MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5400/D
Amplifier Transistors
PNP Silicon
|
|
|
|
COLLECTOR |
||||
|
|
|
|
|
3 |
|
||
|
|
|
2 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
BASE |
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
1 |
|||
|
|
|
|
|
|
EMITTER |
||
MAXIMUM RATINGS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Rating |
Symbol |
2N5400 |
2N5401 |
|
Unit |
|||
|
|
|
|
|
|
|
|
|
Collector± Emitter Voltage |
VCEO |
120 |
150 |
|
Vdc |
|||
Collector± Base Voltage |
VCBO |
130 |
160 |
|
Vdc |
|||
Emitter± Base Voltage |
VEBO |
5.0 |
|
|
Vdc |
|||
Collector Current Ð Continuous |
IC |
600 |
|
|
mAdc |
|||
Total Device Dissipation @ TA = 25°C |
PD |
625 |
|
|
mW |
|||
Derate above 25°C |
|
5.0 |
|
|
mW/°C |
|||
|
|
|
|
|
|
|
|
|
Total Device Dissipation @ TC = 25°C |
PD |
1.5 |
|
|
Watts |
|||
Derate above 25°C |
|
12 |
|
|
mW/°C |
|||
|
|
|
|
|
|
|
|
|
Operating and Storage Junction |
TJ, Tstg |
± 55 to +150 |
|
°C |
||||
Temperature Range |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
THERMAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Characteristic |
Symbol |
Max |
|
Unit |
||||
|
|
|
|
|
|
|
|
|
Thermal Resistance, Junction to Ambient |
RqJA |
200 |
|
|
°C/W |
|||
Thermal Resistance, Junction to Case |
RqJC |
83.3 |
|
|
°C/W |
|||
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
2N5400
2N5401*
*Motorola Preferred Device
1
2 3
CASE 29±04, STYLE 1 TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Max |
Unit |
|
|
|
|
|
OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage(1) |
|
V(BR)CEO |
120 |
Ð |
Vdc |
(IC = 1.0 mAdc, IB = 0) |
2N5400 |
|
|
||
|
2N5401 |
|
150 |
Ð |
|
|
|
|
|
|
|
Collector± Base Breakdown Voltage |
|
V(BR)CBO |
130 |
Ð |
Vdc |
(IC = 100 mAdc, IE = 0) |
2N5400 |
|
|
||
|
2N5401 |
|
160 |
Ð |
|
|
|
|
|
|
|
Emitter± Base Breakdown Voltage |
|
V(BR)EBO |
5.0 |
Ð |
Vdc |
(IE = 10 mAdc, IC = 0) |
|
|
|
|
|
Collector Cutoff Current |
|
ICBO |
Ð |
100 |
nAdc |
(VCB = 100 Vdc, IE = 0) |
2N5400 |
|
|||
(VCB = 120 Vdc, IE = 0) |
2N5401 |
|
Ð |
50 |
|
(VCB = 100 Vdc, IE = 0, TA = 100°C) |
2N5400 |
|
Ð |
100 |
μAdc |
(VCB = 120 Vdc, IE = 0, TA = 100°C) |
2N5401 |
|
Ð |
50 |
|
Emitter Cutoff Current |
|
IEBO |
Ð |
50 |
nAdc |
(VEB = 3.0 Vdc, IC = 0) |
|
|
|
|
|
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. |
|
|
|
|
|
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola, Inc. 1996
2N5400 |
2N5401 |
|
|
|
|
|
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) |
|
|
|
|
||
|
Characteristic |
|
Symbol |
Min |
Max |
Unit |
|
|
|
|
|
|
|
ON CHARACTERISTICS(1) |
|
|
|
|
|
|
DC Current Gain |
|
hFE |
30 |
Ð |
Ð |
|
(IC = 1.0 mAdc, VCE = 5.0 Vdc) |
2N5400 |
|
|
|||
|
|
2N5401 |
|
50 |
Ð |
|
(IC = 10 mAdc, VCE = 5.0 Vdc) |
2N5400 |
|
40 |
180 |
|
|
|
|
2N5401 |
|
60 |
240 |
|
(IC = 50 mAdc, VCE = 5.0 Vdc) |
2N5400 |
|
40 |
Ð |
|
|
|
|
2N5401 |
|
50 |
Ð |
|
|
|
|
|
|
|
|
Collector± Emitter Saturation Voltage |
|
VCE(sat) |
Ð |
0.2 |
Vdc |
|
(IC = 10 mAdc, IB = 1.0 mAdc) |
|
|
|
|||
(IC = 50 mAdc, IB = 5.0 mAdc) |
|
|
Ð |
0.5 |
|
|
Base ± Emitter Saturation Voltage |
|
VBE(sat) |
Ð |
1.0 |
Vdc |
|
(IC = 10 mAdc, IB = 1.0 mAdc) |
|
|
|
|||
(IC = 50 mAdc, IB = 5.0 mAdc) |
|
|
Ð |
1.0 |
|
|
SMALL± SIGNAL CHARACTERISTICS |
|
|
|
|
|
|
|
|
|
|
|
|
|
Current± Gain Ð Bandwidth Product |
|
fT |
100 |
400 |
MHz |
|
(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) |
2N5400 |
|
|
|||
|
|
2N5401 |
|
100 |
300 |
|
|
|
|
|
|
|
|
Output Capacitance |
|
Cobo |
Ð |
6.0 |
pF |
|
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) |
|
|
|
|
|
|
Small±Signal Current Gain |
|
hfe |
30 |
200 |
Ð |
|
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
2N5400 |
|
|
|||
|
|
2N5401 |
|
40 |
200 |
|
|
|
|
|
|
|
|
Noise Figure |
|
NF |
Ð |
8.0 |
dB |
|
(IC = 250 μAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) |
|
|
|
|
|
|
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. |
|
|
|
|
|
|
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
|
|
|
|
|
|
|
|
|
|
|
|
2N5400 |
2N5401 |
|
200 |
|
|
|
|
|
|
|
|
|
|
|
|
|
150 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
TJ = 125°C |
|
|
|
|
|
|
|
|
|
|
GAIN |
100 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
25°C |
|
|
|
|
|
|
|
|
|
|
|
CURRENT |
70 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
50 |
|
|
|
|
|
|
|
|
|
|
|
|
|
, |
|
|
|
|
|
|
|
|
|
|
|
|
|
FE |
|
|
± 55°C |
|
|
|
|
|
|
|
|
|
|
h |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
30 |
|
|
|
|
|
|
|
|
VCE = ± 1.0 V |
|
|
|
|
|
|
|
|
|
|
|
|
|
VCE = ± 5.0 V |
|
|
|
|
20 |
0.2 |
0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
20 |
30 |
50 |
100 |
|
0.1 |
||||||||||||
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
1.0 |
|
|
|
|
|
|
|
|
|
|
|
|
0.9 |
|
|
|
|
|
|
|
|
|
|
|
|
0.8 |
|
|
|
|
|
|
|
|
|
|
|
|
0.7 |
|
|
|
|
|
|
|
|
|
|
|
|
0.6 |
|
IC = 1.0 mA |
|
|
10 mA |
30 mA |
|
|
100 mA |
|
|
|
0.5 |
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
0.4 |
|
|
|
|
|
|
|
|
|
|
|
|
0.3 |
|
|
|
|
|
|
|
|
|
|
|
|
0.2 |
|
|
|
|
|
|
|
|
|
|
|
|
0.1 |
|
|
|
|
|
|
|
|
|
|
|
|
0 |
|
|
|
|
|
|
|
|
|
|
|
|
0.005 |
0.01 |
0.02 |
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
IB, BASE CURRENT (mA)
Figure 2. Collector Saturation Region
|
103 |
|
|
|
|
|
|
|
|
|
|
μA) |
102 |
VCE = 30 V |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
( |
|
|
|
|
IC = ICES |
|
|
|
|
|
|
CURRENT |
101 |
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
||
100 |
TJ = 125°C |
|
|
|
|
|
|
|
|
||
, COLLECTOR |
|
|
|
|
|
|
|
|
|
|
|
10±1 |
|
75°C |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
±2 |
REVERSE |
|
|
FORWARD |
|
|
|
|
|||
C |
|
25°C |
|
|
|
|
|
|
|
|
|
I |
10 |
|
|
|
|
|
|
|
|
|
|
|
10±3 |
|
|
|
|
|
|
|
|
|
|
|
0.3 |
0.2 |
0.1 |
0 |
0.1 |
0.2 |
0.3 |
0.4 |
0.5 |
0.6 |
0.7 |
|
|
|
VBE, BASE±EMITTER VOLTAGE (VOLTS) |
|
|
||||||
Figure 3. Collector Cut±Off Region
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
3 |
2N5400 |
2N5401 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|||
|
1.0 |
|
|
|
|
|
|
|
|
|
|
|
2.5 |
TJ = ± 55°C to 135°C |
|
|
|
|
|
|
|||
|
TJ = 25°C |
|
|
|
|
|
|
|
|
|
°C) |
2.0 |
|
|
|
|
|
|
|||||
|
0.9 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
(mV/ |
|
|
|
|
|
|
|
|
|
|
||
(VOLTS)VOLTAGEV, |
0.8 |
|
|
|
|
|
|
|
|
|
|
1.5 |
θVB for VBE(sat) |
|
|
|
|
|
|
|
|||
0.7 |
|
|
|
|
|
|
|
|
|
|
COEFFICIENTTEMPERATURE |
1.0 |
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
VBE(sat) @ IC/IB = 10 |
|
|
|
|
|
|
|
|
0.5 |
|
|
|
|
|
|
|
|
|
|
|||
|
0.6 |
|
|
|
|
|
|
|
|
|
|
|
θVC for VCE(sat) |
|
|
|
|
|
|
|
|||
|
0.5 |
|
|
|
|
|
|
|
|
|
|
|
0 |
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
0.4 |
|
|
|
|
|
|
|
|
|
|
|
±0.5 |
|
|
|
|
|
|
|
|
|
|
|
0.3 |
|
|
|
|
|
|
|
|
|
|
|
±1.0 |
|
|
|
|
|
|
|
|
|
|
|
0.2 |
VCE(sat) @ IC/IB = 10 |
|
|
|
|
|
|
|
±1.5 |
|
|
|
|
|
|
|
|
|
|
|||
|
0.1 |
|
|
|
|
|
|
|
±2.0 |
|
|
|
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
|
|
|
|
V |
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
, |
|
|
|
|
|
|
|
|
|
|
|
|
0 |
|
|
|
|
|
|
|
|
|
|
θ |
±2.5 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
|
0.1 |
0.2 0.3 |
0.5 |
1.0 |
2.0 3.0 |
5.0 |
10 |
20 |
30 |
50 |
100 |
|
0.1 |
0.2 0.3 |
0.5 |
1.0 |
2.0 3.0 |
5.0 |
10 |
20 |
30 |
50 |
100 |
|
|
|
|
IC, COLLECTOR CURRENT (mA) |
|
|
|
|
|
|
|
IC, COLLECTOR CURRENT (mA) |
|
|
|
|
|||||||
Figure 4. ªOnº Voltages |
Figure 5. Temperature Coefficients |
10.2 V
Vin
10 μs 
INPUT PULSE
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
VBB |
VCC |
+ 8.8 V |
±30 V |
100 |
3.0 k RC |
0.25 μF |
RB |
Vout |
|
||
|
|
|
|
5.1 k |
|
Vin |
100 |
1N914 |
Values Shown are for IC @ 10 mA
|
100 |
|
|
|
|
|
|
|
|
TJ = 25°C |
|
|
70 |
|
|
|
|
|
|
|
|
|
|
|
50 |
|
|
|
|
|
|
|
|
|
|
(pF) |
30 |
|
|
|
|
|
|
|
|
|
|
20 |
|
|
|
|
|
|
Cibo |
|
|
|
|
CAPACITANCE |
|
|
|
|
|
|
|
|
|
||
10 |
|
|
|
|
|
|
|
|
|
|
|
7.0 |
|
|
|
|
|
|
|
|
Cobo |
|
|
5.0 |
|
|
|
|
|
|
|
|
|
||
C, |
3.0 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2.0 |
|
|
|
|
|
|
|
|
|
|
|
1.0 |
|
|
|
|
|
|
|
|
|
|
|
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
|
|
|
|
VR, REVERSE VOLTAGE (VOLTS) |
|
|
|
||||
Figure 6. Switching Time Test Circuit |
Figure 7. Capacitances |
t, TIME (ns)
1000 |
|
|
|
|
|
|
|
|
|
|
|
700 |
IC/IB = 10 |
|
|
|
|
tr @ VCC = 120 V |
|
||||
500 |
TJ = 25°C |
|
|
|
|
|
|||||
300 |
|
|
|
|
|
|
|
tr @ VCC = 30 V |
|
||
200 |
|
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|
|
|
100 |
|
|
|
|
|
|
|
|
|
|
|
70 |
|
|
|
|
|
|
|
|
|
|
|
50 |
|
|
|
|
|
|
|
|
|
|
|
30 |
|
|
|
|
|
|
|
|
|
|
|
20 |
|
|
|
|
|
td @ VBE(off) = 1.0 V |
|
|
|||
|
|
|
|
|
|
VCC = 120 V |
|
|
|
|
|
10 |
|
|
|
|
|
|
|
|
|
|
|
0.2 0.3 |
0.5 |
1.0 |
2.0 3.0 |
5.0 |
10 |
20 |
30 |
50 |
100 |
200 |
|
IC, COLLECTOR CURRENT (mA)
|
2000 |
|
|
|
|
|
|
|
|
|
|
|
|
|
1000 |
IC/IB = 10 |
|
|
|
|
|
tf @ VCC = 120 V |
|
|
|||
|
700 |
|
|
|
|
|
|
|
|||||
|
TJ = 25°C |
|
|
|
|
|
|
|
|
|
|
||
|
500 |
|
|
|
|
|
|
|
|
|
|
|
|
(ns) |
300 |
|
tf @ VCC = 30 V |
|
|
|
|
|
|
|
|
||
TIME |
200 |
|
ts @ VCC = 120 V |
|
|
|
|
|
|
|
|||
|
|
|
|
|
|
|
|
|
|||||
t, |
100 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
70 |
|
|
|
|
|
|
|
|
|
|
|
|
|
50 |
|
|
|
|
|
|
|
|
|
|
|
|
|
30 |
|
|
|
|
|
|
|
|
|
|
|
|
|
20 |
|
|
|
|
|
|
|
|
|
|
|
|
|
0.2 0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
20 |
30 |
50 |
100 |
200 |
|
|
|
|
|
IC, COLLECTOR CURRENT (mA) |
|
|
|
||||||
Figure 8. Turn±On Time |
Figure 9. Turn±Off Time |
4 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
2N5400 2N5401
PACKAGE DIMENSIONS
A |
B |
|
|
||
R |
|
|
|
P |
|
|
L |
|
SEATING |
F |
|
PLANE |
K |
|
|
D |
|
X X |
J |
|
|
G |
|
H |
SECTION X±X |
|
V |
||
C |
||
1 |
N |
|
|
N |
CASE 029±04 (TO±226AA)
ISSUE AD
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.175 |
0.205 |
4.45 |
5.20 |
B |
0.170 |
0.210 |
4.32 |
5.33 |
C |
0.125 |
0.165 |
3.18 |
4.19 |
D |
0.016 |
0.022 |
0.41 |
0.55 |
F |
0.016 |
0.019 |
0.41 |
0.48 |
G |
0.045 |
0.055 |
1.15 |
1.39 |
H |
0.095 |
0.105 |
2.42 |
2.66 |
J |
0.015 |
0.020 |
0.39 |
0.50 |
K |
0.500 |
±±± |
12.70 |
±±± |
L |
0.250 |
±±± |
6.35 |
±±± |
N |
0.080 |
0.105 |
2.04 |
2.66 |
P |
±±± |
0.100 |
±±± |
2.54 |
R |
0.115 |
±±± |
2.93 |
±±± |
V |
0.135 |
±±± |
3.43 |
±±± |
STYLE 1:
PIN 1. EMITTER
2.BASE
3.COLLECTOR
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
5 |
2N5400 2N5401
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: |
|
USA/EUROPE: Motorola Literature Distribution; |
JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki, |
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447 |
6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315 |
MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, |
|
INTERNET: http://Design±NET.com |
51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298 |
◊ |
2N5400/D |
*2N5400/D*
