MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF897/D
The RF Line
NPN Silicon
RF Power Transistor
Designed for 24 Volt UHF large±signal, common emitter, class±AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800±970 MHz.
•Specified 24 Volt, 900 MHz Characteristics Output Power = 30 Watts
Minimum Gain = 10 dB @ 900 MHz, class±AB Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP)
Maximum Intermodulation Distortion ±30 dBc @ 30 Watts (PEP)
•Characterized with Series Equivalent Large±Signal Parameters from 800 to 960 MHz
•Silicon Nitride Passivated
•100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR @ 26 Vdc, and Rated Output Power
•Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal± Migration
•Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
MRF897
30 W, 900 MHz RF POWER TRANSISTOR NPN SILICON
CASE 395B±01, STYLE 1
Rating |
Symbol |
Value |
Unit |
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Collector±Emitter Voltage |
VCEO |
30 |
Vdc |
Collector±Emitter Voltage |
VCES |
60 |
Vdc |
Emitter±Base Voltage |
VEBO |
4.0 |
Vdc |
Collector±Current Ð Continuous |
IC |
4.0 |
Adc |
Total Device Dissipation @ TC = 25°C |
PD |
105 |
Watts |
Derate above 25°C |
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0.60 |
W/°C |
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Storage Temperature Range |
Tstg |
± 65 to +150 |
°C |
THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
Unit |
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Thermal Resistance, Junction to Case |
RθJC |
1.67 |
°C/W |
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS
Collector±Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) |
V(BR)CEO |
30 |
33 |
Ð |
Vdc |
Collector±Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) |
V(BR)CES |
60 |
80 |
Ð |
Vdc |
Emitter±Base Breakdown Voltage (IE = 5 mAdc, IC = 0) |
V(BR)EBO |
4.0 |
4.7 |
Ð |
Vdc |
Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) |
ICES |
Ð |
Ð |
10.0 |
mAdc |
ON CHARACTERISTICS |
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DC Current Gain (ICE = 1.0 Adc, VCE = 5 Vdc) |
hFE |
30 |
80 |
120 |
Ð |
DYNAMIC CHARACTERISTICS |
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Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz) |
Cob |
14 |
21 |
28 |
pF |
(continued)
REV 6
Motorola, Inc. 1994
ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted.)
Characteristic |
Symbol |
Min |
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Max |
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Unit |
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FUNCTIONAL CHARACTERISTICS |
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Common±Emitter Amplifier Power Gain |
Gpe |
10.0 |
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12.0 |
Ð |
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dB |
(VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, |
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f2 = 900.1 MHz) |
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Collector Efficiency |
h |
35 |
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38 |
Ð |
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% |
(VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, |
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f2 = 900.1 MHz) |
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Intermodulation Distortion |
IMD |
Ð |
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±37 |
±30 |
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dBc |
(VCC = 24 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, |
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f2 = 900.1 MHz) |
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Output Mismatch Stress |
y |
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No Degradation in Output Power |
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(VCC = 26 Vdc, Pout = 30 Watts (PEP), Icq = 125 mA, f1 = 900 MHz, |
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Before and After Test |
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f2 = 900.1 MHz, Load VSWR = 5:1 (all phase angles)) |
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Q1 |
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C11 |
C13 |
C18 |
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VCC |
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R1 |
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+ |
+ |
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VBB |
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+ |
L5 |
R5 |
C21 |
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COAX 1 |
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R3 |
L3 |
C6 |
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C4 |
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B3 |
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BALUN 2 |
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B1 |
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C16 |
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TL9 |
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TL3 |
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C8 |
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L7 |
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L1 |
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TL2 |
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TL7 |
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OUTPUT |
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INPUT |
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TL5 |
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C23 |
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TL11 |
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C2 |
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TL1 |
C10 |
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C15 |
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C20 |
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C1 |
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TL6 |
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TL8 |
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C24 |
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C3 |
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D.U.T. |
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L2 |
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L8 |
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TL4 |
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BALUN 1 |
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B2 |
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TL10 |
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C9 |
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B4 |
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C17 |
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C5 |
R4 |
L4 |
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COAX 2 |
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R2 |
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L6 |
R6 |
C22 |
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VBB |
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+ |
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C7 |
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VCC |
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Q2 |
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+ |
+ |
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C12 |
C14 |
C19 |
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B1, B2, B3, B4 Ð Ferrite Bead, Fair Rite #2743019447 |
N1, N2 Ð T ype N Flange Mount, Omni Spectra 3052±1648±10 |
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C1 Ð 0.8± 8.0 pF Trimmer Capacitor, Johanson |
Q1 Ð Bias Transistor BD136 PNP |
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C2, C3, C23, C24 Ð 43 pF, 100 mil, ATC Chip Capacitor |
R1, R12 Ð 39 Ohm, 2.0 W |
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C4, C5, C18, C19, C21, C22 Ð 820 pF , 100 mil, Chip Capacitor, Kemet |
R3, R4, R5, R6 |
Ð 4.0 x 39 Ohm, 1/8 W, Chips in Parallel, |
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C6, C7, C11, C12 Ð 10 mF, Lytic Capacitor, Panasonic |
R3, R4, R5, R6 |
Ð Rohm 390±J |
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C8, C9, C16, C17 Ð 100 pF, 100 mil, Chip Capacitor, Murata Erie |
TL1± TL11 Ð See Photomaster |
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C10 Ð 13 pF, 50 mil, ATC Chip Capacitor |
Balun1, Balun2, Coax 1, Coax 2 Ð 2.20 ″ 50 Ohm, 0.088″ o.d. |
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C13, C14 Ð 250 mF Lytic Capacitor, Mallory |
Balun1, Balun2, Coax 1, Coax 2 Ð |
semi±rigid coax, Micro Coax |
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C15 Ð 1.1 pF, 50 mil, ATC Chip Capacitor |
Balun1, Balun2, Coax 1, Coax 2 Ð |
UT±85±M17 |
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C20 Ð 6.8 pF, 100 mil, ATC Chip Capacitor |
Board Ð 1/32 ″ Glass Teflon, Arlon GX±0300±55±22, er = 2.55 |
L1, L2, L3, L4, L5, L6 Ð 5 T urns 20 AWG, IDIA 0.126″ choke |
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Figure 1. MRF897 Broadband Test Circuit |
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MRF897 |
MOTOROLA RF DEVICE DATA |
2 |
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45 |
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45 |
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PIN = 3 W |
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40 |
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40 |
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f = 800 MHz |
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(WATTS) |
35 |
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(WATTS) |
35 |
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2.5 W |
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2 W |
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30 |
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30 |
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900 MHz |
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POWER |
25 |
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POWER |
25 |
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1.5 W |
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960 MHz |
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20 |
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20 |
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OUTPUT, |
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OUTPUT, |
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1 W |
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VCC = 24 Vdc |
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10 |
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10 |
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15 |
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15 |
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0.5 W |
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o |
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Icq = 125 mA |
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o |
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VCC = 24 Vdc |
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P |
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P |
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5 |
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5 |
Icq = 125 mA |
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0 |
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0 |
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2.5 |
3.0 |
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0.0 |
0.5 |
1.0 |
1.5 |
2.0 |
800 |
820 |
840 |
860 |
880 |
900 |
920 |
940 |
960 |
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PIN, INPUT POWER (WATTS) |
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f, FREQUENCY (MHz) |
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Figure 2. Output Power versus Input Power |
Figure 3. Output Power versus Frequency |
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45 |
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(dBc) |
±25 |
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40 |
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PIN = 2.5 W |
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±30 |
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DISTORTION |
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POWER(WATTS) |
35 |
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±35 |
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30 |
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1.5 W |
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±40 |
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25 |
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±45 |
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20 |
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±50 |
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OUTPUT |
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INTERMODULATION |
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15 |
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0.5 W |
±55 |
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±60 |
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, |
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o10 |
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P |
5 |
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f = 900 MHz |
±65 |
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IMD, |
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Icq = 125 mA |
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0 |
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±70 |
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16 |
18 |
20 |
22 |
24 |
26 |
28 |
30 |
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14 |
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VCC, SUPPLY VOLTAGE (VOLTS) |
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3RD ORDER |
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5TH |
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7TH |
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f1 |
= 900 MHz |
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f2 |
= 900.1 MHz |
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VCC = 24 Vdc |
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Icq = 125 mA |
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0 |
5 |
10 |
15 |
20 |
25 |
30 |
35 |
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Po, OUTPUT POWER (WATTS±PEP) |
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Figure 4. Output Power versus Supply Voltage |
Figure 5. Intermodulation versus Output Power |
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14.0 |
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12 |
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50 |
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13.5 |
Icq = 400 mA |
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GPE |
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(%) |
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(dB)GAINPOWER |
13.0 |
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(dB)GAIN |
11 |
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45 |
EFFICIENCY,η |
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12.5 |
300 mA |
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10 |
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40 |
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η |
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12.0 |
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250 mA |
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11.5 |
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9 |
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35 |
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PE |
200 mA |
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POWER, |
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11.0 |
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8 |
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30 |
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, |
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Icq = 125 mA |
G |
6 |
Icq = 125 mA |
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20 |
1.51.0 2.0 |
INPUTVSWR |
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G |
9.0 |
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10.5 |
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PE |
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INPUT VSWR |
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10.0 |
125 mA |
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f = 900 MHz |
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7 |
POUT = 30 W (PEP) |
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25 |
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9.5 |
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VCC = 24 Vdc |
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VCC = 24 Vdc |
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0.01 |
0.1 |
1 |
10 |
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840 |
850 |
860 |
870 |
880 |
890 |
900 |
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Po, OUTPUT POWER, (WATTS) |
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f, FREQUENCY (MHz) |
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Figure 6. Power Gain versus Output Power |
Figure 7. Broadband Test Fixture Performance |
MOTOROLA RF DEVICE DATA |
MRF897 |
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3 |
f |
Zin |
ZOL* |
MHz |
Ohms |
Ohms |
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800 |
1.0 + j10.3 |
5.9 ± j0.4 |
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850 |
1.5 + j10.5 |
5.7 + j2.6 |
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900 |
1.8 + j11.0 |
5.9 + j3.4 |
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960 |
2.2 + j11.4 |
6.2 + j4.4 |
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ZOL* = Conjugate of the optimum load impedance
ZOL* = into which the device operates at a given
ZOL* = output power, voltage and frequency.
NOTE: Zin & ZOL* are given from base±to±base and
collector±to±collector respectively.
f = 800 MHz
900
850
960
Zin
960
900
850 |
Zo = 10 Ohms |
ZOL*
f = 800 MHz
Po = 300 W (PEP), VCC = 24 V
Figure 8. Series Equivalent Input/Output Impedances
MRF897 |
MOTOROLA RF DEVICE DATA |
4 |
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PACKAGE DIMENSIONS
±A± |
Q 2 PL |
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U |
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0.51 (0.020) M |
T |
A |
M |
B |
M |
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1 |
2 |
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±B± |
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3 |
4 |
5 |
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K
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G |
STYLE 1: |
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D |
PIN 1. |
BASE |
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N |
2. |
BASE |
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J |
E |
3. |
COLLECTOR |
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4. |
COLLECTOR |
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H |
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C |
5. |
EMITTER |
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±T± |
SEATING |
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PLANE |
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NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
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INCHES |
MILLIMETERS |
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DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.739 |
0.750 |
18.77 |
19.05 |
B |
0.240 |
0.260 |
6.10 |
6.60 |
C |
0.165 |
0.198 |
4.19 |
5.03 |
D |
0.055 |
0.065 |
1.40 |
1.65 |
E |
0.055 |
0.070 |
1.40 |
1.78 |
G |
0.110 |
0.130 |
2.79 |
3.30 |
H |
0.079 |
0.091 |
2.01 |
2.31 |
J |
0.003 |
0.005 |
0.08 |
0.13 |
K |
0.180 |
0.220 |
4.57 |
5.59 |
N |
0.315 |
0.330 |
8.00 |
8.38 |
Q |
0.125 |
0.135 |
3.18 |
3.42 |
U |
0.560 BSC |
14.22 BSC |
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CASE 395B±01
ISSUE A
MOTOROLA RF DEVICE DATA |
MRF897 |
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5 |
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036.
EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan.
ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong.
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MRF897/D |
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*MRF897/D* |