MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N4410/D
Amplifier Transistor
NPN Silicon
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COLLECTOR |
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3 |
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BASE |
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1 |
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EMITTER |
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MAXIMUM RATINGS |
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Rating |
Symbol |
Value |
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Collector± Emitter Voltage |
VCEO |
80 |
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Vdc |
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Collector± Base Voltage |
VCBO |
120 |
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Vdc |
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Emitter± Base Voltage |
VEBO |
5.0 |
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Vdc |
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Collector Current Ð Continuous |
IC |
250 |
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mAdc |
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Total Device Dissipation @ TA = 25°C |
PD |
625 |
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mW |
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Derate above 25°C |
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5.0 |
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mW/°C |
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Total Device Dissipation @ TC = 25°C |
PD |
1.5 |
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Watts |
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Derate above 25°C |
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12 |
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mW/°C |
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Operating and Storage Junction |
TJ, Tstg |
± 55 to +150 |
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°C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
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Thermal Resistance, Junction to Ambient |
RqJA |
200 |
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°C/W |
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Thermal Resistance, Junction to Case |
RqJC |
83.3 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
2N4410
1
2 3
CASE 29±04, STYLE 1 TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage(1) |
V(BR)CEO |
80 |
Ð |
Vdc |
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(IC = 1.0 mAdc, IB = 0) |
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Collector± Emitter Breakdown Voltage |
V(BR)CEX |
120 |
Ð |
Vdc |
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(IC = 500 μAdc, VBE = 5.0 Vdc, RBE = 8.2 k ohms) |
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Collector± Base Breakdown Voltage |
V(BR)CBO |
120 |
Ð |
Vdc |
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(IC = 10 μAdc, IE = 0) |
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Emitter± Base Breakdown Voltage |
V(BR)EBO |
5.0 |
Ð |
Vdc |
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(IE = 10 μAdc, IC = 0) |
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Collector Cutoff Current |
ICBO |
Ð |
0.01 |
μAdc |
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(VCB = 100 Vdc, IE = 0) |
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(VCB = 100 Vdc, IE = 0, TA = 100°C) |
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Ð |
1.0 |
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Emitter Cutoff Current |
IEBO |
Ð |
0.1 |
μAdc |
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(VEB = 4.0 Vdc, IC = 0) |
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1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. |
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REV 1 |
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Motorola, Inc. 1996
2N4410
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic |
Symbol |
Min |
Max |
Unit |
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ON CHARACTERISTICS |
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DC Current Gain |
hFE |
60 |
Ð |
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(IC = 1.0 mAdc, VCE = 1.0 Vdc) |
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(IC = 10 mAdc, VCE = 1.0 Vdc) |
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60 |
400 |
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Collector± Emitter Saturation Voltage |
VCE(sat) |
Ð |
0.2 |
Vdc |
(IC = 1.0 mAdc, IB = 0.1 mAdc) |
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Base ± Emitter Saturation Voltage |
VBE(sat) |
Ð |
0.8 |
Vdc |
(IC = 1.0 mAdc, IB = 0.1 mAdc) |
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Base ± Emitter On Voltage |
VBE(on) |
Ð |
0.8 |
Vdc |
(IC = 1.0 mAdc, VCE = 5.0 Vdc) |
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SMALL± SIGNAL CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product (2) |
f |
60 |
300 |
MHz |
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) |
T |
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Collector±Base Capacitance |
Ccb |
Ð |
12 |
pF |
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz, emitter guarded) |
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Emitter±Base Capacitance |
Ceb |
Ð |
50 |
pF |
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz, collector guarded) |
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2. fT = |hfe| •ftest. |
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500 |
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300 |
TJ = 125°C |
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VCE = 1.0 V |
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200 |
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VCE = 5.0 V |
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GAIN |
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25°C |
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100 |
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CURRENT |
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± 55°C |
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50 |
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30 |
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, DC |
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20 |
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FE |
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h |
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10 |
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7.0 |
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5.0 |
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0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
(VOLTS) |
1.0 |
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0.9 |
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VOLTAGE |
0.8 |
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0.7 |
IC = 1.0 mA |
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10 mA |
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100 mA |
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0.6 |
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30 mA |
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,COLLECTOR±EMITTER |
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0.5 |
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0.4 |
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0.3 |
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0.2 |
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0.1 |
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CE |
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V |
0 |
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0.005 |
0.01 |
0.02 |
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
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IB, BASE CURRENT (mA) |
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Figure 2. Collector Saturation Region
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
2N4410
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101 |
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100 |
VCE = 30 V |
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μA) |
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CURRENT |
±1 |
TJ = 125°C |
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10 |
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IC = ICES |
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10±2 |
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,COLLECTOR |
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75°C |
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10±3 |
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REVERSE |
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FORWARD |
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25°C |
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C |
10±4 |
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I |
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10±5 |
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0.4 |
0.3 |
0.2 |
0.1 |
0 |
0.1 |
0.2 |
0.3 |
0.4 |
0.5 |
0.6 |
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VBE, BASE±EMITTER VOLTAGE (VOLTS) |
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Figure 3. Collector Cut±Off Region
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1.0 |
TJ = 25°C |
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°C) |
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0.8 |
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(mV/ |
VOLTAGEV, (VOLTS) |
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TEMPERATURE, COEFFICIENT |
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VCE(sat) @ IC/IB = 10 |
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VBE(sat) @ IC/IB = 10 |
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0.6 |
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0.4 |
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0.2 |
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V |
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θ |
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0 |
0.2 0.3 |
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1.0 |
2.0 3.0 |
5.0 |
10 |
20 |
30 |
50 |
100 |
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0.1 |
0.5 |
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IC, COLLECTOR CURRENT (mA) |
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2.5 |
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2.0 |
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TJ = ± 55°C to +135°C |
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1.5 |
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1.0 |
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0.5 |
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qVC for VCE(sat) |
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0 |
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± 0.5 |
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± 1.0 |
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qVB for VBE(sat) |
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± 1.5 |
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± 2.0 |
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± 2.5 |
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0.1 |
0.2 0.3 |
0.5 |
1.0 |
2.0 3.0 |
5.0 |
10 |
20 |
30 |
50 |
100 |
IC, COLLECTOR CURRENT (mA)
Figure 4. ªOnº Voltages |
Figure 5. Temperature Coefficients |
10.2 V |
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VBB |
VCC |
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± 8.8 V |
30 V |
Vin |
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100 |
3.0 k RC |
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μ |
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0.25 μF |
RB |
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10 s |
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Vout |
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INPUT PULSE |
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5.1 k |
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tr, tf ≤ 10 ns |
V |
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100 |
1N914 |
DUTY CYCLE = 1.0% |
in |
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Values Shown are for IC @ 10 mA |
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100 |
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70 |
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TJ = 25°C |
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50 |
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(pF) |
30 |
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20 |
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C, CAPACITANCE |
10 |
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7.0 |
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Cibo |
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5.0 |
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3.0 |
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Cobo |
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2.0 |
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1.0 |
0.3 |
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0.7 |
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3.0 |
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7.0 |
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0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
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VR, REVERSE VOLTAGE (VOLTS) |
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Figure 6. Switching Time Test Circuit |
Figure 7. Capacitances |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
3 |
2N4410 |
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1000 |
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IC/IB = 10 |
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500 |
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TJ = 25°C |
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300 |
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tr @ VCC = 120 V |
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200 |
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(ns) |
tr @ VCC = 30 V |
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t, TIME |
100 |
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td @ VEB(off) = 1.0 V |
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50 |
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30 |
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VCC = 120 V |
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20 |
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10 |
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20 |
30 |
50 |
100 |
200 |
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0.2 0.3 |
0.5 |
1.0 |
2.0 3.0 |
5.0 |
10 |
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IC, COLLECTOR CURRENT (mA)
Figure 8. Turn±On Time
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5000 |
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IC/IB = 10 |
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3000 |
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tf @ VCC = 120 V |
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TJ = 25°C |
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2000 |
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tf @ VCC = 30 V |
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(ns) |
1000 |
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500 |
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t, TIME |
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300 |
ts @ VCC = 120 V |
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200 |
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100 |
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|
|
|
|
|
|
|
50 |
|
|
|
|
|
|
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20 |
30 |
50 |
100 |
200 |
|
0.2 0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
||||||
|
|
|
|
IC, COLLECTOR CURRENT (mA) |
|
|
|
||||||
Figure 9. Turn±Off Time
4 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
2N4410
PACKAGE DIMENSIONS
A |
B |
|
|
||
R |
|
|
|
P |
|
|
L |
|
SEATING |
F |
|
PLANE |
K |
|
|
D |
|
X X |
J |
|
|
G |
|
H |
SECTION X±X |
|
V |
||
C |
||
1 |
N |
|
|
N |
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.175 |
0.205 |
4.45 |
5.20 |
B |
0.170 |
0.210 |
4.32 |
5.33 |
C |
0.125 |
0.165 |
3.18 |
4.19 |
D |
0.016 |
0.022 |
0.41 |
0.55 |
F |
0.016 |
0.019 |
0.41 |
0.48 |
G |
0.045 |
0.055 |
1.15 |
1.39 |
H |
0.095 |
0.105 |
2.42 |
2.66 |
J |
0.015 |
0.020 |
0.39 |
0.50 |
K |
0.500 |
±±± |
12.70 |
±±± |
L |
0.250 |
±±± |
6.35 |
±±± |
N |
0.080 |
0.105 |
2.04 |
2.66 |
P |
±±± |
0.100 |
±±± |
2.54 |
R |
0.115 |
±±± |
2.93 |
±±± |
V |
0.135 |
±±± |
3.43 |
±±± |
CASE 029±04 (TO±226AA)
ISSUE AD
STYLE 1:
PIN 1. EMITTER
2.BASE
3.COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
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Motorola Small±Signal Transistors, FETs and Diodes Device Data |
5 |
2N4410
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