Добавил:

student_tipo Опубликованный материал нарушает ваши авторские права? Сообщите нам.

Вуз:

Балаковский институт техники, технологии и управления

Предмет:

[НЕСОРТИРОВАННОЕ]

Файл:

mrf148rev1

.pdf

Источник:

https://manualmachine.com

Скачиваний:

Добавлен:

06.01.2022

Размер:

148.41 Кб

Скачать

☆

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF148/D

The RF MOSFET Line
RF Power Field-Effect Transistor
N±Channel Enhancement±Mode	MRF148

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz.

• Superior High Order IMD
• Superior High Order IMD
• Specified 50 Volts, 30 MHz Characteristics
• Specified 50 Volts, 30 MHz Characteristics			30 W, to 175 MHz
Output Power = 30 Watts			30 W, to 175 MHz
Power Gain = 18 dB (Typ)			N±CHANNEL MOS
Power Gain = 18 dB (Typ)		LINEAR RF POWER
Efficiency = 40% (Typ)		LINEAR RF POWER
Efficiency = 40% (Typ)				FET
• IMD(d3) (30 W PEP) Ð ±35 dB (Typ)				FET
• IMD(d3) (30 W PEP) Ð ±35 dB (Typ)
• IMD(d11) (30 W PEP) Ð ±60 dB (Typ)
• 100% Tested For Load Mismatch At All Phase Angles With
30:1 VSWR
	D

MAXIMUM RATINGS	G	S	CASE 211±07, STYLE 2









Rating		Symbol	Value	Unit

Drain±Source Voltage		VDSS	120	Vdc
Drain±Gate Voltage		VDGO	120	Vdc
Gate±Source Voltage		VGS	± 40	Vdc
Drain Current Ð Continuous		ID	6.0	Adc
Total Device Dissipation @ TC = 25°C		PD	115	Watts
Derate above 25°C			0.66	W/°C

Storage Temperature Range		Tstg	± 65 to +150	°C
Operating Junction Temperature		TJ	200	°C
THERMAL CHARACTERISTICS

Characteristic		Symbol	Max	Unit

Thermal Resistance, Junction to Case		RθJC	1.52	°C/W

Handling and Packaging Ð MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

REV 1

Motorola, Inc. 1995

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Drain±Source Breakdown Voltage (VGS = 0, ID = 10 mA)

V(BR)DSS

125

Vdc

Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0)

IDSS

1.0

mAdc

Gate±Body Leakage Current (VGS = 20 V, VDS = 0)

IGSS

100

nAdc

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 10 mA)

VGS(th)

1.0

3.0

5.0

Vdc

Drain±Source On±Voltage (VGS = 10 V, ID = 2.5 A)

VDS(on)

1.0

3.0

5.0

Vdc

Forward Transconductance (VDS = 10 V, ID = 2.5 A)

gfs

0.8

1.2

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)

Ciss

Output Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)

Coss

Reverse Transfer Capacitance (VDS = 50 V, VGS = 0, f = 1.0 MHz)

Crss

8.0

FUNCTIONAL TESTS (SSB)

Common Source Amplifier Power Gain

(30 MHz)

Gps

(VDD = 50 V, Pout = 30 W (PEP), IDQ = 100 mA)

(175 MHz)

Drain Efficiency

(30 W PEP)

(VDD = 50 V, f = 30 MHz, IDQ = 100 mA)

(30 W CW)

Intermodulation Distortion

(VDD = 50 V, Pout = 30 W (PEP),

IMD(d3)

± 35

f = 30; 30.001 MHz, IDQ = 100 mA)

IMD(d11)

± 60

Load Mismatch

(VDD = 50 V, Pout = 30 W (PEP), f = 30; 30.001 MHz,

No Degradation in Output Power

IDQ = 100 mA, VSWR 30:1 at all Phase Angles)

CLASS A PERFORMANCE

Intermodulation Distortion (1) and Power Gain

GPS

(VDD = 50 V, Pout = 10 W (PEP), f1 = 30 MHz,

IMD(d3)

± 50

f2 = 30.001 MHz, IDQ = 1.0 A)

IMD(d9 ± 13)

± 70

NOTE:

1. To MIL±STD±1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone.

BIAS

0 ± 10 V

± 50 V

R3 C2

DUT

OUTPUT

INPUT

R1, R2 Ð 200 Ω, 1/2 W Carbon

C1, C2, C3, C4, C5, C6 Ð 0.1 μF Ceramic Chip or Equivalent

C7 Ð 10 μF, 100 V Electrolytic

R3 Ð 4.7 Ω, 1/2 W Carbon

C8 Ð 100 pF Dipped Mica

R4 Ð 470 Ω, 1.0 W Carbon

L1 Ð VK200 20/4B Ferrite Choke or Equivalent (3.0 μH)

T1 Ð 4:1 Impedance Transformer

L2 Ð Ferrite Bead(s), 2.0 μH

T2 Ð 1:2 Impedance Transformer

Figure 1. 2.0 to 50 MHz Broadband Test Circuit

MRF148	MOTOROLA RF DEVICE DATA
2

	25							60
	20						POWER (WATTS)	40
	20
GAIN (dB)								20
	15			VDD = 50 V				0
				VDD = 50 V				0
				IDQ = 100 mA
POWER				IDQ = 100 mA			, OUTPUT	60
	10			Pout = 30 W (PEP)				60
								40
	5						out
	5						P	20
								20
	0	5	10	20	50	100	200	0
	2	5	10	20	50	100	200

f, FREQUENCY (MHz)

	VDD = 50 V	150MHz
	40 V
		IDQ = 100 mA

	VDD = 50 V				30 MHz
	40 V				30 MHz
				IDQ = 100 mA
0	0.5	1	1.5	2	2.5
		Pin, INPUT POWER (WATTS)

Figure 2. Power Gain versus Frequency

Figure 3. Output Power versus Input Power

IMD, INTERMODULATION DISTORTION (dB)

± 30
d3
± 40	MHz
d5	150
± 50

VDD = 50 V, IDQ = 100 mA, TONE SEPARATION 1 kHz

± 30
± 40		d3		MHz
				30
± 50			d5
± 50	10	20	30	40
0	10	20	30	40

	2000
(MHz)					VDS = 30 V
(MHz)
FREQUENCY				VDS = 15 V
FREQUENCY	1000
, UNITY GAIN
T
f
	0	1	2	3	4
	0	1	2	3	4

Pout, OUTPUT POWER (WATTS PEP)			ID, DRAIN CURRENT (AMPS)
Figure 4. IMD versus Pout			Figure 5. Common Source Unity Gain Frequency
			versus Drain Current
+ BIAS		R2	RFC1	+ 50 Vdc
				+ 50 Vdc
0 ± 6 V
0 ± 6 V	C2		C4	C5
C3	C2		C4	C5
C3			L2
			L2
			D.U.T.	C7	RF OUTPUT
				C7
RF INPUT	R1		L1
	R1		L1	C6
				C6
		C1
	T1
C1 Ð 91 pF Unelco Type MCM 01/010			L2 Ð 4 Turns #18 AWG, 5/16 ″ ID
C2, C4 Ð 0.1 mF Erie Red Cap			R1 Ð 1.0 Ohm, 1/4 W Carbon		50 W
C3 Ð Allen Bradley 680 pF Feed Thru			R2 Ð 2000 Ohm, 1/4 W Carbon		12.5 W
C5 Ð 1.0 mF, 50 Vdc Electrolytic			RFC1 Ð VK200 21/4B		12.5 W
C5 Ð 1.0 mF, 50 Vdc Electrolytic			RFC1 Ð VK200 21/4B
C6 Ð 15 pF Unelco Type J101			T1 Ð 4:1 Transformer, 1.75 ″ Subminiature	T1 Ð 4:1 Impedance Ratio
C7 Ð 24 pF Unelco Type MCM 01/010			T1 Ð Coaxial Cable	T1 Ð Transformer, Line
L1 Ð 2 Turns #18 AWG, 5/16 ″ ID				T1 Ð Impedance = 25 W
		Figure 6. 150 MHz Test Circuit
MOTOROLA RF DEVICE DATA					MRF148
					3

I DS , DRAIN CURRENT (AMPS)

2											10
2											7
											7
										(AMPS)	5
										(AMPS)	3
											3
										CURRENT	2
										CURRENT	1					TC = 25°C
																TC = 25°C
1
										DRAIN,	0.7
										DRAIN,	0.5
											0.5
								VDS = 10 V		I	0.3
										D
								gfs = 1.2 mho			0.2
00	1	2	3	4	5	6	7	8	9	10	0.10.2	0.4	0.7	1	2	4	7	10	20	40	70	100	200
			VGS, GATE±SOURCE VOLTAGE (VOLTS)										VDS, DRAIN±SOURCE VOLTAGE (VOLTS)

Figure 7. Gate Voltage versus Drain Current

Figure 8. DC Safe Operating Area (SOA)

175
150
50	175
50
30		ZOL*
15	f = 2.0 MHz
15		VDD = 50 V
		VDD = 50 V
7.0	Zin	IDQ = 100 mA
7.0		Pout = 30 W PEP
		Pout = 30 W PEP
4.0		Gate Shunted By 100 Ω
4.0

f = 2.0 MHz

ZOL* = Conjugate of the optimum load impedance

ZOL* = into which the device output operates at a

ZOL* = given output power, voltage and frequency.

Figure 9. Impedance Coordinates Ð 50 Ohm

Characteristic Impedance

MRF148	MOTOROLA RF DEVICE DATA
4

RF POWER MOSFET CONSIDERATIONS

MOSFET CAPACITANCES

The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate±to±drain (Cgd), and gate±to±source (Cgs). The PN junction formed during the fabrication of the RF MOSFET results in a junction capacitance from drain±to±source (Cds).

These capacitances are characterized as input (Ciss), output(Coss)and reversetransfer(Crss)capacitancesondata sheets. The relationships between the inter±terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways:

1.Drain shorted to source and positive voltage at the gate.

2.Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications.

DRAIN
Cgd
GATE	Ciss = Cgd + Cgs
Cds	C	= C	+ C
	oss	gd	ds
	Crss = Cgd
Cgs
SOURCE

LINEARITY AND GAIN CHARACTERISTICS

In addition to the typical IMD and power gain data presented, Figure 5 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain current level. This is equivalent to fT for bipolar transistors.

Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent.

DRAIN CHARACTERISTICS

One figure of merit for a FET is its static resistance in the full±on condition. This on±resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate±source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device.

GATE CHARACTERISTICS

The gate of the RF MOSFET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high Ð on the order of 10 9 ohms Ð resulting in a leakage current of a few nanoamperes.

Gate control is achieved by applying a positive voltage slightly in excess of the gate±to±source threshold voltage,

VGS(th).

Gate Voltage Rating Ð Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region.

Gate Termination Ð The gates of these devices are essentially capacitors. Circuits that leave the gate open±circuited or floating should be avoided. These conditions can result in turn±on of the devices due to voltage build±up on the input capacitor due to leakage currents or pickup.

Gate Protection Ð These devices do not have an internal monolithic zener diode from gate±to±source. If gate protection is required, an external zener diode is recommended.

EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY

Collector . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Drain
Emitter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Source
Base . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Gate
V(BR)CES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	V(BR)DSS
VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	VDGO
IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	ID
ICES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	IDSS
IEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	IGSS
VBE(on) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	VGS(th)
VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	VDS(on)
Cib . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Ciss
Cob . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Coss
hfe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	gfs

RCE(sat) = VCE(sat) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . rDS(on) =

VDS(on)

MOTOROLA RF DEVICE DATA	MRF148
	5

PACKAGE DIMENSIONS

S K

A
U		NOTES:
M		1. DIMENSIONING AND TOLERANCING PER ANSI
M		Y14.5M, 1982.
M		2. CONTROLLING DIMENSION: INCH.
M			INCHES		MILLIMETERS
			INCHES		MILLIMETERS
4		DIM	MIN	MAX	MIN	MAX
4		A	0.960	0.990	24.39	25.14
	B	A	0.960	0.990	24.39	25.14
R	B	B	0.370	0.390	9.40	9.90
		C	0.229	0.281	5.82	7.13
		D	0.215	0.235	5.47	5.96
3		E	0.085	0.105	2.16	2.66
3		H	0.150	0.108	3.81	4.57
		H	0.150	0.108	3.81	4.57
D		J	0.004	0.006	0.11	0.15
D		K	0.395	0.405	10.04	10.28
		M	40	50	40	50
		Q	0.113	0.130	2.88	3.30
		R	0.245	0.255	6.23	6.47
		S	0.790	0.810	20.07	20.57
		U	0.720	0.730	18.29	18.54

		STYLE 2:
	J	PIN 1.	SOURCE
		2.	GATE
	C	3.	SOURCE
H	C	4.	DRAIN
H	E	SEATING
		PLANE

CASE 211±07

ISSUE N

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊	MRF148/D
	MRF148/D

Соседние файлы в папке СВЧ

#
06.01.2022291.5 Кб2mrf136rev6.pdf
#
06.01.2022201.2 Кб2mrf137rev6.pdf
#
06.01.2022167.81 Кб2mrf140rev8.pdf
#
06.01.2022146.77 Кб2mrf141grev2d.pdf
#
06.01.2022164.49 Кб2mrf141rev8.pdf
#
06.01.2022148.41 Кб2mrf148rev1.pdf
#
06.01.2022105.72 Кб2mrf1500rev6.pdf
#
06.01.2022162.56 Кб2mrf15030rev7.pdf
#
06.01.2022168.28 Кб2mrf15060rev0.pdf
#
06.01.2022211.27 Кб2mrf1507rev1.pdf
#
06.01.2022215.48 Кб2mrf15090rev0.pdf