MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF429/D
The RF Line
NPN Silicon
RF Power Transistor
Designed primarily for high±voltage applications as a high±power linear amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
•Specified 50 Volt, 30 MHz Characteristics Ð Output Power = 150 W (PEP)
Minimum Gain = 13 dB Efficiency = 45%
•Intermodulation Distortion @ 150 W (PEP) Ð IMD = ±32 dB (Max)
•Diffused Emitter Resistors for Superior Ruggedness
•100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR @ 150 W CW
MAXIMUM RATINGS
MRF429
150 W (LINEAR), 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211±11, STYLE 1
Rating |
Symbol |
Value |
Unit |
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Collector±Emitter Voltage |
VCEO |
50 |
Vdc |
Collector±Base Voltage |
VCBO |
100 |
Vdc |
Emitter±Base Voltage |
VEBO |
4.0 |
Vdc |
Collector Current Ð Continuous |
IC |
16 |
Adc |
Withstand Current Ð 10 s |
Ð |
20 |
Adc |
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Total Device Dissipation @ TC = 25°C |
PD |
233 |
Watts |
Derate above 25°C |
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1.33 |
W/°C |
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Storage Temperature Range |
Tstg |
± 65 to +150 |
°C |
THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RθJC |
0.75 |
°C/W |
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS
Collector±Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) |
V(BR)CEO |
50 |
Ð |
Ð |
Vdc |
Collector±Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) |
V(BR)CES |
100 |
Ð |
Ð |
Vdc |
Collector±Base Breakdown Voltage (IC = 100 mAdc, IE = 0) |
V(BR)CBO |
100 |
Ð |
Ð |
Vdc |
Emitter±Base Breakdown Voltage (IE = 10 mAdc, IC = 0) |
V(BR)EBO |
4.0 |
Ð |
Ð |
Vdc |
(continued)
Motorola, Inc. 1994
ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted.)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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ON CHARACTERISTICS
DC Current Gain |
hFE |
10 |
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30 |
80 |
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Ð |
(IC = 5.0 Adc, VCE = 5.0 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Output Capacitance |
Cob |
Ð |
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220 |
300 |
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pF |
(VCB = 50 Vdc, IE = 0, f = 1.0 MHz) |
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FUNCTIONAL TESTS |
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Common±Emitter Amplifier Gain |
GPE |
13 |
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15 |
Ð |
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dB |
(VCC = 50 Vdc, Pout = 150 W (PEP), IC(max) = 3.32 Adc, |
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f = 30; 30.001 MHz) |
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Output Power |
Pout |
150 |
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Ð |
Ð |
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W (PEP) |
(VCE = 50 Vdc, f = 30; 30.001 MHz) |
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Collector Efficiency |
h |
45 |
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Ð |
Ð |
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% |
(VCC = 50 Vdc, Pout = 150 W (PEP), IC(max) = 3.32 Adc, |
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f = 30, 30.001 MHz) |
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Intermodulation Distortion (1) |
IMD |
Ð |
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± 35 |
± 32 |
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dB |
(VCE = 50 Vdc, Pout = 150 W (PEP), IC = 3.32 Adc) |
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Electrical Ruggedness |
y |
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(VCC = 50 Vdc, Pout = 150 W CW, f = 30 MHz, |
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No Degradation in Output Power |
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VSWR 30:1 at all Phase Angles) |
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NOTE: |
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1. To Mil±Std±1311 Version A, Test Method 2204, Two Tone, Reference each Tone.
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R1 |
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L5 |
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+ |
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+ |
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BIAS |
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+ |
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C3 |
C4 |
CR1 |
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C8 |
C9 |
C10 |
50 Vdc |
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± |
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± |
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L2 |
L3 |
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± |
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DUT |
L4 |
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RF |
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C2 |
L1 |
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RF |
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C6 |
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OUTPUT |
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INPUT |
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R3 |
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C1 |
R2 |
C5 |
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C7 |
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C1, C2, C7 |
Ð 170± 780 pF, Arco 469 |
R2 Ð 10 W, 1.0 Watt |
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C3, C8, C9 |
Ð 0.1 mF, 100 V Erie |
R3 Ð 5.0 ± 3.3 W 1/2 Watt Carbon Resistors in Parallel |
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C4 |
Ð 500 |
mF @ 6.0 V |
CR1 Ð 1N4997 |
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C5 |
Ð 9.0± 180 pF, Arco 463 |
L1 |
Ð |
3 Turns, #16 Wire, 5/16 ″ I.D., 5/16″ Long |
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C6 |
Ð 80± 480 pF, Arco 466 |
L2 |
Ð |
10 |
mH Molded Choke |
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C10 Ð 30 |
mF, 100 V |
L3 |
Ð |
12 |
T urns, #16 Enameled Wire Closewound, 1/4″ I.D. |
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R1 |
Ð 10 |
W, 10 Watt |
L4 |
Ð |
5 Turns, 1/8 ″ Copper Tubing, 9/16″ I.D., 3/4″ Long |
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L5 Ð 10 |
Ferrite Beads Ð Ferroxcube #56±590±65/3B |
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Figure 1. 30 MHz Test Circuit Schematic
MRF429 |
MOTOROLA RF DEVICE DATA |
2 |
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250 |
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250 |
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CW) |
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f = 30 MHz |
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PEP) |
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f = 30, 30.001 MHz |
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VCC = 50 V |
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ICQ = 150 mA |
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200 |
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I |
CQ |
= 150 mA |
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200 |
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(WATTS |
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(WATTS |
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IMD = d3 |
IMD = ±30 dB |
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40 V |
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POWER |
150 |
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POWER |
150 |
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28 V |
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OUTPUT, |
100 |
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OUTPUT, |
100 |
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± 35 dB |
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out |
50 |
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out |
50 |
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P |
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P |
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0 |
0 |
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2 |
4 |
6 |
8 |
10 |
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0 |
20 |
30 |
40 |
50 |
60 |
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Pin, INPUT POWER (WATTS) |
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VCC, SUPPLY VOLTAGE (VOLTS) |
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Figure 2. Output Power versus Input Power |
Figure 3. Output Power versus Supply Voltage |
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30 |
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350 |
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25 |
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300 |
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f = 30.000 MHz |
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GAIN(dB) |
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ICQ = 150 mA |
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CW)(WATTS |
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VCC = 50 V |
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,POWER |
20 |
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250 |
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out |
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15 |
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, |
200 |
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PE |
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VCC = 50 V |
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TC = 50°C |
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P |
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G |
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ICQ = 150 mA |
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10 |
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Pout = 150 W |
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150 |
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0 |
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100°C |
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100 1 |
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5 |
10 |
30 |
50 |
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1 |
2 |
4 |
7 |
15 |
30 |
60 |
100 |
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3 |
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f, FREQUENCY (MHz) |
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OUTPUT VSWR |
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Figure 4. Power Gain versus Frequency |
Figure 5. RF Safe Operating Area (SOAR) |
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250 |
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VCC = 30 V |
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200 |
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(MHz) |
150 |
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15 V |
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T |
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f |
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100 |
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50 |
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0 |
5 |
10 |
14 |
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0 |
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IC, COLLECTOR CURRENT (AMPS) |
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(dB) |
± 25 |
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DISTORTION |
± 30 |
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VCC = 50 V |
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f = 30, 30.001 MHz |
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± 35 |
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d3 |
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IMD, INTERMODULATION |
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± 40 |
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d5 |
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± 45 |
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± 50 |
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20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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0 |
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Pout, OUTPUT POWER (WATTS PEP) |
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Figure 6. fT versus Collector Current |
Figure 7. IMD versus Pout |
MOTOROLA RF DEVICE DATA |
MRF429 |
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3 |
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5000 |
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20 |
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PARALLEL, EQUIVALENT OUTPUT |
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VCC = 50 V |
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PARALLEL, EQUIVALENT OUTPUT |
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VCC = 50 V |
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4000 |
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ICQ = 150 mA |
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16 |
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ICQ = 150 mA |
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Pout = 150 W PEP |
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Pout = 150 W PEP |
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CAPACITANCE(pF) |
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RESISTANCE(OHMS) |
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1000 |
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4 |
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3000 |
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12 |
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2000 |
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8 |
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out |
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out |
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C |
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R |
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0 |
2 |
4 |
7 |
15 |
30 |
60 |
100 |
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0 |
2 |
4 |
7 |
15 |
30 |
60 |
100 |
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1 |
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1 |
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f, FREQUENCY (MHz) |
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f, FREQUENCY (MHz) |
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Figure 8. Output Capacitance versus Frequency |
Figure 9. Output Resistance versus Frequency |
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60 |
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30 |
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15 |
VCC = 50 V |
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ICQ = 150 mA |
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Pout = 150 W PEP |
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7.0 |
f |
Zin |
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MHz |
Ohms |
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2.0 |
7.15 ± j2.40 |
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4.0 |
4.20 ± j2.25 |
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7.0 |
2.55 ± j1.75 |
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4.0 |
15 |
1.60 ± j1.15 |
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30 |
1.10 ± j0.70 |
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60 |
0.78 ± j0.30 |
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90 |
0.67 ± j0.10 |
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f = 2.0 MHz
Zo = 10 Ω
Figure 10. Series Equivalent Impedance
MRF429 |
MOTOROLA RF DEVICE DATA |
4 |
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PACKAGE DIMENSIONS
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A |
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NOTES: |
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U |
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1. DIMENSIONING AND TOLERANCING PER ANSI |
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Y14.5M, 1982. |
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2. CONTROLLING DIMENSION: INCH. |
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1 |
M |
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INCHES |
MILLIMETERS |
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Q |
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4 |
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DIM |
MIN |
MAX |
MIN |
MAX |
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A |
0.960 |
0.990 |
24.39 |
25.14 |
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R |
B |
B |
0.465 |
0.510 |
11.82 |
12.95 |
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C |
0.229 |
0.275 |
5.82 |
6.98 |
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D |
0.216 |
0.235 |
5.49 |
5.96 |
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E |
0.084 |
0.110 |
2.14 |
2.79 |
2 |
3 |
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H |
0.144 |
0.178 |
3.66 |
4.52 |
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J |
0.003 |
0.007 |
0.08 |
0.17 |
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D |
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K |
0.435 |
±±± |
11.05 |
±±± |
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M |
45 |
NOM |
45 |
NOM |
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K |
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Q |
0.115 |
0.130 |
2.93 |
3.30 |
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R |
0.246 |
0.255 |
6.25 |
6.47 |
J |
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U |
0.720 |
0.730 |
18.29 |
18.54 |
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C |
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STYLE 1: |
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H |
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PIN 1. |
EMITTER |
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E |
SEATING |
2. |
BASE |
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3. |
EMITTER |
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PLANE |
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4. |
COLLECTOR |
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CASE 211±11
ISSUE N
MOTOROLA RF DEVICE DATA |
MRF429 |
|
5 |
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: |
|
USA / EUROPE: Motorola Literature Distribution; |
JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki, |
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447 |
6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315 |
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, |
|
INTERNET: http://Design±NET.com |
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298 |
◊ |
MRF429/D |
|
*MRF429/D* |