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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N5460/D

JFET Amplifiers

P±Channel Ð Depletion

 

 

 

 

 

 

2 DRAIN

 

 

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GATE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1 SOURCE

MAXIMUM RATINGS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rating

Symbol

Value

Unit

 

 

 

 

 

 

 

 

 

 

Drain± Gate Voltage

VDG

40

 

Vdc

 

Reverse Gate ± Source Voltage

VGSR

40

 

Vdc

 

Forward Gate Current

IG(f)

10

 

mAdc

 

Total Device Dissipation @ TA = 25°C

PD

350

 

mW

 

Derate above 25°C

 

2.8

 

mW/°C

 

 

 

 

 

 

 

 

 

 

Junction Temperature Range

TJ

± 65 to +135

 

°C

 

Storage Channel Temperature Range

Tstg

± 65 to +150

 

°C

 

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

2N5460 thru 2N5462

1

2 3

CASE 29±04, STYLE 7 TO±92 (TO±226AA)

Characteristic

 

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate± Source Breakdown Voltage

 

V(BR)GSS

40

Ð

Ð

Vdc

(IG = 10 μAdc, VDS = 0)

2N5460, 2N5461, 2N5462

 

 

 

 

 

 

 

Gate Reverse Current

 

IGSS

 

 

 

 

 

 

(VGS = 20 Vdc, VDS = 0)

2N5460, 2N5461, 2N5462

 

Ð

Ð

5.0

nAdc

(VGS = 30 Vdc, VDS = 0)

 

 

 

 

 

 

 

 

(VGS = 20 Vdc, VDS = 0, TA = 100°C)

2N5460, 2N5461, 2N5462

 

Ð

Ð

1.0

μAdc

(VGS = 30 Vdc, VDS = 0, TA = 100°C)

 

 

 

 

 

 

 

 

Gate± Source Cutoff Voltage

2N5460

VGS(off)

0.75

Ð

6.0

Vdc

(VDS = 15 Vdc, ID = 1.0 μAdc)

2N5461

 

1.0

Ð

7.5

 

 

 

 

2N5462

 

1.8

Ð

9.0

 

 

 

 

 

 

 

 

 

 

 

 

Gate± Source Voltage

 

VGS

 

 

 

Vdc

(VDS = 15 Vdc, ID = 0.1 mAdc)

2N5460

 

0.5

Ð

4.0

 

 

 

(VDS = 15 Vdc, ID = 0.2 mAdc)

2N5461

 

0.8

Ð

4.5

 

 

 

(VDS = 15 Vdc, ID = 0.4 mAdc)

2N5462

 

1.5

Ð

6.0

 

 

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Zero± Gate±Voltage Drain Current

2N5460

IDSS

± 1.0

Ð

± 5.0

mAdc

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)

2N5461

 

± 2.0

Ð

± 9.0

 

 

 

 

2N5462

 

± 4.0

Ð

± 16

 

 

 

 

 

 

 

 

 

 

 

 

SMALL± SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Forward Transfer Admittance

2N5460

yfs

1000

Ð

4000

mmhos

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)

2N5461

 

1500

Ð

5000

 

 

 

 

2N5462

 

2000

Ð

6000

 

 

 

 

 

 

 

 

 

 

 

Output Admittance (VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)

yos

Ð

Ð

75

mmhos

Input Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

Ð

5.0

7.0

pF

Reverse Transfer Capacitance (VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Crss

Ð

1.0

2.0

pF

FUNCTIONAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Noise Figure

 

NF

Ð

1.0

2.5

dB

(VDS = 15 Vdc, VGS = 0, RG = 1.0 Megohm, f = 100 Hz, BW = 1.0 Hz)

 

 

 

 

 

 

 

Equivalent Short±Circuit Input Noise Voltage

 

en

Ð

60

115

 

 

 

 

 

(VDS = 15 Vdc, VGS = 0, f = 100 Hz, BW = 1.0 Hz)

 

 

 

 

nV Hz

 

 

 

 

 

 

 

Motorola Small±Signal Transistors, FETs and Diodes Device Data

1

Motorola, Inc. 1997

 

2N5460 thru 2N5462

DRAIN CURRENT versus GATE

SOURCE VOLTAGE

 

4.0

 

 

 

 

 

 

 

VDS = 15 V

 

 

3.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(mA)

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

2.5

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

TA = ± 55°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, DRAIN

1.5

 

 

 

 

25°C

 

 

 

 

 

 

 

 

 

 

125°C

 

 

 

 

D

1.0

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

 

 

 

VGS, GATE±SOURCE VOLTAGE (VOLTS)

 

 

 

 

 

Figure 1. VGS(off) = 2.0 Volts

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

9.0

 

 

 

 

 

 

 

VDS = 15 V

 

(mA)

8.0

 

 

 

 

 

 

 

 

 

 

7.0

 

 

TA = ± 55°C

 

 

 

 

 

CURRENT

6.0

 

 

 

25°C

 

 

 

 

 

 

5.0

 

 

 

 

125°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, DRAIN

4.0

 

 

 

 

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

 

 

 

I

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

 

 

0

0.5

1.0

 

1.5

2.0

2.5

 

3.0

3.5

4.0

 

0

 

 

 

 

 

VGS, GATE±SOURCE VOLTAGE (VOLTS)

 

 

Figure 2. VGS(off) = 4.0 Volts

16

VDS = 15 V

14

(mA)

12

 

 

 

 

 

 

 

 

CURRENT

10

 

 

TA = ± 55°C

 

 

 

 

 

 

 

 

 

 

 

DRAIN,

8.0

 

 

25°C

 

 

 

 

 

6.0

 

 

 

125°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

4.0

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

8.0

 

0

VGS, GATE±SOURCE VOLTAGE (VOLTS)

Figure 3. VGS(off) = 5.0 Volts

 

 

FORWARD TRANSFER ADMITTANCE

 

mhos)

 

 

versus DRAIN CURRENT

 

 

4000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(

3000

 

 

 

 

 

 

 

m

 

 

 

 

 

 

 

 

ADMITTANCE

2000

 

 

 

 

 

 

 

TRANSFER

1000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

700

 

 

 

 

 

 

 

FORWARD

500

 

 

 

 

 

 

 

300

 

 

 

 

VDS = 15 V

 

 

 

 

 

 

 

f = 1.0 kHz

 

fs

200

 

 

 

 

 

 

 

Y

0.3

0.5

0.7

1.0

2.0

3.0

4.0

 

0.2

 

 

 

ID, DRAIN CURRENT (mA)

 

 

 

 

 

 

Figure 4. VGS(off) = 2.0 Volts

 

 

mhos)

10000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

m

7000

 

 

 

 

 

 

 

(

 

 

 

 

 

 

 

ADMITTANCE

5000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TRANSFER

3000

 

 

 

 

 

 

 

2000

 

 

 

 

 

 

 

FORWARD

 

 

 

 

 

 

 

1000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

700

 

 

 

 

VDS = 15 V

 

 

 

 

 

 

 

 

f = 1.0 kHz

 

fs

500

 

 

 

 

 

 

 

Y

0.5

0.7

1.0

2.0

3.0

5.0

7.0

 

 

 

 

 

 

ID, DRAIN CURRENT (mA)

 

 

 

 

 

 

Figure 5. VGS(off) = 4.0 Volts

 

 

mhos)

10000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

m

7000

 

 

 

 

 

 

 

(

 

 

 

 

 

 

 

ADMITTANCE

3000

 

 

 

 

 

 

 

 

5000

 

 

 

 

 

 

 

TRANSFER

2000

 

 

 

 

 

 

 

FORWARD

1000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

700

 

 

 

 

VDS = 15 V

 

 

 

 

 

 

f = 1.0 kHz

 

fs

 

 

 

 

 

 

500

 

 

 

 

 

 

 

Y

0.7

1.0

2.0

3.0

5.0

7.0

10

 

0.5

 

 

 

ID, DRAIN CURRENT (mA)

 

 

 

Figure 6. VGS(off) = 5.0 Volts

2

Motorola Small±Signal Transistors, FETs and Diodes Device Data

 

1000

 

 

 

 

 

 

(k ohms)

700

 

 

 

 

VDS = 15 V

 

500

 

 

 

 

f = 1.0 kHz

 

300

 

 

 

 

 

 

RESISTANCE

 

 

 

 

 

 

200

 

 

 

 

IDSS = 3.0 mA

 

100

 

 

 

 

 

 

 

 

 

 

 

70

 

 

 

 

 

 

, OUTPUT

 

 

 

 

6.0 mA

50

 

 

 

 

 

 

 

 

10 mA

 

30

 

 

 

 

 

 

 

 

 

 

 

oss

20

 

 

 

 

 

 

r

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

0.1

0.2

0.5

1.0

2.0

5.0

10

ID, DRAIN CURRENT (mA)

Figure 7. Output Resistance

versus Drain Current

 

 

 

 

2N5460 thru

2N5462

 

10

 

 

f = 1.0 MHz

 

 

9.0

 

 

 

 

 

 

VGS = 0

 

 

8.0

 

 

 

 

 

 

 

 

(pF)

7.0

 

 

 

 

 

 

 

 

 

CAPACITANCE

6.0

 

 

Ciss

 

5.0

 

 

 

 

 

 

 

4.0

 

 

 

 

3.0

 

 

 

 

C,

 

 

 

 

 

 

 

 

 

 

2.0

 

Coss

 

 

 

1.0

 

Crss

 

 

 

0

 

 

 

 

0

10

20

30

40

VDS, DRAIN±SOURCE VOLTAGE (VOLTS)

Figure 8. Capacitance versus

Drain±Source Voltage

 

5.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VDS = 15 V

 

 

4.0

 

 

 

 

 

VGS = 0

 

(dB)

 

 

 

 

 

RG = 1.0 Megohm

 

 

 

 

 

 

FIGURE

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NF, NOISE

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

0

20

30

50

 

 

 

 

 

 

10

100

200 300 500

1000

2000 3000

10,000

 

 

 

 

 

f, FREQUENCY (Hz)

 

 

Figure 9. Noise Figure versus Frequency

 

10

 

 

 

 

 

9.0

 

 

VDS = 15 V

 

 

8.0

 

 

VGS = 0

 

(dB)

7.0

 

 

f = 100 Hz

 

 

 

 

 

FIGURE

 

 

 

 

6.0

 

 

 

 

5.0

 

 

 

 

NF, NOISE

 

 

 

 

4.0

 

 

 

 

3.0

 

 

 

 

 

2.0

 

 

 

 

 

1.0

 

 

 

 

 

0

 

 

 

 

 

1.0

10

100

1000

10,000

RS, SOURCE RESISTANCE (k Ohms)

Figure 10. Noise Figure versus

Source Resistance

vi

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

COMMON SOURCE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Crss

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

y PARAMETERS FOR FREQUENCIES

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BELOW 30 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

 

 

 

 

 

 

r

 

 

 

C

 

 

 

 

 

 

| y

fs

| v

i

 

 

 

yis = jω Ciss

 

 

 

 

 

 

 

 

 

 

iss

 

 

 

 

oss

 

 

 

oss

 

 

 

 

 

 

 

 

 

yos = jω Cosp * + 1/ross

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

yfs = yfs |

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

yrs = ±jω Crss

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

* Cosp is Coss in parallel with Series Combination of Ciss and Crss.

NOTE:

1.Graphical data is presented for dc conditions. Tabular data is given for pulsed conditions (Pulse Width = 630 ms,

Duty Cycle = 10%).

Figure 11. Equivalent Low Frequency Circuit

Motorola Small±Signal Transistors, FETs and Diodes Device Data

3

2N5460 thru 2N5462

PACKAGE DIMENSIONS

 

A

B

 

 

R

 

 

 

 

P

 

 

L

SEATING

 

F

PLANE

 

K

X X

D

G

 

H

J

V

C

1

SECTION X±X

N

 

N

CASE 029±04 (TO±226AA)

ISSUE AD

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.175

0.205

4.45

5.20

B

0.170

0.210

4.32

5.33

C

0.125

0.165

3.18

4.19

D

0.016

0.022

0.41

0.55

F

0.016

0.019

0.41

0.48

G

0.045

0.055

1.15

1.39

H

0.095

0.105

2.42

2.66

J

0.015

0.020

0.39

0.50

K

0.500

±±±

12.70

±±±

L

0.250

±±±

6.35

±±±

N

0.080

0.105

2.04

2.66

P

±±±

0.100

±±±

2.54

R

0.115

±±±

2.93

±±±

V

0.135

±±±

3.43

±±±

STYLE 7:

PIN 1. SOURCE

2.DRAIN

3.GATE

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

 

Mfax is a trademark of Motorola, Inc.

How to reach us:

 

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P.O. Box 5405, Denver, Colorado 80217. 303±675±2140 or 1±800±441±2447

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± US & Canada ONLY 1±800±774±1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

INTERNET: http://motorola.com/sps

4

Motorola Small±Signal Transistors, FETs and Diodes Device2N5460/DData

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