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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N5087/D

Amplifier Transistor

PNP Silicon

COLLECTOR 3

2 BASE

1 EMITTER

MAXIMUM RATINGS

Rating	Symbol	Value	Unit

Collector± Emitter Voltage	VCEO	50	Vdc
Collector± Base Voltage	VCBO	50	Vdc
Emitter± Base Voltage	VEBO	3.0	Vdc
Collector Current Ð Continuous	IC	50	mAdc
Total Device Dissipation @ TA = 25°C	PD	625	mW
Derate above 25°C		5.0	mW/°C

Total Device Dissipation @ TC = 25°C	PD	1.5	Watts
Derate above 25°C		12	mW/°C

Operating and Storage Junction	TJ, Tstg	± 55 to +150	°C
Temperature Range

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit

Thermal Resistance, Junction to Ambient	RqJA	200	°C/W
Thermal Resistance, Junction to Case	RqJC	83.3	°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

2N5087

Motorola Preferred Device

2 3

CASE 29±04, STYLE 1 TO±92 (TO±226AA)

Characteristic	Symbol	Min	Max	Unit

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage(1)	V(BR)CEO	50	Ð	Vdc
(IC = 1.0 mAdc, IB = 0)
Collector± Base Breakdown Voltage	V(BR)CBO	50	Ð	Vdc
(IC = 100 μAdc, IE = 0)
Collector Cutoff Current	ICBO	Ð	50	nAdc
(VCB = 35 Vdc, IE = 0)
Emitter Cutoff Current	IEBO	Ð	50	nAdc
(VEB = 3.0 Vdc, IC = 0)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

(Replaces 2N5086/D)

Motorola Small±Signal Transistors, FETs and Diodes Device Data	1
Motorola, Inc. 1997

2N5087

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic	Symbol	Min	Max	Unit

ON CHARACTERISTICS

DC Current Gain			hFE			Ð
(IC = 100 μAdc, VCE = 5.0 Vdc)				250	800
(IC = 1.0 mAdc, VCE = 5.0 Vdc)				250	Ð
(I = 10 mAdc, V	CE	= 5.0 Vdc)(1)		250	Ð
C	CE
Collector± Emitter Saturation Voltage			VCE(sat)	Ð	0.3	Vdc
(IC = 10 mAdc, IB = 1.0 mAdc)
Base ± Emitter On Voltage			VBE(on)	Ð	0.85	Vdc
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
SMALL± SIGNAL CHARACTERISTICS

Current± Gain Ð Bandwidth Product			fT	40	Ð	MHz
(IC = 500 μAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector±Base Capacitance			Ccb	Ð	4.0	pF
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Small±Signal Current Gain			hfe			Ð
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)				250	900
Noise Figure			NF			dB
(IC = 20 μAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)				Ð	2.0
(IC = 100 μAdc, VCE = 5.0 Vdc, RS = 3.0 kΩ, f = 1.0 kHz)				Ð	2.0

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5087

TYPICAL NOISE CHARACTERISTICS

								(VCE = ±5.0 Vdc, TA = 25°C)
	10											1.0
							BANDWIDTH = 1.0 Hz					7.0						BANDWIDTH = 1.0 Hz
	7.0							RS ≈ 0				5.0				IC = 1.0 mA			RS ≈ ∞
(nV)	5.0			IC = 10 μA							(pA)	3.0				IC = 1.0 mA
, NOISE VOLTAGE	5.0										,NOISE CURRENT	2.0
												2.0
					μ											300 μA
					30 A							1.0
	3.0				100 μA							1.0
	3.0											0.7
												0.7				100	μ
					300 μA							0.5				100	A
	2.0	1.0 mA			300 μA							0.5
n											n	0.3				30 μA
e											I

												0.2				10 μA
																10 μA
	1.0											0.1
	10	20	50	100	200	500	1.0 k	2.0 k	5.0 k	10 k		10	20	50	100	200	500	1.0 k	2.0 k	5.0 k	10 k
				f, FREQUENCY (Hz)											f, FREQUENCY (Hz)

Figure 1. Noise Voltage

Figure 2. Noise Current

NOISE FIGURE CONTOURS

(VCE = ±5.0 Vdc, TA = 25°C)

1.0 M

(OHMS)

500 k

BANDWIDTH = 1.0 Hz

(OHMS)

500 k

BANDWIDTH = 1.0 Hz

200 k

100 k

RESISTANCE

50 k

RESISTANCE

50 k

20 k

0.5 dB

20 k

10 k

0.5 dB

5.0 k

SOURCE

1.0 dB

SOURCE

1.0 dB

2.0 k

1.0 k

2.0 dB

1.0 k

2.0 dB

500

3.0 dB

200

5.0 dB

100

200 300

500 700

1.0 k

100

200

300

500 700

1.0 k

IC, COLLECTOR CURRENT (μA)

Figure 3. Narrow Band, 100 Hz

Figure 4. Narrow Band, 1.0 kHz

	1.0 M
(OHMS)	500 k							10 Hz to 15.7 kHz
	200 k
	100 k
RESISTANCE	50 k
	20 k
	10 k			0.5 dB
	5.0 k			0.5 dB

SOURCE
	2.0 k							1.0 dB
	1.0 k								2.0 dB
,	500
S
S
R									3.0 dB
R
	200
	200								5.0 dB
	100								5.0 dB
	100	20	30	50	70	100	200	300	500	700	1.0 k
	10	20	30	50	70	100	200	300	500	700	1.0 k
				IC, COLLECTOR CURRENT (μA)

Figure 5. Wideband

Noise Figure is Defined as:

	NF + 20 log10	en2 ) 4KTRS ) In 2RS2 1 2
		4KTRS

en	= Noise Voltage of the Transistor referred to the input. (Figure 3)
In	= Noise Current of the Transistor referred to the input. (Figure 4)
K	= Boltzman's Constant (1.38 x 10±23 j/°K)
T	= Temperature of the Source Resistance (°K)

RS = Source Resistance (Ohms)

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5087

TYPICAL STATIC CHARACTERISTICS

	400										TJ = 125°C
											TJ = 125°C
GAIN	200											25°C
	200

CURRENT												± 55°C
CURRENT	100
, DC	100
, DC	80
FE	80
FE
h
	60													VCE = 1.0 V
														VCE = 1.0 V
														VCE = 10 V
	40
	0.003	0.005	0.01	0.02	0.03	0.05 0.07	0.1	0.2	0.3	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100
								IC, COLLECTOR CURRENT (mA)

Figure 6. DC Current Gain

(VOLTS)	1.0							TA = 25°C
								TA = 25°C

VOLTAGE	0.8
VOLTAGE	IC = 1.0 mA	10 mA			50 mA			100 mA
, COLLECTOR±EMITTER	0.6
	0.4
	0.2

CE	0
V

	0.002 0.005 0.01 0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20
		IB, BASE CURRENT (mA)

Figure 7. Collector Saturation Region

	1.4	TJ = 25°C
	1.2	TJ = 25°C
	1.2
(VOLTS)	1.0
(VOLTS)	0.8
VOLTAGE	0.8	VBE(sat) @ IC/IB = 10
		VBE(sat) @ IC/IB = 10
	0.6		VBE(on)	@ VCE	= 1.0 V

V,
V,	0.4
	0.4
	0.2	VCE(sat) @ IC/IB = 10
		VCE(sat) @ IC/IB = 10
	0								50	100
	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100
			IC, COLLECTOR CURRENT (mA)

Figure 9. ªOnº Voltages

	100	TA = 25°C					IB = 400 μA
		TA = 25°C					IB = 400 μA
(mA)		PULSE WIDTH = 300 μs			350	μA
	80	DUTY CYCLE ≤		2.0%	350	μA
	80	DUTY CYCLE ≤		2.0%

CURRENT			300 μA					250 μA
	60							200 μA

,COLLECTOR								150 μA
	40							100 μA
								100 μA
	20							50 μA
C	20
I
	0	5.0	10	15	20	25	30	35	40
	0	5.0	10	15	20	25	30	35	40

VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

Figure 8. Collector Characteristics

°C)	1.6
°C)		*APPLIES for IC/IB ≤ hFE/2
(mV/		*APPLIES for IC/IB ≤ hFE/2
(mV/	0.8
COEFFICIENTS	0.8
COEFFICIENTS		*qVC for VCE(sat)					25°C to 125°C
							25°C to 125°C

	0							± 55°C to 25°C
TEMPERATURE								± 55°C to 25°C
TEMPERATURE	0.8	qVB for VBE						± 55°C to 25°C
	0.8
							25°C to 125°C
	1.6
,
V
θ	2.4
	2.4	0.2	0.5	1.0	2.0	5.0	10	20	50	100
	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100

IC, COLLECTOR CURRENT (mA)

Figure 10. Temperature Coefficients

4	Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5087

TYPICAL DYNAMIC CHARACTERISTICS

	500
	300								VCC = 3.0 V
	300								IC/IB = 10
	200								IC/IB = 10
	200								TJ = 25	°
									TJ = 25	C
(ns)	100
(ns)	70
t, TIME	50
t, TIME	30
	30							tr
	20							tr
	10		td @ VBE(off) = 0.5 V
	10
	7.0
	5.0				7.0		20	30	50	70	100
	1.0	2.0	3.0	5.0	7.0	10	20	30	50	70	100
				IC, COLLECTOR CURRENT (mA)

Figure 11. Turn±On Time

(MHz)	500
(MHz)
PRODUCT		TJ = 25°C
	300			VCE = 20 V

Ð BANDWIDTH	200					5.0 V
	200

, CURRENT±GAIN	100
	70
	50
T	0.5	0.7	1.0	2.0	3.0	5.0	7.0	10	20	30	50
f

				IC, COLLECTOR CURRENT (mA)

Figure 13. Current±Gain Ð Bandwidth Product

	1000							VCC = ±3.0 V
	700							VCC = ±3.0 V
	500							IC/IB = 10
	300					ts		IB1 = IB2
	300					ts		°
								TJ = 25 C
	200
(ns)
TIME	100
TIME	70
t,	70
	50					tf
	30					tf
	30
	20
	10	±2.0
	±1.0	±2.0	±3.0	±5.0 ±7.0	±10	±20	±30	±50 ±70 ±100

IC, COLLECTOR CURRENT (mA)

Figure 12. Turn±Off Time

	10
	7.0								TJ = 25°C
	7.0
							Cib
(pF)	5.0
(pF)
CAPACITANCE	3.0
CAPACITANCE	2.0								Cob
C,	2.0								Cob
	1.0
	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50

VR, REVERSE VOLTAGE (VOLTS)

Figure 14. Capacitance

	20							VCE = ±10 Vdc				200	V			= 10 Vdc
								VCE = ±10 Vdc			mhos)		V	CE		= 10 Vdc
	10							f = 1.0 kHz				100	f = 1.0 kHz
)	10							T	= 25°C			100	T		= 25°C
Ω	7.0							A			m	70	A
(k	5.0										(	50
INPUT, IMPEDANCE	5.0										ADMITTANCE	50
	3.0											30
	2.0											20
	1.0											10
	0.7											7.0
ie	0.5										OUTPUT	5.0
h											,
											oe
											oe
	0.3										h	3.0
	0.3											3.0
	0.2							20	50	100		2.0										20	50	100
	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100		0.1			0.2		0.5	1.0	2.0	5.0	10	20	50	100

IC, COLLECTOR CURRENT (mA)	IC, COLLECTOR CURRENT (mA)
Figure 15. Input Impedance	Figure 16. Output Admittance

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5087
		1.0
TRANSIENT THERMAL RESISTANCE		0.7	D = 0.5
		0.5	D = 0.5
		0.5
		0.3		0.2
	(NORMALIZED)	0.2		0.2
		0.2
		0.1		0.1
		0.1														FIGURE 19
		0.07		0.05												FIGURE 19		DUTY CYCLE, D = t1/t2
		0.07		0.05										P(pk)				DUTY CYCLE, D = t1/t2
		0.05		0.02										P(pk)				D CURVES APPLY FOR POWER
		0.03		0.02												t1		PULSE TRAIN SHOWN
		0.03	0.01															READ TIME AT t1 (SEE AN±569)
		0.02																READ TIME AT t1 (SEE AN±569)
							SINGLE PULSE									t2		ZθJA(t) = r(t) •RθJA
							SINGLE PULSE									t2		ZθJA(t) = r(t) •RθJA
r(t)																		TJ(pk) ± TA = P(pk) ZθJA(t)
		0.01																TJ(pk) ± TA = P(pk) ZθJA(t)
		0.01	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200	500	1.0 k	2.0 k	5.0 k 10 k	20 k		100 k
		0.01	0.02	0.05	0.1	0.2	0.5	1.0	2.0	5.0	10	20	50	100	200	500	1.0 k	2.0 k	5.0 k 10 k	20 k	50 k	100 k
												t, TIME (ms)

Figure 17. Thermal Response

	400				1.0 ms		10 μs
							10 μs

(mA)	200					100 μs
						100 μs

CURRENT	100			TC = 25°C			1.0 s
	60		TA = 25°C		dc
	60
	40				dc
,COLLECTOR	40				dc
	20	TJ = 150°C
	10	CURRENT LIMIT
C	10	CURRENT LIMIT
I		THERMAL LIMIT
	6.0	THERMAL LIMIT
	6.0	SECOND BREAKDOWN LIMIT
	4.0	SECOND BREAKDOWN LIMIT
	4.0	4.0	6.0	8.0	10	20	40
	2.0	4.0	6.0	8.0	10	20	40
		VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)

The safe operating area curves indicate IC±VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve.

The data of Figure 18 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty

cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal

limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown.

Figure 18. Active±Region Safe Operating Area

	104
	103	VCC = 30 V
(nA)	103
(nA)					ICEO
CURRENT	102				ICEO
	102
	101
, COLLECTOR	101							ICBO
								AND
	100						ICEX @ VBE(off) = 3.0 V

C	10±1
I	10±1
	10±2	± 20	0	+ 20	+ 40	+ 60	+ 80	+ 100 + 120	+ 140	+ 160
	± 40	± 20	0	+ 20	+ 40	+ 60	+ 80	+ 100 + 120	+ 140	+ 160
				TJ, JUNCTION TEMPERATURE (°C)

Figure 19. Typical Collector Leakage Current

DESIGN NOTE: USE OF THERMAL RESPONSE DATA

A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles.

To find ZθJA(t), multiply the value obtained from Figure 17 by the steady state value RθJA.

Example:

The 2N5087 is dissipating 2.0 watts peak under the following conditions:

t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2)

Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22.

The peak rise in junction temperature is therefore

T = r(t) x P(pk) x RθJA = 0.22 x 2.0 x 200 = 88°C. For more information, see AN±569.

6	Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5087

PACKAGE DIMENSIONS

	A	B
		B
	R
		P
		L
	SEATING	F
	PLANE	K
		D
	X X	J
		G
	H	SECTION X±X
	V	SECTION X±X
	V	C
	1	N
		N

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.175	0.205	4.45	5.20
B	0.170	0.210	4.32	5.33
C	0.125	0.165	3.18	4.19
D	0.016	0.022	0.41	0.55
F	0.016	0.019	0.41	0.48
G	0.045	0.055	1.15	1.39
H	0.095	0.105	2.42	2.66
J	0.015	0.020	0.39	0.50
K	0.500	±±±	12.70	±±±
L	0.250	±±±	6.35	±±±
N	0.080	0.105	2.04	2.66
P	±±±	0.100	±±±	2.54
R	0.115	±±±	2.93	±±±
V	0.135	±±±	3.43	±±±

CASE 029±04 (TO±226AA)

ISSUE AD

STYLE 1:

PIN 1. EMITTER

2.BASE

3.COLLECTOR

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5087

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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Motorola Small±Signal Transistors, FETs and Diodes Device2N5087/DData

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