 Vdc, f = 30 MHz)

 

 

 

 

(PEP)

NOTE:

1. To Mil±Std±1311 Version A, Test Method 2204, Two Tone, Reference each Tone.

 

R1

 

 

 

 

 

 

 

+

 

+

 

 

 

 

 

 

 

BIAS

CR1

C6

C7

 

 

 

L5

 

28 Vdc

 

C8

C9

C10

C11

 

±

 

 

L2

L3

 

 

 

 

 

 

L4

C4

C2

L1

D.U.T.

±

 

 

 

C1

R2

C3

C5

 

 

C1, C2, C3, C5 Ð 170± 680 pF, ARCO 469

L1

Ð 3 Turns, #16 Wire, 5/16 ″ I.D., 5/16″ Long

C4

Ð 80± 480 pF, ARCO 466

L2

Ð 10 mH Molded Choke

C6, C8, C11 Ð ERIE 0.1 mF, 100 V

L3

Ð 12 Turns, #16 Enameled Wire, Close Wound, 1/4 ″ Dia.

C7

Ð MALLORY 500 mF, 15 V Electrolytic

L4

Ð 5 Turns, 1/8 ″ Copper Tubing

C9

Ð UNDERWOOD 1000 pF, 350 V

L5 Ð 10 Ferrite Beads Ð FERROXCUBE #56±590±65/3B

C10 Ð 10 mF, 50 V Electrolytic

 

 

R1

Ð 10

W, 25 Watt Wire Wound

 

 

R2

Ð 10

W, 1.0 Watt Carbon

 

 

CR1 Ð 1N4997

Figure 1. 30 MHz Test Circuit Schematic

MRF422

MOTOROLA RF DEVICE DATA

2

 

 

280

 

 

 

 

 

 

 

25

 

 

 

 

 

 

 

 

PEP)

240

VCC = 28 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ICQ = 150 mA

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

POWER (WATTS

 

TWO TONE TEST:

 

 

 

 

POWERGAIN (dB)

 

 

 

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 30, 30.001 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

160

 

 

 

 

 

 

15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

120

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

OUTPUT,

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

80

 

 

 

 

 

 

PE

 

VCC = 28 V

 

 

 

 

 

 

 

 

 

 

 

 

 

G

5

ICQ = 150 mA

 

 

 

 

 

 

out

40

 

 

 

 

 

 

 

P = 150 W PEP

 

 

 

 

 

 

P

 

 

 

 

 

 

 

 

out

 

 

 

 

 

 

 

 

0

2

4

6

8

10

12

14

0

2

3

5

7

10

15

20

30

 

0

1.5

Pin, INPUT POWER (WATTS PEP)

f, FREQUENCY (MHz)

Figure 2. Output Power versus Input Power

Figure 3. Power Gain versus Frequency

Pout, OUTPUT POWER (WATTS PEP)

280

 

 

 

 

(dB)

±10

 

 

 

 

 

 

IMD = 30 dB

 

 

 

 

VCC = 28 V

 

 

 

 

240

 

 

 

DISTORTION

 

 

 

 

 

ICQ = 25 mA

 

 

 

 

ICQ = 150 mA

 

 

 

 

200

f = 30, 30.001 MHz

 

 

 

 

± 20

f = 30, 30.001 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

160

 

 

 

 

INTERMODULATION

 

 

 

 

 

 

 

 

 

 

 

± 30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

120

 

 

 

 

 

 

 

 

3RD ORDER

 

 

80

 

 

 

 

 

± 40

 

 

5TH ORDER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

40

 

 

 

 

IMD,

 

 

 

 

 

 

0

 

 

 

 

± 50

 

 

 

 

 

20

24

28

32

 

40

80

120

160

200

16

 

0

VCC, SUPPLY VOLTAGE (VOLTS)

Figure 4. Linear Output Power versus

Supply Voltage

 

40

 

 

 

 

 

 

 

 

 

 

 

 

 

(AMP)

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TC = 25°C

 

 

CURRENT

8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

COLLECTOR,

4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

0.8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

5

10

20

 

50

100

 

1

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Pout, OUTPUT POWER (WATTS PEP)

Figure 5. Intermodulation Distortion

versus Output Power

 

 

30

 

 

 

15

VCC = 28 V

 

ICQ

= 150 mA

 

 

7

 

Pout = 150 W PEP

 

FREQUENCY

Zin

 

 

 

 

MHz

 

Ohms

 

 

2

 

4.90 ± j1.54

 

 

7

 

2.10 ± j0.93

f = 2 MHz

 

15

 

1.32 ± j0.38

 

30

 

0.81 ± j0.26

 

 

 

Figure 6. DC Safe Operating Area

Figure 7. Series Input Impedance

MOTOROLA RF DEVICE DATA

MRF422

 

3

 

 

5

 

 

 

 

 

 

 

 

, PARALLEL EQUIVALENT OUTPUT

 

4

 

 

 

 

 

 

 

 

RESISTANCE (OHMS)

3

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

1

VCC = 28 V

 

 

 

 

 

 

out

 

 

ICQ = 150 mA

 

 

 

 

 

 

R

 

 

Pout = 150 W PEP

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

2

3

5

7

10

15

20

30

 

 

1.5

 

 

10

 

 

 

 

 

 

 

 

OUTPUT

 

8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, PARALLEL EQUIVALENT

CAPACITANCE (pF)

6

 

 

 

 

 

 

 

 

4

 

 

 

 

 

 

 

 

2

VCC = 28 V

 

 

 

 

 

 

out

 

 

ICQ = 150 mA

 

 

 

 

 

 

C

 

 

Pout = 150 W PEP

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

2

3

5

7

10

15

20

30

 

 

1.5

f, FREQUENCY (MHz)

f, FREQUENCY (MHz)

Figure 8. Output Resistance versus Frequency

Figure 9. Output Capacitance versus Frequency

PACKAGE DIMENSIONS

 

A

 

NOTES:

 

 

 

 

 

U

 

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

M

 

 

 

Y14.5M, 1982.

 

 

 

 

 

 

2. CONTROLLING DIMENSION: INCH.

1

M

 

 

INCHES

MILLIMETERS

Q

 

 

4

 

DIM

MIN

MAX

MIN

MAX

 

 

A

0.960

0.990

24.39

25.14

 

 

 

 

R

B

B

0.465

0.510

11.82

12.95

 

C

0.229

0.275

5.82

6.98

 

 

 

D

0.216

0.235

5.49

5.96

 

 

 

E

0.084

0.110

2.14

2.79

2

3

 

H

0.144

0.178

3.66

4.52

 

J

0.003

0.007

0.08

0.17

 

D

 

K

0.435

±±±

11.05

±±±

 

 

M

45

NOM

45

NOM

K

 

 

 

 

Q

0.115

0.130

2.93

3.30

 

 

 

R

0.246

0.255

6.25

6.47

J

 

 

U

0.720

0.730

18.29

18.54

 

 

 

 

 

 

 

 

C

 

STYLE 1:

 

H

 

PIN 1.

EMITTER

E

SEATING

2.

BASE

 

3.

EMITTER

 

 

PLANE

 

 

4.

COLLECTOR

 

 

 

CASE 211±11

ISSUE N

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

MRF422/D

 

*MRF422/D*

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