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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF15030/D

The RF Line
NPN	Silicon
RF	Power Transistor	MRF15030

Designed for 26 volts microwave large±signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400±1600 MHz.

•Specified 26 Volts, 1490 MHz, Class AB Characteristics: Output Power Ð 30 Watts

Gain Ð 9 dB Min @ 30 Watts (PEP) Efficiency Ð 30% Min @ 30 Watts (PEP)

Intermodulation Distortion Ð ±30 dBc Max @ 30 Watts (PEP)

•Third Order Intercept Point Ð 53.5 dBm Typ @ 1490 MHz, VCE = 24 Vdc, IC = 2.5 Adc

•Characterized with Series Equivalent Large±Signal Parameters from 1400±1600 MHz

•Characterized with Small Signal S±Parameters from 1000±2000 MHz

•Silicon Nitride Passivated

•100% Tested for Load Mismatch Stress at all Phase Angles with 3:1 Load VSWR @ 28 Vdc, at Rated Output Power

•Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

•Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

30 W, 1.5 GHz

RF POWER TRANSISTOR

NPN SILICON

CASE 395C±01, STYLE 1

Rating	Symbol	Value	Unit

Collector±Emitter Voltage	VCEO	25	Vdc
Collector±Emitter Voltage	VCES	60	Vdc
Emitter±Base Voltage	VEBO	4	Vdc
Collector±Current Ð Continuous	IC	10	Adc
Total Device Dissipation @ TC = 25°C	PD	125	Watts
Derate above 25°C		0.71	W/°C

Storage Temperature Range	Tstg	± 65 to +150	°C
THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	1.40	°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Breakdown Voltage	V(BR)CEO	25	29	Ð	Vdc
(IC = 50 mAdc, IB = 0)
Collector±Emitter Breakdown Voltage	V(BR)CES	60	64	Ð	Vdc
(IC = 50 mAdc, VBE = 0)
Collector±Emitter Breakdown Voltage	V(BR)CER	30	52	Ð	Vdc
(IC = 50 mAdc, RBE = 100 Ω)
					(continued)
REV 7

MOTOROLAMotorola, Inc. 1994RF DEVICE DATA

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted.)

Characteristic	Symbol	Min		Typ	Max	Unit

OFF CHARACTERISTICS Ð continued

Emitter±Base Breakdown Voltage	V(BR)EBO	4		5	Ð	Vdc
(IE = 5 mAdc, IC = 0)
Collector Cutoff Current	ICES	Ð		Ð	10	mAdc
(VCE = 30 Vdc, VBE = 0)
ON CHARACTERISTICS

DC Current Gain	hFE	20		35	80	Ð
(ICE = 1 Adc, VCE = 5 Vdc)
DYNAMIC CHARACTERISTICS

Output Capacitance	Cob	Ð		38	Ð	pF
(VCB = 26 Vdc, IE = 0, f = 1 MHz)
FUNCTIONAL TESTS (Figure 12)

Common±Emitter Amplifier Power Gain	Gpe	9.0		9.6	Ð	dB
(VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
Collector Efficiency	η	30		34	Ð	%
(VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
Intermodulation Distortion	IMD	Ð		± 34	± 30	dBc
(VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
Input Return Loss	IRL	12		15	Ð	dB
(VCC = 26 Vdc, Pout = 30 W (PEP), ICQ = 125 mA,
f1 = 1490 MHz, f2 = 1490.1 MHz)
Load Mismatch	ψ
(VCC = 28 Vdc, Pout = 30 W (PEP), ICQ = 125 mA,			No Degradation in Output Power
f1 = 1490 MHz, f2 = 1490.1 MHz, Load VSWR = 3:1, All Phase			No Degradation in Output Power
f1 = 1490 MHz, f2 = 1490.1 MHz, Load VSWR = 3:1, All Phase
Angles at Frequency of Test)

TYPICAL CHARACTERISTICS

	45						10.3				40
(WATTS)	40	Gpe					10.2			(WATTS)	35								Pin = 3.5 W
		Gpe				Pout					35
	35					Pout	10.1				30
	35						10.1

	30						10.0												2.5 W
POWER	30						10.0			POWER	25								2.5 W
								GAIN(dB)			25
	25						9.9				20
	20						9.8				20
	20						9.8												1.5 W
OUTPUT								,		OUTPUT	15								1.5 W
								,
	15						9.7		pe
									pe
								G
								G										VCC = 26 Vdc
,		V		= 26 Vdc						,	10
out 10		V	CC	= 26 Vdc			9.6			out	10
out 10			CC				9.6			out								ICQ = 125 mA
P		ICQ = 125 mA								P	5							ICQ = 125 mA
	5	f = 1490 MHz Single Tone					9.5				5							Single Tone
	0	1	2		3	4	9.4				0	1420	1440	1460	1480	1500	1520	1540	1560	1580	1600
	0	1	2		3	4	5				1400	1420	1440	1460	1480	1500	1520	1540	1560	1580	1600

Pin, INPUT POWER (WATTS)	f, FREQUENCY (MHz)
Figure 1. Output Power & Power Gain versus Input Power	Figure 2. Output Power versus Frequency

MRF15030	MOTOROLA RF DEVICE DATA
2

									TYPICAL CHARACTERISTICS
DISTORTION (dBc)	± 20											12								60
												11			Gpe						η , COLLECTOR EFFICIENCY (%)
												10			Gpe					50
									3rd Order			10								50
									3rd Order		GAIN (dB)	9
	± 30											9
												8				η				40
									5th			7				η
									5th			7
IMD,INTERMODULATION	± 40										, POWER	6								30	1.75
									7th			5		VCC = 26 Vdc
												4								20	1.50	INPUT VSWR
											pe	4								20	1.50
						V	CC		= 26 Vdc		pe			Pout = 30 W (PEP)
	± 50					V			= 26 Vdc		G	3		Pout = 30 W (PEP)
	± 50					I						3		ICQ = 125 mA
						I		= 125 mA						ICQ = 125 mA
						CQ						2								10	1.25
						f1 = 1490 MHz						2						VSWR		10	1.25
						f1 = 1490 MHz						1						VSWR
						f2 = 1490.1 MHz						1								0	1.00
	± 60	5	10	15	20	25	30		35	40		0	1460	1470	1480	1490	1500	1510	1520	0	1.00
	0	5	10	15	20	25	30		35	40		1450	1460	1470	1480	1490	1500	1510	1520	1530
			Pout, OUTPUT POWER (WATTS) PEP												f, FREQUENCY (MHz)

Figure 3. Intermodulation Distortion

Figure 4. Performance in Broadband Circuit

versus Output Power

(dBc)	± 25
(dBc)
DISTORTION	± 30
	± 35	ICQ = 75 mA

INTERMODULATION	± 40
	± 45	125 mA
	± 45
				VCC = 26 Vdc
	± 50	250 mA		f1 = 1490 MHz
IMD,		400 mA		f2 = 1490.1 MHz
IMD,	± 55

		0.10	1.0	10	100
	0.01	0.10	1.0	10	100

Pout, OUTPUT POWER (WATTS) PEP

Figure 5. Intermodulation Distortion

versus Output Power

	10
	9	ICQ = 400 mA
(dB)	8	250 mA
GAIN	8	250 mA
GAIN
POWER	7
POWER	6	125 mA		VCC = 26 Vdc
,				f1 = 1490 MHz
pe				f1 = 1490 MHz
G		75 mA		f2 = 1490.1 MHz
	5	75 mA
	5
	4	0.10	1.0	10	100
	0.01	0.10	1.0	10	100

Pout, OUTPUT POWER (WATTS) PEP

Figure 6. Power Gain versus Output Power

	11					± 25	(dBc)		60
(dB)GAINPOWER,					IMD		(dBc)	POWER(dBm)	50		Third Order
(dB)GAINPOWER,	10.5				IMD		DISTORTION	POWER(dBm)	40		Third Order
									40	Fundamental
	10					± 30			30
	10					± 30			20
				Gain			INTERMODULATION		20
G	8.5			Gain	ICQ = 125 mA			P	± 20					f2 = 1490.1 MHz
G	8.5				ICQ = 125 mA			P	± 20					f2 = 1490.1 MHz
pe	9.5							OUTPUT,	10
pe								OUTPUT,	0					VCC = 24 Vdc
	9					± 35			±10					IC = 2.5 A
					P = 30 W (PEP)				±10					f1 = 1490 MHz
					out			out
					f1 = 1490 MHz		IMD,		± 30
	8				f2 = 1490.1 MHz	± 40	IMD,		± 40
	8	20	22	24	26	± 40			± 40	15	20	25	30	35	40	45	50
	18	20	22	24	26	28			10	15	20	25	30	35	40	45	50
			VCE, COLLECTOR VOLTAGE (Vdc)									Pin, INPUT POWER (dBm)

Figure 7. Power Gain and Intermodulation

Figure 8. Class A Third Order Intercept Point

Distortion versus Collector Voltage

MOTOROLA RF DEVICE DATA	MRF15030
	3

						TYPICAL CHARACTERISTICS
	3								109
CURRENT (Adc)			MTBF Limited			Tflange = 75° C		)
	2.5		MTBF Limited			Tflange = 75° C		2
	2.5							x AMPS	108
									108
	2				Tflange = 100°C				107
									107
,COLLECTOR	1.5						BreakdownLimited	MTBF FACTOR(HOURS
	1								106
	1
			TJ = 175°C
C			TJ = 175°C						105
I	0.5								105
	0.5
	0	4	8	12	16	20	24	28	104	120	140	160	180	200	220	240	260
	0	4	8	12	16	20	24	28	100	120	140	160	180	200	220	240	260
			VCE, COLLECTOR VOLTAGE (Vdc)								TJ, JUNCTION TEMPERATURE (°C)

Figure 9. DC Safe Operating Area

Figure 10. MTBF Factor versus

Junction Temperature

The above graph displays calculated MTBF in hours x ampere2 emitter current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure.

Divide MTBF Factor by IC2 for MTBF in a particular application.

		1.5	1.55
		1.5	f = 1.6 GHz
			f = 1.6 GHz
		1.4	1.45
		1.4
			Zin
ZOL*			Zo = 10 Ω
f = 1.6 GHz	1.5	1.4
f = 1.6 GHz
1.55	1.45
1.55	1.45

f	Zin	Z*OL
(GHz)	(Ω)	(Ω)

1.40	1.15 + j4.25	1.87 + j0.78

1.45	1.15 + j4.55	1.67 + j0.78

1.50	1.20 + j4.80	1.47 + j0.78

1.55	1.45 + j5.15	1.27 + j0.78

1.60	1.89 + j5.25	1.00 + j0.78

Z*OL = Conjugate of optimum load impedance into which the device operates at a given output power, voltage and frequency.

Figure 11. Input and Output Impedances with Circuit Tuned for Maximum Gain @ Pout = 30 Watts (PEP), VCC = 26 Volts, ICQ = 125 mA, and Driven by Two Equal Amplitude Tones with Separation of 100 KHz

MRF15030	MOTOROLA RF DEVICE DATA
4

Table 1. Small Signal S Parameters at VCE = 24 Vdc, IC = 2.5 Adc

		f							S11										S21								S12											S22
	MHz					\|S11\|						f					\|S21\|				f					\|S12\|				f					\|S22\|					f
1000						0.983				173					0.366					49				0.006					36				0.890						178
1050						0.984				172					0.367					46				0.007					33				0.893						178
1100						0.978				172					0.367					43				0.007					33				0.888						178
1150						0.975				171					0.373					40				0.007					30				0.885						178
1200						0.975				171					0.382					36				0.008					31				0.886						177
1250						0.969				170					0.391					33				0.007					27				0.881						177
1300						0.963				169					0.408					29				0.008					21				0.879						177
1350						0.955				169					0.428					25				0.009					20				0.879						177
1400						0.945				168					0.452					20				0.008					7				0.873						177
1450						0.933				167					0.487					13				0.009					1				0.875						178
1500						0.915				166					0.525					6				0.009					± 8				0.875						178
1550						0.889				166					0.572					± 3				0.009					±18				0.877						178
1600						0.856				166					0.618					±16				0.009					± 35				0.887						178
1650						0.833				168					0.654					± 30				0.010					± 54				0.901						178
1700						0.820				171					0.654					± 48				0.010					± 86				0.918						178
1750						0.839				174					0.600					± 66				0.010					±120				0.930						177
1800						0.872				175					0.517					± 81				0.010					±152				0.932						176
1850						0.909				176					0.435					± 94				0.010					±176				0.925						174
1900						0.937				175					0.357					±104				0.011					159				0.924						173
1950						0.957				174					0.296					±112				0.012					148				0.917						173
2000						0.970				173					0.247					±119				0.012					136				0.915						173

Vbias																		R4
																									R5

	R1				Q2						R3										Q3
	R1																				Q3
	D1																																				R6
																																					R6
Q1			+										B2									D2																			VCC
													B2									D2

				C2	C3			R2			B1 C5					C7
				C2	C3			R2			B1 C5					C7																B3					B4 +
																																				C11
														L1																						C11		C13		C14
														L1															C10			L2						C13		C14
RF Input																							DUT																	RF Output



	N1																																								N2


				C1			C4					C6																C8			C9			C12

B1, B4	Long Bead, Fair Rite	D1	Surface Mount Diode, Motorola
B2, B3	Short Bead, Fair Rite	D2	Light Emitting Diode, Industrial Devices
C1	0.3 pF, B Case Chip Capacitor, ATC	L1, L2	3 Turn, 20 AWG, 0.126″ ID Choke
C2	220 mF, Electrolytic Capacitor, Mallory	N1, N2	Type N Flange Mount RF Connector, Omni Spectra
C3, C14	0.1 mF, Chip Capacitor, Kemit	Q1	Transistor PNP Motorola (BD136)
C4, C8	0.8 to 8 pF, Variable Capacitor, Johanson	Q2, Q3	Surface Mount Transistor, NPN, Motorola (MJD47)
C5, C11	1800 pF, Chip Capacitor, Kemit	R1	2 x 330 W, 1/8 Watt Chip Resistors in Parallel, Rohm
C6, C12	18 pF, B Case Chip Capacitor, ATC	R2	100 W, 1/8 Watt, Chip Resistor, Rohm
C7, C10	51 pF, Chip Capacitor, Murata Erie	R3, R6	4 x 38 W, 1/8 Watt, Chip Resistors in Parallel, Rohm
C9	1.7 pF, B Case Chip Capacitor, ATC	R4	39 W, 1/8 Watt, Chip Resistor, Rohm
C13	470 mF, Electrolytic Capacitor, Mallory	R5	22 KW, 1/8 Watt, Chip Resistor, Rohm
		Board	Glass Teflon , Arlon GX±0300±55±22, er = 2.55

Figure 12. Class AB Broadband Test Fixture Electrical Schematic

MOTOROLA RF DEVICE DATA	MRF15030
	5

V Supply
		R5	+
R1		R5	C1
R1
		Q1	VCC
R2			VCC
		Q2
		R6
			R9					R10
R3	R4	R7	R8		B2
					B2
		+	B1	C6	C8			VCC
		C2	C3	C6		B3		B4 + C13 C14
					L1		L2	C11
							L2
RF Input						C10		RF Output
RF Input					DUT			RF Output
N1					DUT			N2
			C4	C5				C12
			C4		C7	C9
					C7	C9

B1, B4	Long Bead, Fair Rite	Q1	Transistor NPN Motorola (BD135)
B2, B3	Short Bead, Fair Rite	Q2	Transistor PNP Motorola (BD136)
C1, C2	100 mF, Electrolytic Capacitor, Mallory	R1	250 W, 1/8 Watt, Chip Resistor Rohm
C3, C14	0.1 mF, Chip Capacitor, Kemit	R2	500 W, 1/4 Watt Potentiometer, State of the Art
C4	1.3 pF, B Case Chip Capacitor, ATC	R3	4.7 KW, 1/8 Watt, Chip Resistor, Rohm
C5, C12	18 pF, B Case Chip Capacitor, ATC	R4	2 x 4.7 KW, 1/8 Watt, Chip Resistors in Parallel, Rohm
C6, C11	1800 pF, Chip Capacitor, Kemit	R5	1.0 W, 10 Watt, Resistor, Dale
C7, C9	0.8 to 8 pF, Variable Capacitor, Johanson	R6	38 W, 1.0 Watt, Resistor
C8, C10	51 pF, Chip Capacitor, Murata Erie	R7	75 W, 1/8 Watt, Chip Resistor, Rohm
C13	470 mF, Electrolytic Capacitor, Mallory	R8	2 x 10 W, 1/8 Watt, Chip Resistors in Parallel, Rohm
L1, L2	3 Turn, 20 AWG, 0.126″ ID Choke	R9, R10	4 x 38 W, 1/8 Watt, Chip Resistors in Parallel, Rohm
N1, N2	Type N Flange Mount RF Connector, Omni Spectra	Board	Glass Teflon , Arlon GX±0300±55±22, er = 2.55

Figure 13. Class A Test Fixture Electrical Schematic

MRF15030	MOTOROLA RF DEVICE DATA
6

PACKAGE DIMENSIONS

	±A±
	U	Q 2 PL
		Q 2 PL
1		0.51 (0.020) M T A M B M

±B±

STYLE 1:

D PIN 1. BASE

2. COLLECTOR

3. EMITTER

N	E
J
H	C
H

±T± SEATING PLANE

CASE 395C±01

ISSUE A

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.739	0.750	18.77	19.05
B	0.240	0.260	6.10	6.60
C	0.165	0.198	4.19	5.03
D	0.215	0.225	5.46	5.72
E	0.055	0.070	1.40	1.78
H	0.079	0.091	2.01	2.31
J	0.004	0.006	0.10	0.15
K	0.210	0.240	5.33	6.10
N	0.315	0.330	8.00	8.38
Q	0.125	0.135	3.18	3.42
U	0.560 BSC		14.23 BSC

MOTOROLA RF DEVICE DATA	MRF15030
	7

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊	MRF15030/D
	MOTOROLA RF DEVICE DATA
	MRF15030/D

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