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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF6409/D

The RF Line

 

 

 

 

NPN

Silicon

 

 

 

 

RF

Power Transistor

MRF6409

 

 

 

 

The MRF6409 is designed for GSM base stations applications. It incorpo-

 

 

 

 

rates high value emitter ballast resistors, gold metallizations and offers a high

 

 

 

 

degree of reliability and ruggedness.

 

 

 

 

 

 

 

 

To be used in Class AB

 

 

 

 

 

 

 

 

Specified 26 Volts, 960 MHz Characteristics

 

20 W, 960 MHz

Output Power Ð 20 Watts CW

RF POWER TRANSISTOR

Gain Ð 11 dB Typ

 

NPN SILICON

Efficiency Ð 60% Typ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CASE 319±07, STYLE 2

MAXIMUM RATINGS

Rating

 

Symbol

 

Value

Unit

 

 

 

 

 

 

 

Collector±Emitter Voltage

 

VCEO

 

24

Vdc

Collector±Emitter Voltage

 

VCES

 

55

Vdc

Emitter±Base Voltage

 

VEBO

 

4.0

Vdc

Collector±Current Ð Continuous

 

IC

 

5.0

Adc

Total Device Dissipation @ TC = 25°C

 

PD

 

45

Watts

Derate above 25°C

 

 

 

0.26

W/°C

 

 

 

 

 

 

Storage Temperature Range

 

Tstg

± 65 to +150

°C

Operating Junction Temperature

 

TJ

 

200

°C

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

Symbol

 

Max

Unit

 

 

 

 

 

 

 

Thermal Resistance, Junction to Case (1)

 

RθJC

 

3.8

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

 

 

 

 

 

Characteristic

Symbol

Min

Typ

 

Max

Unit

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Breakdown Voltage

V(BR)CEO

24

30

 

Ð

Vdc

(IC = 20 mAdc, IB = 0)

 

 

 

 

 

 

Emitter±Base Breakdown Voltage

V(BR)EBO

4.0

5.0

 

Ð

Vdc

(IB = 5.0 mAdc, IC =0)

 

 

 

 

 

 

Collector±Emitter Breakdown Voltage

V(BR)CES

55

60

 

Ð

Vdc

(IC = 20 mAdc, VBE = 0)

 

 

 

 

 

 

Collector±Cutoff Current

ICES

Ð

Ð

 

6.0

mA

(VCE = 30 Vdc, VBE = 0)

 

 

 

 

 

 

(1) Thermal resistance is determined under specified RF operating condition.

MOTOROLAMotorola, Inc. 1997RF DEVICE DATA

MRF6409

 

1

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

ON CHARACTERISTICS

DC Current Gain

hFE

20

35

80

Ð

(ICE = 1.0 Adc, VCE = 5.0 Vdc)

 

 

 

 

 

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

Ð

18

Ð

pF

(VCB = 26 Vdc, IE = 0, f = 1.0 MHz)

 

 

 

 

 

FUNCTIONAL TESTS

Common±Emitter Amplifier Power Gain

Gpe

10

 

11

Ð

 

dB

(VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz)

 

 

 

 

 

 

 

Collector Efficiency

η

50

 

60

Ð

 

%

(VCC = 26 Vdc, Pout = 20 W (CW), ICQ = 50 mA, f = 960 MHz)

 

 

 

 

 

 

 

Load Mismatch

Ψ

 

 

 

 

 

 

(VCC = 26 Vdc, Pout = 15 W (CW), ICQ = 50 mA, f = 960 MHz,

 

 

No Degradation in Output Power

 

Load VSWR = 3:1, All Phase Angles at Frequency of Test)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

T1

 

 

 

 

 

 

 

+

 

 

 

 

 

 

5.0 V

 

 

 

C8

R2

 

±

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C7

D2

R3

P1

 

 

 

 

 

 

B2

 

 

 

D1

 

 

 

+

 

 

 

 

 

 

C6

 

 

 

 

 

 

C9

C10

C11

26 V

 

 

 

 

 

 

±

R1

 

 

 

C3

 

B1

 

C5

 

RF OUTPUT

 

 

RF INPUT

 

 

C1

C2

C4

 

D.U.T.

 

B1, B2

Ferrite Bead

C11

4.7 μF, 50 V, Tantalum Capacitor

C1

3.3 pF, Chip Capacitor, High Q

D1, D2

Diode BAS16 Type or Equivalent

C2, C3

4.7 pF, Chip Capacitor, High Q

P1

1.0 kΩ, Trimmer

C4

2.2 pF, Chip Capacitor, High Q

R1

3.3 Ω, Chip Resistor

C5

82 pF, Chip Capacitor, High Q

R2

68 Ω, Chip Resistor

C6, C9

330 pF, Chip Capacitor, High Q

R3

2.2 kΩ, Resistor

C7, C10

0.1 μF, Chip Capacitor

T1

NPN Transistor

C8

22 μF, 16 V, Tantalum Capacitor

Board

Glass Teflon , εr = 2.55, H = 1/50 inch

Figure 1. Test Circuit Electrical Schematic

MRF6409

MOTOROLA RF DEVICE DATA

2

 

 

 

 

 

 

 

 

 

 

 

TYPICAL CHARACTERISTICS

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

 

 

25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

24

 

 

 

 

 

(WATTS)

25

 

 

 

 

 

 

 

 

 

 

 

(WATTS)

22

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

23

 

 

 

 

 

POWER

20

 

 

 

 

 

 

 

 

 

 

 

POWER

20

 

 

 

 

 

15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT,

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT,

21

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

18

 

 

 

VCE = 26 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

19

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

out

 

 

 

 

 

 

 

 

 

VCE = 26 V

 

out

17

 

 

 

I = 50 mA

 

P

5.0

 

 

 

 

 

 

 

 

IQ = 50 mA

 

P

 

 

 

Q

 

 

 

 

 

 

 

 

 

 

 

 

16

 

 

 

Pin = 1 W

 

 

 

 

 

 

 

 

 

 

 

f = 960 MHz

 

 

 

 

 

 

 

 

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

 

15

930

940

950

960

970

 

0

 

920

Pin, INPUT POWER (WATTS)

Figure 2. Output Power versus Input Power (CW)

f, FREQUENCY (MHz)

Figure 3. Output Power versus Frequency (CW)

 

30

 

 

 

 

 

13

(WATTS)

25

 

 

 

 

(WATTS)

12

20

 

 

 

 

11

POWER

 

 

 

 

POWER

15

 

 

 

 

10

OUTPUT,

10

 

 

 

 

OUTPUT,

9.0

 

 

 

 

 

 

out

 

 

 

 

IQ = 50 mA

out

 

5.0

 

 

 

f = 960 MHz

8.0

P

 

 

 

P

 

 

 

 

 

 

 

 

 

 

 

Pin = 1, 6 W

 

 

 

0

 

 

 

 

 

7.0

 

18

20

22

24

 

26

0

 

 

VCE, SUPPLY VOLTAGE (VOLTS)

 

 

 

Figure 4. Output Power versus Supply Voltage (CW)

 

 

 

 

 

 

70%

 

 

 

 

 

 

 

60%

(%)

 

 

 

 

 

 

50%

EFFICIENCY

 

 

 

 

 

 

 

 

 

 

 

 

 

40%

COLLECTOR,η

 

 

 

 

 

IQ = 50 mA

20%

 

 

 

 

 

 

30%

 

 

 

 

 

 

f = 960 MHz

 

 

 

 

 

 

 

 

10%

 

5.0

10

15

20

25

30

35

 

Pout, OUTPUT POWER (WATTS)

Figure 5. Power Gain and Efficiency

versus Output Power

Gp, POWER GAIN (dB)

13

 

 

 

 

 

65%

(dBc)

0

 

 

12.5

 

 

 

 

 

 

 

VCE = 26 V

 

 

 

 

 

VCE = 26 V

(%)EFFICIENCYCOLLECTOR,η

DISTORTIONINTERMODULATION

±50

 

 

 

 

 

 

 

 

 

±10

ICQ = 50 mA

 

12

 

 

 

 

 

60%

 

 

 

 

 

 

 

 

 

 

f1 = 960 MHz

 

11.5

 

 

 

 

 

 

 

±20

f2 = 960, 1 MHz

 

 

 

 

 

 

 

 

 

 

 

11

 

 

 

 

 

55%

 

±30

 

 

10.5

 

 

 

 

 

 

 

±40

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

50%

 

 

 

 

9.5

 

 

 

 

IQ = 50 mA

 

IMD,

 

 

 

 

 

 

 

 

 

 

 

 

9.0

 

 

 

 

 

45%

±60

 

 

920

930

940

950

960

 

1.0

10

910

970

 

0.1

 

 

f, FREQUENCY (MHz)

 

 

 

 

Pout, OUTPUT POWER (WATTS) PEP

 

Figure 6. Typical Broadband Performances

Figure 7. Intermodulation Distortion

 

versus Output Power

MOTOROLA RF DEVICE DATA

MRF6409

 

3

f = 980 MHz

Zin

920

Zo = 10 Ω

f

Zin

ZOL*

(MHz)

(Ω)

(Ω)

 

 

 

920

1.4 + j3.0

3.2 ± j2.5

 

 

 

940

1.5 + j3.9

3.5 ± j1.88

 

 

 

960

1.5 + j4.2

3.9 ± j2.5

 

 

 

980

1.6 + j4.4

4.0 ± j2.8

 

 

 

920

f = 980 MHz

 

ZOL*

ZOL*: Conjugate of optimum load impedance into which the device operates at a given output power, voltage, current and frequency.

Figure 8. Input and Output Impedances with Circuit Tuned for Maximum Gain @ VCC = 26 V, ICQ = 50 mA, Pout = 20 W (CW)

MRF6409

MOTOROLA RF DEVICE DATA

4

 

Figure 9. 960 MHz Test Circuit RF, Photomaster Scale 1:1 (Reduced 25% in printed data book, DL110/D)

C6

C7

C8

C9

B2

C10

C11

 

 

 

B

 

 

 

 

 

 

 

 

 

 

 

R2

 

 

 

 

R1

 

 

 

 

 

 

 

 

 

C3

 

C5

 

 

 

 

 

 

 

B1

 

 

 

 

 

 

 

 

C1

 

 

 

 

 

 

 

C2

C4

 

 

Figure 10. 960 MHz Test Circuit RF, Photomaster Scale 1:1

and Components Location (Reduced 25% in printed data book, DL110/D)

MOTOROLA RF DEVICE DATA

MRF6409

 

5

 

 

PACKAGE DIMENSIONS

 

 

 

 

 

 

 

 

 

-A-

 

Q 2 PL

 

 

 

 

 

 

 

 

 

 

 

 

 

IDENTIFICATION

L

 

 

 

0.15 (0.006) M

T

A

M

N

M

NOTES:

 

 

 

 

NOTCH

 

 

 

 

 

 

 

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER

6

5

4

 

 

 

 

 

 

 

 

 

 

 

ANSI Y14.5M, 1982.

 

 

 

 

 

 

 

 

 

 

 

 

 

2. CONTROLLING DIMENSION: INCH.

 

 

 

 

 

 

-N-

 

 

 

 

 

 

 

 

 

INCHES

MILLIMETER

 

 

 

 

 

 

 

 

 

 

 

 

 

DIM

MIN

MAX

MIN

MAX

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

0.965

0.985

24.52

25.01

1

2

3

K

 

 

 

 

 

 

 

 

 

 

B

0.355

0.375

9.02

9.52

 

 

 

 

 

 

 

 

 

 

C

0.230

0.260

5.85

6.60

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

0.115

0.125

2.93

3.17

F

 

 

 

 

 

 

 

 

 

 

 

 

 

E

0.102

0.114

2.59

2.90

 

 

 

 

 

 

 

 

 

 

 

 

 

F

0.075

0.085

1.91

2.15

 

 

D 2 PL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

H

0.160

0.170

4.07

4.31

 

 

0.38 (0.015) M

T

A

M

N

M

 

 

 

 

 

 

J

0.004

0.006

0.11

0.15

 

 

 

 

 

 

 

 

K

0.090

0.110

2.29

2.79

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L

0.725 BSC

18.42 BSC

 

B

0.38 (0.015) M

T

A

M

N

M

 

 

 

 

 

N

0.225

0.241

5.72

6.12

 

 

 

 

 

 

Q

0.125

0.135

3.18

3.42

J

 

 

 

 

 

 

 

 

 

 

 

 

 

STYLE 2:

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PIN 1. EMITTER (COMMON)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2. BASE (INPUT)

 

 

H

 

 

 

 

C

 

 

 

 

 

 

 

 

 

3. EMITTER (COMMON)

 

 

 

E

 

 

 

 

 

 

 

 

 

 

4. EMITTER (COMMON)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5. COLLECTOR (OUTPUT)

 

 

 

 

 

 

 

-T-

 

SEATING

 

 

 

 

 

 

6. EMITTER (COMMON)

 

 

 

 

 

 

 

 

 

PLANE

 

 

 

 

 

 

 

 

 

 

CASE 319±07

ISSUE M

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

 

Mfax is a trademark of Motorola, Inc.

How to reach us:

 

USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, 6F Seibu±Butsuryu±Center,

P.O. Box 5405, Denver, Colorado 80217. 303±675±2140 or 1±800±441±2447

3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 81±3±3521±8315

Mfax : RMFAX0@email.sps.mot.com ± TOUCHTONE 602±244±6609

ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://sps.motorola.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

MRF6409

MRF6409/D

 

MOTOROLA RF DEVICE DATA

6

 

 

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