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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N3903/D

General Purpose Transistors

NPN Silicon

 

 

 

 

COLLECTOR

 

 

 

 

3

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BASE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

EMITTER

MAXIMUM RATINGS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rating

Symbol

Value

 

Unit

 

 

 

 

 

 

 

 

Collector± Emitter Voltage

VCEO

40

 

 

Vdc

Collector± Base Voltage

VCBO

60

 

 

Vdc

Emitter± Base Voltage

VEBO

6.0

 

 

Vdc

Collector Current Ð Continuous

IC

200

 

 

mAdc

Total Device Dissipation @ TA = 25°C

PD

625

 

 

mW

Derate above 25°C

 

5.0

 

mW/°C

 

 

 

 

 

 

 

 

Total Device Dissipation @ TC = 25°C

PD

1.5

 

 

Watts

Derate above 25°C

 

12

 

mW/°C

 

 

 

 

 

 

 

 

Operating and Storage Junction

TJ, Tstg

± 55 to +150

 

°C

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS*

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

Max

 

Unit

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to Ambient

RqJA

200

 

 

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

 

 

°C/W

*Indicates Data in addition to JEDEC Requirements.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

2N3903

2N3904*

*Motorola Preferred Device

1

2 3

CASE 29±04, STYLE 1 TO±92 (TO±226AA)

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

Collector± Emitter Breakdown Voltage (1)

V

40

Ð

Vdc

(IC = 1.0 mAdc, IB = 0)

(BR)CEO

 

 

 

 

 

 

 

Collector± Base Breakdown Voltage

V(BR)CBO

60

Ð

Vdc

(IC = 10 mAdc, IE = 0)

 

 

 

 

Emitter± Base Breakdown Voltage

V(BR)EBO

6.0

Ð

Vdc

(IE = 10 mAdc, IC = 0)

 

 

 

 

Base Cutoff Current

IBL

Ð

50

nAdc

(VCE = 30 Vdc, VEB = 3.0 Vdc)

 

 

 

 

Collector Cutoff Current

ICEX

Ð

50

nAdc

(VCE = 30 Vdc, VEB = 3.0 Vdc)

 

 

 

 

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

 

 

 

 

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola, Inc. 1996

2N3903

2N3904

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

 

 

 

 

 

 

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain(1)

 

 

hFE

20

Ð

Ð

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

2N3903

 

 

 

 

 

2N3904

 

40

Ð

 

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

2N3903

 

35

Ð

 

 

 

 

2N3904

 

70

Ð

 

(IC = 10 mAdc, VCE = 1.0 Vdc)

2N3903

 

50

150

 

 

 

 

2N3904

 

100

300

 

(IC = 50 mAdc, VCE = 1.0 Vdc)

2N3903

 

30

Ð

 

 

 

 

2N3904

 

60

Ð

 

(IC = 100 mAdc, VCE = 1.0 Vdc)

2N3903

 

15

Ð

 

 

 

 

2N3904

 

30

Ð

 

 

 

 

 

 

 

 

Collector± Emitter Saturation Voltage(1)

 

VCE(sat)

Ð

0.2

Vdc

(IC = 10 mAdc, IB = 1.0 mAdc)

 

 

 

(IC = 50 mAdc, IB = 5.0 mAdc

 

 

Ð

0.3

 

Base ± Emitter Saturation Voltage(1)

 

VBE(sat)

0.65

0.85

Vdc

(IC = 10 mAdc, IB = 1.0 mAdc)

 

 

 

(IC = 50 mAdc, IB = 5.0 mAdc)

 

 

Ð

0.95

 

SMALL± SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

Current± Gain Ð Bandwidth Product

 

fT

250

Ð

MHz

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

2N3903

 

 

 

 

 

2N3904

 

300

Ð

 

 

 

 

 

 

 

 

Output Capacitance

 

 

Cobo

Ð

4.0

pF

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

 

 

 

 

 

Input Capacitance

 

 

Cibo

Ð

8.0

pF

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

 

 

 

 

 

Input Impedance

 

 

hie

1.0

8.0

k Ω

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

2N3903

 

 

 

 

 

2N3904

 

1.0

10

 

 

 

 

 

 

 

 

Voltage Feedback Ratio

 

hre

0.1

5.0

X 10± 4

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

2N3903

 

 

 

 

 

2N3904

 

0.5

8.0

 

 

 

 

 

 

 

 

Small±Signal Current Gain

 

hfe

50

200

Ð

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

2N3903

 

 

 

 

 

2N3904

 

100

400

 

 

 

 

 

 

 

 

Output Admittance

 

 

hoe

1.0

40

mmhos

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

 

 

 

 

 

Noise Figure

 

 

NF

 

 

dB

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz)

2N3903

 

Ð

6.0

 

 

 

 

2N3904

 

Ð

5.0

 

 

 

 

 

 

 

 

SWITCHING CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Delay Time

 

(VCC = 3.0 Vdc, VBE = 0.5 Vdc,

 

td

Ð

35

ns

Rise Time

 

IC = 10 mAdc, IB1 = 1.0 mAdc)

 

tr

Ð

35

ns

Storage Time

(VCC = 3.0 Vdc, IC = 10 mAdc,

2N3903

ts

Ð

175

ns

 

 

IB1 = IB2 = 1.0 mAdc)

2N3904

 

Ð

200

 

Fall Time

 

 

 

tf

Ð

50

ns

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

 

 

 

 

 

2

Motorola Small±Signal Transistors, FETs and Diodes Device Data

 

 

 

 

 

 

2N3903

2N3904

 

+3 V

 

10 < t1 < 500 ms

t1

 

+3 V

 

DUTY CYCLE = 2%

 

+10.9 V

 

 

300 ns

+10.9 V

 

DUTY CYCLE = 2%

 

 

 

275

 

 

275

 

 

 

 

 

 

10 k

 

0

 

10 k

 

 

± 0.5 V

 

 

 

 

 

 

 

CS < 4 pF*

 

 

CS < 4 pF*

 

< 1 ns

 

1N916

 

 

 

± 9.1 V′

 

< 1 ns

 

 

 

 

 

 

 

 

 

 

* Total shunt capacitance of test jig and connectors

 

 

 

Figure 1. Delay and Rise Time

 

 

 

Figure 2. Storage and Fall Time

 

 

Equivalent Test Circuit

 

 

 

Equivalent Test Circuit

 

TYPICAL TRANSIENT CHARACTERISTICS

 

10

 

 

 

 

 

 

 

 

 

 

 

 

7.0

 

 

 

 

 

 

 

 

 

 

 

(pF)

5.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CAPACITANCE

3.0

 

 

 

 

 

Cibo

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

Cobo

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

30

40

 

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0 7.0 10

20

 

 

 

 

REVERSE BIAS VOLTAGE (VOLTS)

 

 

 

Figure 3. Capacitance

TJ = 25°C

 

 

 

 

 

 

 

 

 

 

TJ = 125°C

 

 

 

 

 

 

 

 

 

 

 

5000

 

 

 

 

 

 

 

 

 

 

 

3000

VCC = 40 V

 

 

 

 

 

 

 

 

 

IC/IB = 10

 

 

 

 

 

 

 

 

 

2000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(pC)

1000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Q, CHARGE

700

 

 

 

 

 

 

 

 

 

 

500

 

 

 

 

 

 

 

 

 

 

300

 

 

 

 

QT

 

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

QA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

70

 

 

 

 

 

 

 

 

 

 

 

50

2.0

3.0

5.0 7.0

10

20

30

50

70

100

200

 

1.0

IC, COLLECTOR CURRENT (mA)

Figure 4. Charge Data

Motorola Small±Signal Transistors, FETs and Diodes Device Data

3

2N3903

2N3904

 

 

 

 

 

 

 

 

500

 

 

 

 

 

 

 

 

 

500

 

300

 

 

 

 

 

 

IC/IB = 10

 

300

 

 

 

 

 

 

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

200

 

100

 

 

 

 

 

 

 

 

(ns)

100

 

70

 

 

 

 

 

tr @ VCC = 3.0 V

70

TIME (ns)

 

 

 

 

 

RISE TIME

50

 

 

 

 

 

 

 

 

50

30

 

 

 

 

 

 

 

40 V

30

20

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

r

 

 

 

 

 

 

 

 

 

t

 

10

 

 

 

 

 

 

 

15 V

 

10

 

 

 

 

 

 

 

 

2.0 V

 

 

7

 

 

 

td @ VOB = 0 V

 

 

 

7

 

 

 

 

 

 

 

 

 

5

2.0

3.0

5.0 7.0 10

20

30

50

70

100

200

5

 

1.0

 

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

 

 

 

 

 

 

 

 

 

VCC = 40 V

 

 

 

 

 

 

 

 

 

IC/IB = 10

 

1.0

2.0

3.0

5.0

7.0 10

20

30

50

70

100

200

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

Figure 5. Turn ± On Time

Figure 6. Rise Time

 

500

 

 

 

 

 

 

 

 

t′ = t

± 1/

t

 

 

 

 

 

 

 

 

 

 

 

300

 

 

 

 

 

 

 

 

s

s

8

f

 

IC/IB = 20

 

IC/IB = 10

 

 

 

IB1 = IB2

 

 

200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(ns)

100

 

 

 

 

 

 

 

 

 

 

 

 

TIME

 

 

 

 

 

 

 

 

 

 

 

 

70

 

 

 

 

 

 

 

IC/IB = 20

 

 

50

 

 

 

 

 

 

 

 

 

STORAGE

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

IC/IB = 10

 

20

 

 

 

 

 

 

 

 

 

 

 

 

s′,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

7

 

 

 

 

 

 

 

 

 

 

 

 

 

5

1.0

2.0

3.0

5.0

7.0 10

20

30

50

70

100

200

 

 

 

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

 

 

500

 

 

 

 

 

 

 

 

 

 

 

300

 

 

 

 

 

 

 

VCC = 40 V

 

 

200

 

 

 

 

 

 

 

IB1 = IB2

 

 

 

 

 

 

IC/IB = 20

 

 

 

 

(ns)

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

TIME

70

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

, FALL

 

 

 

 

 

 

 

 

 

 

30

 

 

IC/IB = 10

 

 

 

 

 

 

f

 

 

 

 

 

 

 

 

 

 

t

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

7

 

 

 

 

 

 

 

 

 

 

 

5

2.0

3.0

5.0

7.0 10

20

30

50

70

100

200

 

1.0

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

Figure 7. Storage Time

Figure 8. Fall Time

 

 

 

 

 

 

TYPICAL AUDIO SMALL±SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

NOISE FIGURE VARIATIONS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

 

 

 

 

 

 

 

12

 

 

 

 

 

 

 

 

 

 

14

 

 

 

 

 

 

 

 

 

 

 

 

SOURCE RESISTANCE = 200 W

 

 

 

 

 

 

f = 1.0 kHz

IC = 1.0 mA

 

 

 

 

 

 

10

 

IC = 1.0 mA

 

 

 

 

 

 

 

12

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(dB)

8

 

 

SOURCE RESISTANCE = 200 W

 

 

 

(dB)

10

 

IC = 0.5 mA

 

 

 

 

 

 

FIGURE

 

 

 

 

 

FIGURE

 

 

 

 

 

 

 

 

IC = 50 mA

 

 

 

IC = 0.5 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOISE

6

 

 

 

SOURCE RESISTANCE = 1.0 k

 

NOISE

6

 

 

 

 

 

 

IC = 100 mA

 

 

 

 

 

IC = 50 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NF,

4

 

 

 

 

 

 

 

 

 

NF,

4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

SOURCE RESISTANCE = 500 W

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

0

IC = 100 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

0.4

1.0

2.0

4.0

10

20

40

100

 

0

0.2

0.4

1.0

2.0

4.0

10

20

40

100

 

0.1

 

0.1

 

 

 

 

f, FREQUENCY (kHz)

 

 

 

 

 

 

RS, SOURCE RESISTANCE (k OHMS)

 

 

Figure 9.

Figure 10.

4

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N3903 2N3904

h PARAMETERS

(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)

 

300

 

 

 

 

 

 

 

 

GAIN

200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, CURRENT

100

 

 

 

 

 

 

 

 

70

 

 

 

 

 

 

 

 

fe

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

30

0.2

0.3

0.5

1.0

2.0

3.0

5.0

10

 

0.1

IC, COLLECTOR CURRENT (mA)

Figure 11. Current Gain

 

100

 

 

 

 

 

 

 

 

mhos)

50

 

 

 

 

 

 

 

 

m

 

 

 

 

 

 

 

 

 

(

 

 

 

 

 

 

 

 

 

ADMITTANCE

20

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

, OUTPUT

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

oe

 

 

 

 

 

 

 

 

 

h

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

10

 

0.1

IC, COLLECTOR CURRENT (mA)

Figure 12. Output Admittance

 

20

 

 

 

 

 

 

 

 

(k OHMS)

10

 

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

 

 

IMPEDANCE

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, INPUT

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ie

0.5

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

0.2

0.3

0.5

1.0

2.0

3.0

5.0

10

 

0.1

IC, COLLECTOR CURRENT (mA)

Figure 13. Input Impedance

10±4 )

10

 

 

 

 

 

 

 

 

7.0

 

 

 

 

 

 

 

 

(X

5.0

 

 

 

 

 

 

 

 

RATIO

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FEEDBACK

3.0

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, VOLTAGE

1.0

 

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

 

 

re

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

0.5

0.2

0.3

0.5

1.0

2.0

3.0

5.0

10

 

0.1

IC, COLLECTOR CURRENT (mA)

Figure 14. Voltage Feedback Ratio

TYPICAL STATIC CHARACTERISTICS

(NORMALIZED)

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = +125°C

 

 

 

 

 

 

 

 

V

= 1.0 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE

 

1.0

 

 

 

 

 

+25°C

 

 

 

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GAIN

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

± 55°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,DC CURRENT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

 

0.1

 

 

 

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

 

 

 

Figure 15. DC Current Gain

Motorola Small±Signal Transistors, FETs and Diodes Device Data

5

2N3903

2N3904

 

 

 

 

 

 

 

 

 

 

 

 

 

(VOLTS)

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

VOLTAGE

0.8

IC = 1.0 mA

 

 

10 mA

 

 

30 mA

 

 

 

 

100 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

EMITTER

0.6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, COLLECTOR

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

 

0.01

 

 

 

 

 

 

 

IB, BASE CURRENT (mA)

 

 

 

 

 

 

 

Figure 16. Collector Saturation Region

 

1.2

 

 

 

 

 

 

1.0

 

 

TJ = 25°C

 

 

 

VBE(sat) @ IC/IB =10

 

 

1.0

 

 

 

 

0.5

V, VOLTAGE (VOLTS)

0.8

 

 

 

 

 

 

0

 

 

 

 

 

VBE @ VCE =1.0 V

0.6

 

 

 

 

 

 

± 0.5

0.4

 

 

 

 

 

 

± 1.0

 

 

 

 

VCE(sat) @ IC/IB =10

 

(mV/COEFFICIENTC)°

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

± 1.5

 

0

2.0

5.0

10

20

50

100

± 2.0

 

1.0

200

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

 

 

 

 

 

 

+25°C TO +125°C

 

 

 

 

qVC FOR VCE(sat)

 

 

 

 

 

 

 

 

 

 

 

 

± 55°C TO +25°C

 

 

 

 

 

 

 

 

± 55°C TO +25°C

 

 

 

 

 

 

 

 

+25°C TO +125°C

 

 

 

qVB FOR VBE(sat)

 

 

 

 

 

 

0

20

40

60

80

100

120

140

160

180

200

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

Figure 17. ªONº Voltages

Figure 18. Temperature Coefficients

6

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N3903 2N3904

PACKAGE DIMENSIONS

A

B

 

R

 

 

P

 

L

SEATING

F

PLANE

K

 

D

X X

J

 

G

H

SECTION X±X

V

C

1

N

 

N

CASE 029±04 (TO±226AA)

ISSUE AD

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.175

0.205

4.45

5.20

B

0.170

0.210

4.32

5.33

C

0.125

0.165

3.18

4.19

D

0.016

0.022

0.41

0.55

F

0.016

0.019

0.41

0.48

G

0.045

0.055

1.15

1.39

H

0.095

0.105

2.42

2.66

J

0.015

0.020

0.39

0.50

K

0.500

±±±

12.70

±±±

L

0.250

±±±

6.35

±±±

N

0.080

0.105

2.04

2.66

P

±±±

0.100

±±±

2.54

R

0.115

±±±

2.93

±±±

V

0.135

±±±

3.43

±±±

STYLE 1:

PIN 1. EMITTER

2.BASE

3.COLLECTOR

Motorola Small±Signal Transistors, FETs and Diodes Device Data

7

2N3903 2N3904

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