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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N4125/D

Amplifier Transistors

PNP Silicon

 

 

 

 

COLLECTOR

 

 

 

 

 

3

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BASE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

EMITTER

MAXIMUM RATINGS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rating

Symbol

2N4125

2N4126

 

Unit

 

 

 

 

 

 

 

 

 

Collector± Emitter Voltage

VCEO

30

25

 

Vdc

Collector± Base Voltage

VCBO

30

25

 

Vdc

Emitter± Base Voltage

VEBO

4.0

 

 

Vdc

Collector Current Ð Continuous

IC

200

 

 

mAdc

Total Device Dissipation @ TA = 25°C

PD

625

 

 

mW

Derate above 25°C

 

5.0

 

 

mW/°C

 

 

 

 

 

 

 

 

Total Device Dissipation @ TC = 25°C

PD

1.5

 

 

Watts

Derate above 25°C

 

12

 

 

mW/°C

 

 

 

 

 

 

 

 

Operating and Storage Junction

TJ, Tstg

± 55 to +150

 

°C

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

Max

 

Unit

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to Ambient

RqJA

200

 

 

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

 

 

°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

2N4125

2N4126

1

2 3

CASE 29±04, STYLE 1 TO±92 (TO±226AA)

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage(1)

 

V(BR)CEO

30

Ð

Vdc

(IC = 1.0 mAdc, IB = 0)

2N4125

 

 

 

2N4126

 

25

Ð

 

 

 

 

 

 

 

Collector± Base Breakdown Voltage

 

V(BR)CBO

30

Ð

Vdc

(IC = 10 mAdc, IE = 0)

2N4125

 

 

 

2N4126

 

25

Ð

 

 

 

 

 

 

 

Emitter± Base Breakdown Voltage

 

V(BR)EBO

4.0

Ð

Vdc

(IE = 10 mAdc, IC = 0)

 

 

 

 

 

Collector Cutoff Current

 

ICBO

Ð

50

nAdc

(VCB = 20 Vdc, IE = 0)

 

 

 

 

 

Emitter Cutoff Current

 

IEBO

Ð

50

nAdc

(VEB = 3.0 Vdc, IC = 0)

 

 

 

 

 

1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%.

 

 

 

 

 

REV 1

Motorola, Inc. 1996

2N4125

2N4126

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

 

 

 

 

 

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

ON CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain(1)

 

hFE

50

150

Ð

(IC = 2.0 mAdc, VCE = 1.0 Vdc)

2N4125

 

 

 

 

2N4126

 

120

360

 

(IC = 50 mAdc, VCE = 1.0 Vdc)

2N4125

 

25

Ð

 

 

 

2N4126

 

60

Ð

 

 

 

 

 

 

 

Collector± Emitter Saturation Voltage(1)

 

VCE(sat)

Ð

0.4

Vdc

(IC = 50 mAdc, IB = 5.0 mAdc)

 

 

 

 

 

Base ± Emitter Saturation Voltage(1)

 

VBE(sat)

Ð

0.95

Vdc

(IC = 50 mAdc, IB = 5.0 mAdc)

 

 

 

 

 

SMALL± SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Current± Gain Ð Bandwidth Product

 

fT

200

Ð

MHz

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

2N4125

 

 

 

 

2N4126

 

250

Ð

 

 

 

 

 

 

 

Input Capacitance

 

Cibo

Ð

10

pF

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

 

 

 

 

 

Collector±Base Capacitance

 

Ccb

Ð

4.5

pF

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)

 

 

 

 

 

Small±Signal Current Gain

 

hfe

50

200

Ð

(IC = 2.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

2N4125

 

 

 

 

2N4126

 

120

480

 

 

 

 

 

 

 

Current Gain Ð High Frequency

 

|hfe|

2.0

Ð

Ð

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

2N4125

 

 

 

 

2N4126

 

2.5

Ð

 

 

 

 

 

 

 

Noise Figure

 

NF

 

 

dB

(IC = 100 μAdc, VCE = 5.0 Vdc, RS = 1.0 k ohm,

2N4125

 

Ð

5.0

 

f = 1.0 kHz)

2N4126

 

Ð

4.0

 

 

 

 

 

 

 

 

1. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2.0%.

 

10

 

 

 

 

 

 

 

 

 

 

 

 

7.0

 

 

 

 

 

 

 

 

 

 

 

(pF)

5.0

 

 

 

Cobo

 

 

 

 

 

 

CAPACITANCE

3.0

 

 

 

 

Cibo

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

30

50

 

0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

10

20

 

 

 

 

 

REVERSE BIAS (VOLTS)

 

 

 

 

Figure 1. Capacitance

 

200

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

ts

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

70

 

 

td

 

 

 

 

 

 

(ns)

50

 

tr

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TIME

30

 

tf

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10.0

VCC = 3.0 V

 

 

 

 

 

 

 

7.0

IC/IB = 10

 

 

 

 

 

 

 

 

VBE(off) = 0.5 V

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

 

1.0

2.0

3.0

5.0

10

20

30

50

100

200

IC, COLLECTOR CURRENT (mA)

Figure 2. Switching Times

2

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N4125 2N4126

AUDIO SMALL±SIGNAL CHARACTERISTICS

NOISE FIGURE

 

 

 

 

 

 

 

 

 

VCE = ±5.0 Vdc, TA = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Bandwidth = 1.0 Hz

 

 

 

 

 

 

 

 

 

 

 

5.0

SOURCE RESISTANCE = 200 W

 

 

 

 

 

12

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 1 kHz

 

IC = 1 mA

 

 

 

 

 

 

4.0

IC = ±1 mA

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

(dB)

 

 

SOURCE RESISTANCE = 200 W

 

 

 

(dB)

 

 

 

 

IC = 0.5 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = ± 0.5 mA

 

 

 

 

 

8.0

 

 

 

 

 

 

 

 

 

 

FIGURE

3.0

 

 

 

 

 

 

 

FIGURE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SOURCE RESISTANCE = 2 kΩ

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = ± 50 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

NOISE

 

 

 

 

 

 

 

 

NOISE

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4.0

 

 

 

 

 

 

 

IC = 50 mA

NF,

 

 

 

 

 

 

 

 

 

 

NF,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1.0

SOURCE RESISTANCE = 2 kΩ

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

IC = 100

m

A

 

 

IC = ±100 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

40

100

 

0

 

 

 

 

 

 

 

40

 

100

 

0.1

0.2

0.4

1.0

2.0

4.0

10

20

 

0.1

0.2

0.4

1.0

2.0

4.0

10

20

 

 

 

 

 

f, FREQUENCY (kHz)

 

 

 

 

 

 

 

RS, SOURCE RESISTANCE (kΩ)

 

 

 

 

Figure 3. Frequency Variations

Figure 4. Source Resistance

hfe, CURRENT GAIN

 

 

 

 

 

 

h PARAMETERS

 

 

 

 

 

 

 

 

 

 

 

VCE = 10 V, f = 1 kHz, TA = 25°C

 

 

 

 

 

300

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

 

mmhos)

70

 

 

 

 

 

 

200

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

 

(

 

 

 

 

 

 

 

 

 

 

 

 

 

ADMITTANCE

30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

OUTPUT,

20

 

 

 

 

 

 

50

 

 

 

 

 

10

 

 

 

 

 

 

70

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

oe

 

 

 

 

 

 

 

 

 

 

 

 

 

h

7.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

30

 

 

 

 

5.0

10

5.0

 

 

 

 

5.0

10

0.1

0.2

0.5

1.0

2.0

0.1

0.2

0.5

1.0

2.0

IC, COLLECTOR CURRENT (mA)

IC, COLLECTOR CURRENT (mA)

Figure 5. Current Gain

Figure 6. Output Admittance

 

20

 

 

 

 

 

 

 

10

 

 

 

 

 

 

(kΩ)

5.0

 

 

 

 

 

 

IMPEDANCE

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

, INPUT

1.0

 

 

 

 

 

 

0.5

 

 

 

 

 

 

ie

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

0.2

0.2

0.5

1.0

2.0

5.0

10

 

0.1

IC, COLLECTOR CURRENT (mA)

Figure 7. Input Impedance

 

10

 

 

 

 

 

 

±4 )

7.0

 

 

 

 

 

 

(X 10

5.0

 

 

 

 

 

 

RATIO

3.0

 

 

 

 

 

 

FEEDBACK

2.0

 

 

 

 

 

 

 

 

 

 

 

 

 

VOLTAGE

1.0

 

 

 

 

 

 

0.7

 

 

 

 

 

 

,

 

 

 

 

 

 

 

re

0.5

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

 

5.0

10

 

0.1

0.2

0.5

1.0

2.0

IC, COLLECTOR CURRENT (mA)

Figure 8. Voltage Feedback Ratio

Motorola Small±Signal Transistors, FETs and Diodes Device Data

3

2N4125 2N4126

STATIC CHARACTERISTICS

 

2.0

 

 

 

 

 

TJ = +125°C

 

 

 

 

 

 

 

 

 

 

(NORMALIZED)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

= 1 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE

 

1.0

 

 

 

 

 

+25°C

 

 

 

 

 

 

 

 

 

 

0.7

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

± 55°C

 

 

 

 

 

 

 

 

 

 

GAIN

0.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

0.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, DC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

200

 

0.1

 

 

 

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

 

 

 

Figure 9. DC Current Gain

(VOLTS)

1.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

VOLTAGE

0.8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC = 1 mA

 

 

 

 

10 mA

 

 

30 mA

 

 

 

 

100 mA

 

0.6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

EMITTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, COLLECTOR

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.02

0.03

0.05

0.07

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

 

0.01

IB, BASE CURRENT (mA)

Figure 10. Collector Saturation Region

 

1.0

 

 

 

 

VBE(sat) @ IC/IB = 10

 

(mV/°C)

1.0

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.8

 

 

 

 

 

 

 

COEFFICIENTSTEMPERATURE

0.5

qVC for VCE(sat)

 

+25°C to +125°C

 

 

 

(VOLTS)VOLTAGEV,

 

 

 

 

VBE @ VCE = 1 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

± 55°C to +25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

0.6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

±0.5

 

 

 

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

+25°C to +125°C

 

 

 

 

 

 

 

 

 

 

 

±1.0

qVS for VBE(sat)

 

 

 

 

± 55°C to +25°C

 

 

0.2

 

 

 

VCE(sat) @ IC/IB = 10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

±1.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

θ

±2.0

 

 

 

 

 

 

 

 

 

 

 

2.0

5.0

10

20

50

100

200

 

20

40

60

80

100

120

140

160

180

200

 

1.0

 

0

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

Figure 11. ªOnº Voltages

Figure 12. Temperature Coefficients

4

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N4125 2N4126

PACKAGE DIMENSIONS

A

B

 

R

 

 

P

 

L

SEATING

F

PLANE

K

 

D

X X

J

 

G

H

SECTION X±X

V

C

1

N

 

N

CASE 029±04 (TO±226AA)

ISSUE AD

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.175

0.205

4.45

5.20

B

0.170

0.210

4.32

5.33

C

0.125

0.165

3.18

4.19

D

0.016

0.022

0.41

0.55

F

0.016

0.019

0.41

0.48

G

0.045

0.055

1.15

1.39

H

0.095

0.105

2.42

2.66

J

0.015

0.020

0.39

0.50

K

0.500

±±±

12.70

±±±

L

0.250

±±±

6.35

±±±

N

0.080

0.105

2.04

2.66

P

±±±

0.100

±±±

2.54

R

0.115

±±±

2.93

±±±

V

0.135

±±±

3.43

±±±

STYLE 1:

PIN 1. EMITTER

2.BASE

3.COLLECTOR

Motorola Small±Signal Transistors, FETs and Diodes Device Data

5

2N4125 2N4126

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA/EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

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