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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N5086/D

Amplifier Transistors

PNP Silicon

			COLLECTOR
					3
		2


		BASE

					1
				EMITTER
MAXIMUM RATINGS

Rating	Symbol	Value				Unit

Collector± Emitter Voltage	VCEO	50				Vdc
Collector± Base Voltage	VCBO	50				Vdc
Emitter± Base Voltage	VEBO	3.0				Vdc
Collector Current Ð Continuous	IC	50				mAdc
Total Device Dissipation @ TA = 25°C	PD	625				mW
Derate above 25°C		5.0				mW/°C

Total Device Dissipation @ TC = 25°C	PD	1.5				Watts
Derate above 25°C		12				mW/°C

Operating and Storage Junction	TJ, Tstg	± 55 to +150				°C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max				Unit

Thermal Resistance, Junction to Ambient	RqJA	200				°C/W
Thermal Resistance, Junction to Case	RqJC	83.3				°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

2N5086

2N5087*

*Motorola Preferred Device

2 3

CASE 29±04, STYLE 1 TO±92 (TO±226AA)

Characteristic	Symbol	Min	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage(1)	V(BR)CEO	50	Ð	Vdc
(IC = 1.0 mAdc, IB = 0)
Collector± Base Breakdown Voltage	V(BR)CBO	50	Ð	Vdc
(IC = 100 μAdc, IE = 0)
Collector Cutoff Current	ICBO	Ð	50	nAdc
(VCB = 35 Vdc, IE = 0)
Emitter Cutoff Current	IEBO	Ð	50	nAdc
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1996

2N5086	2N5087
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
	Characteristic		Symbol	Min	Max	Unit

ON CHARACTERISTICS

DC Current Gain			hFE			Ð
(IC = 100 μAdc, VCE = 5.0 Vdc)		2N5086		150	500
		2N5087		250	800
(IC = 1.0 mAdc, VCE = 5.0 Vdc)		2N5086		150	Ð
		2N5087		250	Ð
(IC = 10 mAdc, VCE = 5.0 Vdc)(1)		2N5086		150	Ð
		2N5087		250	Ð

Collector± Emitter Saturation Voltage			VCE(sat)	Ð	0.3	Vdc
(IC = 10 mAdc, IB = 1.0 mAdc)
Base ± Emitter On Voltage			VBE(on)	Ð	0.85	Vdc
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
SMALL± SIGNAL CHARACTERISTICS

Current± Gain Ð Bandwidth Product			fT	40	Ð	MHz
(IC = 500 μAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector±Base Capacitance			Ccb	Ð	4.0	pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Small±Signal Current Gain			hfe	150	600	Ð
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)		2N5086		150	600
		2N5087		250	900

Noise Figure			NF			dB
(IC = 20 μAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)		2N5086		Ð	3.0
		2N5087		Ð	2.0
(IC = 100 μAdc, VCE = 5.0 Vdc, RS = 3.0 kΩ, f = 1.0 kHz)		2N5086		Ð	3.0
		2N5087		Ð	2.0

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5086 2N5087

TYPICAL NOISE CHARACTERISTICS

								(VCE = ±5.0 Vdc, TA = 25°C)
	10											1.0
							BANDWIDTH = 1.0 Hz					7.0						BANDWIDTH = 1.0 Hz
	7.0							RS ≈ 0				5.0				IC = 1.0 mA			RS ≈ ∞
(nV)	5.0			IC = 10 μA							(pA)	3.0				IC = 1.0 mA
, NOISE VOLTAGE	5.0										,NOISE CURRENT	2.0
												2.0
					30 μA							1.0				300 μA
	3.0				100 μA							1.0
	3.0											0.7
												0.7				100	μ
					300 μA							0.5				100	A
	2.0	1.0 mA			300 μA							0.5
n											n	0.3				30 μA
e											I

												0.2				10 μA
																10 μA
	1.0											0.1
	10	20	50	100	200	500	1.0 k	2.0 k	5.0 k	10 k		10	20	50	100	200	500	1.0 k	2.0 k	5.0 k	10 k
				f, FREQUENCY (Hz)											f, FREQUENCY (Hz)

Figure 1. Noise Voltage

Figure 2. Noise Current

NOISE FIGURE CONTOURS

(VCE = ±5.0 Vdc, TA = 25°C)

1.0 M

(OHMS)

500 k

BANDWIDTH = 1.0 Hz

(OHMS)

500 k

BANDWIDTH = 1.0 Hz

200 k

100 k

RESISTANCE

50 k

RESISTANCE

50 k

20 k

0.5 dB

20 k

10 k

0.5 dB

5.0 k

SOURCE

1.0 dB

SOURCE

1.0 dB

2.0 k

1.0 k

2.0 dB

1.0 k

2.0 dB

500

3.0 dB

200

5.0 dB

100

200 300

500 700

1.0 k

100

200

300

500 700

1.0 k

IC, COLLECTOR CURRENT (μA)

Figure 3. Narrow Band, 100 Hz

Figure 4. Narrow Band, 1.0 kHz

	1.0 M
(OHMS)	500 k							10 Hz to 15.7 kHz
	200 k
	100 k
RESISTANCE	50 k
	20 k
	10 k			0.5 dB
	5.0 k			0.5 dB

SOURCE
	2.0 k							1.0 dB
	1.0 k								2.0 dB
,	500
S
S
R									3.0 dB
R
	200
	200								5.0 dB
	100								5.0 dB
	100	20	30	50	70	100	200	300	500	700	1.0 k
	10	20	30	50	70	100	200	300	500	700	1.0 k
				IC, COLLECTOR CURRENT (μA)

Figure 5. Wideband

Noise Figure is Defined as:
NF + 20 log10		en2 ) 4KTRS ) In 2RS2 1 2
		4KTRS

en	= Noise Voltage of the Transistor referred to the input. (Figure 3)
In	= Noise Current of the Transistor referred to the input. (Figure 4)
K	= Boltzman's Constant (1.38 x 10±23 j/°K)
T	= Temperature of the Source Resistance (°K)

RS = Source Resistance (Ohms)

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5086 2N5087

TYPICAL STATIC CHARACTERISTICS

	400										TJ = 125°C
											TJ = 125°C
GAIN	200											25°C
	200

CURRENT												± 55°C
CURRENT	100
, DC	100
, DC	80
FE	80
FE
h														MPS3906
	60													MPS3906
	60													VCE = 1.0 V
														VCE = 1.0 V
														VCE = 10 V
	40	0.005	0.01	0.02	0.03	0.05 0.07	0.1	0.2	0.3	0.5	0.7	1.0		3.0
	0.003	0.005	0.01	0.02	0.03	0.05 0.07	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100
								IC, COLLECTOR CURRENT (mA)

Figure 6. DC Current Gain

(VOLTS)	1.0							TA = 25°C
								TA = 25°C
								MPS3906
VOLTAGE	0.8							MPS3906
	0.8
	IC = 1.0 mA	10 mA			50 mA			100 mA
	IC = 1.0 mA	10 mA			50 mA			100 mA
, COLLECTOR±EMITTER	0.6
	0.4
	0.2

CE	0
V	0
	0.002 0.005 0.01 0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20
		IB, BASE CURRENT (mA)

Figure 7. Collector Saturation Region

	1.4	TJ = 25°C
	1.2	TJ = 25°C
	1.2
(VOLTS)	1.0
(VOLTS)	0.8
VOLTAGE	0.8	VBE(sat) @ IC/IB = 10
		VBE(sat) @ IC/IB = 10
	0.6		VBE(on)	@ VCE	= 1.0 V

V,
V,	0.4
	0.4
	0.2	VCE(sat) @ IC/IB = 10
		VCE(sat) @ IC/IB = 10
	0								50	100
	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100
			IC, COLLECTOR CURRENT (mA)

Figure 9. ªOnº Voltages

	100	TA = 25°C					IB = 400 μA
		TA = 25°C					IB = 400 μA
(mA)		PULSE WIDTH = 300 μs			350	μA
	80	DUTY CYCLE ≤		2.0%	350	μA
	80	DUTY CYCLE ≤		2.0%

CURRENT			300 μA				250	μ
							250	A
	60						200 μA

,COLLECTOR							150 μA
	40						100 μA
							100 μA
	20						50 μA
C	20
I
	0
	0	5.0	10	15	20	25	30	35	40

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 8. Collector Characteristics

(mV/°C)	1.6
(mV/°C)		*APPLIES for IC/IB ≤ hFE/2
		*APPLIES for IC/IB ≤ hFE/2
COEFFICIENTS	0.8
COEFFICIENTS		*qVC for VCE(sat)					25°C to 125°C
							25°C to 125°C

	0							± 55°C to 25°C
TEMPERATURE								± 55°C to 25°C
TEMPERATURE	0.8	qVB for VBE						± 55°C to 25°C
	0.8
							25°C to 125°C
	1.6
,
V
θ	2.4
	2.4	0.2	0.5	1.0	2.0	5.0	10	20	50	100
	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100

IC, COLLECTOR CURRENT (mA)

Figure 10. Temperature Coefficients

4	Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5086 2N5087

TYPICAL DYNAMIC CHARACTERISTICS

	500
	300								VCC = 3.0 V
	300								IC/IB = 10
	200								IC/IB = 10
	200									°
									TJ = 25 C
(ns)	100
(ns)	70
t, TIME	50
t, TIME	30
	30							tr
	20							tr
	10		td @ VBE(off) = 0.5 V
	10
	7.0
	5.0	2.0		5.0	7.0	10	20	30	50	70	100
	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100
				IC, COLLECTOR CURRENT (mA)

Figure 11. Turn±On Time

(MHz)	500
PRODUCT		TJ = 25°C
	300			VCE = 20 V

Ð BANDWIDTH	200					5.0 V
	200

, CURRENT±GAIN	100
	70
	50
T	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50
f

				IC, COLLECTOR CURRENT (mA)

Figure 13. Current±Gain Ð Bandwidth Product

	20							VCE = ±10 Vdc
								VCE = ±10 Vdc
	10							f = 1.0 kHz
Ω)	7.0					MPS3906		TA = 25°C
(k	7.0					MPS3906
(k	5.0					hfe ≈ 200
IMPEDANCE	5.0					hfe ≈ 200
	3.0					@ IC = ±1.0 mA
	2.0		MPS3905
			MPS3905
			hfe ≈ 100
, INPUT	1.0		hfe ≈ 100
	1.0		@ IC = ±1.0 mA
	0.7
ie	0.5
h

	0.3
	0.2							20	50	100
	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100

IC, COLLECTOR CURRENT (mA)

Figure 15. Input Impedance

	1000						VCC = ±3.0 V
	700						VCC = ±3.0 V
	500						IC/IB = 10
	300				ts		IB1 = IB2
	300				ts		°
							TJ = 25 C
(ns)	200
(ns)
TIME	100
TIME	70
t,	70
	50				tf
	30				tf
	30
	20
	10	±2.0	±3.0
	±1.0	±2.0	±3.0	±5.0 ±7.0 ±10	±20	±30	±50 ±70 ±100
			IC, COLLECTOR CURRENT (mA)

Figure 12. Turn±Off Time

	10
	7.0								TJ = 25°C
	7.0
							Cib
(pF)	5.0
(pF)
CAPACITANCE	3.0
CAPACITANCE	2.0								Cob
C,	2.0								Cob
	1.0
	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50
				VR, REVERSE VOLTAGE (VOLTS)

Figure 14. Capacitance

	200	VCE = 10 Vdc
mhos)		VCE = 10 Vdc
	100	f = 1.0 kHz
	70	TA = 25°C
m	70	TA = 25°C
(	50
ADMITTANCE	50
	30	MPS3906
	30	hfe ≈ 200
	20	hfe ≈ 200				MPS3905
	20	@ IC = 1.0 mA				hfe ≈ 100
		@ IC = 1.0 mA				hfe ≈ 100
,OUTPUT	10					@ IC = 1.0 mA
	10
	7.0
	5.0
oe	5.0
oe
h	3.0
	3.0
	2.0							20	50	100
	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100
				IC, COLLECTOR CURRENT (mA)

Figure 16. Output Admittance

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5086			2N5087
		1.0
TRANSIENT THERMAL RESISTANCE		0.7	D = 0.5
		0.5	D = 0.5
		0.5
		0.3		0.2
	(NORMALIZED)	0.2		0.2
		0.2
		0.1		0.1
		0.1														FIGURE 19
		0.07		0.05												FIGURE 19		DUTY CYCLE, D = t1/t2
		0.07		0.05										P(pk)				DUTY CYCLE, D = t1/t2
		0.05		0.02										P(pk)				D CURVES APPLY FOR POWER
		0.03		0.02												t1		PULSE TRAIN SHOWN
		0.03	0.01															READ TIME AT t1 (SEE AN±569)
		0.02																READ TIME AT t1 (SEE AN±569)
							SINGLE PULSE									t2		ZθJA(t) = r(t) •RθJA
							SINGLE PULSE									t2		ZθJA(t) = r(t) •RθJA
r(t)																		TJ(pk) ± TA = P(pk) ZθJA(t)
		0.01																TJ(pk) ± TA = P(pk) ZθJA(t)
		0.01
		0.01	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200	500	1.0 k	2.0 k	5.0 k 10 k	20 k	50 k	100 k
												t, TIME (ms)

Figure 17. Thermal Response

	400				1.0 ms		10 μs
							10 μs

(mA)	200					100 μs
						100 μs

CURRENT	100			TC = 25°C			1.0 s
	60		TA = 25°C		dc
	60
	40				dc
,COLLECTOR	40				dc
	20	TJ = 150°C
	10	CURRENT LIMIT
C	10	CURRENT LIMIT
I		THERMAL LIMIT
	6.0	THERMAL LIMIT
	6.0	SECOND BREAKDOWN LIMIT
	4.0	SECOND BREAKDOWN LIMIT
	4.0	4.0	6.0	8.0	10	20	40
	2.0	4.0	6.0	8.0	10	20	40
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

The safe operating area curves indicate IC±VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve.

The data of Figure 18 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty

cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal

limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.

Figure 18. Active±Region Safe Operating Area

	104
	103	VCC = 30 V
(nA)	103
(nA)					ICEO
CURRENT	102				ICEO
	102
	101
, COLLECTOR	101							ICBO
								AND
	100						ICEX @ VBE(off) = 3.0 V

C	10±1
I	10±1
	10±2	± 20	0	+ 20	+ 40	+ 60	+ 80	+ 100 + 120	+ 140	+ 160
	± 40	± 20	0	+ 20	+ 40	+ 60	+ 80	+ 100 + 120	+ 140	+ 160
				TJ, JUNCTION TEMPERATURE (°C)

Figure 19. Typical Collector Leakage Current

DESIGN NOTE: USE OF THERMAL RESPONSE DATA

A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of

Figure 17 was calculated for various duty cycles.

To find ZθJA(t), multiply the value obtained from Figure 17 by the steady state value RθJA.

Example:

The MPS3905 is dissipating 2.0 watts peak under the following conditions:

t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)

Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22.

The peak rise in junction temperature is therefore

T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN±569.

6	Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5086 2N5087

PACKAGE DIMENSIONS

	A	B
		B
	R
		P
		L
	SEATING	F
	PLANE	K
		D
	X X	J
		G
	H	SECTION X±X
	V	SECTION X±X
	V	C
	1	N
		N

CASE 029±04 (TO±226AA)

ISSUE AD

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.175	0.205	4.45	5.20
B	0.170	0.210	4.32	5.33
C	0.125	0.165	3.18	4.19
D	0.016	0.022	0.41	0.55
F	0.016	0.019	0.41	0.48
G	0.045	0.055	1.15	1.39
H	0.095	0.105	2.42	2.66
J	0.015	0.020	0.39	0.50
K	0.500	±±±	12.70	±±±
L	0.250	±±±	6.35	±±±
N	0.080	0.105	2.04	2.66
P	±±±	0.100	±±±	2.54
R	0.115	±±±	2.93	±±±
V	0.135	±±±	3.43	±±±

STYLE 1:

PIN 1. EMITTER

2.BASE

3.COLLECTOR

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5086 2N5087

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA/EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
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◊

2N5086/D

*2N5086/D*

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