

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF421/D
The RF Line
NPN Silicon
RF Power Transistor
Designed primarily for application as a high±power linear amplifier from 2.0 to 30 MHz.
•Specified 12.5 Volt, 30 MHz Characteristics Ð Output Power = 100 W (PEP)
Minimum Gain = 10 dB Efficiency = 40%
•Intermodulation Distortion @ 100 W (PEP) Ð IMD = ±30 dB (Min)
•100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
MAXIMUM RATINGS
MRF421
100 W (PEP), 30 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 211±11, STYLE 1
Rating |
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Symbol |
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Value |
Unit |
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Collector±Emitter Voltage |
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VCEO |
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20 |
Vdc |
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Collector±Base Voltage |
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VCBO |
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45 |
Vdc |
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Emitter±Base Voltage |
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VEBO |
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3.0 |
Vdc |
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Collector Current Ð Continuous |
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IC |
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20 |
Adc |
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Withstand Current Ð 10 s |
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Ð |
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30 |
Adc |
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Total Device Dissipation @ TC = 25°C |
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PD |
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290 |
Watts |
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Derate above 25°C |
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1.66 |
W/°C |
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Storage Temperature Range |
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Tstg |
± 65 to +150 |
°C |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
Unit |
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Thermal Resistance, Junction to Case |
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RθJC |
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0.6 |
°C/W |
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) |
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Characteristic |
Symbol |
Min |
Typ |
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Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) |
V(BR)CEO |
20 |
Ð |
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Ð |
Vdc |
Collector±Emitter Breakdown Voltage (IC = 200 mAdc, VBE = 0) |
V(BR)CES |
45 |
Ð |
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Ð |
Vdc |
Collector±Base Breakdown Voltage (IC = 200 mAdc, IE = 0) |
V(BR)CBO |
45 |
Ð |
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Ð |
Vdc |
Emitter±Base Breakdown Voltage (IE = 10 mAdc, IC = 0) |
V(BR)EBO |
3.0 |
Ð |
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Ð |
Vdc |
Collector Cutoff Current (VCE = 16 Vdc, VBE = 0, TC = 25°C) |
ICES |
Ð |
Ð |
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10 |
mAdc |
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(continued) |
REV 1 |
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MOTOROLAMotorola, Inc. 1997RF DEVICE DATA |
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MRF421 |
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1 |

ELECTRICAL CHARACTERISTICS ± continued (TC = 25°C unless otherwise noted.)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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ON CHARACTERISTICS
DC Current Gain |
hFE |
10 |
70 |
Ð |
Ð |
(IC = 5.0 Adc, VCE = 5.0 Vdc) |
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DYNAMIC CHARACTERISTICS |
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Output Capacitance |
Cob |
Ð |
550 |
800 |
pF |
(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz) |
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FUNCTIONAL TESTS |
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Common±Emitter Amplifier Power Gain |
GPE |
10 |
12 |
Ð |
dB |
(VCC = 12.5 Vdc, Pout = 100 W, IC(max) = 10 Adc, |
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ICQ = 150 mAdc, f = 30, 30.001 MHz) |
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Collector Efficiency |
h |
40 |
Ð |
Ð |
% |
(VCC = 12.5 Vdc, Pout = 100 W, IC(max) = 10 Adc, |
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ICQ = 150 mA, f = 30, 30.001 MHz) |
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Intermodulation Distortion (1) |
IMD |
Ð |
± 33 |
± 30 |
dB |
(VCE = 12.5 Vdc, Pout = 100 W, IC = 10 Adc, |
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ICQ = 150 mA, f = 30, 30.001 MHz) |
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NOTE: |
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1. To proposed EIA method of measurement. Reference peak envelope power.
+ |
R1 |
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+ |
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BIAS |
CR1 |
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L5 |
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12.5 Vdc |
C5 |
C6 |
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C7 |
C8 |
C9 |
C10 |
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± |
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L4 |
L2 |
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± |
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C4 |
RF |
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C2 |
L1 |
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RF |
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OUTPUT |
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INPUT |
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D.U.T. |
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C1 |
R2 |
C3 |
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L3 |
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C1, C2, C4 Ð 170 ± 780 pF, ARCO 469 |
R2 Ð 10 W, 1.0 Watt Carbon |
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C3 |
Ð 80 ± 480 pF, ARCO 466 |
CR1 Ð 1N4997 |
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C5, C7, C10 Ð ERIE 0.1 mF, 100 V |
L1 |
Ð 3 Turns, #16 Wire, 5/16 ″ I.D., 5/16″ Long |
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C6 |
Ð MALLORY 500 mF @ 15 V Electrolytic |
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L2 |
Ð 12 Turns, #16 Enameled Wire Closewound, 1/4 ″ I.D. |
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C9 |
Ð 100 mF, 15 V Electrolytic |
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L3 |
Ð 1±3/4 Turns, 1/8 ″ Tubing, 3/8″ I.D., 3/8″ Long |
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C8 |
Ð 1000 pF, 350 V UNDERWOOD |
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L4 |
Ð 10 mH Molded Choke |
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R1 |
Ð 10 W, 25 Watt Wirewound |
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L5 |
Ð 10 Ferrite Beads Ð FERROXCUBE #56±590±65/3B |
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Figure 1. 30 MHz Test Circuit Schematic
MRF421 |
MOTOROLA RF DEVICE DATA |
2 |
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160 |
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PEP) |
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VCC = 12.5 V |
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ICQ = 150 mA |
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(WATTS |
120 |
TWO TONE TEST: |
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f = 30, 30.001 MHz |
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OUTPUT POWER |
80 |
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40 |
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, |
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out |
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P |
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0 |
4 |
8 |
12 |
16 |
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0 |
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160 |
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PEP) |
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IMD = ± 30 dB |
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ICQ = 150 mA |
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(WATTS |
120 |
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f = 30, 30.001 MHz |
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OUTPUT POWER |
80 |
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40 |
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, |
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out |
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P |
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0 |
10 |
12 |
14 |
16 |
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8 |
Pin, INPUT POWER (WATTS PEP) |
VCC, SUPPLY VOLTAGE (VOLTS) |
Figure 2. Output Power versus Input Power |
Figure 3. Output Power versus Supply Voltage |
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25 |
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(dB) |
20 |
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POWER GAIN |
15 |
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10 |
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, |
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PE |
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VCC = 12.5 V |
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G |
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ICQ = 150 mA |
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5 |
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Pout |
= 100 W PEP |
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0 |
2 |
3 |
5 |
7 |
10 |
15 |
20 |
30 |
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1.5 |
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± 20 |
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(dB) |
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VCC = 12.5 V |
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DISTORTION |
± 25 |
ICQ = 150 mA |
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f = 30, 30.001 MHz |
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± 30 |
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INTERMODULATION |
± 35 |
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3RD ORDER |
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± 40 |
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5TH ORDER |
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IMD, |
± 45 |
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0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
f, FREQUENCY (MHz) |
Pout, OUTPUT POWER (WATTS PEP) |
Figure 4. Power Gain versus Frequency |
Figure 5. Intermodulation Distortion |
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versus Output Power |
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40 |
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(AMP) |
20 |
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CURRENT |
8 |
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30 |
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4 |
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TC = 25°C |
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15 |
COLLECTOR, |
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2 |
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Zin |
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7.5 |
I |
0.8 |
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C |
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0.4 |
2 |
5 |
10 |
20 |
50 |
100 |
f = 2 MHz |
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1 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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VCC = 12.5 V
ICQ = 150 mA
Pout = 100 W PEP
FREQUENCY |
Zin |
MHz |
Ohms |
2.05.35 ± j2.2
7.52.8 ± j1.9
15 |
1.39 |
± j1.1 |
30 |
0.7 |
± j0.5 |
Figure 6. DC Safe Operating Area |
Figure 7. Series Equivalent Impedance |
MOTOROLA RF DEVICE DATA |
MRF421 |
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3 |

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20,000 |
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OUTPUT |
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VCC = 12.5 V |
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16,000 |
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ICQ = 150 mA |
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Pout = 100 W (PEP) |
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PARALLELEQUIVALENT |
12,000 |
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8000 |
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CAPACITANCE(pF) |
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, |
4000 |
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out |
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C |
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0 |
2 |
3 |
5 |
7 |
10 |
15 |
20 |
30 |
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1.5 |
f, FREQUENCY (MHz)
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2.5 |
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PARALLEL EQUIVALENT OUTPUT |
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VCC = 12.5 V |
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2 |
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ICQ = 150 mA |
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Pout = 100 W (PEP) |
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RESISTANCE (OHMS) |
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1.5 |
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1 |
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0.5 |
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, |
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out |
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R |
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0 |
2 |
3 |
5 |
7 |
10 |
15 |
20 |
30 |
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1.5 |
f, FREQUENCY (MHz)
Figure 8. Output Capacitance versus Frequency |
Figure 9. Output Resistance versus Frequency |
PACKAGE DIMENSIONS
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A |
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NOTES: |
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U |
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1. DIMENSIONING AND TOLERANCING PER ANSI |
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M |
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Y14.5M, 1982. |
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2. CONTROLLING DIMENSION: INCH. |
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1 |
M |
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INCHES |
MILLIMETERS |
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Q |
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4 |
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DIM |
MIN |
MAX |
MIN |
MAX |
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A |
0.960 |
0.990 |
24.39 |
25.14 |
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R |
B |
B |
0.465 |
0.510 |
11.82 |
12.95 |
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C |
0.229 |
0.275 |
5.82 |
6.98 |
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D |
0.216 |
0.235 |
5.49 |
5.96 |
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E |
0.084 |
0.110 |
2.14 |
2.79 |
2 |
3 |
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H |
0.144 |
0.178 |
3.66 |
4.52 |
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J |
0.003 |
0.007 |
0.08 |
0.17 |
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D |
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K |
0.435 |
±±± |
11.05 |
±±± |
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M |
45 |
NOM |
45 |
NOM |
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K |
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Q |
0.115 |
0.130 |
2.93 |
3.30 |
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R |
0.246 |
0.255 |
6.25 |
6.47 |
J |
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U |
0.720 |
0.730 |
18.29 |
18.54 |
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C |
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STYLE 1: |
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H |
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PIN 1. |
EMITTER |
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E |
SEATING |
2. |
BASE |
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3. |
EMITTER |
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PLANE |
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4. |
COLLECTOR |
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CASE 211±11
ISSUE N
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: |
|
USA / EUROPE: Motorola Literature Distribution; |
JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki, |
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447 |
6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315 |
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, |
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INTERNET: http://Design±NET.com |
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298 |
◊ |
MRF421/D |
|
MOTOROLA RF DEVICE DATA |
|
*MRF421/D* |