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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF175LU/D

The RF MOSFET Line

RF Power

Field-Effect Transistors

N±Channel Enhancement±Mode

Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and broadband performance of each device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.

• Guaranteed Performance
MRF175LU @ 28 V, 400 MHz (ªUº Suffix)
Output Power Ð 100 Watts
Power Gain Ð 10 dB Typ
Efficiency Ð 55% Typ
MRF175LV @ 28 V, 225 MHz (ªVº Suffix)
Output Power Ð 100 Watts
Power Gain Ð 14 dB Typ
Efficiency Ð 65% Typ	D

•100% Ruggedness Tested At Rated Output Power

•Low Thermal Resistance

• Low Crss Ð 20 pF Typ @ V DS = 28 V

MAXIMUM RATINGS

MRF175LU

MRF175LV

100 W, 28 V, 400 MHz

N±CHANNEL

BROADBAND

RF POWER FETs

CASE 333±04, STYLE 2

Rating	Symbol	Value	Unit

Drain±Source Voltage	VDSS	65	Vdc
Gate±Source Voltage	VGS	± 40	Vdc
Drain Current Ð Continuous	ID	13	Adc
Total Device Dissipation @ TC = 25°C	PD	270	Watts
Derate above 25°C		1.54	W/°C

Storage Temperature Range	Tstg	± 65 to +150	°C
Operating Junction Temperature	TJ	200	°C
THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	0.65	°C/W

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Drain±Source Breakdown Voltage	V(BR)DSS	65	Ð	Ð	Vdc
(VGS = 0, ID = 50 mA)
Zero Gate Voltage Drain Current	IDSS	Ð	Ð	2.5	mAdc
(VDS = 28 V, VGS = 0)
Gate±Body Leakage Current	IGSS	Ð	Ð	1.0	μAdc
(VGS = 20 V, VDS = 0)
					(continued)

Handling and Packaging Ð MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

REV 8

MOTOROLAMotorola, Inc. 1997RF DEVICE DATA	MRF175LU MRF175LV
	1

ELECTRICAL CHARACTERISTICS Ð continued (TC = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

ON CHARACTERISTICS

Gate Threshold Voltage (VDS = 10 V, ID = 100 mA)

VGS(th)

1.0

3.0

6.0

Vdc

Drain±Source On±Voltage (VGS = 10 V, ID = 5.0 A)

VDS(on)

0.1

0.9

1.5

Vdc

Forward Transconductance (VDS = 10 V, ID = 2.5 A)

gfs

2.0

3.0

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)

Ciss

180

Output Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)

Coss

200

Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1.0 MHz)

Crss

FUNCTIONAL CHARACTERISTICS Ð MRF175LV (Figure 1)

Common Source Power Gain

Gps

(VDD = 28 Vdc, Pout = 100 W, f = 225 MHz, IDQ = 100 mA)

Drain Efficiency

(VDD = 28 Vdc, Pout = 100 W, f = 225 MHz, IDQ = 100 mA)

Electrical Ruggedness

(VDD = 28 Vdc, Pout = 100 W, f = 225 MHz, IDQ = 100 mA,

No Degradation in Output Power

VSWR 30:1 at all Phase Angles)

FUNCTIONAL CHARACTERISTICS Ð MRF175LU (Figure 2)

Common Source Power Gain

Gps

8.0

(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 100 mA)

Drain Efficiency

(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 100 mA)

Electrical Ruggedness

(VDD = 28 Vdc, Pout = 100 W, f = 400 MHz, IDQ = 100 mA,

No Degradation in Output Power

VSWR 30:1 at all Phase Angles)

RFC1

BIAS

+28 Vdc

C10

C11

RF INPUT

RF OUTPUT

D.U.T.

C1, C2, C8 Ð Arco 463 or Equivalent C3, C7 Ð 25 pF Unelco Cap

C4 Ð 1000 pF Chip Cap

C5 Ð 0.01 mF Chip Cap

C6 Ð 250 pF Unelco Cap

C9 Ð Arco 462 or Equivalent

C10 Ð 1000 pF ATC Chip Cap

C11 Ð 10 mF 100 V Electrolytic

Ð Hairpin Inductor #18 Wire

L3 Ð Hairpin Inductor #16 Wire

0.45″

0.15″

0.32″

0.2″

Ð Stripline Inductor 0.200 ″ x 0.500″

L4 Ð 2 Turns #16 Wire 5/16 ″ ID

RFC1 Ð VK200±4B

Ð 1.0 k 1/4 W Resistor

Ð 100 W Resistor

Figure 1. 225 MHz Test Circuit

MRF175LU MRF175LV	MOTOROLA RF DEVICE DATA
2

				C11	C12	L3	C13	C14
								+ v
BIAS
C9	R2							GND
.01 mf	R2							GND
.01 mf				L2
				L2
		R1						C8
					Z2		Z3	OUT
C1	L1
IN		Z1
C2	C3	C4	D.U.T.	C5		C6	C7
				C5		C6	C7

C1, C8 Ð 270 pF ATC Chip Cap	L1	Ð Hairpin Inductor #18 Wire
C2, C4, C6, C7 Ð 1.0 ± 20 pF Trimmer Cap
C2, C4, C6, C7 Ð 1.0 ± 20 pF Trimmer Cap
C3 Ð 15 pF Mini Unelco Cap
C5 Ð 33 pF Mini Unelco Cap
C9, C12 Ð 0.1 mF Ceramic Cap		0.25″
C11, C14 Ð 680 pF Feed Thru Cap			0.4″
C13 Ð 50 mF Tantalum Cap	L2	Ð 12 Turns #18 Wire 0.450 ″ ID
	L2	Ð 12 Turns #18 Wire 0.450 ″ ID
	L3	Ð Ferroxcube VK200 20/4B

R1 Ð 10 k 1/4 W Resistor

R2 Ð 1 k 1/4 W Resistor

R3 Ð 1.5 k 1/4 W Resistor

Z1 Ð Microstrip Line 0.950 ″ x 0.250″

Z2 Ð Microstrip Line 1 ″ x 0.250″

Z3 Ð Microstrip Line 0.550 ″ x 0.250″

Board Material Ð 0.062 ″ Teflon Ð fiberglass, er = 2.56, 1 oz. copper clad both sides

Figure 2. 400 MHz Test Circuit

								TYPICAL CHARACTERISTICS
	4000											100
GAIN FREQUENCY (MHz)	3000					VDS = 20 V
						VDS = 20 V
	2000						10 V					10
							10 V					DRAIN CURRENT(AMPS)
												DRAIN CURRENT(AMPS)
UNITY	1000											,
	1000											D		TC = 25°C
												D
,												I
T												I
f
	0											0
	0	2	4	6	8	10	12	14	16	18	20	0	10	100

ID, DRAIN CURRENT (AMPS)	ID, DRAIN CURRENT (AMPS)
Figure 3. Common Source Unity Current Gain	Figure 4. DC Safe Operating Area
Frequency versus Drain Current

MOTOROLA RF DEVICE DATA	MRF175LU MRF175LV
	3

					TYPICAL CHARACTERISTICS
	5					(NORMALIZED)	1.2
(AMPS)	4											VDD = 28 V
	4			VDS = 10 V			1.1
				VDS = 10 V			1.1
CURRENT	3					VOLTAGE					ID = 4 A
							1				ID = 4 A	3 A
												3 A


, DRAIN	2					-SOURCE						2 A
												2 A
		TYPICAL DEVICE SHOWN, VGS(th) = 3 V
D		TYPICAL DEVICE SHOWN, VGS(th) = 3 V					0.9
I	1					GATE						100 mA
												100 mA

						,
						GS
	0					V	0.8
	0						0.8
	1	2	3	4	5	6	± 25	0	25	50	75	100	125	150	175
		VGS, GATE±SOURCE VOLTAGE (VOLTS)								TC, CASE TEMPERATURE (°C)

Figure 5. Drain Current versus Gate Voltage	Figure 6. Gate±Source Voltage versus
(Transfer Characteristics)	Case Temperature

	1000
					VGS = 0 V
	500				f = 1 MHz
	500		Coss
(pF)			Coss
(pF)	200
CAPACITANCE	200		Ciss
			Ciss
	100
	50		Crss
C,	50
C,
			oss
	20
	0
	0	5	10	15	20	25

VDS, DRAIN±SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance versus Drain±Source Voltage

MRF175LU MRF175LV	MOTOROLA RF DEVICE DATA
4

TYPICAL CHARACTERISTICS

MRF175LV

MRF175LU

Pout , OUTPUT POWER (WATTS)

160

140

120

100

Pin = 6 W

4 W

2 W

f = 225 MHz

IDQ = 100 mA

Pout , OUTPUT POWER (WATTS)

160

140

120

100

Pin = 14 W

10 W

6 W

IDQ = 100 mA

f = 400 MHz

12	16	20	24	28	12	14	16	18	20	22	24	26	28
	VDD, SUPPLY VOLTAGE (VOLTS)							SUPPLY VOLTAGE (VOLTS)
	Figure 8. Output Power versus Supply Voltage					Figure 9. Output Power versus Supply Voltage

POWER GAIN (dB)

30								160
							(WATTS)	140						f = 225 MHz
25							(WATTS)	120
25

20							POWER	100							400 MHz
							POWER


							OUTPUT,	80
15							OUTPUT,	60
15

10	VDS = 28 V						out	40							VDD = 28 V
	I	= 100 mA					out
	I	= 100 mA					P
	DQ							20							IDQ = 100 mA
	P	= 100 W						20
	P	= 100 W
	out
5								0
5	10	20	50	100	200	500		0	2	4	6	8	10	12	14	16	18	20

f, FREQUENCY (MHz)	Pin, INPUT POWER (WATTS)
	Pin, INPUT POWER (WATTS)
Figure 10. Power Gain versus Frequency	Figure 11. Output Power versus Input Power

MOTOROLA RF DEVICE DATA	MRF175LU MRF175LV
	5

INPUT AND OUTPUT IMPEDANCE

175	225	300	f = 400 MHz
175			f = 400 MHz
150
175	225	300 f = 400 MHz
100	225
Zin	150
100		ZOL*
30	30
Zo = 10 Ω

VDD = 28 V, IDQ = 100 mA, (Pout = 100 W)

f	Zin	ZOL*
MHz	Ohms	Ohms

30	2.80 ± j4.00	3.65 ± j1.30
100	1.40 ± j2.80	2.60 ± j1.50
150	1.10 ± j1.90	2.10 ± j1.40
175	1.00 ± j1.25	1.80 ± j1.20
225	0.95 ± j0.65	1.50 ± j0.80
300	0.95 + j0.20	1.35 ± j0.30
400	1.05 + j1.15	1.45 + j0.55

ZOL* = CONJUGATE OF THE OPTIMUM LOAD IMPEDANCE INTO WHICH THE DEVICE OUTPUT OPERATES AT A GIVEN

OUTPUT POWER, VOLTAGE AND FREQUENCY.

RF POWER MOSFET CONSIDERATIONS

MOSFET CAPACITANCES

The physical structure of a MOSFET results in capacitors between the terminals. The metal oxide gate structure determines the capacitors from gate±to±drain (Cgd), and gate±to± source (Cgs). The PN junction formed during the fabrication of the FET results in a junction capacitance from drain±to±

source (Cds).

These capacitances are characterized as input (Ciss), output (Coss) and reverse transfer (Crss) capacitances on data sheets. The relationships between the inter±terminal capacitances and those given on data sheets are shown below. The Ciss can be specified in two ways:

1.Drain shorted to source and positive voltage at the gate.

2.Positive voltage of the drain in respect to source and zero volts at the gate. In the latter case the numbers are lower. However, neither method represents the actual operating conditions in RF applications.

DRAIN
Cgd
GATE	Ciss = Cgd + Cgs
Cds	C	= C	gd	+ C	ds
	oss		gd		ds
	Crss = Cgd
Cgs
SOURCE

LINEARITY AND GAIN CHARACTERISTICS

In addition to the typical IMD and power gain data presented, Figure 3 may give the designer additional information on the capabilities of this device. The graph represents the small signal unity current gain frequency at a given drain cur-

rent level. This is equivalent to fT for bipolar transistors. Since this test is performed at a fast sweep speed, heating of the device does not occur. Thus, in normal use, the higher temperatures may degrade these characteristics to some extent.

DRAIN CHARACTERISTICS

One figure of merit for a FET is its static resistance in the full±on condition. This on±resistance, VDS(on), occurs in the linear region of the output characteristic and is specified under specific test conditions for gate±source voltage and drain current. For MOSFETs, VDS(on) has a positive temperature coefficient and constitutes an important design consideration at high temperatures, because it contributes to the power dissipation within the device.

GATE CHARACTERISTICS

The gate of the FET is a polysilicon material, and is electrically isolated from the source by a layer of oxide. The input resistance is very high Ð on the order of 10 9 ohms Ð resulting in a leakage current of a few nanoamperes.

Gate control is achieved by applying a positive voltage slightly in excess of the gate±to±source threshold voltage,

VGS(th).

Gate Voltage Rating Ð Never exceed the gate voltage rating. Exceeding the rated VGS can result in permanent damage to the oxide layer in the gate region.

Gate Termination Ð The gates of these devices are essentially capacitors. Circuits that leave the gate open±circuited or floating should be avoided. These conditions can result in turn±on of the devices due to voltage build±up on the input capacitor due to leakage currents or pickup.

MRF175LU MRF175LV	MOTOROLA RF DEVICE DATA
6

Gate Protection Ð These devices do not have an internal monolithic zener diode from gate±to±source. If gate protection is required, an external zener diode is recommended.

Using a resistor to keep the gate±to±source impedance low also helps damp transients and serves another important function. Voltage transients on the drain can be coupled to the gate through the parasitic gate±drain capacitance. If the gate±to±source impedance and the rate of voltage change on the drain are both high, then the signal coupled to the gate may be large enough to exceed the gate±threshold voltage and turn the device on.

HANDLING CONSIDERATIONS

When shipping, the devices should be transported only in antistatic bags or conductive foam. Upon removal from the packaging, careful handling procedures should be adhered to. Those handling the devices should wear grounding straps and devices not in the antistatic packaging should be kept in metal tote bins. MOSFETs should be handled by the case and not by the leads, and when testing the device, all leads should make good electrical contact before voltage is applied. As a final note, when placing the FET into the system it is designed for, soldering should be done with a grounded iron.

DESIGN CONSIDERATIONS

The MRF175L is a RF power N±channel enhancement mode field±effect transistor (FETs) designed for HF, VHF and UHF power amplifier applications. Motorola FETs feature a vertical structure with a planar design.

Motorola Application Note AN211A, FETs in Theory and Practice, is suggested reading for those not familiar with the construction and characteristics of FETs.

The major advantages of RF power FETs include high gain, low noise, simple bias systems, relative immunity from thermal runaway, and the ability to withstand severely mismatched loads without suffering damage. Power output can be varied over a wide range with a low power dc control signal.

DC BIAS

The MRF175L is an enhancement mode FET and, therefore, does not conduct when drain voltage is applied. Drain current flows when a positive voltage is applied to the gate. RF power FETs require forward bias for optimum performance. The value of quiescent drain current (IDQ) is not critical for many applications. The MRF175L was characterized at IDQ = 100 mA, each side, which is the suggested minimum value of IDQ. For special applications such as linear amplification, IDQ may have to be selected to optimize the critical parameters.

The gate is a dc open circuit and draws no current. Therefore, the gate bias circuit may be just a simple resistive divider network. Some applications may require a more elaborate bias sytem.

GAIN CONTROL

Power output of the MRF175L may be controlled from its rated value down to zero (negative gain) by varying the dc gate voltage. This feature facilitates the design of manual gain control, AGC/ALC and modulation systems.

MOTOROLA RF DEVICE DATA	MRF175LU MRF175LV
	7

PACKAGE DIMENSIONS

	±A±							NOTES:
	±A±	Q 2 PL						1. DIMENSIONING AND TOLERANCING PER ANSI
								1. DIMENSIONING AND TOLERANCING PER ANSI
	N							Y14.5M, 1982.
	N	0.13 (0.005) M	T	A		B		2. CONTROLLING DIMENSION: INCH.
	D	0.13 (0.005) M	T	A	M	B	M		INCHES		MILLIMETERS
									INCHES		MILLIMETERS
		K						DIM	MIN	MAX	MIN	MAX
	2	K						A	0.965	0.985	24.51	25.02
								B	0.390	0.410	9.91	10.41
1	3							C	0.250	0.290	6.73	7.36
P		±B±						D	0.190	0.210	4.83	5.33
P		±B±						E	0.095	0.115	2.42	2.92
								E	0.095	0.115	2.42	2.92
								F	0.215	0.235	5.47	5.96
								G	0.725 BSC		18.42 BSC
	4	K						H	0.155	0.175	3.94	4.44
								J	0.004	0.006	0.10	0.15
	F							K	0.195	0.205	4.95	5.21
	F							L	0.740	0.770	18.80	19.55
	G							N	0.415	0.425	10.54	10.80
	G							P	0.390	0.400	9.91	10.16
								Q	0.120	0.135	3.05	3.42

J			STYLE 1:
J	N	N	PIN 1.	EMITTER
	N	N	2.	COLLECTOR
			3.	EMITTER
		C	4.	BASE
H		C
H
		±T±	SEATING
			PLANE

CASE 333±04

ISSUE E

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊	MRF175LU/D
	MOTOROLA RF DEVICE DATA
	MRF175LU/D

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