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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N5209/D

Amplifier Transistors

NPN Silicon

 

 

 

 

COLLECTOR

 

 

 

 

3

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BASE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

EMITTER

MAXIMUM RATINGS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rating

Symbol

Value

 

Unit

 

 

 

 

 

 

 

 

Collector± Emitter Voltage

VCEO

50

 

 

Vdc

Collector± Base Voltage

VCBO

50

 

 

Vdc

Emitter± Base Voltage

VEBO

4.0

 

 

Vdc

Collector Current Ð Continuous

IC

50

 

 

mAdc

Total Device Dissipation @ TA = 25°C

PD

625

 

 

mW

Derate above 25°C

 

5.0

 

 

mW/°C

 

 

 

 

 

 

 

 

Total Device Dissipation @ TC = 25°C

PD

1.5

 

 

Watts

Derate above 25°C

 

12

 

 

mW/°C

 

 

 

 

 

 

 

 

Operating and Storage Junction

TJ, Tstg

± 55 to +150

 

°C

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

Max

 

Unit

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to

RqJA

200

 

 

°C/W

Ambient

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to Case

RqJC

83.3

 

 

°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

2N5209

2N5210

1

2 3

CASE 29±04, STYLE 1 TO±92 (TO±226AA)

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

OFF CHARACTERISTICS

 

 

 

 

 

 

 

 

 

Collector± Emitter Breakdown Voltage

V(BR)CEO

50

Ð

Vdc

(IC = 1.0 mAdc, IB = 0)

 

 

 

 

Collector± Base Breakdown Voltage

V(BR)CBO

50

Ð

Vdc

(IC = 0.1 mAdc, IE = 0)

 

 

 

 

Collector Cutoff Current

ICBO

Ð

50

nAdc

(VCB = 35 Vdc, IE = 0)

 

 

 

 

Emitter Cutoff Current

IEBO

Ð

50

nAdc

(VEB = 3.0 Vdc, IC = 0)

 

 

 

 

Motorola, Inc. 1996

2N5209

2N5210

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

 

hFE

 

 

Ð

(IC = 100 μAdc, VCE = 5.0 Vdc)

2N5209

 

100

300

 

 

 

2N5210

 

200

600

 

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

2N5209

 

150

Ð

 

 

 

2N5210

 

250

Ð

 

(IC = 10 mAdc, VCE = 5.0 Vdc)(1)

2N5209

 

150

Ð

 

 

 

2N5210

 

250

Ð

 

 

 

 

 

 

 

Collector± Emitter Saturation Voltage

 

VCE(sat)

Ð

0.7

Vdc

(IC = 10 mAdc, IB = 1.0 mAdc)

 

 

 

 

 

Base ± Emitter On Voltage

 

VBE(on)

Ð

0.85

Vdc

(IC = 1.0 mAdc, VCE = 5.0 mAdc)

 

 

 

 

 

SMALL± SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Current± Gain Ð Bandwidth Product

 

fT

30

Ð

MHz

(IC = 500 μAdc, VCE = 5.0 Vdc, f = 20 MHz)

 

 

 

 

 

Collector±Base Capacitance

 

Ccb

Ð

4.0

pF

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

 

 

 

 

 

Small±Signal Current Gain

 

hfe

 

 

Ð

(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)

2N5209

 

150

600

 

 

 

2N5210

 

250

900

 

 

 

 

 

 

 

Noise Figure

 

NF

 

 

dB

(IC = 20 μAdc, VCE = 5.0 Vdc, RS = 22 kΩ,

2N5209

 

Ð

3.0

 

f = 1.0 kHz)

2N5210

 

Ð

2.0

 

(IC = 20 μAdc, VCE = 5.0 Vdc, RS = 10 kΩ,

2N5209

 

Ð

4.0

 

f = 1.0 kHz)

2N5210

 

Ð

3.0

 

 

 

 

 

 

 

 

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

RS

in

en

IDEAL

TRANSISTOR

Figure 1. Transistor Noise Model

2

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5209 2N5210

NOISE CHARACTERISTICS

 

 

 

 

 

 

 

 

(VCE = 5.0 Vdc, TA = 25°C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOISE VOLTAGE

 

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BANDWIDTH = 1.0 Hz

 

 

 

 

BANDWIDTH = 1.0 Hz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

(nV)

 

 

IC = 10 mA

 

R 0

 

 

 

(nV)

 

 

R 0

 

 

 

 

 

 

 

 

 

 

 

 

S

 

 

 

 

 

S

 

 

 

 

 

 

 

VOLTAGE

10

 

3.0 mA

 

 

 

 

 

 

VOLTAGE

10

 

 

 

 

 

f = 10 Hz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100 Hz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, NOISE

7.0

1.0 mA

 

 

 

 

 

 

, NOISE

7.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10 kHz

 

1.0 kHz

n

 

 

 

 

 

 

 

 

 

n

 

 

 

 

 

 

 

 

e

5.0

 

 

 

 

 

 

 

 

e

5.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

300 μA

 

 

 

 

 

 

 

 

 

 

 

 

 

100 kHz

 

 

3.0

 

 

 

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

20

50

100 200

500

1 k 2 k

5 k

10 k 20 k

50 k 100 k

 

0.01

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

 

 

 

 

 

f, FREQUENCY (Hz)

 

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

Figure 2. Effects of Frequency

Figure 3. Effects of Collector Current

 

10

 

 

 

 

 

 

BANDWIDTH = 1.0 Hz

 

7.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

IC = 10 mA

 

(pA)

3.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

2.0

 

 

 

 

 

 

3.0 mA

 

1.0

 

 

 

 

 

 

1.0 mA

 

 

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

 

 

, NOISE

 

 

 

 

 

 

300 μA

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100 μA

 

n

0.3

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

10

μA

 

30 μA

 

 

 

RS 0

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

20

50

100

200

500

1 k 2 k

5 k 10 k 20 k

50 k 100 k

 

 

 

 

 

f, FREQUENCY (Hz)

 

Figure 4. Noise Current

 

20

 

 

 

 

 

 

 

(dB)

16

 

 

 

BANDWIDTH = 10 Hz to 15.7 kHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FIGURE

12

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = 1.0 mA

NOISE

 

 

 

 

 

 

8.0

 

 

 

 

 

500 μA

 

 

 

 

 

 

 

100 μA

 

NF,

 

 

 

 

 

 

 

 

 

 

 

 

 

10 μA

 

 

4.0

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

10

20

50

100 200

500 1 k

2 k

5 k 10 k 20 k

50 k 100 k

 

 

 

 

RS, SOURCE RESISTANCE (OHMS)

 

Figure 5. Wideband Noise Figure

100 Hz NOISE DATA

 

300

 

 

 

 

 

 

 

 

 

20

(nV)

200

BANDWIDTH = 1.0 Hz

 

IC = 10 mA

 

 

 

 

100

 

 

 

100 μA

 

 

 

 

16

TOTAL NOISE VOLTAGE

 

 

 

 

 

 

 

 

70

 

 

 

3.0 mA

 

 

 

 

 

 

50

 

 

 

1.0 mA

 

 

 

 

 

12

30

 

 

 

 

 

 

 

 

 

 

 

 

300 μA

 

 

 

 

 

 

20

 

 

 

 

 

 

30

μ

8.0

 

 

 

 

 

 

 

 

A

10

 

 

 

 

 

10 μA

 

 

FIGURENOISENF,(dB)

,

 

 

 

 

 

 

 

 

4.0

T

7.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

 

0

 

10

20

50

100 200

500 1 k

2 k

5 k 10 k

20 k

50 k 100 k

 

 

 

 

 

RS, SOURCE RESISTANCE (OHMS)

 

 

 

 

 

 

 

 

IC = 10 mA

 

3.0 mA

 

 

 

 

 

 

 

 

 

1.0 mA

 

 

 

 

 

 

 

 

 

300 μA

 

 

 

 

 

 

 

 

100 μA

 

 

 

 

 

 

 

30 μA

10 μA

 

 

 

 

 

 

 

 

 

 

BANDWIDTH = 1.0 Hz

 

 

 

 

 

 

10

20

50

100 200

500 1 k

2 k

5 k

10 k

20 k

50 k 100 k

 

 

 

RS, SOURCE RESISTANCE (OHMS)

 

 

Figure 6. Total Noise Voltage

Figure 7. Noise Figure

Motorola Small±Signal Transistors, FETs and Diodes Device Data

3

2N5209

2N5210

 

 

 

 

 

 

 

 

 

 

 

 

4.0

 

 

 

 

 

 

 

 

 

 

 

 

(NORMALIZED)

3.0

VCE = 5.0 V

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TA = 125°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

25°C

 

 

 

 

 

 

 

GAIN

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

± 55°C

 

 

 

 

 

 

 

CURRENT

0.7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

 

 

 

, DC

 

 

 

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

 

 

 

 

 

 

 

FE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

0.2

0.3

0.5

 

 

 

 

 

 

0.01

0.02

0.03

0.05

0.1

1.0

2.0

3.0

5.0

10

 

 

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

 

 

Figure 8. DC Current Gain

 

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

 

 

 

0.8

 

 

 

 

 

 

 

 

 

 

 

 

(VOLTS)

0.6

VBE @ VCE = 5.0 V

 

 

 

 

 

 

 

 

V, VOLTAGE

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

0

VCE(sat) @ IC/IB = 10

 

 

 

 

 

 

 

 

 

0.01 0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

Figure 9. ªOnº Voltages

 

 

± 0.4

 

 

 

 

 

 

 

 

 

 

 

 

°C)

 

 

 

 

 

 

 

 

 

 

 

 

BASE±EMITTER

COEFFICIENT (mV/

± 0.8

 

 

 

 

 

 

 

 

 

 

 

± 1.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,

TEMPERATURE

± 1.6

 

 

 

 

 

 

TJ = 25°C to 125°C

 

 

RθVBE

 

 

 

 

 

 

 

 

± 2.0

 

 

 

 

 

 

 

 

± 55°C to 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

± 2.4

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

 

 

0.01 0.02

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

Figure 10. Temperature Coefficients

 

8.0

 

 

 

 

 

 

 

 

 

(MHz)

500

 

 

 

 

 

 

 

 

 

 

 

 

 

6.0

 

 

 

 

 

 

TJ = 25°C

 

 

, CURRENT±GAIN Ð BANDWIDTH PRODUCT

 

 

 

 

 

 

 

 

 

 

 

300

C, CAPACITANCE (pF)

 

 

Cob

 

 

Cib

 

 

 

 

4.0

 

 

Ceb

 

 

 

 

 

3.0

 

Ccb

 

 

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

1.0

 

 

 

 

 

 

 

 

 

70

 

 

 

 

 

 

 

 

 

 

0.8

 

 

 

 

 

 

 

 

 

50

 

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

100

T

 

 

f

 

 

 

 

 

 

 

VR, REVERSE VOLTAGE (VOLTS)

 

 

 

 

 

VCE = 5.0 V

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

1.0

2.0

3.0

5.0

7.0 10

20

30

50

70

100

IC, COLLECTOR CURRENT (mA)

Figure 11. Capacitance

Figure 12. Current±Gain Ð Bandwidth Product

4

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5209 2N5210

PACKAGE DIMENSIONS

A

B

 

R

 

 

P

 

L

SEATING

F

PLANE

K

 

D

X X

J

 

G

H

SECTION X±X

V

C

1

N

 

N

CASE 029±04 (TO±226AA)

ISSUE AD

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.175

0.205

4.45

5.20

B

0.170

0.210

4.32

5.33

C

0.125

0.165

3.18

4.19

D

0.016

0.022

0.41

0.55

F

0.016

0.019

0.41

0.48

G

0.045

0.055

1.15

1.39

H

0.095

0.105

2.42

2.66

J

0.015

0.020

0.39

0.50

K

0.500

±±±

12.70

±±±

L

0.250

±±±

6.35

±±±

N

0.080

0.105

2.04

2.66

P

±±±

0.100

±±±

2.54

R

0.115

±±±

2.93

±±±

V

0.135

±±±

3.43

±±±

STYLE 1:

PIN 1. EMITTER

2.BASE

3.COLLECTOR

Motorola Small±Signal Transistors, FETs and Diodes Device Data

5

2N5209 2N5210

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA/EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

2N5209/D

*2N5209/D*

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