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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF426/D

The RF Line

NPN Silicon

RF Power Transistor

. . . designed for high gain driver and output linear amplifier stages in 1.5 to 30 MHz HF/SSB equipment.

Specified 28 Volt, 30 MHz Characteristics Ð Output Power = 25 W (PEP)

Minimum Gain = 22 dB Efficiency = 35%

Intermodulation Distortion @ 25 W (PEP) Ð IMD = ±30 dB (Max)

100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR

Class A and AB Characterization

BLX 13 Equivalent

MAXIMUM RATINGS

MRF426

25 W (PEP), 30 MHz

RF POWER

TRANSISTOR

NPN SILICON

CASE 211±07, STYLE 1

Rating

 

Symbol

 

Value

Unit

 

 

 

 

 

 

 

Collector±Emitter Voltage

 

VCEO

 

35

Vdc

Collector±Base Voltage

 

VCBO

 

65

Vdc

Emitter±Base Voltage

 

VEBO

 

4.0

Vdc

Collector Current Ð Continuous

 

IC

 

3.0

Adc

Withstand Current Ð 5 s

 

Ð

 

6.0

Adc

 

 

 

 

 

 

 

Total Device Dissipation @ TC = 25°C (1)

 

PD

 

70

Watts

Derate above 25°C

 

 

 

0.4

W/°C

 

 

 

 

 

 

Storage Temperature Range

 

Tstg

± 65 to +150

°C

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

Symbol

 

Max

Unit

 

 

 

 

 

 

 

Thermal Resistance, Junction to Case

 

RθJC

 

2.5

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

Min

Typ

 

Max

Unit

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector±Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0)

V(BR)CEO

35

Ð

 

Ð

Vdc

Collector±Base Breakdown Voltage (IC = 50 mAdc, IE = 0)

V(BR)CBO

65

Ð

 

Ð

Vdc

Emitter±Base Breakdown Voltage (IE = 10 mAdc, IC = 0)

V(BR)EBO

4.0

Ð

 

Ð

Vdc

Collector Cutoff Current (VCE = 28 Vdc, VBE = 0)

ICES

Ð

Ð

 

10

mAdc

NOTE:

 

 

 

 

 

(continued)

1.This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.

Motorola, Inc. 1994

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

ON CHARACTERISTICS

DC Current Gain

hFE

10

 

35

Ð

 

Ð

(IC = 1.0 Adc, VCE = 5.0 Vdc)

 

 

 

 

 

 

 

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Output Capacitance

Cob

Ð

 

60

80

 

pF

(VCB = 30 Vdc, IE = 0, f = 1.0 MHz)

 

 

 

 

 

 

 

FUNCTIONAL TESTS (SSB)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common±Emitter Amplifier Gain

GPE

22

 

25

Ð

 

dB

(VCC = 28 Vdc, Pout = 25 W (PEP), f1 = 30 MHz,

 

 

 

 

 

 

 

f2 = 30.001 MHz, ICQ = 25 mA)

 

 

 

 

 

 

 

Collector Efficiency

h

35

 

Ð

Ð

 

%

(VCC = 28 Vdc, Pout = 25 W (PEP), f1 = 30 MHz,

 

 

 

 

 

 

 

f2 = 30.001 MHz, ICQ = 25 mA)

 

 

 

 

 

 

 

Intermodulation Distortion (2)

IMD(d3)

Ð

 

± 35

± 30

 

dB

(VCC = 28 Vdc, Pout = 25 W (PEP), f1 = 30 MHz,

 

 

 

 

 

 

 

f2 = 30.001 MHz, ICQ = 25 mA)

 

 

 

 

 

 

 

Load Mismatch

y

 

 

 

 

 

 

(VCC = 28 Vdc, Pout = 25 W (PEP), f1 = 30 MHz,

 

 

No Degradation in Output Power

 

f2 = 30.001 MHz, ICQ = 25 mA, VSWR 30:1 at All Phase Angles)

 

 

 

 

 

 

 

CLASS A PERFORMANCE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Intermodulation Distortion (2) and Power Gain

GPE

Ð

 

23.5

Ð

 

dB

(VCC = 28 Vdc, Pout = 8.0 W (PEP), f1 = 30 MHz,

IMD(d3)

Ð

 

± 40

Ð

 

 

f2 = 30.001 MHz, ICQ = 1.2 Adc)

IMD(d5)

Ð

 

± 55

Ð

 

 

NOTE:

2. To Mil±Std±1311 Version A, Test Method 2204B, Two Tone, Reference each Tone.

 

 

 

C8

 

RFC2

 

 

 

 

+

 

 

 

 

 

RFC1

 

 

 

 

28 Vdc

BIAS

 

 

 

C9

±

INPUT

 

 

L3

 

 

 

 

 

 

 

 

 

 

C6

C7

CR1

 

 

 

 

 

L4

L2

C3

 

 

 

 

 

RF OUTPUT

 

 

 

 

 

RF

 

L1

 

 

C5

 

 

 

 

 

 

DUT

 

 

INPUT

 

 

C4

 

 

 

 

 

C1

 

 

 

 

 

 

 

 

 

 

C2

R1

 

 

 

C1, C2 Ð ARCO 469, 190± 780 pF

L1 Ð 3 Turns #16 0.25 ″

ID

C3, C4 Ð ARCO 464, 25± 280 pF

L2 Ð 6 Turns #16 0.5 ″ ID

C5 Ð 120 pF Dipped Mica

L3 Ð 7 Turns #20 0.38 ″

ID

C6, C7 Ð 100

mF, 15 Vdc

L4 Ð 10 mH Molded Choke Delevan

C8 Ð 680 pF F.T. Allen Bradley

RFC1 Ð Ferroxcube VK200/20±4B

C9 Ð 1.0 mF 35 V Tantalum

RFC2 Ð 3±Ferroxcube 5653065±3B

 

 

 

CR1 Ð 1N4997

RF Ð Input/Output Connectors UG53 A/ m

 

 

 

R1 Ð 10 W 1/2 Watt 10%

Adjust Bias (Base) for ICQ = 20 mA with No RF Applied

Figure 1. 30 MHz Linear Test Circuit

MRF426

MOTOROLA RF DEVICE DATA

2

 

 

50

 

 

 

 

 

 

 

40

 

 

 

 

 

 

 

 

f = 30 MHz

 

 

 

(WATTSPOWERPEP)

 

f = 30, 30.001 MHz

 

 

 

(WATTS)POWEROUTPUT

 

 

ICQ = 25 mA

 

 

 

 

 

 

 

40

 

 

 

 

 

ICQ = 25 mA

 

 

 

 

V

= 28 Vdc

 

 

 

30

 

 

 

 

 

 

CC

 

 

 

 

 

IMD(d3)

= ± 35 dB

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

 

 

 

out

 

 

 

 

 

 

 

OUTPUT,

20

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

10

 

 

 

 

 

P

10

 

 

 

 

 

 

out

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

P

 

 

 

 

 

 

 

0

0

20

40

60

80

100

 

016

 

20

24

28

32

 

 

 

 

Pin, INPUT POWER (mW)

 

 

 

 

 

VCC, SUPPLY VOLTAGE (VOLTS)

 

 

Figure 2. Output Power versus Input Power

Figure 3. Output Power versus Supply Voltage

 

40

 

 

 

 

 

 

 

 

(dB)

35

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

POWER GAIN

30

 

 

 

 

 

 

 

 

25

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PE

 

 

VCC = 28 V

 

 

 

 

 

 

G

 

 

ICQ = 25 mA

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

Pout = 25 W PEP

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

15

 

 

 

 

 

 

 

 

 

1.5

2

3

5

7

10

15

20

30

(dB)

± 25

 

 

 

 

 

 

 

DISTORTION

± 30

 

 

 

± 35

 

d3

 

INTERMODULATION

 

 

 

± 40

 

 

d5

 

 

 

± 45

 

 

f = 30, 30.001 MHz

 

 

ICQ = 25 mA

IMD,

 

 

 

VCC = 28 V

± 50

 

 

 

 

10

20

30

 

0

f, FREQUENCY (MHz)

Pout, OUTPUT POWER (WATTS PEP)

Figure 4. Power Gain versus Frequency

Figure 5. Intermodulation Distortion

 

versus Output Power

 

5

 

 

 

 

 

 

(AMP)

2.5

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

1

 

 

 

TC = 25°C

 

 

0.5

 

 

 

 

 

 

, COLLECTOR

 

 

 

 

 

 

0.25

 

 

 

 

 

 

0.1

 

 

 

 

 

 

C

 

 

 

 

 

 

I

 

 

 

 

 

 

 

0.05

2

5

10

20

50

100

 

1

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

 

Figure 6. DC Safe Operating Area

MOTOROLA RF DEVICE DATA

MRF426

 

3

 

2500

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

VCC = 28 V

 

2000

 

 

 

 

 

ICQ = 25 mA

 

 

 

 

 

 

Pout = 25 W PEP

 

 

 

 

 

 

 

 

PARALLELEQUIVALENT

1500

 

 

 

 

 

 

 

 

1000

 

 

 

 

 

 

 

 

CAPACITANCE(pF)

 

 

 

 

 

 

 

 

,

500

 

 

 

 

 

 

 

 

out

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

 

 

 

 

 

 

 

 

 

 

0

2

3

5

7

10

15

20

30

 

1.5

 

25

 

 

 

 

 

 

 

 

PARALLELEQUIVALENT OUTPUT

 

 

 

 

 

 

VCC = 28 V

 

 

 

 

 

 

 

ICQ = 25 mA

 

 

 

 

 

 

 

Pout = 25 W PEP

 

15

 

 

 

 

 

 

 

 

RESISTANCE(OHMS)

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

out

 

 

 

 

 

 

 

 

 

R

 

 

 

 

 

 

 

 

 

 

5

2

3

5

7

10

15

20

30

 

1.5

f, FREQUENCY (MHz)

f, FREQUENCY (MHz)

Figure 7. Output Capacitance versus Frequency

Figure 8. Output Resistance versus Frequency

1.0

0

1.0

 

2.0

 

2.0

3.0

1.0

3.0

 

 

4.0

30

 

4.0

 

 

2.0

 

 

 

 

 

 

 

 

5.0

3.0

 

 

5.0

 

15

 

 

 

 

 

 

 

 

 

6.0

4.0

VCC = 28 V

6.0

 

 

 

7.0

7.5

5.0

ICQ = 25 mA

7.0

Pout = 25 W PEP

 

8.0

 

6.0

f

Zin

8.0

4.0

7.0

MHz

Ohms

 

 

 

 

 

 

2.0

6.20 ± j6.65

 

9.0

 

8.0

9.0

 

4.0

4.65 ± j5.50

 

 

9.0

 

 

f = 2.0 MHz

7.5

3.25 ± j4.05

 

10.0

10.0

10.0

 

15

2.45 ± j2.90

 

 

 

 

 

 

12.0

30

1.4 ± j0.77

 

12.0

Zo = 10 Ω

14.0

 

 

12.0

 

 

 

 

 

16.0

 

 

 

14.0

 

18.0

 

 

14.0

 

20.0

 

 

 

 

 

 

 

Figure 9. Series Equivalent Input Impedance

MRF426

MOTOROLA RF DEVICE DATA

4

 

PACKAGE DIMENSIONS

Q

1

2

S K

A

 

 

 

 

 

 

U

 

NOTES:

 

 

 

 

M

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

Y14.5M, 1982.

 

 

 

M

 

2. CONTROLLING DIMENSION: INCH.

 

 

 

INCHES

MILLIMETERS

 

 

 

4

 

DIM

MIN

MAX

MIN

MAX

 

A

0.960

0.990

24.39

25.14

 

B

R

B

0.370

0.390

9.40

9.90

 

 

C

0.229

0.281

5.82

7.13

 

 

D

0.215

0.235

5.47

5.96

3

 

E

0.085

0.105

2.16

2.66

 

H

0.150

0.108

3.81

4.57

 

 

D

 

J

0.004

0.006

0.11

0.15

 

K

0.395

0.405

10.04

10.28

 

 

M

40

50

40

50

 

 

Q

0.113

0.130

2.88

3.30

 

 

R

0.245

0.255

6.23

6.47

 

 

S

0.790

0.810

20.07

20.57

 

 

U

0.720

0.730

18.29

18.54

 

 

STYLE 1:

 

 

J

PIN 1.

EMITTER

 

 

2.

BASE

 

C

3.

EMITTER

H

4.

COLLECTOR

E

SEATING

 

 

 

PLANE

 

CASE 211±07

ISSUE N

MOTOROLA RF DEVICE DATA

MRF426

 

5

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:

USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.

EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.

ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

MRF426/D

 

*MRF426/D*

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