Добавил:

student_tipo Опубликованный материал нарушает ваши авторские права? Сообщите нам.

Вуз:

Балаковский институт техники, технологии и управления

Предмет:

[НЕСОРТИРОВАННОЕ]

Файл:

mrf15060rev0

.pdf

Источник:

https://manualmachine.com

Скачиваний:

Добавлен:

06.01.2022

Размер:

168.28 Кб

Скачать

☆

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MRF15060/D

The RF Sub±Micron Bipolar Line

RF Power Bipolar Transistors

Designed for broadband commercial and industrial applications at frequencies from 1400 to 1600 MHz. The high gain and broadband performance of these devices makes them ideal for large±signal, common±emitter class A and class AB amplifier applications in 26 volt amplitude modulated and multi±carrier base station equipment.

•Guaranteed Two±Tone Performance at 1490 MHz, 26 Volts Output Power Ð 60 Watts (PEP)

Power Gain Ð 10 dB Efficiency Ð 33%

•Characterized with Series Equivalent Large±Signal Impedance Parameters

•S±Parameter Characterization at High Bias Levels

•Excellent Thermal Stability

•All Gold Metal for Ultra Reliability

•Capable of Handling 3:1 VSWR @ 26 Vdc, 1490 MHz, 60 Watts (PEP) Output Power

MRF15060

MRF15060S

60 W, 1.49 GHz RF POWER BIPOLAR TRANSISTORS

CASE 451±04, STYLE 1 (MRF15060)

CASE 451A±01, STYLE 1 (MF15060S)

MAXIMUM RATINGS

Rating	Symbol	Value	Unit

Collector±Emitter Voltage	VCEO	25	Vdc
Collector±Emitter Voltage	VCES	60	Vdc
Emitter±Base Voltage	VEBO	60	Adc
Collector Current ± Continuous	IC	8	Adc
Total Device Dissipation @ TC = 70°C	PD	185	Watts
Derate above 70°C		1.43	W/°C

Storage Temperature Range	Tstg	± 65 to +150	°C
Operating Junction Temperature	TJ	200	°C
THERMAL CHARACTERISTICS

Rating	Symbol	Max	Unit

Thermal Resistance, Junction to Case	RθJC	0.7	°C/W

MOTOROLAMotorola, Inc. 1996RF DEVICE DATA	MRF15060 MRF15060S
	1

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector±Emitter Breakdown Voltage	V(BR)CEO	25	Ð	Ð	Vdc
(IC = 50 mAdc, IB = 0)
Collector±Emitter Breakdown Voltage	V(BR)CES	60	Ð	Ð	Vdc
(IC = 50 mAdc, VBE = 0)
Emitter±Base Breakdown Voltage	V(BR)EBO	3	3.5	Ð	Vdc
(IE = 10 mAdc, IC = 0 mAdc)
Collector Cutoff Current	ICES	Ð	Ð	10	mAdc
(VCE = 30 Vdc, VBE = 0)

ON CHARACTERISTICS

DC Current Gain	hFE	20	40	80	Ð
(IC = 1 Adc, VCE = 5 Vdc)

DYNAMIC CHARACTERISTICS

Output Capacitance		= 0, f = 1.0 MHz) (1)	Cob	Ð		55	Ð	pF
(V = 26 Vdc, I	E	= 0, f = 1.0 MHz) (1)
CB	E
FUNCTIONAL TESTS (In Motorola Test Circuit. See Figure 1)

Common±Emitter Amplifier Power Gain			Gpe	10		11.7	Ð	dB
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
Collector Efficiency			η	33		38	Ð	dB
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
3rd Order Intermodulation Distortion			IMD	Ð		± 32	± 28	dB
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
Input Return Loss			IRL	12		20	Ð	dB
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,
f1 = 1490.0 MHz, f2 = 1490.1 MHz)
Output Mismatch Stress
(VCC = 26 Vdc, Pout = 60 Watts (PEP), ICQ = 200 mA,			ψ		No Degradation in Output Power
f1 = 1490.0 MHz, f2 = 1490.1 MHz,					No Degradation in Output Power
f1 = 1490.0 MHz, f2 = 1490.1 MHz,
VSWR = 3:1, at All Phase Angles)

(1) For information only. This part is collector matched.

MRF15060 MRF15060S	MOTOROLA RF DEVICE DATA
2

	VBASE
	R1	Q1	+
		Q1
		C17	C18
		C17	C18
	D1
		Q2				+					VCC
						+				+	+
				C10	C11	C12				+	+
		R2		C10	C11	C12		C13	C14	C15	C16
								C13	C14	C15	C16

		B1	R3			B2	R4
						B2	R4
			C6	C7			C8	C9
							C8	C9
		L1					L2
		L1
				C3
							TL3		TL4
	TL1	TL2					TL3		C2		OUTPUT
INPUT		TL2							C2
		C1			DUT
					DUT
								C5
			C4

B1, B2	Short RF Bead Fair Rite±2743019447	D1	Diode, 1N4003
C1, C2, C6, C8	18 pF, Chip Capacitor	L1, L2	3 Turns, 20 AWG, IDIA 0.102″ (17.7 nH)
C3	3.9 pF, Chip Capacitor	Q1	Transistor, NPN BD135
C4, C5	0.6±4.5 pF, Variable Capacitor	Q2	Transistor, PNP BD136
C7, C9	100 pF, Chip Capacitor	R1	120 W, 1/4 W Resistor
C10, C13	1000 pF, Chip Capacitor	R2	51 W, 1/4 W, Chip Resistor
C11, C14, C17	0.1 mF, 50 Vdc Ceramic Capacitor	R3, R4	4 x 39 W, 1/8 W Chip Resistors
C12, C15, C18	10 mF, 50 Vdc Electrolytic Capacitor	TL1±TL4	Microstrip Line See Photomaster
C16	250 mF, 50 Vdc Electrolytic Capacitor	Board	1/32″ Glass Teflon , Arlon GX±0300±55±22,
			er = 2.55

Figure 1. MRF15060 RF Test Fixture Schematic

MOTOROLA RF DEVICE DATA	MRF15060 MRF15060S
	3

TYPICAL CHARACTERISTICS

	80
	80
(WATTS)	70
(WATTS)	60		G	pe
			G	pe
POWER
POWER	40
OUTPUT,	50
OUTPUT,	30		P	out
			P	out

out	20				VCC =	26 Vdc
out
P
	10				ICQ = 200 mA
	0				f = 1490.0 MHz

		1	2		3		4	5	6
	0	1	2		3		4	5	6

Pin, INPUT POWER (WATTS)

Figure 2. Output Power & Power Gain

versus Input Power

12.580

			70	P = 5 W
	(dB)GAIN	(WATTS)POWER		in
12	(dB)GAIN	(WATTS)POWER	60
12			60
			50
			50	2.5 W
11.5			40	2.5 W
	G	OUTPUT,
					Single Tone
					Single Tone
	,				VCC = 26 Vdc
	pe		30		VCC = 26 Vdc
			30		ICQ = 200 mA
					ICQ = 200 mA
11		out	20	1 W
		out
		P	10

10.50

7	1400	1420	1440	1460	1480	1500	1520	1540	1560	1580	1600
				f, FREQUENCY (MHz)

Figure 3. Output Power versus Frequency

(dBc)

± 20

± 25

DISTORTION

± 40

5th Order

± 30

3rd Order

INTERMODULATION

± 35

± 45

7th Order

± 50

± 55

VCC =

26 Vdc

± 60

ICQ = 200 mA

IMD,

± 65

f1 = 1490.0 MHz

f2 = 1490.1 MHz

± 70

Pout, OUTPUT POWER (WATTS) PEP

Figure 4. Intermodulation Distortion

versus Output Power

(dBc)

± 20

DISTORTION

± 25

± 30

INTERMODULATION

ICQ =

100

± 45

200

f1 =

1490.0

MHz

± 35

± 40

400

600

VCC

= 26

Vdc

IMD,

± 50

f2 =

1490.1

MHz

0.1

100

Pout, OUTPUT POWER (WATTS) PEP

Figure 6. Intermodulation Distortion

versus Output Power

(dB)GAIN	14																	±10	(dBc)
	14																	±10

	13																	±15	DISTORTION
	13															Gpe		±15
																Gpe
	12																	±20	INTERMODULATION
G	12			ICQ = 200 mA								IMD						±20
G				ICQ = 200 mA
POWER	11																	±25
,
pe 10																		±30
pe 10																		±30
	9																	±35
	9			f1 = 1490.0 MHz														±35	IMD,
				f1 = 1490.0 MHz
				f2 = 1490.1 MHz
				f2 = 1490.1 MHz														±40
	8
	8	18		20				22	24			26				28
		18		20				22	24			26				28	30
							VCC, SUPPLY VOLTAGE (Vdc)
				Figure 5. Power Gain and Intermodulation
					Distortion versus Supply Voltage
	14
	14
	13
(dB)	13			ICQ	= 600	mA
				ICQ	= 600	mA
	12
GAIN
					400 mA

POWER
POWER	11				200 mA
,
pe 10
pe 10
G											V		=	26	Vdc
	9										V	CC	=	26	Vdc

			100		mA					f1 =			1490.0		MHz
			100		mA					f1 =			1490.0		MHz
	8										f2 =		1490.1		MHz
	8	0.1						1				10					100
		0.1						1				10					100

Pout, OUTPUT POWER (WATTS) PEP

Figure 7. Power Gain versus Output Power

MRF15060 MRF15060S	MOTOROLA RF DEVICE DATA
4

	13						50
	13			Gpe			50		(%)
				Gpe
GAIN(dB)	12						45
	12						45
	11						40		EFFICIENCY
POWER	11			η			40
				η
	10				VCC = 26 Vdc		35
								η,
,					ICQ = 200 mA
pe					Pout = 60 W (PEP)				VSWR
G									VSWR

	9						30		INPUT
	9			VSWR			30


	8						25
	1425	1450	1475	1500	1525	1550

f, FREQUENCY (MHz)

Figure 8. Performance in Broadband Circuit

		60
		50		FUNDAMENTAL
	(dBm)	40		FUNDAMENTAL
		40
		30
	POWER	30
		20
		10	3rd ORDER
	, OUTPUT	10	3rd ORDER
3.0		0
2.5		± 10				VCE = 26 Vdc
	out					I	= 3 A
2.0	P	± 20					C
2.0		± 20				f1 = 1490.0 MHz
						f1 = 1490.0 MHz
1.5		± 30				f2 = 1490.1 MHz
1.0		± 40	20	25	30	35	40	45	50
		15	20	25	30	35	40	45	50

Pin, INPUT POWER (dBm)

Figure 9. Class A Third Order Intercept Point

		8
	(Adc)	6
	CURRENT	6
	CURRENT	4
	COLLECTOR	4
	COLLECTOR	2
	,
	C
	I
		0

Tflange

= 75°C

Tflange = 100

°C

LIMITED

= 175

°C

BREAKDOWN

VCE, COLLECTOR SUPPLY VOLTAGE (Vdc)

Figure 10. DC Safe Operating Area

MOTOROLA RF DEVICE DATA	MRF15060 MRF15060S
	5

1400 MHz

1450

	1500	1400 MHz
	1550	1400 MHz
	1550
	1600	1450
Zin	1600	1500
Zin		1500
		ZOL*
		1550
		1600	Ω
		Zo = 10	Ω

VCC = 26 Vdc, ICQ = 200 mA, Pout = 60 Watts PEP

f	Zin(1)	ZOL*
MHz	Ohms	Ohms

1400	1.07 + j3.4	2.25 + j3.1

1450	1.04 + j3.0	2.37 + j2.4

1500	1.01 + j2.7	2.46 + j2.1

1550	0.99 + j2.3	2.54 + j1.4

1600	0.97 + j1.9	2.66 + j1.0

Zin(1)= Conjugate of fixture base impedance.

ZOL* = Conjugate of the optimum load impedance at

given output power, voltage, bias current and frequency.

Figure 11. Series Equivalent Input and Output Impedence

MRF15060 MRF15060S	MOTOROLA RF DEVICE DATA
6

				Q2	C14
C17	R1	D1	C12	C11	C13	R4
	R1	D1		C11	C13	R4
							C15
							C15
				C10			C16
	C18		R2	R3		B2
	C18					C9
				B1		C9
				B1		C8
		Q1	C7	C6		C8
		Q1	C7	C3
				C3
	TL1		C1	L1	W2	L2	TL4
	TL1		C1	W1	W2	C2	TL4
				TL2		TL3
				C4		C5
						C5
							MRF15060

Figure 12. MRF15060 Component Parts Layout

Table 1. Typical Common Emitter S±Parameters (VCC = 26 V)

ID = 3.0 A

f		S11			S21			S12			S22
MHz	\|S11\|		φ	\|S21\|		φ	\|S12\|		φ	\|S22\|		φ
1000	0.964		163	0.28		93	0.018		73	0.991		178

1050	0.958		162	0.30		87	0.018		76	0.989		178

1100	0.957		161	0.31		82	0.017		81	0.987		179

1150	0.956		160	0.34		76	0.022		73	0.982		179

1200	0.955		158	0.38		70	0.023		67	0.969		179

1250	0.953		157	0.42		62	0.022		57	0.956		180

1300	0.941		155	0.47		53	0.019		60	0.937		180

1350	0.922		154	0.55		43	0.015		64	0.915		-180

1400	0.920		153	0.67		28	0.013		66	0.891		-180

1450	0.901		152	0.80		6	0.012		71	0.880		-180

1500	0.903		151	0.83		-24	0.007		76	0.911		-179

1550	0.906		152	0.70		-54	0.008		89	0.954		-180

1600	0.913		153	0.51		-75	0.009		92	0.971		-180

1650	0.921		154	0.38		-89	0.010		95	0.973		-179

1700	0.946		154	0.29		-98	0.012		97	0.974		-179

1750	0.974		155	0.34		-107	0.014		105	0.976		-178

1800	0.968		154	0.19		-115	0.016		116	0.977		-178

1850	0.966		153	0.16		-121	0.018		138	0.978		-177

1900	0.947		152	0.14		-128	0.021		143	0.980		-177

1950	0.918		151	0.12		-138	0.027		151	0.982		-177

2000	0.912		150	0.09		-146	0.031		159	0.985		-176

MOTOROLA RF DEVICE DATA	MRF15060 MRF15060S
	7

				PACKAGE DIMENSIONS
		G								NOTES:
										1. DIMENSIONING AND TOLERANCING PER ANSI
			1								Y14.5M, 1982.
			1							2.	CONTROLLING DIMENSION: INCH.
										2.	CONTROLLING DIMENSION: INCH.
	R		±B±									INCHES		MILLIMETERS
	R		±B±								DIM	MIN	MAX	MIN	MAX
			3								DIM	MIN	MAX	MIN	MAX
			3								A	0.995	1.005	25.27	25.53
			2								B	0.380	0.390	9.65	9.91
			Q 2 PL								C	0.170	0.205	4.32	5.21
	K	D		0.25 (0.010) M		T	A		B M		D	0.455	0.465	11.56	11.81
	K	D						M			E	0.060	0.075	1.52	1.91
								M			E	0.060	0.075	1.52	1.91
											F	0.004	0.006	0.10	0.15
											G	0.800 BSC		20.32 BSC
											H	0.078	0.090	1.98	2.29
											K	0.117	0.137	2.97	3.48
		N									N	0.595	0.605	15.11	15.37
		N	F								Q	0.120	0.130	3.05	3.30
H	E		F								R	0.395	0.410	10.03	10.41
											R	0.395	0.410	10.03	10.41
			C
			C	±T±	PLANESEATING						STYLE 1:
											PIN 1. COLLECTOR
		±A±										2. BASE
		±A±										3. EMITTER

CASE 451±04

ISSUE D

	1
K	2

H E

±A±

	NOTES:
	1.	DIMENSIONING AND TOLERANCING PER ANSI
		Y14.5M, 1982.
±B±	2.	CONTROLLING DIMENSION: INCH.

F
C	±T±	SEATING
		PLANE

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.615	0.625	15.62	15.88
B	0.395	0.410	10.03	10.41
C	0.170	0.205	4.32	5.21
D	0.455	0.465	11.56	11.81
E	0.060	0.075	1.52	1.91
F	0.004	0.006	0.10	0.15
H	0.078	0.090	1.98	2.29
K	0.117	0.137	2.97	3.48
N	0.595	0.605	15.11	15.37

3	STYLE 1:
	PIN 1.	COLLECTOR
	2.	BASE
	3.	EMITTER

CASE 451A±01

ISSUE O

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, 6F Seibu±Butsuryu±Center,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447 or 602±303±5454	3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±81±3521±8315
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE 602±244±6609	ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

MRF15060 MRF15060S ◊	MOTOROLA RF DEVICEMRF15060/DDATA
8	MRF15060/D
8

Соседние файлы в папке СВЧ

#
06.01.2022146.77 Кб2mrf141grev2d.pdf
#
06.01.2022164.49 Кб2mrf141rev8.pdf
#
06.01.2022148.41 Кб2mrf148rev1.pdf
#
06.01.2022105.72 Кб2mrf1500rev6.pdf
#
06.01.2022162.56 Кб2mrf15030rev7.pdf
#
06.01.2022168.28 Кб2mrf15060rev0.pdf
#
06.01.2022211.27 Кб2mrf1507rev1.pdf
#
06.01.2022215.48 Кб2mrf15090rev0.pdf
#
06.01.2022152.11 Кб2mrf150rev8.pdf
#
06.01.2022160.65 Кб2mrf151grev8d.pdf
#
06.01.2022188.9 Кб2mrf151rev8.pdf