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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N3905/D

General Purpose Transistors

PNP Silicon

 

 

 

 

COLLECTOR

 

 

 

 

3

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BASE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

EMITTER

MAXIMUM RATINGS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rating

Symbol

Value

 

Unit

 

 

 

 

 

 

 

 

Collector± Emitter Voltage

VCEO

40

 

 

Vdc

Collector± Base Voltage

VCBO

40

 

 

Vdc

Emitter± Base Voltage

VEBO

5.0

 

 

Vdc

Collector Current Ð Continuous

IC

200

 

 

mAdc

Total Device Dissipation @ TA = 25°C

PD

625

 

 

mW

Derate above 25°C

 

5.0

 

mW/°C

 

 

 

 

 

 

 

 

Total Power Dissipation @ TA = 60°C

PD

250

 

 

mW

Total Device Dissipation @ TC = 25°C

PD

1.5

 

 

Watts

Derate above 25°C

 

12

 

mW/°C

 

 

 

 

 

 

 

 

Operating and Storage Junction

TJ, Tstg

± 55 to +150

 

°C

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS*

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

Max

 

Unit

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to Ambient

RqJA

200

 

 

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

 

 

°C/W

*Indicates Data in addition to JEDEC Requirements.

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

2N3905

2N3906*

*Motorola Preferred Device

1

2 3

CASE 29±04, STYLE 1 TO±92 (TO±226AA)

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

Collector± Emitter Breakdown Voltage (1)

V

40

Ð

Vdc

(IC = 1.0 mAdc, IB = 0)

(BR)CEO

 

 

 

 

 

 

 

Collector± Base Breakdown Voltage

V(BR)CBO

40

Ð

Vdc

(IC = 10 mAdc, IE = 0)

 

 

 

 

Emitter± Base Breakdown Voltage

V(BR)EBO

5.0

Ð

Vdc

(IE = 10 mAdc, IC = 0)

 

 

 

 

Base Cutoff Current

IBL

Ð

50

nAdc

(VCE = 30 Vdc, VEB = 3.0 Vdc)

 

 

 

 

Collector Cutoff Current

ICEX

Ð

50

nAdc

(VCE = 30 Vdc, VEB = 3.0 Vdc)

 

 

 

 

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

 

 

 

 

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola, Inc. 1996

2N3905

2N3906

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

 

 

 

 

 

 

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

 

ON CHARACTERISTICS(1)

 

 

 

 

 

DC Current Gain

 

hFE

30

Ð

Ð

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

2N3905

 

 

 

 

 

2N3906

 

60

Ð

 

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

2N3905

 

40

Ð

 

 

 

 

2N3906

 

80

Ð

 

(IC = 10 mAdc, VCE = 1.0 Vdc)

2N3905

 

50

150

 

 

 

 

2N3906

 

100

300

 

(IC = 50 mAdc, VCE = 1.0 Vdc)

2N3905

 

30

Ð

 

 

 

 

2N3906

 

60

Ð

 

(IC = 100 mAdc, VCE = 1.0 Vdc)

2N3905

 

15

Ð

 

 

 

 

2N3906

 

30

Ð

 

 

 

 

 

 

 

 

Collector± Emitter Saturation Voltage

 

VCE(sat)

Ð

0.25

Vdc

(IC = 10 mAdc, IB = 1.0 mAdc)

 

 

 

(IC = 50 mAdc, IB = 5.0 mAdc

 

 

Ð

0.4

 

Base ± Emitter Saturation Voltage

 

VBE(sat)

0.65

0.85

Vdc

(IC = 10 mAdc, IB = 1.0 mAdc)

 

 

 

(IC = 50 mAdc, IB = 5.0 mAdc)

 

 

Ð

0.95

 

SMALL± SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

Current± Gain Ð Bandwidth Product

 

fT

200

Ð

MHz

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

2N3905

 

 

 

 

 

2N3906

 

250

Ð

 

 

 

 

 

 

 

 

Output Capacitance

 

Cobo

Ð

4.5

pF

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

 

 

 

 

 

Input Capacitance

 

Cibo

Ð

10.0

pF

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

 

 

 

 

 

Input Impedance

 

hie

0.5

8.0

k Ω

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

2N3905

 

 

 

 

 

2N3906

 

2.0

12

 

 

 

 

 

 

 

 

Voltage Feedback Ratio

 

hre

0.1

5.0

X 10± 4

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

2N3905

 

 

 

 

 

2N3906

 

0.1

10

 

 

 

 

 

 

 

 

Small±Signal Current Gain

 

hfe

50

200

Ð

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

2N3905

 

 

 

 

 

2N3906

 

100

400

 

 

 

 

 

 

 

 

Output Admittance

 

hoe

1.0

40

mmhos

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

2N3905

 

 

 

 

 

2N3906

 

3.0

60

 

 

 

 

 

 

 

 

Noise Figure

 

NF

 

 

dB

(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 k Ω, f = 1.0 kHz)

2N3905

 

Ð

5.0

 

 

 

 

2N3906

 

Ð

4.0

 

 

 

 

 

 

 

 

SWITCHING CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

Delay Time

 

(VCC = 3.0 Vdc, VBE = 0.5 Vdc,

 

td

Ð

35

ns

Rise Time

 

IC = 10 mAdc, IB1 = 1.0 mAdc)

 

tr

Ð

35

ns

Storage Time

 

2N3905

ts

Ð

200

ns

 

 

 

2N3906

 

Ð

225

 

 

 

(VCC = 3.0 Vdc, IC = 10 mAdc,

 

 

 

 

 

Fall Time

 

 

tf

Ð

60

ns

 

IB1 = IB2 = 1.0 mAd

2N3905

 

 

 

2N3906

 

Ð

75

 

 

 

 

 

 

 

 

 

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

2

Motorola Small±Signal Transistors, FETs and Diodes Device Data

 

 

 

 

 

2N3905

2N3906

 

3 V

 

 

< 1 ns

3 V

 

 

 

 

+9.1 V

 

 

 

 

 

 

 

 

 

< 1 ns

275

 

 

275

 

 

 

 

 

 

 

+0.5 V

10 k

 

0

10 k

 

 

 

 

 

 

 

 

 

 

CS < 4 pF*

 

1N916

CS < 4 pF*

10.6 V

300 ns

10 < t1

< 500 ms

 

 

 

 

10.9 V

 

 

 

DUTY CYCLE = 2%

 

t1

 

 

 

 

DUTY CYCLE = 2%

 

 

 

 

* Total shunt capacitance of test jig and connectors

 

 

 

Figure 1. Delay and Rise Time

 

 

Figure 2. Storage and Fall Time

 

 

Equivalent Test Circuit

 

 

Equivalent Test Circuit

 

TYPICAL TRANSIENT CHARACTERISTICS

 

10

 

 

 

 

 

 

 

 

 

 

 

7.0

 

 

 

 

 

 

 

 

 

 

(pF)

5.0

 

 

 

Cobo

 

 

 

 

 

CAPACITANCE

3.0

 

 

 

 

Cibo

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0

0.2

0.3

0.5

0.7 1.0

2.0

3.0

5.0 7.0

10

20

30 40

 

0.1

 

 

 

 

 

REVERSE BIAS (VOLTS)

 

 

 

Figure 3. Capacitance

TJ = 25°C

 

 

 

 

 

 

 

 

 

 

 

TJ = 125°C

 

 

 

 

 

 

 

 

 

 

 

 

5000

 

 

 

 

 

 

 

 

 

 

 

 

3000

VCC = 40 V

 

 

 

 

 

 

 

 

 

 

IC/IB = 10

 

 

 

 

 

 

 

 

 

 

2000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(pC)

1000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Q, CHARGE

700

 

 

 

 

 

 

 

 

 

 

 

500

 

 

 

 

 

 

 

 

 

 

 

300

 

 

 

 

 

 

 

 

 

 

 

 

200

QT

 

 

 

 

 

 

QA

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

70

 

 

 

 

 

 

 

 

 

 

 

 

50

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

 

1.0

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

Figure 4. Charge Data

 

500

 

 

 

 

 

 

 

 

 

 

500

 

300

 

 

 

 

 

 

IC/IB = 10

 

300

 

 

 

 

 

 

 

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

 

200

 

100

 

 

 

 

 

 

 

 

 

(ns)

100

(ns)

70

 

 

 

 

tr

@ VCC = 3.0 V

 

FALL TIME

70

50

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

15 V

 

TIME

30

 

 

 

 

 

 

 

 

,

30

 

 

 

 

 

 

 

 

 

f

 

20

 

 

 

 

 

 

 

 

 

t

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

40 V

 

 

 

10

 

 

 

 

 

 

 

 

2.0 V

 

10

 

7

 

 

 

td @ VOB = 0 V

 

 

 

 

7

 

5

2.0

3.0

5.0 7.0 10

20

30

50

70

100

200

 

5

 

1.0

 

 

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC = 40 V

 

 

 

 

 

 

 

 

 

 

IB1 = IB2

 

 

 

 

 

 

 

IC/IB = 20

 

 

 

 

 

 

 

 

 

 

IC/IB = 10

 

 

 

 

 

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

Figure 5. Turn ± On Time

Figure 6. Fall Time

Motorola Small±Signal Transistors, FETs and Diodes Device Data

3

2N3905 2N3906

TYPICAL AUDIO SMALL±SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS

(VCE = ±5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

 

5.0

SOURCE RESISTANCE = 200 W

 

 

 

 

 

 

 

 

 

 

 

4.0

IC = 1.0 mA

 

 

 

 

 

 

 

(dB)

 

 

SOURCE RESISTANCE = 200 W

 

 

 

 

 

 

 

 

 

 

 

 

IC = 0.5 mA

 

 

 

 

 

FIGURE

 

 

 

 

 

 

 

 

3.0

 

 

 

 

SOURCE RESISTANCE = 2.0 k

 

 

 

 

 

 

 

 

 

 

IC = 50 mA

 

 

 

NF, NOISE

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0

SOURCE RESISTANCE = 2.0 k

 

 

 

 

 

 

IC = 100 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

0.2

0.4

1.0

2.0

4.0

10

20

40

100

 

0.1

 

 

 

 

f, FREQUENCY (kHz)

 

 

 

Figure 7.

 

12

 

 

 

 

 

 

 

 

 

 

 

f = 1.0 kHz

 

IC = 1.0 mA

 

 

 

 

 

10

 

 

 

IC = 0.5 mA

 

 

 

 

(dB)

 

 

 

 

 

 

 

 

8

 

 

 

 

 

 

 

 

 

FIGURE

 

 

 

 

 

 

 

 

 

6

 

 

 

 

 

 

 

 

 

NF, NOISE

 

 

 

 

 

 

 

 

 

4

 

 

 

 

 

 

 

IC = 50 mA

 

2

 

 

 

 

 

 

 

IC = 100 mA

 

 

 

 

 

 

 

 

 

 

 

0

0.2

0.4

1.0

2.0

4.0

10

20

40

100

 

0.1

 

 

 

Rg, SOURCE RESISTANCE (k OHMS)

 

 

Figure 8.

h PARAMETERS

 

 

 

 

 

 

 

 

(VCE = ±10 Vdc, f = 1.0 kHz, TA = 25°C)

 

 

 

 

 

 

 

 

 

 

300

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

mhos)

70

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENTGAIN

200

 

 

 

 

 

 

 

 

 

 

ADMITTANCE (m

50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

, DC

70

 

 

 

 

 

 

 

 

 

 

OUTPUT

 

 

 

 

 

 

 

 

 

 

 

fe

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

oe

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

h

7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

30

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

 

5

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

 

0.1

 

0.1

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

Figure 9. Current Gain

Figure 10. Output Admittance

 

20

 

 

 

 

 

 

 

 

 

±4 )

10

 

 

 

 

 

 

 

 

 

 

 

7.0

INPUTIMPEDANCE (k OHMS)

10

 

 

 

 

 

 

 

 

 

FEEDBACK RATIO (X 10

 

 

 

 

 

 

 

 

 

 

7.0

 

 

 

 

 

 

 

 

 

5.0

5.0

 

 

 

 

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

2.0

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

VOLTAGE

1.0

ie

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,

0.7

 

0.3

 

 

 

 

 

 

 

 

 

re

 

 

 

 

 

 

 

 

 

 

h

 

 

0.2

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

0.5

 

0.1

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

 

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

Figure 11. Input Impedance

Figure 12. Voltage Feedback Ratio

4

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N3905 2N3906

TYPICAL STATIC CHARACTERISTICS

(NORMALIZED)

2.0

 

 

 

 

 

TJ = +125°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

= 1.0 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE

 

1.0

 

 

 

 

 

+25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

GAIN

 

 

 

 

 

± 55°C

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,DC CURRENT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

 

0.1

 

 

 

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

 

 

 

Figure 13. DC Current Gain

(VOLTS)

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

VOLTAGE

0.8

 

 

 

 

10 mA

 

 

30 mA

 

 

 

 

100 mA

 

IC = 1.0 mA

 

 

 

 

 

 

 

 

 

 

 

0.6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

EMITTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, COLLECTOR

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

 

0.01

IB, BASE CURRENT (mA)

Figure 14. Collector Saturation Region

 

1.0

 

 

 

 

 

 

°C)

1.0

 

 

TJ = 25°C

 

 

VBE(sat) @ IC/IB

= 10

 

 

 

 

 

(mV/

 

 

0.8

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

TEMPERATURE COEFFICIENTS

 

 

 

 

 

VBE @ VCE = 1.0 V

 

V, VOLTAGE (VOLTS)

 

 

 

 

 

 

0.6

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

± 0.5

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

± 1.0

0.2

 

 

 

VCE(sat) @ IC/IB = 10

 

 

 

 

 

 

 

± 1.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

V

 

 

0

 

 

 

 

 

 

q

± 2.0

 

2.0

5.0

10

20

50

100

200

 

1.0

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

qVC FOR VCE(sat)

 

+25°C TO +125°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

± 55°C TO +25°C

 

 

 

 

 

 

 

 

 

 

+25°C TO +125°C

 

 

 

 

 

 

 

 

± 55°C TO +25°C

 

 

 

qVB FOR VBE(sat)

 

 

 

 

 

 

0

20

40

60

80

100

120

140

160

180

200

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

Figure 15. ªONº Voltages

Figure 16. Temperature Coefficients

Motorola Small±Signal Transistors, FETs and Diodes Device Data

5

2N3905 2N3906

PACKAGE DIMENSIONS

A

B

 

R

 

 

P

 

L

SEATING

F

PLANE

K

 

D

X X

J

 

G

H

SECTION X±X

V

C

1

N

 

N

CASE 029±04 (TO±226AA)

ISSUE AD

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.175

0.205

4.45

5.20

B

0.170

0.210

4.32

5.33

C

0.125

0.165

3.18

4.19

D

0.016

0.022

0.41

0.55

F

0.016

0.019

0.41

0.48

G

0.045

0.055

1.15

1.39

H

0.095

0.105

2.42

2.66

J

0.015

0.020

0.39

0.50

K

0.500

±±±

12.70

±±±

L

0.250

±±±

6.35

±±±

N

0.080

0.105

2.04

2.66

P

±±±

0.100

±±±

2.54

R

0.115

±±±

2.93

±±±

V

0.135

±±±

3.43

±±±

STYLE 1:

PIN 1. EMITTER

2.BASE

3.COLLECTOR

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

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2N3905/D

*2N3905/D*

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