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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N6426/D

Darlington Transistors

NPN Silicon

			COLLECTOR 3
		BASE



			2
			2

				EMITTER 1
MAXIMUM RATINGS

Rating	Symbol	Value			Unit

Collector± Emitter Voltage	VCEO	40			Vdc
Collector± Base Voltage	VCBO	40			Vdc
Emitter± Base Voltage	VEBO	12			Vdc
Collector Current Ð Continuous	IC	500			mAdc
Total Device Dissipation @ TA = 25°C	PD	625			mW
Derate above 25°C		5.0		mW/°C

Total Device Dissipation @ TC = 25°C	PD	1.5			Watts
Derate above 25°C		12		mW/°C

Operating and Storage Junction	TJ, Tstg	± 55 to +150			°C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max			Unit

Thermal Resistance, Junction to	RqJA	200			°C/W
Ambient

Thermal Resistance, Junction to Case	RqJC	83.3			°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

2N6426*

2N6427

*Motorola Preferred Device

2 3

CASE 29±04, STYLE 1 TO±92 (TO±226AA)

Characteristic	Symbol	Min	Typ	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage (1)	V	40	Ð	Ð	Vdc
(IC = 10 mAdc, VBE = 0)	(BR)CEO
(IC = 10 mAdc, VBE = 0)
Collector± Base Breakdown Voltage	V(BR)CBO	40	Ð	Ð	Vdc
(IC = 100 mAdc, IE = 0)
Emitter± Base Breakdown Voltage	V(BR)EBO	12	Ð	Ð	Vdc
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current	ICES	Ð	Ð	1.0	mAdc
(VCE = 25 Vdc, IB = 0)
Collector Cutoff Current	ICBO	Ð	Ð	50	nAdc
(VCB= 30 Vdc, IE = 0)
Emitter Cutoff Current	IEBO	Ð	Ð	50	nAdc
(VEB= 10 Vdc, IC = 0)
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1996

2N6426

2N6427

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain(1)

hFE

20,000

200,000

(IC = 10 mAdc, VCE = 5.0 Vdc)

2N6426

2N6427

10,000

100,000

(IC = 100 mAdc, VCE = 5.0 Vdc)

2N6426

30,000

300,000

2N6427

20,000

200,000

(IC = 500 mAdc, VCE = 5.0 Vdc)

2N6426

20,000

200,000

2N6427

14,000

140,000

Collector± Emitter Saturation Voltage

VCE(sat)

Vdc

(IC = 50 mAdc, IB = 0.5 mAdc)

0.71

1.2

(IC = 500 mAdc, IB = 0.5 mAdc

0.9

1.5

Base ± Emitter Saturation Voltage

VBE(sat)

1.52

2.0

Vdc

(IC = 500 mAdc, IB = 0.5 mAdc)

Base ± Emitter On Voltage

VBE(on)

1.24

1.75

Vdc

(IC = 50 mAdc, VCE = 5.0 Vdc)

SMALL± SIGNAL CHARACTERISTICS

Output Capacitance

Cobo

5.4

7.0

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

Cibo

(VEB = 1.0 Vdc, IC = 0, f = 1.0 MHz)

Input Impedance

hie

kΩ

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

2N6426

100

2000

2N6427

1000

Small±Signal Current Gain

hfe

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

2N6426

20,000

2N6427

10,000

Current± Gain Ð High Frequency

|hfe|

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)

2N6426

1.5

2.4

2N6427

1.3

2.4

Output Admittance

hoe

1000

mmhos

(IC = 10 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

Noise Figure

3.0

(IC = 1.0 mAdc, VCE = 5.0 Vdc, RS = 100 kΩ, f = 1.0 kHz)

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N6426 2N6427

NOISE CHARACTERISTICS

							(VCE = 5.0 Vdc, TA = 25°C)
	500					BANDWIDTH = 1.0 Hz					2.0
						BANDWIDTH = 1.0 Hz										BANDWIDTH = 1.0 Hz
	200					RS ≈ 0					1.0
(nV)	200									(pA)	0.7
											0.7
											0.5				IC = 1.0 mA
, NOISE VOLTAGE	100									,NOISE CURRENT	0.5
	100										0.3
							10	μ			0.3
							10	A
	50										0.2
							100 μA				0.1				100 μA
	20														100 μA
	20
n										n	0.07
e						IC = 1.0 mA				i	0.07				10	μA
						IC = 1.0 mA					0.05				10	μA
	10										0.05
	10										0.03
											0.03
	5.0										0.02
	10	20	50	100 200	500	1 k 2 k	5 k 10 k 20 k		50 k 100 k		10	20	50	100 200	500	1 k 2 k	5 k	10 k 20 k	50 k 100 k
					f, FREQUENCY (Hz)										f, FREQUENCY (Hz)

Figure 2. Noise Voltage

Figure 3. Noise Current

(nV)	200											14
(nV)																	BANDWIDTH = 10 Hz TO 15.7 kHz
VOLTAGE		BANDWIDTH = 10 Hz TO 15.7 kHz										12
	100	BANDWIDTH = 10 Hz TO 15.7 kHz									(dB)
	100											10
	70	IC = 10 μA										10
																	10 μA
TOTAL WIDEBAND NOISE											NF, NOISE FIGURE						10 μA
	50											8.0
	50														100 μA
												6.0			100 μA
	30	100 μA										6.0
	30	100 μA
	20											4.0	IC = 1.0 mA
	20
		1.0 mA										2.0
,
T
V	10											0
	10	2.0	5.0	10	20	50	100	200	500	100		0	2.0	5.0	10	20	50	100	200	500	100
	1.0	2.0	5.0	10	20	50	100	200	500	100		1.0	2.0	5.0	10	20	50	100	200	500	100
							Ω			0								Ω			0
				RS, SOURCE RESISTANCE (k				)							RS, SOURCE RESISTANCE (k				)

Figure 4. Total Wideband Noise Voltage

Figure 5. Wideband Noise Figure

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N6426 2N6427

SMALL±SIGNALCHARACTERISTICS

	20
	10							TJ = 25°C
(pF)	10
(pF)
C, CAPACITANCE	7.0							Cibo
	5.0								Cobo
	3.0
	3.0
	2.0
	0.04	0.1	0.2	0.4	1.0	2.0	4.0	10	20	40

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Capacitance

	4.0	VCE = 5.0 V
GAIN		VCE = 5.0 V
		f = 100 MHz
	2.0	TJ = 25°C
CURRENT	2.0	TJ = 25°C
CURRENT	1.0
SMALL±SIGNAL	1.0
	0.8
	0.6
	0.4
\|,	0.4
\|,
fe
\|h
	0.2
	0.5	1.0	2.0	0.5	10	20	50	100	200	500

IC, COLLECTOR CURRENT (mA)

Figure 7. High Frequency Current Gain

	200 k	TJ = 125°C										(VOLTS)	3.0
	100 k	TJ = 125°C										(VOLTS)											TJ = 25°C
	100 k											VOLTAGE	2.5
CURRENT GAIN	70 k												2.5	IC =	10 mA	50 mA			250 mA		500 mA
	70 k			25°C
	50 k
	50 k
	30 k												2.0
	30 k
	20 k
													1.5
, DC	10 k											COLLECTOR±EMITTER	1.5
, DC	10 k
FE	7.0 k			± 55°C
h	7.0 k
	5.0 k												1.0
	5.0 k							VCE = 5.0 V					1.0
	3.0 k							VCE = 5.0 V
												,
												CE
	2.0 k											CE	0.5
												V

	5.0	7.0	10	20	30	50	70	100	200	300	500		0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200	500 1000
				IC, COLLECTOR CURRENT (mA)													IB, BASE CURRENT (μA)

Figure 8. DC Current Gain

Figure 9. Collector Saturation Region

	1.6
		TJ = 25°C
	1.4
(VOLTS)		VBE(sat) @ IC/IB = 1000
	1.2

V, VOLTAGE		VBE(on) @ VCE = 5.0 V
	1.0

	0.8	VCE(sat) @ IC/IB = 1000
		VCE(sat) @ IC/IB = 1000
	0.6
	5.0	7.0	10	20	30	50	70	100 200 300	500
				IC, COLLECTOR CURRENT (mA)

Figure 10. ªOnº Voltages

(mV/°C)	± 1.0	*APPLIES FOR IC/IB ≤ hFE/3.0						25°C TO 125°C
		*APPLIES FOR IC/IB ≤ hFE/3.0						25°C TO 125°C
	± 2.0	*RqVC FOR VCE(sat)
COEFFICIENTS	± 2.0	*RqVC FOR VCE(sat)
									± 55°C TO 25°C
	± 3.0
								25°C TO 125°C
, TEMPERATURE								25°C TO 125°C
	± 4.0
		qVB FOR VBE
	± 5.0							± 55°C TO 25°C

θV
R	± 6.0
	± 6.0
	5.0	7.0	10	20	30	50	70	100	200	300	500
				IC, COLLECTOR CURRENT (mA)

Figure 11. Temperature Coefficients

4	Motorola Small±Signal Transistors, FETs and Diodes Device Data

															2N6426		2N6427
		1.0
		0.7	D = 0.5
		0.5	D = 0.5
	RESISTANCE (NORMALIZED)	0.5	0.2
r(t), TRANSIENT THERMAL		0.3	0.2
		0.3
		0.2		0.05	SINGLE PULSE
			0.1		SINGLE PULSE


		0.1
		0.07				SINGLE PULSE
		0.05
		0.03										ZθJC(t) = r(t) •RθJC		TJ(pk) ± TC = P(pk) ZθJC(t)
		0.02										ZθJA(t) = r(t) •RθJA		TJ(pk) ± TA = P(pk) ZθJA(t)
		0.01						10	20	50	100	200	500	1.0 k	2.0 k	5.0 k		10 k
		0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200	500	1.0 k	2.0 k	5.0 k		10 k

t, TIME (ms)

Figure 12. Thermal Response

	1.0 k									FIGURE A
	700							1.0 ms		FIGURE A
	700							1.0 ms
(mA)	500									tP
(mA)	300					TC = 25°C

CURRENT		TA = 25°C						100 μs		PP		PP
CURRENT	200						1.0 s


COLLECTOR,	100
COLLECTOR,	30
	70
	50									t1
										t1
C	20			CURRENT LIMIT
I				THERMAL LIMIT						1/f
				THERMAL LIMIT						1/f
				SECOND BREAKDOWN LIMIT								f + t1
	10									DUTY CYCLE + t	1	f + t1
	0.4	0.6	1.0	2.0	4.0	6.0	10	20	40		1	tP
	0.4	0.6	1.0	2.0	4.0	6.0	10	20	40			tP
			VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)							PEAK PULSE POWER = PP

Figure 13. Active Region Safe Operating Area

Design Note: Use of Transient Thermal Resistance Data

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N6426 2N6427

PACKAGE DIMENSIONS

	A	B
		B
	R
		P
		L
	SEATING	F
	PLANE	K
		D
	X X	J
		G
	H	SECTION X±X
	V	SECTION X±X
	V	C
	1	N
		N

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.175	0.205	4.45	5.20
B	0.170	0.210	4.32	5.33
C	0.125	0.165	3.18	4.19
D	0.016	0.022	0.41	0.55
F	0.016	0.019	0.41	0.48
G	0.045	0.055	1.15	1.39
H	0.095	0.105	2.42	2.66
J	0.015	0.020	0.39	0.50
K	0.500	±±±	12.70	±±±
L	0.250	±±±	6.35	±±±
N	0.080	0.105	2.04	2.66
P	±±±	0.100	±±±	2.54
R	0.115	±±±	2.93	±±±
V	0.135	±±±	3.43	±±±

CASE 029±04 (TO±226AA)

ISSUE AD

STYLE 1:

PIN 1. EMITTER

2.BASE

3.COLLECTOR

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:
USA/EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
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	◊	2N6426/D

*2N6426/D*

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