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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF587/D

The RF Line

NPN Silicon

High-Frequency Transistor

. . . designed for use in high±gain, low±noise, ultra±linear, tuned and wideband amplifiers. Ideal for use in CATV, MATV, and instrumentation applications.

• Low Noise Figure Ð

NF = 3.0 dB (Typ) @ f = 500 MHz, IC = 90 mA

• High Power Gain Ð

GU(max) = 16.5 dB (Typ) @ f = 500 MHz

•Ion Implanted

•All Gold Metal System

•High fT Ð 5.5 GHz

•Low Intermodulation Distortion:

TB3 = ±70 dB DIN = 125 dB μV

•Nichrome Emitter Ballast Resistors

MAXIMUM RATINGS

Rating	Symbol	Value	Unit

Collector±Emitter Voltage	VCEO	17	Vdc
Collector±Base Voltage	VCBO	34	Vdc
Emitter±Base Voltage	VEBO	2.5	Vdc
Collector Current Ð Continuous	IC	200	mAdc
Total Device Dissipation @ TC = 50°C	PD	5.0	Watts
Derate above TC = 50°C		33	mW/°C
Storage Temperature Range	Tstg	± 65 to +150	°C
Junction Temperature	TJ	200	°C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

MRF587

NF = 3.0 dB @ 0.5 GHz HIGH±FREQUENCY TRANSISTOR

NPN SILICON

CASE 244A±01, STYLE 1

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Breakdown Voltage	V(BR)CEO	17	Ð	Ð	Vdc
(IC = 5.0 mAdc, IB = 0)
Collector±Base Breakdown Voltage	V(BR)CBO	34	Ð	Ð	Vdc
(IC = 1.0 mAdc, IE = 0)
Emitter±Base Breakdown Voltage	V(BR)EBO	2.5	Ð	Ð	Vdc
(IC = 0, IE = 0.1 mAdc)
Collector Cutoff Current	ICBO	Ð	Ð	50	μAdc
(VCB = 10 Vdc, IE = 0)
ON CHARACTERISTICS

DC Current Gain (1)	hFE	50	Ð	200	Ð
(IC = 50 mAdc, VCE = 5.0 Vdc)
NOTE:					(continued)
1. 300 μs pulse on Tektronix 576 or equivalent.

REV 6

Motorola, Inc. 1994

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted.)

	Characteristic	Symbol	Min	Typ	Max	Unit


Current±Gain Ð Bandwidth Product (2)		fT	Ð	5.5	Ð	GHz
(IC = 90 mAdc, VCE = 15 Vdc, f = 0.5 GHz)
Collector±Base Capacitance		Ccb	Ð	1.7	2.2	pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
FUNCTIONAL TESTS

Narrowband Ð Figure 15						dB
(IC = 90 mA, VCC = 15 V, f = 0.5 GHz)
Noise Figure		NF	Ð	3.0	4.0
Power Gain at Optimum Noise Figure		GNF	11	13	Ð
Broadband Ð Figure 16						dB
(IC = 90 mA, VCC = 15 V, f = 0.3 GHz)
Noise Figure		NF	Ð	6.3	Ð
Power Gain at Optimum Noise Figure		GNF	Ð	11	Ð
Triple Beat Distortion		TB3	Ð	± 70	Ð	dB
(IC = 50 mA, VCC = 15 V, PRef = 50 dBmV)
(IC = 90 mA, VCC = 15 V, PRef = 50 dBmV)
DIN 45004		DIN	Ð	125	Ð	dBμV
(IC = 90 mA, VCC = 15 V)
(IC = 90 mA, VCC = 15 V)
Maximum Available Power Gain (3)		GUmax	Ð	16.5	Ð	dB
(IC = 90 mA, VCE = 15 Vdc, f = 0.5 GHz)
NOTES:
2. Characterized on HP8542 Automatic Network Analyzer
\|S	\|2
21
DYNAMIC CHARACTERISTICS

3. GUmax = (1 ±|S11|2)(1 ±|S22|2)

	10
	10
	9
(dB)	8
(dB)	7
FIGURE	6
	6
NOISE	5
NOISE	4
	4
NF,	3
NF,
	2
	1
	0
	0.1

				30		6
			VCE = 15 V	27	(dB)		VCE = 15 V
			VCE = 15 V				VCE = 15 V
			IC = 90 mA	24		5	f = 300 MHz
GNF				21	FIGURENOISEATGAIN	(dB)FIGURENOISENF,
GNF

				18		4
				15
				12		3
N.F.				9
N.F.					,
				6	NF	2
				3	G
				3
				0		1
0.2	0.3	0.5	0.7	0.9 10		0	50	100	150	200

f, FREQUENCY (GHz)	IC, COLLECTOR CURRENT (mA)
Figure 1. Typical Noise Figure and	Figure 2. Noise Figure versus Collector Current
Associated Gain versus Frequency

MRF587	MOTOROLA RF DEVICE DATA
2

(dB)	20	f = 500 MHz
GAIN		f = 500 MHz
GAIN		VCE = 15 V
POWER	16
POWER
AVAILABLE	12
AVAILABLE	8
, MAXIMUM	8
	4

Umax	0
G	0	50	100	150	200
	0	50	100	150	200

IC, COLLECTOR CURRENT (mA)

Figure 3. GUmax versus Collector Current

	6
(GHz)		VCE = 15 V
(GHz)	5
PRODUCT	5
PRODUCT	4
GAIN-BANDWIDTH	3
GAIN-BANDWIDTH	2			f = 1000 MHz
,
T
f
	1		100	150	200
	0	50	100	150	200

IC, COLLECTOR CURRENT (mA)

Figure 4. Gain±Bandwidth Product versus Collector Current

						TYPICAL PERFORMANCE
7										10
6										7
6
NOISENF,FIGURE (dB)						VCC = 15 V			CAPACITANCE(pF)	5			Ccb
NOISENF,FIGURE (dB)						VCC = 15 V			CAPACITANCE(pF)	2			Ccb
5						f = 300 MHz							Cob
										3
4
		CIRCUIT PER
		FIGURE 16
3
2	50	60	70	80	90	100	110	120		1	2	3	5	7	10
40	50	60	70	80	90	100	110	120		1	2	3	5	7	10
		IC, COLLECTOR CURRENT (mA)									VCB, COLLECTOR BASE VOLTAGE (V)

Figure 5. Broadband Noise Figure

Figure 6. Junction Capacitance versus Voltage

	80								31			60
(dBmV)									29	(dBm)	(dBm)
(dBmV)	76								27	(dBm)	(dBm)	50						3RD ORDER
																		3RD ORDER
																		INTERCEPT
									25									INTERCEPT
OUTPUT, VOLTAGE									25	OUTPUT, POWER	OUTPUT, POWER							f1 = 205 MHz
OUTPUT, VOLTAGE	72								17	OUTPUT, POWER	OUTPUT, POWER							f1 = 205 MHz
							VCC = 15 V		21				+1 dB				CIRCUIT PER
							f = 200 MHz		21				COMP. PT.				FIGURE 16
	68						f = 200 MHz		19			30	COMP. PT.				FIGURE 16
	68		CIRCUIT PER						19			30
			CIRCUIT PER							out	out
out	64		FIGURE 16						15	out	out	20						f2 = 211 MHz
V	64								15	P	P	20						VCC = 15 V
									13									VCC = 15 V
	60								13									IC = 90 mA
	60	50	60	70	80	90	100	110	11			10	10	20	30	40	50	60	70	80
	40	50	60	70	80	90	100	110	120			0	10	20	30	40	50	60	70	80
			IC, COLLECTOR CURRENT (mA)												Pin, INPUT POWER (dBm)

Figure 7. 1.0 dB Compression Point versus

Figure 8. Third Order Intercept Point

Collector Current

MOTOROLA RF DEVICE DATA	MRF587
	3

TYPICAL PERFORMANCE (continued)

	± 48
		VCE = 15 V
	± 52	PRef = 50 dBmV						CHR
	± 52			CIRCUIT PER				CHR
(dB)				CIRCUIT PER
(dB)				FIGURE 16				CH13
IMD, DISTORTION	± 56			TEST PER FIGURE 17				CH13
				TEST PER FIGURE 17
	± 60
	± 64
	± 64
								CH2
	40	50	60	70	80	90	100	110	120

	± 60
			VCC = 15 V
	± 64		PRef = 50 dBmV @ 200 MHz
	± 64				CIRCUIT PER
					CIRCUIT PER
(dB)					FIGURE 16
(dB)	± 68
, DISTORTION	± 68
	± 72

3
TB	± 76		TEST PER FIGURE 18
	± 76		TEST PER FIGURE 18
	± 80	80	90	100	110	120
	70	80	90	100	110	120

IC, COLLECTOR CURRENT (mA)	IC, COLLECTOR CURRENT (mA)
Figure 9. Second Order Distortion versus	Figure 10. Triple Beat Distortion versus
Collector Current	Collector Current

	± 10									140
						VCC = 15 V			μV)			VCC = 15 V
	± 20					VCC = 15 V			μV)	130
DISTORTION(dB)	± 20					PRef = 50 dBmV			VOLTAGE(dB	130
						PRef = 50 dBmV
	± 30									120
	± 30									120
35						CH13			OUTPUT
35	± 40	CIRCUIT PER							OUTPUT	110					CIRCUIT PER
,		CIRCUIT PER													CIRCUIT PER
,		FIGURE 16													FIGURE 16
XMD	± 50	FIGURE 16							Ref	100					FIGURE 16
XMD	± 50	TEST PER FIGURE 19							Ref	100					TEST PER FIGURE 20
		TEST PER FIGURE 19							,						TEST PER FIGURE 20
									V
	± 60							110	120	90				80	90	100	110	120
	40	50	60	70	80	90	100	110	120	40	50	60	70	80	90	100	110	120
			IC, COLLECTOR CURRENT (mA)									IC, COLLECTOR CURRENT (mA)

Figure 11. 35±Channel X±Modulation Distortion

Figure 12. DIN 45004B versus Collector Current

versus Collector Current

MRF587	MOTOROLA RF DEVICE DATA
4

			+ j50				VCE = 15 V	IC = 90 mA				90°
							VCE = 15 V	IC = 90 mA		°					60°
	+ j25					+ j100				120	f = 0.1 GHz
											f = 0.1 GHz

							+ j150	150°			S21	0.2					30°
																	30°
													0.8
+ j10							+ j250						0.8	1
+ j10												0.4
													0.6
																S12
							+ j500					0.6				S12
	1						+ j500					1	0.4
S11	1							180° 25				1	f = 0.1 GHz				0.5 0°
S11	10 0.8	25	50	100	150	250	500	180° 25	20	15	10	5	0.1	0.2	0.3	0.4	0.5 0°
0	0.6
	0.6
	0.4	0.6	0.4				± j500
	0.2	0.6	0.2	f = 0.1 GHz			± j250
± j10	f = 0.1 GHz		0.8	f = 0.1 GHz			± j250	°									± 30°
			1					±150
				S22			± j150
				S22
	± j25					± j100				±120°					± 60°
						± j100				±120°		± 90°


			± j50

Figure 13. Input/Output Reflection									Figure 14. Forward/Reverse Transmission
Coefficient versus Frequency (GHz)									Coefficients versus Frequency (GHz)

VCE	IC	f	S	11			S	21			S12			S22
(Volts)	(mA)	(MHz)	\|S11\|		± φ	\|S21\|		± φ		\|S12\|		± φ	\|S22\|		± φ
5.0	30	100	0.56		± 131	16.45		113		0.04		45	0.49		± 91
		200	0.58		± 159	9.42		98		0.06		49	0.38		± 116
		400	0.60		± 178	5.00		86		0.08		55	0.35		± 132
		600	0.64		170	3.61		76		0.11		56	0.38		± 138
		800	0.67		162	2.92		67		0.14		55	0.41		± 144
		1000	0.70		155	2.55		58		0.17		54	0.44		± 152

	60	100	0.53		± 141	17.89		110		0.04		50	0.47		± 102
		200	0.56		± 164	10.05		97		0.05		55	0.39		± 126
		400	0.59		178	5.31		85		0.09		60	0.38		± 141
		600	0.63		169	3.82		76		0.12		59	0.40		± 146
		800	0.66		161	3.09		67		0.15		57	0.44		± 153
		1000	0.69		155	2.67		58		0.18		55	0.47		± 160

	90	100	0.52		± 145	18.26		109		0.04		52	0.47		± 106
		200	0.56		± 166	10.20		96		0.05		57	0.39		± 130
		400	0.59		177	5.38		85		0.09		62	0.39		± 144
		600	0.63		168	3.86		76		0.12		60	0.41		± 149
		800	0.66		161	3.12		67		0.15		58	0.45		± 155
		1000	0.69		155	2.70		58		0.19		55	0.48		± 162

10	30	100	0.53		± 122	18.36		115		0.04		48	0.50		± 75
		200	0.53		± 153	10.63		100		0.05		51	0.36		± 96
		400	0.55		175	5.71		87		0.08		57	0.33		± 112
		600	0.59		173	4.16		78		0.10		58	0.35		± 119
		800	0.62		165	3.37		68		0.13		57	0.39		± 127
		1000	0.65		158	2.95		59		0.15		55	0.42		± 136

	60	100	0.49		± 132	20.19		112		0.03		51	0.46		± 85
		200	0.51		± 158	11.54		99		0.05		57	0.35		± 107
		400	0.53		± 178	6.12		87		0.08		61	0.33		± 123
		600	0.58		171	4.43		78		0.11		60	0.36		± 129
		800	0.60		164	3.58		68		0.14		59	0.40		± 136
		1000	0.63		157	3.12		60		0.16		57	0.44		± 144

	90	100	0.48		± 135	20.82		111		0.03		53	0.45		± 88
		200	0.50		± 160	11.77		98		0.05		59	0.34		± 111
		400	0.53		± 179	6.22		86		0.08		63	0.33		± 126
		600	0.57		171	4.50		78		0.11		62	0.36		± 131
		800	0.60		164	3.64		68		0.14		59	0.41		± 139
		1000	0.63		157	3.18		60		0.17		57	0.44		± 147
															(continued)
			Table 1. Common±Emitter S±Parameters

MOTOROLA RF DEVICE DATA															MRF587
														5

VCE	IC	f		S	11		S21			S12			S22
(Volts)	(mA)	(MHz)	\|S11\|		± f	\|S21\|		± f	\|S12\|		± f	\|S22\|		± f
15	30	100	0.49		± 112	20.34		118	0.04		54	0.51		± 52
		200	0.52		± 145	11.51		101	0.05		56	0.36		± 77
		400	0.48		± 164	6.12		87	0.09		63	0.32		± 74
		600	0.52		± 174	4.19		75	0.12		62	0.32		± 90
		800	0.53		177	3.29		68	0.16		61	0.38		± 90
		1000	0.53		168	2.76		61	0.20		56	0.47		± 90

	60	100	0.45		± 122	22.14		115	0.03		56	0.45		± 60
		200	0.49		± 150	12.24		99	0.05		60	0.33		± 86
		400	0.45		± 166	6.45		86	0.09		65	0.30		± 83
		600	0.50		± 175	4.42		75	0.13		63	0.32		± 99
		800	0.51		177	3.47		68	0.16		61	0.38		± 98
		1000	0.51		168	2.91		62	0.20		55	0.46		± 96

	90	100	0.44		± 127	22.76		114	0.03		58	0.43		± 62
		200	0.48		± 152	12.44		98	0.05		62	0.32		± 89
		400	0.44		± 167	6.55		85	0.09		66	0.29		± 85
		600	0.50		± 176	4.47		75	0.13		64	0.32		± 102
		800	0.51		176	3.51		69	0.17		61	0.38		± 100
		1000	0.51		168	2.95		62	0.20		55	0.46		± 98

Table 1. Common±Emitter S±Parameters (continued)

	R1
+	VBB
+	Y3
C5	C7
	TL3

TL1

RF
INPUT Y1	C1
	C1

3.12 cm

C10

RFC1

VCC

Y4 +

	TL4
	3.68 cm
	C9	C4
DUT	TL2
	TL2

	RF
C2	Y2 OUTPUT
C2


C1, C2			Ð 470 pF Chip (Ceramic)		R1 Ð 2.7 k W, 1±1/2 W
C3, C4 Ð 0.018 mF Chip Capacitor					RFC1 Ð 0.15 mH Molded Choke
C5, C6 Ð 0.1				mF Mylar	TL1, TL2 Ð Z o = 26 W, 0.0625 TFG as shown in
C7, C8			Ð 1.0	mF, 25 Vdc Electrolytic	TL1, TL2 Photomaster
C9	Ð 91 pF Mini±Unelco (C9 Taped 3.68 cm from				TL3, TL4 Ð l/4 Microstrip, Zo = 100 W
C9	Ð Collector Connection on TL4 as shown)				Y1, Y2	Ð N±Type Connection (Female)
C10		Ð 35± 45 pF Johanson Ceramic Capacitor, JMC			Y3, Y4	Ð BNC±Type Connector (Female)
C10		Ð	5801 or Equivalent (C10 Taped 3.12 cm from		Board Material Ð 0.0625 ″ Thick Glass Teflon er = 2.5
C10		Ð Base Connection on TL1)

Figure 15. Narrowband Test Fixture Schematic

500 MHz

MRF587	MOTOROLA RF DEVICE DATA
6

VBB	VCC
C4	C5

VCC = 15 V

Pg = 11 dB

f = 5 ± 375 MHz

Zo = 75 Ω

OUTPUT

		T2
C3	R3		C6
		DUT	C7
RF		T1
RF
INPUT
L1
	C2
C1		R1	C8
C1, C7 Ð 0.5± 10 pF		R1 Ð 12 Ω 1.0 W (2.0± 24 Ω on each emitter port)
C2, C6 Ð 0.001	μF	R2 Ð 1.8 k 1/8 W
C3 Ð 0.01 μF		R3 Ð 2.2 k 1/8 W
C4, C5 Ð 0.01	μF Feedthru	L1 Ð 1 Turn 0.012 dia #22 AWG
C8 Ð 12 pF		T1(1) Ð 5 Turns Tapped at 2 Turns, #30 AWG
		T2(1) Ð 8 Turns Tapped at 3 Turns, #30 AWG

(1) Ferroxcube 135 CT050 3D3 Material

Figure 16. Broadband Test Circuit Schematic

	PRef
			DISTORTION
f2 ± f1	f1	f2	f1 + f2

Figure 17. Second Order Distortion Test

	DISTORTION	UNMODULATED
	DISTORTION	CARRIER
	PRef	CARRIER
	PRef
		100%
		MODULATION
		15 kHz

Figure 19. Cross Modulation Distortion Test

PRef
	DISTORTION
f1	f2	f3

Figure 18. Triple Beat Distortion Test

VRef		± 6 dB
		± 6 dB
199 MHz	± 60 dB
	± 60 dB
	211 MHz	217 MHz
f1	f2	f3
193 MHz	205 MHz
	205 MHz

Figure 20. DIN 45004B Intermodulation Test

MOTOROLA RF DEVICE DATA	MRF587
	7

PACKAGE DIMENSIONS

		2		D
		2	1				MILLIMETERS		INCHES
		4	1

						DIM	MIN	MAX	MIN	MAX
		3				DIM	MIN	MAX	MIN	MAX
		3				A	7.06	7.26	0.278	0.286
			K			A	7.06	7.26	0.278	0.286
			K			B	6.20	6.50	0.244	0.256
			M			C	15.24	16.51	0.600	0.650
						D	0.66	0.86	0.026	0.034
						E	1.40	1.65	0.055	0.065
T		A				F	1.52	Ð	0.060	Ð
T		A	J			J	0.10	0.15	0.004	0.006
			J			K	11.17	Ð	0.440	Ð
						M	45° NOM		45° NOM
				S		P	Ð	1.27	Ð	0.050
				S		S	2.74	3.35	0.108	0.132
						S	2.74	3.35	0.108	0.132
F			SEATING		C	T	1.40	1.78	0.055	0.070
	P		PLANE		C	U	2.92	3.68	0.115	0.145
			PLANE			U	2.92	3.68	0.115	0.145

8±32 NC 2A
			STYLE 1:
WRENCH FLAT		E	PIN 1.	EMITTER
	B	U	2.	BASE
	B		3.	EMITTER
			4.	COLLECTOR

CASE 244A±01

ISSUE A

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

Literature Distribution Centers:

USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.

EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.

ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.

◊	MRF587/D
	MRF587/D

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