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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N5400/D

Amplifier Transistors

PNP Silicon

 

 

 

 

COLLECTOR

 

 

 

 

 

3

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BASE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

EMITTER

MAXIMUM RATINGS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rating

Symbol

2N5400

2N5401

 

Unit

 

 

 

 

 

 

 

 

 

Collector± Emitter Voltage

VCEO

120

150

 

Vdc

Collector± Base Voltage

VCBO

130

160

 

Vdc

Emitter± Base Voltage

VEBO

5.0

 

 

Vdc

Collector Current Ð Continuous

IC

600

 

 

mAdc

Total Device Dissipation @ TA = 25°C

PD

625

 

 

mW

Derate above 25°C

 

5.0

 

 

mW/°C

 

 

 

 

 

 

 

 

Total Device Dissipation @ TC = 25°C

PD

1.5

 

 

Watts

Derate above 25°C

 

12

 

 

mW/°C

 

 

 

 

 

 

 

 

Operating and Storage Junction

TJ, Tstg

± 55 to +150

 

°C

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

Max

 

Unit

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to Ambient

RqJA

200

 

 

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

 

 

°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

2N5400

2N5401*

*Motorola Preferred Device

1

2 3

CASE 29±04, STYLE 1 TO±92 (TO±226AA)

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage(1)

 

V(BR)CEO

120

Ð

Vdc

(IC = 1.0 mAdc, IB = 0)

2N5400

 

 

 

2N5401

 

150

Ð

 

 

 

 

 

 

 

Collector± Base Breakdown Voltage

 

V(BR)CBO

130

Ð

Vdc

(IC = 100 mAdc, IE = 0)

2N5400

 

 

 

2N5401

 

160

Ð

 

 

 

 

 

 

 

Emitter± Base Breakdown Voltage

 

V(BR)EBO

5.0

Ð

Vdc

(IE = 10 mAdc, IC = 0)

 

 

 

 

 

Collector Cutoff Current

 

ICBO

Ð

100

nAdc

(VCB = 100 Vdc, IE = 0)

2N5400

 

(VCB = 120 Vdc, IE = 0)

2N5401

 

Ð

50

 

(VCB = 100 Vdc, IE = 0, TA = 100°C)

2N5400

 

Ð

100

μAdc

(VCB = 120 Vdc, IE = 0, TA = 100°C)

2N5401

 

Ð

50

 

Emitter Cutoff Current

 

IEBO

Ð

50

nAdc

(VEB = 3.0 Vdc, IC = 0)

 

 

 

 

 

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

 

 

 

 

 

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1996

2N5400

2N5401

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

 

 

 

 

 

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

ON CHARACTERISTICS(1)

 

 

 

 

 

DC Current Gain

 

hFE

30

Ð

Ð

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

2N5400

 

 

 

 

2N5401

 

50

Ð

 

(IC = 10 mAdc, VCE = 5.0 Vdc)

2N5400

 

40

180

 

 

 

2N5401

 

60

240

 

(IC = 50 mAdc, VCE = 5.0 Vdc)

2N5400

 

40

Ð

 

 

 

2N5401

 

50

Ð

 

 

 

 

 

 

 

Collector± Emitter Saturation Voltage

 

VCE(sat)

Ð

0.2

Vdc

(IC = 10 mAdc, IB = 1.0 mAdc)

 

 

 

(IC = 50 mAdc, IB = 5.0 mAdc)

 

 

Ð

0.5

 

Base ± Emitter Saturation Voltage

 

VBE(sat)

Ð

1.0

Vdc

(IC = 10 mAdc, IB = 1.0 mAdc)

 

 

 

(IC = 50 mAdc, IB = 5.0 mAdc)

 

 

Ð

1.0

 

SMALL± SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Current± Gain Ð Bandwidth Product

 

fT

100

400

MHz

(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)

2N5400

 

 

 

 

2N5401

 

100

300

 

 

 

 

 

 

 

Output Capacitance

 

Cobo

Ð

6.0

pF

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

 

 

 

 

 

Small±Signal Current Gain

 

hfe

30

200

Ð

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

2N5400

 

 

 

 

2N5401

 

40

200

 

 

 

 

 

 

 

Noise Figure

 

NF

Ð

8.0

dB

(IC = 250 μAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)

 

 

 

 

 

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

 

 

 

 

 

2

Motorola Small±Signal Transistors, FETs and Diodes Device Data

 

 

 

 

 

 

 

 

 

 

 

 

2N5400

2N5401

 

200

 

 

 

 

 

 

 

 

 

 

 

 

 

150

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 125°C

 

 

 

 

 

 

 

 

 

 

GAIN

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

25°C

 

 

 

 

 

 

 

 

 

 

CURRENT

70

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

 

 

 

 

FE

 

 

± 55°C

 

 

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

VCE = ± 1.0 V

 

 

 

 

 

 

 

 

 

 

 

 

VCE = ± 5.0 V

 

 

 

20

0.2

0.3

0.5

1.0

2.0

3.0

5.0

10

20

30

50

100

 

0.1

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

1.0

 

 

 

 

 

 

 

 

 

 

 

 

0.9

 

 

 

 

 

 

 

 

 

 

 

 

0.8

 

 

 

 

 

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

 

 

 

 

 

 

0.6

 

IC = 1.0 mA

 

 

10 mA

30 mA

 

 

100 mA

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

IB, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

 

103

 

 

 

 

 

 

 

 

 

 

μA)

102

VCE = 30 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(

 

 

 

 

IC = ICES

 

 

 

 

 

CURRENT

101

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

TJ = 125°C

 

 

 

 

 

 

 

 

, COLLECTOR

 

 

 

 

 

 

 

 

 

 

10±1

 

75°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

±2

REVERSE

 

 

FORWARD

 

 

 

 

C

 

25°C

 

 

 

 

 

 

 

 

I

10

 

 

 

 

 

 

 

 

 

 

10±3

 

 

 

 

 

 

 

 

 

 

 

0.3

0.2

0.1

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

 

 

 

VBE, BASE±EMITTER VOLTAGE (VOLTS)

 

 

Figure 3. Collector Cut±Off Region

Motorola Small±Signal Transistors, FETs and Diodes Device Data

3

2N5400

2N5401

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

 

 

2.5

TJ = ± 55°C to 135°C

 

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

 

°C)

2.0

 

 

 

 

 

 

 

0.9

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(mV/

 

 

 

 

 

 

 

 

 

 

(VOLTS)VOLTAGEV,

0.8

 

 

 

 

 

 

 

 

 

 

1.5

θVB for VBE(sat)

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

 

 

 

 

COEFFICIENTTEMPERATURE

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VBE(sat) @ IC/IB = 10

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

0.6

 

 

 

 

 

 

 

 

 

 

 

θVC for VCE(sat)

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

 

 

±0.5

 

 

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

 

 

 

 

 

 

±1.0

 

 

 

 

 

 

 

 

 

 

 

0.2

VCE(sat) @ IC/IB = 10

 

 

 

 

 

 

 

±1.5

 

 

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

±2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

θ

±2.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

0.2 0.3

0.5

1.0

2.0 3.0

5.0

10

20

30

50

100

 

0.1

0.2 0.3

0.5

1.0

2.0 3.0

5.0

10

20

30

50

100

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

 

Figure 4. ªOnº Voltages

Figure 5. Temperature Coefficients

10.2 V

Vin

10 μs

INPUT PULSE

tr, tf 10 ns

DUTY CYCLE = 1.0%

VBB

VCC

+ 8.8 V

±30 V

100

3.0 k RC

0.25 μF

RB

Vout

 

 

 

 

5.1 k

 

Vin

100

1N914

Values Shown are for IC @ 10 mA

 

100

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

70

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

(pF)

30

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

Cibo

 

 

 

CAPACITANCE

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

7.0

 

 

 

 

 

 

 

 

Cobo

 

5.0

 

 

 

 

 

 

 

 

 

C,

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

 

 

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

 

 

 

 

VR, REVERSE VOLTAGE (VOLTS)

 

 

 

Figure 6. Switching Time Test Circuit

Figure 7. Capacitances

t, TIME (ns)

1000

 

 

 

 

 

 

 

 

 

 

 

700

IC/IB = 10

 

 

 

 

tr @ VCC = 120 V

 

500

TJ = 25°C

 

 

 

 

 

300

 

 

 

 

 

 

 

tr @ VCC = 30 V

 

200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

70

 

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

td @ VBE(off) = 1.0 V

 

 

 

 

 

 

 

 

VCC = 120 V

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

0.2 0.3

0.5

1.0

2.0 3.0

5.0

10

20

30

50

100

200

IC, COLLECTOR CURRENT (mA)

 

2000

 

 

 

 

 

 

 

 

 

 

 

 

 

1000

IC/IB = 10

 

 

 

 

 

tf @ VCC = 120 V

 

 

 

700

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

 

 

 

500

 

 

 

 

 

 

 

 

 

 

 

 

(ns)

300

 

tf @ VCC = 30 V

 

 

 

 

 

 

 

 

TIME

200

 

ts @ VCC = 120 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

t,

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

70

 

 

 

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2 0.3

0.5

1.0

2.0

3.0

5.0

10

20

30

50

100

200

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

Figure 8. Turn±On Time

Figure 9. Turn±Off Time

4

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5400 2N5401

PACKAGE DIMENSIONS

A

B

 

R

 

 

P

 

L

SEATING

F

PLANE

K

 

D

X X

J

 

G

H

SECTION X±X

V

C

1

N

 

N

CASE 029±04 (TO±226AA)

ISSUE AD

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.175

0.205

4.45

5.20

B

0.170

0.210

4.32

5.33

C

0.125

0.165

3.18

4.19

D

0.016

0.022

0.41

0.55

F

0.016

0.019

0.41

0.48

G

0.045

0.055

1.15

1.39

H

0.095

0.105

2.42

2.66

J

0.015

0.020

0.39

0.50

K

0.500

±±±

12.70

±±±

L

0.250

±±±

6.35

±±±

N

0.080

0.105

2.04

2.66

P

±±±

0.100

±±±

2.54

R

0.115

±±±

2.93

±±±

V

0.135

±±±

3.43

±±±

STYLE 1:

PIN 1. EMITTER

2.BASE

3.COLLECTOR

Motorola Small±Signal Transistors, FETs and Diodes Device Data

5

2N5400 2N5401

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA/EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

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MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

2N5400/D

*2N5400/D*

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