MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6515/D
High Voltage Transistors
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COLLECTOR |
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COLLECTOR |
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3 |
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2 |
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2 |
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BASE |
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BASE |
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NPN |
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PNP |
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1 |
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1 |
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EMITTER |
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EMITTER |
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MAXIMUM RATINGS |
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2N6516 |
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2N6517 |
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Rating |
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Symbol |
2N6515 |
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2N6519 |
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2N6520 |
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Unit |
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Collector± Emitter Voltage |
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VCEO |
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250 |
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300 |
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350 |
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Vdc |
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Collector± Base Voltage |
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VCBO |
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250 |
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300 |
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350 |
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Vdc |
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Emitter± Base Voltage |
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VEBO |
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6.0 |
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Vdc |
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2N6515, 2N6516, 2N6517 |
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2N6519, 2N6520 |
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5.0 |
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Base Current |
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IB |
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250 |
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mAdc |
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Collector Current Ð Continuous |
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IC |
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500 |
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mAdc |
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Total Device Dissipation |
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PD |
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625 |
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mW |
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@ TA = 25°C |
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5.0 |
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mW/°C |
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Derate above 25°C |
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Total Device Dissipation |
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PD |
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1.5 |
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Watts |
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@ TC = 25°C |
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12 |
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mW/°C |
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Derate above 25°C |
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Operating and Storage Junction |
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TJ, Tstg |
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± 55 to +150 |
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°C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
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Symbol |
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Max |
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Unit |
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Thermal Resistance, Junction to Ambient |
RqJA |
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200 |
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°C/W |
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Thermal Resistance, Junction to Case |
RqJC |
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83.3 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
NPN 2N6515
thru 2N6517* PNP
2N6519
2N6520*
Voltage and current are negative for PNP transistors
*Motorola Preferred Device
1
2 3
CASE 29±04, STYLE 1
TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage(1) |
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V(BR)CEO |
250 |
Ð |
Vdc |
(IC = 1.0 mAdc, IB = 0) |
2N6515 |
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2N6516, 2N6519 |
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300 |
Ð |
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2N6517, 2N6520 |
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350 |
Ð |
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Collector± Base Breakdown Voltage |
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V(BR)CBO |
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Vdc |
(IC = 100 μAdc, IE = 0 ) |
2N6515 |
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250 |
Ð |
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2N6516, 2N6519 |
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300 |
Ð |
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2N6517, 2N6520 |
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350 |
Ð |
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Emitter± Base Breakdown Voltage |
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V(BR)EBO |
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Vdc |
(IE = 10 μAdc, IC = 0) |
2N6515, 2N6516, 2N6517 |
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6.0 |
Ð |
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2N6519, 2N6520 |
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5.0 |
Ð |
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1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
NPN 2N6515 thru 2N6517 PNP 2N6519 2N6520
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic |
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Min |
Max |
Unit |
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OFF CHARACTERISTICS (Continued) |
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Collector Cutoff Current |
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ICBO |
Ð |
50 |
nAdc |
(VCB = 150 Vdc, IE = 0) |
2N6515 |
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(VCB = 200 Vdc, IE = 0) |
2N6516, 2N6519 |
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Ð |
50 |
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(VCB = 250 Vdc, IE = 0) |
2N6517, 2N6520 |
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Ð |
50 |
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Emitter Cutoff Current |
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IEBO |
Ð |
50 |
nAdc |
(VEB = 5.0 Vdc, IC = 0) |
2N6515, 2N6516, 2N6517 |
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(VEB = 4.0 Vdc, IC = 0) |
2N6519, 2N6520 |
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Ð |
50 |
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ON CHARACTERISTICS(1) |
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DC Current Gain |
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hFE |
35 |
Ð |
Ð |
(IC = 1.0 mAdc, VCE = 10 Vdc) |
2N6515 |
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2N6516, 2N6519 |
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30 |
Ð |
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2N6517, 2N6520 |
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20 |
Ð |
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(IC = 10 mAdc, VCE = 10 Vdc) |
2N6515 |
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50 |
Ð |
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2N6516, 2N6519 |
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45 |
Ð |
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2N6517, 2N6520 |
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30 |
Ð |
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(IC = 30 mAdc, VCE = 10 Vdc) |
2N6515 |
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50 |
300 |
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2N6516, 2N6519 |
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45 |
270 |
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2N6517, 2N6520 |
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30 |
200 |
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(IC = 50 mAdc, VCE = 10 Vdc) |
2N6515 |
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45 |
220 |
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2N6516, 2N6519 |
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40 |
200 |
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2N6517, 2N6520 |
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20 |
200 |
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(IC = 100 mAdc, VCE = 10 Vdc) |
2N6515 |
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25 |
Ð |
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2N6516, 2N6519 |
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20 |
Ð |
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2N6517, 2N6520 |
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15 |
Ð |
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Collector± Emitter Saturation Voltage |
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VCE(sat) |
Ð |
0.30 |
Vdc |
(IC = 10 mAdc, IB = 1.0 mAdc) |
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(IC = 20 mAdc, IB = 2.0 mAdc) |
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Ð |
0.35 |
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(IC = 30 mAdc, IB = 3.0 mAdc) |
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Ð |
0.50 |
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(IC = 50 mAdc, IB = 5.0 mAdc) |
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Ð |
1.0 |
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Base ± Emitter Saturation Voltage |
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VBE(sat) |
Ð |
0.75 |
Vdc |
(IC = 10 mAdc, IB = 1.0 mAdc) |
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(IC = 20 mAdc, IB = 2.0 mAdc) |
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Ð |
0.85 |
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(IC = 30 mAdc, IB = 3.0 mAdc) |
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Ð |
0.90 |
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Base±Emitter On Voltage |
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VBE(on) |
Ð |
2.0 |
Vdc |
(IC = 100 mAdc, VCE = 10 Vdc) |
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SMALL± SIGNAL CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product (1) |
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f |
40 |
200 |
MHz |
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz) |
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T |
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Collector±Base Capacitance |
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Ccb |
Ð |
6.0 |
pF |
(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) |
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Emitter±Base Capacitance |
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Ceb |
Ð |
80 |
pF |
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) |
2N6515 thru 2N6517 |
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2N6519, 2N6520 |
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Ð |
100 |
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SWITCHING CHARACTERISTICS |
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Turn±On Time |
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ton |
Ð |
200 |
μs |
(VCC = 100 Vdc, VBE(off) = 2.0 Vdc, IC = 50 mAdc, IB1 = 10 mAdc) |
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Turn±Off Time |
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toff |
Ð |
3.5 |
μs |
(VCC = 100 Vdc, IC = 50 mAdc, IB1 = IB2 = 10 mAdc) |
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1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. |
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2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
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NPN |
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2N6515, 2N6516 |
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200 |
VCE = 10 V |
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TJ = 125°C |
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GAIN |
100 |
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25°C |
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CURRENT |
70 |
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± 55°C |
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50 |
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, DC |
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FE |
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h |
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30 |
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20 |
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1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
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IC, COLLECTOR CURRENT (mA) |
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NPN |
2N6515 |
thru |
2N6517 |
PNP |
2N6519 |
2N6520 |
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PNP |
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2N6519 |
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200 |
VCE = ±10 V |
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TJ = 125°C |
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GAIN |
100 |
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25°C |
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CURRENT |
70 |
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± 55°C |
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50 |
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, DC |
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FE |
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h |
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30 |
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20 |
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±1.0 |
± 2.0 |
± 3.0 |
± 5.0 ± 7.0 ±10 |
± 20 |
± 30 |
± 50 ± 70 ±100 |
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IC, COLLECTOR CURRENT (mA) |
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Figure 1. DC Current Gain
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2N6517 |
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200 |
VCE = 10 V |
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TJ = 125°C |
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GAIN |
100 |
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25°C |
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70 |
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CURRENT |
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50 |
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± 55°C |
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DC |
30 |
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FE |
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h |
20 |
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10 |
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1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
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IC, COLLECTOR CURRENT (mA) |
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2N6520 |
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200 |
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VCE = ±10 V |
TJ = 125°C |
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GAIN |
100 |
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25°C |
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70 |
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DC CURRENT |
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± 55°C |
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50 |
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30 |
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, |
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FE |
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h |
20 |
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10 |
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±1.0 |
± 2.0 |
± 3.0 |
± 5.0 ± 7.0 ±10 |
± 20 |
± 30 |
± 50 ± 70±100 |
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IC, COLLECTOR CURRENT (mA) |
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Figure 2. DC Current Gain
(MHz) |
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2N6515, 2N6516, 2N6517 |
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100 |
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PRODUCT |
70 |
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50 |
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Ð BANDWIDTH |
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30 |
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TJ = 25°C |
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VCE = 20 V |
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f = 20 MHz |
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,CURRENT±GAIN |
20 |
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10 |
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T |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
f |
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IC, COLLECTOR CURRENT (mA) |
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(MHz) |
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2N6519, 2N6520 |
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100 |
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PRODUCT |
70 |
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50 |
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Ð BANDWIDTH |
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30 |
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TJ = 25°C |
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VCE = ± 20 V |
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f = 20 MHz |
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,CURRENT±GAIN |
20 |
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10 |
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T |
±1.0 |
± 2.0 |
± 3.0 |
± 5.0 ± 7.0 ±10 |
± 20 |
± 30 |
± 50 ± 70±100 |
f |
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IC, COLLECTOR CURRENT (mA) |
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|||
Figure 3. Current±Gain Ð Bandwidth Product
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
3 |
NPN 2N6515 thru 2N6517 PNP 2N6519 2N6520
V, VOLTAGE (VOLTS)
NPN
2N6515, 2N6516, 2N6517
1.4
TJ = 25°C
1.2
1.0
0.8VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 10 V
0.4
0.2VCE(sat) @ IC/IB = 10
0 |
VCE(sat) @ IC/IB = 5.0 |
|
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
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IC, COLLECTOR CURRENT (mA) |
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PNP |
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2N6519, 2N6520 |
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±1.4 |
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±1.2 |
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TJ = 25°C |
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(VOLTS) |
±1.0 |
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±0.8 |
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VBE(sat) @ IC/IB = 10 |
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V, VOLTAGE |
±0.6 |
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VBE(on) @ VCE = ±10 V |
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±0.4 |
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±0.2 |
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VCE(sat) @ IC/IB = 10 |
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0 |
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VCE(sat) @ IC/IB = 5.0 |
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±1.0 |
± 2.0 |
± 3.0 |
± 5.0 ± 7.0 ±10 |
± 20 ± 30 |
± 50 ± 70±100 |
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IC, COLLECTOR CURRENT (mA) |
|
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Figure 4. ªOnº Voltages
RθV, TEMPERATURE COEFFICIENTS (mV/°C)
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2N6515, 2N6516, 2N6517 |
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2N6519, 2N6520 |
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2.5 |
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IB |
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C)(mV/° |
2.5 |
IB |
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2.0 |
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IC |
+ 10 |
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2.0 |
IC |
+ 10 |
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1.5 |
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COEFFICIENTS |
1.5 |
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0 |
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25°C to 125°C |
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0 |
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± 55°C to 25°C |
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1.0 |
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1.0 |
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25°C to 125°C |
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0.5 |
RθVC for VCE(sat) |
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0.5 |
RθVB for VBE |
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TEMPERATURE |
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± 0.5 |
RθVB for VBE |
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± 55°C to 25°C |
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± 0.5 |
RθVC for VCE(sat) |
|
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± 55°C to 125°C |
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± 1.0 |
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± 55°C to 125°C |
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± 1.0 |
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± 1.5 |
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± 1.5 |
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± 2.0 |
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, |
± 2.0 |
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θV |
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± 2.5 |
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R |
± 2.5 |
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1.0 |
2.0 |
3.0 |
5.0 7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
|
±1.0 |
± 2.0 ± 3.0 |
± 5.0 ± 7.0 |
±10 |
± 20 |
± 30 |
± 50 ± 70 ±100 |
|
|
IC, COLLECTOR CURRENT (mA) |
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IC, COLLECTOR CURRENT (mA) |
|
||||||||
Figure 5. Temperature Coefficients
|
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2N6515, 2N6516, 2N6517 |
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|
100 |
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70 |
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TJ = 25°C |
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50 |
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Ceb |
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(pF) |
30 |
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20 |
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CAPACITANCE |
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10 |
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7.0 |
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5.0 |
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Ccb |
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C, |
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3.0 |
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2.0 |
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1.0 |
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0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 100 |
200 |
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VR, REVERSE VOLTAGE (VOLTS) |
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2N6519, 2N6520 |
|
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100 |
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70 |
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Ceb |
|
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TJ = 25°C |
|
50 |
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(pF) |
30 |
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20 |
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CAPACITANCE |
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10 |
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Ccb |
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7.0 |
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5.0 |
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C, |
3.0 |
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2.0 |
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1.0 |
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± 0.2 |
± 0.5 |
± 1.0 |
± 2.0 |
± 5.0 |
± 10 |
± 20 |
± 50 ± 100 ± 200 |
|
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VR, REVERSE VOLTAGE (VOLTS) |
|
||||
Figure 6. Capacitance
4 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
|
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|
NPN |
|
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2N6515, 2N6516, 2N6517 |
|
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|||||||
|
1.0 k |
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700 |
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VCE(off) = 100 V |
|
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|
500 |
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t |
d |
@ V |
BE(off) |
= 2.0 V |
|
IC/IB = 5.0 |
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|
300 |
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TJ = 25°C |
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(ns) |
200 |
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tr |
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t, TIME |
100 |
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70 |
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50 |
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30 |
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20 |
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10 |
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1.0 |
2.0 |
3.0 |
|
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
||
NPN |
2N6515 |
thru 2N6517 |
PNP 2N6519 |
2N6520 |
||||
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PNP |
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2N6519, 2N6520 |
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1.0 k |
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700 |
|
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td @ VBE(off) = 2.0 V |
|
VCE(off) = ±100 V |
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500 |
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|||
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IC/IB = 5.0 |
|
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300 |
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TJ = 25°C |
|
(ns) |
200 |
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tr |
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t, TIME |
100 |
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70 |
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50 |
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30 |
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20 |
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10 |
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±1.0 |
± 2.0 ± 3.0 |
± 5.0 ± 7.0 ±10 |
± 20 |
± 30 ± 50 ± 70 ±100 |
|
||
IC, COLLECTOR CURRENT (mA) |
IC, COLLECTOR CURRENT (mA) |
Figure 7. Turn±On Time
|
|
|
2N6515, 2N6516, 2N6517 |
|
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|||||
|
10 k |
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7.0 k |
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5.0 k |
|
ts |
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3.0 k |
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(ns) |
2.0 k |
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tf |
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VCE(off) = 100 V |
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||
t,TIME |
1.0 k |
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IC/IB = 5.0 |
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||
700 |
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IB1 = IB2 |
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500 |
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TJ = 25°C |
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300 |
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200 |
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100 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
70 |
100 |
|
1.0 |
||||||||||
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2N6519, 2N6520 |
|
||
2.0 k |
|
ts |
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1.0 k |
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700 |
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500 |
|
tf |
|
VCE(off) = ±100 V |
|
300 |
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|||
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IC/IB = 5.0 |
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200 |
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IB1 = IB2 |
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TJ = 25°C |
|
100 |
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70 |
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50 |
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30 |
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20 |
± 2.0 ± 3.0 |
± 5.0 ± 7.0 |
±10 |
± 20 ± 30 |
± 50 ± 70 ±100 |
±1.0 |
|||||
IC, COLLECTOR CURRENT (mA) |
IC, COLLECTOR CURRENT (mA) |
Figure 8. Turn±Off Time
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
5 |
NPN 2N6515 thru 2N6517 PNP 2N6519 2N6520
+VCC
+10.8 V
±9.2 V 
PULSE WIDTH ≈ 100 μs tr, tf ≤ 5.0 ns
DUTY CYCLE ≤ 1.0% FOR PNP TEST CIRCUIT,
REVERSE ALL VOLTAGE POLARITIES
VCC ADJUSTED |
2.2 k |
|
FOR VCE(off) = 100 V |
20 k |
|
50 Ω SAMPLING SCOPE |
||
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||
1.0 k |
|
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50 |
|
1/2MSD7000 |
|
|
APPROXIMATELY |
(ADJUST FOR V(BE)off = 2.0 V) |
|
±1.35 V |
Figure 9. Switching Time Test Circuit
|
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1.0 |
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0.7 |
D = 0.5 |
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RESISTANCE (NORMALIZED) |
0.5 |
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0.2 |
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r(t), TRANSIENT THERMAL |
0.3 |
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0.2 |
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SINGLE PULSE |
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0.1 |
0.05 |
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0.1 |
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0.07 |
|
SINGLE PULSE |
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||||
0.05 |
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ZθJC(t) = r(t) •RθJC |
|
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|
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0.03 |
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TJ(pk) ± TC = P(pk) ZθJC(t) |
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|
ZθJA(t) = r(t) •RθJA |
TJ(pk) ± TA = P(pk) ZθJA(t) |
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0.02 |
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0.01 |
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0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
1.0 k |
2.0 k |
5.0 k |
10 k |
t, TIME (ms)
Figure 10. Thermal Response
IC, COLLECTOR CURRENT (mA)
500 |
|
|
|
200 |
TA = 25°C |
100 μs |
10 μs |
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||
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100 |
° |
|
1.0 ms |
|
TC = 25 C |
|
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50 |
|
100 ms |
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|
20
10
CURRENT LIMIT
THERMAL LIMIT
5.0(PULSE CURVES @ TC = 25°C)
SECOND BREAKDOWN LIMIT
2.0
1.0 |
|
CURVES APPLY |
|
|
2N6515 |
|
|
||
|
BELOW RATED VCEO |
|
2N6516, 2N6519 |
|
|
||||
0.5 |
|
|
2N6517, 2N6520 |
|
|
||||
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
Figure 11. Active Region Safe Operating Area
FIGURE A
tP
|
|
PP |
|
PP |
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|
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|
|
t1
1/f
DUTY CYCLE + t1 f + t1 tP
PEAK PULSE POWER = PP
Design Note: Use of Transient Thermal Resistance Data
6 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
NPN 2N6515 thru 2N6517 PNP 2N6519 2N6520
PACKAGE DIMENSIONS
A |
B |
|
|
||
R |
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|
P |
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|
L |
|
SEATING |
F |
|
PLANE |
K |
|
|
D |
|
X X |
J |
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|
G |
|
H |
SECTION X±X |
|
V |
||
C |
||
1 |
N |
|
|
N |
CASE 029±04 (TO±226AA)
ISSUE AD
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.175 |
0.205 |
4.45 |
5.20 |
B |
0.170 |
0.210 |
4.32 |
5.33 |
C |
0.125 |
0.165 |
3.18 |
4.19 |
D |
0.016 |
0.022 |
0.41 |
0.55 |
F |
0.016 |
0.019 |
0.41 |
0.48 |
G |
0.045 |
0.055 |
1.15 |
1.39 |
H |
0.095 |
0.105 |
2.42 |
2.66 |
J |
0.015 |
0.020 |
0.39 |
0.50 |
K |
0.500 |
±±± |
12.70 |
±±± |
L |
0.250 |
±±± |
6.35 |
±±± |
N |
0.080 |
0.105 |
2.04 |
2.66 |
P |
±±± |
0.100 |
±±± |
2.54 |
R |
0.115 |
±±± |
2.93 |
±±± |
V |
0.135 |
±±± |
3.43 |
±±± |
STYLE 1:
PIN 1. EMITTER
2.BASE
3.COLLECTOR
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
7 |
NPN 2N6515 thru 2N6517 PNP 2N6519 2N6520
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◊ |
2N6515/D |
*2N6515/D*