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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF1150MA/D

The RF Line

Microwave Pulse

Power Transistors

Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters.

•Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak

Minimum Gain = 7.8 dB

•100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR

•Industry Standard Package

•Nitride Passivated

•Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration

•Internal Input Matching for Broadband Operation

•Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating	Symbol	Value	Unit

Collector±Base Voltage	VCBO	70	Vdc
Emitter±Base Voltage	VEBO	4.0	Vdc
Collector Current Ð Peak (1)	IC	12	Adc
Total Device Dissipation @ TC = 25°C (1) (2)	PD	583	Watts
Derate above 25°C		3.33	W/°C

Storage Temperature Range	Tstg	± 65 to +150	°C

THERMAL CHARACTERISTICS

MRF1150MA

MRF1150MB

150 W PEAK, 960 ± 1215 MHz MICROWAVE POWER TRANSISTORS

NPN SILICON

CASE 332±04, STYLE 1 (MRF1150MA)

CASE 332A±03, STYLE 1 (MRF1150MB)

Characteristic		Symbol		Max		Unit

Thermal Resistance, Junction to Case (3)		RθJC		0.3		°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic	Symbol	Min	Typ		Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Breakdown Voltage	V(BR)CES	70	Ð		Ð	Vdc
(IC = 50 mAdc, VBE = 0)
Collector±Base Breakdown Voltage	V(BR)CBO	70	Ð		Ð	Vdc
(IC = 50 mAdc, IE = 0)
Emitter±Base Breakdown Voltage	V(BR)EBO	4.0	Ð		Ð	Vdc
(IE = 5.0 mAdc, IC = 0)
Collector Cutoff Current	ICBO	Ð	Ð		10	mAdc
(VCB = 50 Vdc, IE = 0)
ON CHARACTERISTICS

DC Current Gain (4)	hFE	10	30		Ð	Ð
(IC = 5.0 Adc, VCE = 5.0 Vdc)
NOTES:						(continued)

1.Pulse Width = 10 μs, Duty Cycle = 1%.

2.These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.

3.Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.

4.80 μs Pulse on Tektronix 576 or equivalent.

REV 8

MOTOROLAMotorola, Inc. 1997RF DEVICE DATA	MRF1150MA MRF1150MB
	1

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

DYNAMIC CHARACTERISTICS

Output Capacitance

Cob

(VCB = 50 Vdc, IE = 0, f = 1.0 MHz)

FUNCTIONAL TESTS (Pulse Width = 10 ms, Duty Cycle = 1.0%)

Common±Base Amplifier Power Gain

GPB

7.8

9.8

(VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz)

Collector Efficiency

(VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz)

Load Mismatch

(VCC = 50 Vdc, Pout = 150 W pk, f = 1090 MHz,

No Degradation in Power Output

VSWR = 10:1 All Phase Angles)

VCC = 50 Vdc

DUT

INPUT

OUTPUT

Z10

C1, C2 Ð 220 pF Chip Capacitor, 100±mil ATC

C3 Ð 0.1 mF/100 V

C4 Ð 47 mF/75 V Electrolytic

L1, L2 Ð 3 Turns #18 AWG, 1/8 ″ ID

Z1 ± Z10 Ð Distributed Microstrip Elements Ð See Photomaster

Board Material Ð 0.031 ″ Thick Teflon±Fiberglass, er = 2.5

Figure 1. 1090 MHz Test Circuit

	200
pk)		f = 960 MHz
(WATTS		f = 960 MHz
	150

OUTPUT POWER		1090 MHz
	100
	50			1215 MHz	VCC = 50 V
,
out

					tp = 10 ms
P					tp = 10 ms
					D = 1%
	0	5	10	15	20	25
	0	5	10	15	20	25

Pin, INPUT POWER (WATTS pk)

Figure 2. Output Power versus Input Power

	200				Pin = 20 W pk
					Pin = 20 W pk
pk)					17.5 W pk
(WATTS					17.5 W pk
	150

POWER	100				15 W pk
,OUTPUT					15 W pk
					12.5 W pk
	50	VCC	= 50 V
out	50

		tp = 10 ms
P		tp = 10 ms			10 W pk
		D = 1%
	0	960		1090	1215
		960		1090	1215
				f, FREQUENCY (MHz)

Figure 3. Output Power versus Frequency

MRF1150MA MRF1150MB	MOTOROLA RF DEVICE DATA
2

	200												14
pk)		f = 1090 MHz					Pin = 20 W pk							Po = 150 W pk
		tp	= 10 μs				Pin = 20 W pk						12	VCC = 50 V
						17.5 W pk
(WATTSPOWER
	150	D = 1%										(dB)GAINPOWER		tp = 10	μs
	150	D = 1%										(dB)GAINPOWER	8	tp = 10	μs
					15 W pk									D = 1%
					15 W pk
													10
OUTPUT	100
OUTPUT												G
												,
	50							12.5 W pk				PB
								12.5 W pk
,
out							10 W pk						6
P							10 W pk
	20	5	10	15	20	25	30	35	40	45	50		4	1090	1215
	0	5	10	15	20	25	30	35	40	45	50		960	1090	1215
				VCC, SUPPLY VOLTAGE (VOLTS)										f, FREQUENCY (MHz)

Figure 4. Output Power versus Supply Voltage

Figure 5. Power Gain versus Frequency

f = 960 MHz	5.0			Pout = 150 W pk		VCC = 50 V

ZOL*	1215	10			tp = 10 μs D = 1%
		f = 960 MHz		f	Zin	ZOL*

5.0 1090		Zin		MHz	Ohms	Ohms
			15	960	1.5 + j9.6	2.6 + j4.1
1215
				1090	5.0 + j7.5	2.7 + j4.6
	1090			1215	2.4 + j5.6	2.8 + j5.3

ZOL* = Conjugate of the optimum load impedance into which the device

10 output operates at a given output power, voltage, and frequency.

Figure 6. Series Equivalent Input/Output Impedance

Pout = 150 W pk

VCC = 50 V

tp = 10 μs

D = 1%

SCALE

2 μs/DIV

Figure 7. Typical Pulse Performance

MOTOROLA RF DEVICE DATA

MRF1150MA MRF1150MB

			PACKAGE DIMENSIONS
L
						NOTES:
M						1. DIMENSION K APPLIES TWO PLACES.
		4				2. DIMENSIONING AND TOLERANCING PER ANSI
		4				Y14.5M, 1973.
						Y14.5M, 1973.
K	1	3	D				MILLIMETERS		INCHES
						DIM	MIN	MAX	MIN	MAX
		2				A	6.86	7.62	0.270	0.300
						B	6.10	6.60	0.240	0.260
						C	16.26	16.76	0.640	0.660
				N		D	4.95	5.21	0.195	0.205
		A	J	N		E	1.40	1.65	0.055	0.065
H			J			F	2.67	4.32	0.105	0.170
H						H	1.40	1.65	0.055	0.065
F						J	0.08	0.18	0.003	0.007
F					±T±	K	15.24	±±±	0.600	±±±
						K	15.24	±±±	0.600	±±±
		U		C		L	2.41	2.67	0.095	0.105
		U		C	SEATING	M	45	NOM	45	NOM
					SEATING	M	45	NOM	45	NOM
8±32 UNC 2A					PLANE	N	4.97	6.22	0.180	0.245
8±32 UNC 2A						U	2.92	3.68	0.115	0.145
						U	2.92	3.68	0.115	0.145
E						STYLE 1:
		±B±				PIN 1. BASE
		±B±					2. EMITTER
							2. EMITTER
		0.76 (0.030) M		T	B M		3. BASE
		0.76 (0.030) M		T	B M		4. COLLECTOR
					CASE 332±04
					ISSUE D
					(MRF1150MA)

		4
K	1	3	D
K
		2
	H	A	J
	H		J
SEATING			C
SEATING
PLANE

CASE 332A±03

ISSUE D (MRF1150MB)

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.270	0.290	6.86	7.36
C	0.115	0.135	2.93	3.42
D	0.195	0.205	4.96	5.20
F	0.095	0.105	2.42	2.66
H	0.050	0.070	1.27	1.77
J	0.003	0.007	0.08	0.17
K	0.600	±±±	15.24	±±±

STYLE 1:

PIN 1. BASE

2.EMITTER

3.BASE

4.COLLECTOR

MRF1150MA MRF1150MB	MOTOROLA RF DEVICE DATA
4

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

	Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4±32±1,
P.O. Box 5405, Denver, Colorado 80217. 303±675±2140 or 1±800±441±2447	Nishi±Gotanda, Shinagawa±ku, Tokyo 141, Japan. 81±3±5487±8488
Mfax : RMFAX0@email.sps.mot.com ± TOUCHTONE 602±244±6609	ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

± US & Canada ONLY 1±800±774±1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

INTERNET: http://motorola.com/sps

MOTOROLA RF DEVICE DATA ◊	MRF1150MA MRF1150MA/D50MB
	5

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