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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF421/D

The RF Line

NPN Silicon

RF Power Transistor

Designed primarily for application as a high±power linear amplifier from 2.0 to 30 MHz.

Specified 12.5 Volt, 30 MHz Characteristics Ð Output Power = 100 W (PEP)

Minimum Gain = 10 dB Efficiency = 40%

Intermodulation Distortion @ 100 W (PEP) Ð IMD = ±30 dB (Min)

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

MAXIMUM RATINGS

MRF421

100 W (PEP), 30 MHz

RF POWER

TRANSISTORS

NPN SILICON

CASE 211±11, STYLE 1

Rating

 

Symbol

 

Value

Unit

 

 

 

 

 

 

 

Collector±Emitter Voltage

 

VCEO

 

20

Vdc

Collector±Base Voltage

 

VCBO

 

45

Vdc

Emitter±Base Voltage

 

VEBO

 

3.0

Vdc

Collector Current Ð Continuous

 

IC

 

20

Adc

Withstand Current Ð 10 s

 

Ð

 

30

Adc

 

 

 

 

 

 

 

Total Device Dissipation @ TC = 25°C

 

PD

 

290

Watts

Derate above 25°C

 

 

 

1.66

W/°C

 

 

 

 

 

 

Storage Temperature Range

 

Tstg

± 65 to +150

°C

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

Symbol

 

Max

Unit

 

 

 

 

 

 

 

Thermal Resistance, Junction to Case

 

RθJC

 

0.6

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

Min

Typ

 

Max

Unit

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0)

V(BR)CEO

20

Ð

 

Ð

Vdc

Collector±Emitter Breakdown Voltage (IC = 200 mAdc, VBE = 0)

V(BR)CES

45

Ð

 

Ð

Vdc

Collector±Base Breakdown Voltage (IC = 200 mAdc, IE = 0)

V(BR)CBO

45

Ð

 

Ð

Vdc

Emitter±Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

V(BR)EBO

3.0

Ð

 

Ð

Vdc

Collector Cutoff Current (VCE = 16 Vdc, VBE = 0, TC = 25°C)

ICES

Ð

Ð

 

10

mAdc

 

 

 

 

 

 

(continued)

REV 1

 

 

 

 

 

 

 

 

 

 

 

 

 

MOTOROLAMotorola, Inc. 1997RF DEVICE DATA

 

 

 

 

 

MRF421

 

 

 

 

 

 

1

ELECTRICAL CHARACTERISTICS ± continued (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

ON CHARACTERISTICS

DC Current Gain

hFE

10

70

Ð

Ð

(IC = 5.0 Adc, VCE = 5.0 Vdc)

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Output Capacitance

Cob

Ð

550

800

pF

(VCB = 12.5 Vdc, IE = 0, f = 1.0 MHz)

 

 

 

 

 

FUNCTIONAL TESTS

 

 

 

 

 

 

 

 

 

 

 

Common±Emitter Amplifier Power Gain

GPE

10

12

Ð

dB

(VCC = 12.5 Vdc, Pout = 100 W, IC(max) = 10 Adc,

 

 

 

 

 

ICQ = 150 mAdc, f = 30, 30.001 MHz)

 

 

 

 

 

Collector Efficiency

h

40

Ð

Ð

%

(VCC = 12.5 Vdc, Pout = 100 W, IC(max) = 10 Adc,

 

 

 

 

 

ICQ = 150 mA, f = 30, 30.001 MHz)

 

 

 

 

 

Intermodulation Distortion (1)

IMD

Ð

± 33

± 30

dB

(VCE = 12.5 Vdc, Pout = 100 W, IC = 10 Adc,

 

 

 

 

 

ICQ = 150 mA, f = 30, 30.001 MHz)

 

 

 

 

 

NOTE:

 

 

 

 

 

1. To proposed EIA method of measurement. Reference peak envelope power.

+

R1

 

 

 

 

 

 

 

+

 

 

 

 

 

 

 

 

BIAS

CR1

 

 

 

 

 

L5

 

12.5 Vdc

C5

C6

 

C7

C8

C9

C10

±

 

 

 

L4

L2

 

 

 

±

 

 

 

 

 

 

 

 

 

 

 

 

 

C4

RF

 

C2

L1

 

 

RF

 

 

OUTPUT

 

 

 

 

INPUT

 

 

D.U.T.

 

 

 

C1

R2

C3

 

L3

 

 

 

 

C1, C2, C4 Ð 170 ± 780 pF, ARCO 469

R2 Ð 10 W, 1.0 Watt Carbon

C3

Ð 80 ± 480 pF, ARCO 466

CR1 Ð 1N4997

C5, C7, C10 Ð ERIE 0.1 mF, 100 V

L1

Ð 3 Turns, #16 Wire, 5/16 ″ I.D., 5/16″ Long

C6

Ð MALLORY 500 mF @ 15 V Electrolytic

L2

Ð 12 Turns, #16 Enameled Wire Closewound, 1/4 ″ I.D.

C9

Ð 100 mF, 15 V Electrolytic

L3

Ð 1±3/4 Turns, 1/8 ″ Tubing, 3/8″ I.D., 3/8″ Long

C8

Ð 1000 pF, 350 V UNDERWOOD

L4

Ð 10 mH Molded Choke

R1

Ð 10 W, 25 Watt Wirewound

L5

Ð 10 Ferrite Beads Ð FERROXCUBE #56±590±65/3B

 

 

Figure 1. 30 MHz Test Circuit Schematic

MRF421

MOTOROLA RF DEVICE DATA

2

 

 

160

 

 

 

 

PEP)

 

VCC = 12.5 V

 

 

 

 

ICQ = 150 mA

 

 

 

(WATTS

120

TWO TONE TEST:

 

 

 

 

f = 30, 30.001 MHz

 

 

 

 

 

 

 

 

OUTPUT POWER

80

 

 

 

 

40

 

 

 

 

,

 

 

 

 

out

 

 

 

 

 

P

 

 

 

 

 

 

0

4

8

12

16

 

0

 

160

 

 

 

 

PEP)

 

IMD = ± 30 dB

 

 

 

 

ICQ = 150 mA

 

 

 

(WATTS

120

 

 

 

f = 30, 30.001 MHz

 

 

 

 

 

 

 

 

OUTPUT POWER

80

 

 

 

 

40

 

 

 

 

,

 

 

 

 

out

 

 

 

 

 

P

 

 

 

 

 

 

0

10

12

14

16

 

8

Pin, INPUT POWER (WATTS PEP)

VCC, SUPPLY VOLTAGE (VOLTS)

Figure 2. Output Power versus Input Power

Figure 3. Output Power versus Supply Voltage

 

25

 

 

 

 

 

 

 

 

(dB)

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

POWER GAIN

15

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

PE

 

VCC = 12.5 V

 

 

 

 

 

 

G

 

ICQ = 150 mA

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

Pout

= 100 W PEP

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

2

3

5

7

10

15

20

30

 

1.5

 

± 20

 

 

 

 

 

 

 

(dB)

 

VCC = 12.5 V

 

 

 

 

 

 

DISTORTION

± 25

ICQ = 150 mA

 

 

 

 

 

 

f = 30, 30.001 MHz

 

 

 

 

 

 

 

 

 

 

 

± 30

 

 

 

 

 

 

 

INTERMODULATION

± 35

 

3RD ORDER

 

 

 

 

 

 

 

 

 

 

± 40

 

 

5TH ORDER

 

 

 

 

 

 

 

 

 

IMD,

± 45

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

20

40

60

80

100

120

140

f, FREQUENCY (MHz)

Pout, OUTPUT POWER (WATTS PEP)

Figure 4. Power Gain versus Frequency

Figure 5. Intermodulation Distortion

 

versus Output Power

 

40

 

 

 

 

 

 

 

(AMP)

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

8

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

4

 

 

 

 

TC = 25°C

 

15

COLLECTOR,

 

 

 

 

 

 

2

 

 

 

 

 

 

Zin

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

7.5

I

0.8

 

 

 

 

 

 

 

C

 

 

 

 

 

 

 

 

 

0.4

2

5

10

20

50

100

f = 2 MHz

 

1

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

 

VCC = 12.5 V

ICQ = 150 mA

Pout = 100 W PEP

FREQUENCY

Zin

MHz

Ohms

2.05.35 ± j2.2

7.52.8 ± j1.9

15

1.39

± j1.1

30

0.7

± j0.5

Figure 6. DC Safe Operating Area

Figure 7. Series Equivalent Impedance

MOTOROLA RF DEVICE DATA

MRF421

 

3

 

20,000

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

VCC = 12.5 V

 

16,000

 

 

 

 

 

ICQ = 150 mA

 

 

 

 

 

 

Pout = 100 W (PEP)

 

 

 

 

 

 

 

 

PARALLELEQUIVALENT

12,000

 

 

 

 

 

 

 

 

8000

 

 

 

 

 

 

 

 

CAPACITANCE(pF)

 

 

 

 

 

 

 

 

,

4000

 

 

 

 

 

 

 

 

out

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

 

 

 

 

 

 

 

 

 

 

0

2

3

5

7

10

15

20

30

 

1.5

f, FREQUENCY (MHz)

 

 

2.5

 

 

 

 

 

 

 

 

PARALLEL EQUIVALENT OUTPUT

 

 

 

 

 

 

 

VCC = 12.5 V

 

 

2

 

 

 

 

 

ICQ = 150 mA

 

 

 

 

 

 

 

Pout = 100 W (PEP)

 

RESISTANCE (OHMS)

 

 

 

 

 

 

 

1.5

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

out

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

R

 

 

 

 

 

 

 

 

 

 

 

 

0

2

3

5

7

10

15

20

30

 

 

1.5

f, FREQUENCY (MHz)

Figure 8. Output Capacitance versus Frequency

Figure 9. Output Resistance versus Frequency

PACKAGE DIMENSIONS

 

A

 

NOTES:

 

 

 

 

 

U

 

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

M

 

 

 

Y14.5M, 1982.

 

 

 

 

 

 

2. CONTROLLING DIMENSION: INCH.

1

M

 

 

INCHES

MILLIMETERS

Q

 

 

4

 

DIM

MIN

MAX

MIN

MAX

 

 

A

0.960

0.990

24.39

25.14

 

 

 

 

R

B

B

0.465

0.510

11.82

12.95

 

C

0.229

0.275

5.82

6.98

 

 

 

D

0.216

0.235

5.49

5.96

 

 

 

E

0.084

0.110

2.14

2.79

2

3

 

H

0.144

0.178

3.66

4.52

 

J

0.003

0.007

0.08

0.17

 

D

 

K

0.435

±±±

11.05

±±±

 

 

M

45

NOM

45

NOM

K

 

 

 

 

Q

0.115

0.130

2.93

3.30

 

 

 

R

0.246

0.255

6.25

6.47

J

 

 

U

0.720

0.730

18.29

18.54

 

 

 

 

 

 

 

 

C

 

STYLE 1:

 

H

 

PIN 1.

EMITTER

E

SEATING

2.

BASE

 

3.

EMITTER

 

 

PLANE

 

 

4.

COLLECTOR

 

 

 

CASE 211±11

ISSUE N

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

MRF421/D

 

MOTOROLA RF DEVICE DATA

 

*MRF421/D*

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