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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF897R/D

The RF Line

NPN Silicon

RF Power Transistor

Designed for 24 Volt UHF large±signal, common emitter, class±AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800±970 MHz.

Specified 24 Volt, 900 MHz Characteristics Output Power = 30 Watts

Minimum Gain = 10.5 dB @ 900 MHz, class±AB Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP)

Maximum Intermodulation Distortion ±30 dBc @ 30 Watts (PEP)

Characterized with Series Equivalent Large±Signal Parameters from 800 to 960 MHz

Silicon Nitride Passivated

100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power

Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal± Migration

Circuit Board Photomaster Available by Ordering Document MRF897RPHT/D from Motorola Literature Distribution.

MAXIMUM RATINGS

MRF897R

30 W, 900 MHz RF POWER TRANSISTOR NPN SILICON

CASE 395B±01, STYLE 1

Rating

Symbol

Value

Unit

 

 

 

 

Collector±Emitter Voltage

VCEO

30

Vdc

Collector±Emitter Voltage

VCES

60

Vdc

Emitter±Base Voltage

VEBO

4.0

Vdc

Collector±Current Ð Continuous

IC

4.0

Adc

Total Device Dissipation @ TC = 25°C

PD

105

Watts

Derate above 25°C

 

0.60

W/°C

 

 

 

 

Storage Temperature Range

Tstg

± 65 to +150

°C

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

Characteristic

Symbol

Max

Unit

 

 

 

 

Thermal Resistance, Junction to Case

RθJC

1.67

°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

OFF CHARACTERISTICS

Collector±Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0)

V(BR)CEO

30

33

Ð

Vdc

Collector±Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)

V(BR)CES

60

80

Ð

Vdc

Emitter±Base Breakdown Voltage (IE = 5 mAdc, IC = 0)

V(BR)EBO

4.0

4.7

Ð

Vdc

Collector Cutoff Current (VCE = 30 Vdc, VBE = 0, TC = 25°C)

ICES

Ð

Ð

10.0

mAdc

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain (ICE = 1.0 Adc, VCE = 5 Vdc)

hFE

30

80

120

Ð

DYNAMIC CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz)

Cob

14

21

28

pF

(continued)

Motorola, Inc. 1995

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

 

Typ

Max

 

Unit

 

 

 

 

 

 

 

 

FUNCTIONAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Common±Emitter Amplifier Power Gain

Gpe

10.5

 

12.0

Ð

 

dB

(VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,

 

 

 

 

 

 

 

f2 = 900.1 MHz)

 

 

 

 

 

 

 

Collector Efficiency

h

30

 

38

Ð

 

%

(VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,

 

 

 

 

 

 

 

f2 = 900.1 MHz)

 

 

 

 

 

 

 

Intermodulation Distortion

IMD

Ð

 

±37

±30

 

dBc

(VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,

 

 

 

 

 

 

 

f2 = 900.1 MHz)

 

 

 

 

 

 

 

Output Mismatch Stress

 

 

 

 

 

 

 

(VCC = 26 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz,

y

 

No Degradation in Output Power

 

f2 = 900.1 MHz, Load VSWR = 5:1 (all phase angles))

 

 

 

 

 

 

 

VBB

R1

 

 

R3

 

 

 

 

R5

 

 

VCC

 

 

+

 

 

C21

 

C18

+

C11

+

 

 

 

 

 

 

C13

 

Q1

C6

 

L3

 

 

 

 

L5

 

 

 

 

 

 

 

B3

 

 

 

 

 

 

 

VB

 

 

 

C4

 

 

 

 

 

 

 

 

C25

B1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C16

L7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

L1

C8

 

 

 

 

 

 

 

 

 

COAX 1

 

 

 

 

BALUN 2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TL3

 

DUT

 

TL9

 

 

 

 

 

TL2

 

 

 

 

 

TL7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TL5

 

 

C23

 

 

 

 

INPUT

TL1

 

 

C2

C10

 

C15

C20

 

TL11

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C1

 

 

 

TL6

 

TL8

C24

 

 

 

 

 

 

 

 

C3

 

 

 

 

 

 

 

 

 

 

 

TL4

 

 

 

TL10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BALUN 1

 

L2

 

 

 

COAX 2

 

 

 

 

 

 

 

 

 

L8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C9

 

 

 

 

 

 

 

 

 

 

L4

B2

C17

 

 

 

 

 

 

 

 

VB

 

 

 

B4

L6

 

 

 

 

 

 

 

 

C26

C5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VBB

R2

 

+

R4

 

 

 

 

 

 

 

VCC

 

 

 

C22

C19

R6

 

+

 

 

 

 

C7

 

 

 

 

+

 

 

 

 

 

 

 

 

 

 

C12

 

C14

B1, B2, B3, B4 Ð Short Ferrite Bead, Fair Rite #2743019447 C1 Ð 0.8± 8.0 pF Var Capacitor, Johansen Gigatrim

C2, C3, C23, C24 Ð 43 pF, 100 mil, ATC Chip Capacitor C4, C5, C21, C22 Ð 1000 pF, 100 mil, ATC Chip Capacitor

C6, C7, C11, C12 Ð 10 mF, Electrolytic Capacitor, Panasonic C8, C9, C16, C17 Ð 100 pF, 100 mil, ATC Chip Capacitor C10 Ð 9.1 pF, 50 mil, ATC Chip Capacitor

C13 Ð 250 mF Electrolytic Capacitor, Mallory

C14, C18, C19, C25 Ð 0.1 mF, Chip Capacitor, Kemet C15 Ð 1.1 pF, 50 mil, ATC Chip Capacitor

C20 Ð 6.8 pF, 100 mil, ATC Chip Capacitor

L1, L2, L3, L4, L5, L6, L7, L8 Ð 5 T urns 20 AWG, IDIA 0.126″ Choke, Taylor Spring 46 nH

N1, N2 Ð T ype N Flange Mount, Omni Spectra 3052±1648±10 Q1 Ð Bias Transistor BD136 PNP

R1, R12 Ð 27 Ohm, 2.0 W

R3, R4, R5, R6 Ð 4.0 x 39 Ohm, 1/8 W, Chips Resistors in R3, R4, R5, R6 Ð Parallel, Rohm 390±J

SB1 Ð 0.15 ″ x 0.3″ x 0.03″ Cu

TL1± TL11 Ð Microstrip Line, See Photomaster

Balun1, Balun2, Coax 1, Coax 2 Ð 2.20 ″ 50 Ohm, 0.086″ o.d. Balun1, Balun2, Coax 1, Coax 2 Ð semi±rigid coax, Micro Coax Balun1, Balun2, Coax 1, Coax 2 Ð UT±85±M17

Circuit Board Ð 1/32 ″ Glass Teflon, Arlon GX±0300±55±22, Circuit Board Ð er = 2.55

 

Figure 1. 840± 900 MHz Test Circuit Schematic

 

 

MRF897R

MOTOROLA RF DEVICE DATA

2

 

 

45

 

 

 

 

 

 

 

45

 

 

 

 

 

 

Pin = 3 W

 

 

40

 

 

 

 

 

 

 

40

 

 

 

 

 

 

 

(WATTS)

 

 

 

f = 800 MHz

 

 

(WATTS)

 

 

 

 

 

 

 

 

35

 

 

 

 

 

35

 

 

 

 

 

 

2.5 W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2 W

 

 

30

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

POWER

 

 

 

900 MHz

 

POWER

 

 

 

 

 

 

 

 

25

 

 

 

 

25

 

 

 

 

 

 

1.5 W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

960 MHz

 

 

 

 

 

 

 

 

 

 

 

OUTPUT,

20

 

 

 

 

 

OUTPUT,

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1 W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

15

 

 

 

 

 

 

 

15

 

 

 

 

 

 

0.5 W

 

out 10

 

 

 

VCC = 24 Vdc

 

 

out 10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

P

 

 

 

 

ICQ = 125 mA

 

 

P

 

VCC = 24 Vdc

 

 

 

 

 

 

 

5

 

 

 

 

 

 

5

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

0

ICQ = 125 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

860

 

 

 

 

 

 

0.0

0.5

1.0

1.5

2.0

2.5

3.0

 

800

820

840

880

900

920

940

960

 

 

 

Pin, INPUT POWER (WATTS)

 

 

 

 

 

 

f, FREQUENCY (MHz)

 

 

 

Figure 2. Output Power versus Input Power

Figure 3. Output Power versus Frequency

 

45

 

 

 

 

 

 

 

 

(dBc)

±25

 

 

 

 

 

 

 

 

40

 

 

 

Pin = 2.5 W

 

 

 

±30

 

 

 

 

3RD ORDER

 

(WATTS)POWER

 

 

 

 

 

 

 

 

DISTORTION

 

 

 

 

 

 

 

35

 

 

 

 

 

 

 

 

±35

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

1.5 W

 

 

 

±40

 

 

 

 

 

5TH

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

25

 

 

 

 

 

 

 

 

INTERMODULATION

±45

 

 

 

 

 

7TH

 

P

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

OUTPUT ,

20

 

 

 

 

 

 

 

 

 

±50

 

 

 

 

 

 

 

 

15

 

 

 

 

 

0.5 W

 

 

±55

 

 

 

 

f1 = 900 MHz

 

 

out 10

 

 

 

 

 

 

 

±60

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f2 = 900.1 MHz

 

 

5

 

 

 

 

 

f = 900 MHz

 

IMD,

±65

 

 

 

 

VCC = 24 Vdc

 

 

 

 

 

 

 

 

I

= 125 mA

 

 

 

 

 

 

ICQ = 125 mA

 

 

0

 

 

 

 

 

CQ

 

 

 

±70

 

 

 

 

 

 

 

 

16

18

20

22

24

26

28

30

 

5

10

15

20

25

30

35

 

14

 

0

 

 

 

VCC, SUPPLY VOLTAGE (VOLTS)

 

 

 

 

 

Pout, OUTPUT POWER (WATTS±PEP)

 

 

Figure 4. Output Power versus Supply Voltage

Figure 5. Intermodulation versus Output Power

 

14.0

 

 

 

 

12

 

 

 

 

 

50

 

 

GAINPOWER, (dB)

13.5

 

 

 

GAIN(dB)

 

Pout = 30 W (PEP)

 

GPE

 

 

(%)

 

11.0

 

 

 

11

 

 

 

45

EFFICIENCY,η

 

 

13.0

ICQ = 400 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

12.5

300 mA

 

 

 

10

 

 

 

 

 

40

 

 

 

12.0

 

 

 

 

 

 

 

 

η

 

 

 

 

 

250 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

11.5

 

 

 

9

 

 

 

 

 

35

 

 

PE

200 mA

 

 

POWER,

 

 

 

 

 

 

 

 

 

 

8

 

 

 

 

 

30

1.51.0 2.0

INPUTVSWR

 

 

 

 

 

 

 

 

 

 

 

 

G

9.0

 

 

 

G

6

VCC = 24 Vdc

 

 

 

 

20

 

10.5

 

 

 

PE

 

 

 

 

 

 

 

 

 

10.0

 

f = 900 MHz

 

 

ICQ = 125 mA

 

INPUT VSWR

 

 

 

 

 

9.5

125 mA

VCC

= 24 Vdc

 

7

 

 

 

 

 

25

 

 

 

 

 

ICQ = 125 mA

 

 

 

 

 

 

 

 

 

 

 

0.01

0.1

1

10

 

840

850

860

870

880

890

900

 

 

 

 

Pout, OUTPUT POWER, (WATTS)

 

 

 

 

f, FREQUENCY (MHz)

 

 

 

 

Figure 6. Power Gain versus Output Power

Figure 7. Broadband Test Fixture Performance

MOTOROLA RF DEVICE DATA

MRF897R

 

3

Pout = 30 W (PEP), VCC = 24 V

f

Zin

ZOL*

MHz

Ohms

Ohms

 

 

 

 

800

1.7

+ j9.2

5.9 ± j0.4

 

 

 

 

850

2.6

+ j10

5.7 + j2.6

 

 

 

 

900

4

+ j9.9

5.9 + j3.4

 

 

 

 

950

5

+ j8.8

6.2 + j4.4

 

 

 

 

ZOL* = Conjugate of the optimum load impedance ZOL* = into which the device operates at a given ZOL* = output power, voltage and frequency.

f = 800 MHz

850

Zin

900

960

960

900

850

Zo = 10 Ohms

ZOL*

f = 800 MHz

NOTE: Zin & ZOL* are given from base±to±base and collector±to±collector respectively.

Figure 8. Series Equivalent Input/Output Impedances

R1

C6

R3

L3

L5

C11

C13

 

 

 

SB1

C25

 

 

C18

R5

 

 

 

 

 

 

 

 

 

 

 

 

 

C4

 

Q1

C21

 

 

 

COAX1

B1

 

B3

 

BALUN2

 

 

 

 

 

 

 

 

 

 

 

 

C8

C16

 

 

 

 

 

 

 

 

 

 

L1

 

L7

 

 

C2

 

 

 

 

 

 

 

C10

C20

C23

 

 

 

 

 

C24

 

 

 

 

 

C15

 

 

C3

 

L2

 

L8

 

 

 

 

 

 

 

C1

 

 

C9

 

 

 

BALUN1

B2

 

C17

 

COAX2

 

 

 

B4

 

 

 

 

 

 

 

 

 

C5

 

 

C22

 

MRF897R

 

 

 

 

 

 

 

C14

 

 

C19

R6

 

 

 

 

 

 

R2

 

R4

L4

L6

 

 

C7

 

 

C12

 

 

 

Figure 9. 840± 900 MHz Test Circuit Component Layout

MRF897R

MOTOROLA RF DEVICE DATA

4

 

PACKAGE DIMENSIONS

 

±A±

Q 2 PL

 

 

 

 

 

 

NOTES:

 

 

 

 

 

 

U

 

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

 

0.51 (0.020) M

T

A

M

B

M

Y14.5M, 1982.

 

 

 

 

 

 

2. CONTROLLING DIMENSION: INCH.

 

 

 

 

 

 

 

 

 

 

 

 

 

INCHES

MILLIMETERS

 

 

 

 

 

 

 

 

 

 

DIM

MIN

MAX

MIN

MAX

 

1

2

 

 

 

 

 

 

 

A

 

0.739

0.750

18.77

19.05

 

 

 

±B±

 

 

 

 

 

 

B

 

0.240

0.260

6.10

6.60

 

 

 

 

 

 

 

 

 

C

 

0.165

0.198

4.19

5.03

 

3

4

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

 

0.055

0.065

1.40

1.65

K

 

 

 

 

 

 

 

 

 

E

 

0.055

0.070

1.40

1.78

 

 

 

 

 

 

 

 

 

G

 

0.110

0.130

2.79

3.30

 

 

 

 

 

 

 

 

 

 

H

 

0.079

0.091

2.01

2.31

 

 

 

 

 

 

 

 

 

 

J

 

0.003

0.005

0.08

0.13

 

 

 

G

 

 

 

 

 

 

K

 

0.180

0.220

4.57

5.59

 

 

 

 

 

 

 

 

 

N

 

0.315

0.330

8.00

8.38

 

 

 

D

 

 

 

 

 

 

 

 

N

 

 

 

 

 

 

 

Q

 

0.125

0.135

3.18

3.42

J

 

E

 

 

 

 

 

 

U

 

0.560 BSC

14.22 BSC

 

 

 

 

 

 

 

 

 

STYLE 1:

 

 

 

 

 

 

C

 

 

 

 

 

 

 

 

 

H

 

 

 

 

 

 

 

 

 

PIN 1. BASE

 

 

 

 

 

±T±

SEATING

 

 

 

 

 

 

2. BASE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3. COLLECTOR

 

 

 

 

 

 

PLANE

 

 

 

 

 

 

4. COLLECTOR

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5. EMITTER

 

 

CASE 395B±01

ISSUE A

MOTOROLA RF DEVICE DATA

MRF897R

 

5

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA / EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

MRF897R/D

 

*MRF897R/D*

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