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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N5555/D

JFET Switching
N±Channel Ð Depletion					1 DRAIN	2N5555
					1 DRAIN
		3




		GATE



				2 SOURCE
MAXIMUM RATINGS

Rating	Symbol	Value	Unit

Drain± Source Voltage	VDS	25	Vdc
Drain± Gate Voltage	VDG	25	Vdc			1
Drain± Gate Voltage	VDG	25	Vdc			2 3
Gate± Source Voltage	VGS	25	Vdc			2 3
Gate± Source Voltage	VGS	25	Vdc
Forward Gate Current	IGF	10	mAdc			CASE 29±04, STYLE 5
Total Device Dissipation @ TC = 25°C	PD	350	mW			TO±92 (TO±226AA)
Total Device Dissipation @ TC = 25°C	PD	350	mW
Derate above 25°C		2.8	mW/°C

Junction Temperature Range	TJ	± 65 to +150		°C
Storage Temperature Range	Tstg	± 65 to +150		°C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Max	Unit

OFF CHARACTERISTICS

Gate± Source Breakdown Voltage (IG = 10 μAdc, VDS = 0)	V(BR)GSS	25	Ð	Vdc
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)	IGSS	Ð	1.0	nAdc
Drain Cutoff Current (VDS = 12 Vdc, VGS = ± 10 V)	ID(off)	Ð	10	nAdc
(VDS = 12 Vdc, VGS = ± 10 V, TA = 100°C)		Ð	2.0	μAdc

ON CHARACTERISTICS

Zero± Gate±Voltage Drain Current(1)		IDSS	15	Ð	mAdc
(VDS = 15 Vdc, VGS = 0)
Gate±Source Forward Voltage		VGS(f)	Ð	1.0	Vdc
(IG(f) = 1.0 mAdc, VDS = 0)
Drain±Source On±Voltage		VDS(on)	Ð	1.5	Vdc
(ID = 7.0 mAdc, VGS = 0)
Static Drain±Source On Resistance		rDS(on)	Ð	150	Ohms
(ID = 0.1 mAdc, VGS = 0)
SMALL± SIGNAL CHARACTERISTICS

Small±Signal Drain±Source ªONº Resistance		rds(on)	Ð	150	Ohms
(VGS = 0, ID = 0, f = 1.0 kHz)
Input Capacitance		Ciss	Ð	5.0	pF
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Reverse Transfer Capacitance		Crss	Ð	1.2	pF
(VDS = 0, VGS = 10 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS

Turn±On Delay Time	(VDD = 10 Vdc, ID(on) = 7.0 mAdc,	td(on)	Ð	5.0	ns
	VGS(on) = 0, VGS(off) = ±10 Vdc) (See Figure 1)
Rise Time	VGS(on) = 0, VGS(off) = ±10 Vdc) (See Figure 1)	tr	Ð	5.0	ns
Rise Time		tr	Ð	5.0	ns
Turn±Off Delay Time	(VDD = 10 Vdc, ID(on) = 7.0 mAdc,	td(off)	Ð	15	ns
	VGS(on) = 0, VGS(off) = ±10 Vdc) (See Figure 1)
Fall Time	VGS(on) = 0, VGS(off) = ±10 Vdc) (See Figure 1)	tf	Ð	10	ns
Fall Time		tf	Ð	10	ns

1. Pulse Test: Pulse Width < 300 μs, Duty Cycle < 3.0%.

Motorola Small±Signal Transistors, FETs and Diodes Device Data	1
Motorola, Inc. 1997

2N5555

						PULSE WIDTH
			VDD			90%	90%	VGS(on)
			VDD	TEKTRONIX		90%	90%
			50 OHM	TEKTRONIX		50%		50%
		1.0 k	COAXIAL	567	INPUT	10%		10%
		1.0 k	CABLE	SAMPLING	INPUT			VGS(off)
			CABLE	SAMPLING
			10 k	SCOPE		INPUT PULSE		INPUT PULSE
PULSE	50 OHM COAXIAL CABLE					INPUT PULSE		INPUT PULSE
PULSE	50 OHM COAXIAL CABLE					RISE TIME		FALL TIME
GENERATOR						RISE TIME		FALL TIME
GENERATOR
(50 OHMS)	1.0 k	50		Rin =
				50 OHMS
						td(on)	td(off)
					OUTPUT	10%		10%
INPUT PULSE						10%		10%
INPUT PULSE
RISE TIME < 1.0 ns						90%		90%
FALL TIME < 1.0 ns						90%		90%
FALL TIME < 1.0 ns
NOMINAL VALUE OF ªONº PULSE WIDTH = 400 ns						tr		tf
DUTY CYCLE ≤ 1.0%						tr		tf
DUTY CYCLE ≤ 1.0%

GENERATOR SOURCE IMPEDANCE = 50 OHMS

Figure 1. Switching Times Test Circuit

POWER GAIN

	24
	20		f = 100 MHz
	20
(dB)
GAIN	16
GAIN
, POWER	12			400 MHz
, POWER
G
P						Tchannel = 25°C
	8.0					Tchannel = 25°C
						VDS = 15 Vdc
	4.0					VGS = 0 V
	4.0	2.0
	0	2.0	4.0	6.0	8.0	10	12	14
			ID, DRAIN CURRENT (mA)

Figure 2. Effects of Drain Current

	NEUTRALIZING		C2			C3
	COIL	L1	C2			C3
INPUT	C1			C4		TO 500 W
INPUT				C4	L2	TO 500 W
TO 50 W		C5			L2	LOAD
						LOAD
				CASE
	Rg′	L3
SOURCE
SOURCE
		C6			C7
				COMMON		ID = 5.0 mA
			VGS	VDS		ID = 5.0 mA
				+15 V

Adjust VGS for	NOTE: The noise source is a hot±cold body
ID = 50 mA	(AIL type 70 or equivalent) with a
VGS < 0 Volts	test receiver (AIL type 136 or equivalent).

*L1	17 turns, (approx. Ð depends upon circuit layout) AWG #28	**L1
	enameled copper wire, close wound on 9/32″ ceramic coil
	form. Tuning provided by a powdered iron slug.
L2	4±1/2 turns, AWG #18 enameled copper wire, 5/16″ long,	L2
	3/8″ I.D. (AIR CORE).
L3	3±1/2 turns, AWG #18 enameled copper wire, 1/4″ long,	L3
	3/8″ I.D. (AIR CORE).

Reference	VALUE
Designation	100 MHz	400 MHz
	100 MHz	400 MHz

C1	7.0 pF	1.8 pF

C2	1000 pF	17 pF

C3	3.0 pF	1.0 pF

C4	1±12 pF	0.8±8.0 pF

C5	1±12 pF	0.8±8.0 pF

C6	0.0015 mF	0.001 mF

C7	0.0015 mF	0.001 mF

L1	3.0 mH*	0.2 mH**

L2	0.15 mH*	0.03 mH**

L3	0.14 mH*	0.022 mH**

6 turns, (approx. Ð depends upon circuit layout) AWG #24 enameled copper wire, close wound on 7/32″ ceramic coil form. Tuning provided by an aluminum slug.

1 turn, AWG #16 enameled copper wire, 3/8″ I.D. (AIR CORE).

1/2 turn, AWG #16 enameled copper wire, 1/4″ I.D. (AIR CORE).

Figure 3. 100 MHz and 400 MHz Neutralized Test Circuit

2	Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5555

NOISE FIGURE

(Tchannel = 25°C)

	10
									ID = 5.0 mA
	8.0
(dB)
FIGURE	6.0			f = 400 MHz
				f = 400 MHz

NF, NOISE	4.0
NF, NOISE	2.0
	2.0	100 MHz
		100 MHz
	0
	0	2.0	4.0	6.0	8.0	10	12	14	16	18	20
			VDS, DRAIN±SOURCE VOLTAGE (VOLTS)

	6.5
	5.5					VDS = 15 V
	5.5					VGS = 0 V
(dB)						VGS = 0 V
(dB)
FIGURE	4.5			f = 400 MHz
				f = 400 MHz

NF, NOISE	3.5
NF, NOISE	2.5
	2.5		100 MHz
			100 MHz
	1.5
	0	2.0	4.0	6.0	8.0	10	12	14
			ID, DRAIN CURRENT (mA)

Figure 4. Effects of Drain±Source Voltage

Figure 5. Effects of Drain Current

INTERMODULATION CHARACTERISTICS

	+ 40
(dB)	+ 20					3RD ORDER INTERCEPT
(dB)		VDS = 15 Vdc
TONE	0	VDS = 15 Vdc
	± 20	f1 = 399 MHz
		f2 = 400 MHz
PER		f2 = 400 MHz
PER	± 40
POWER	± 40
	± 60
	± 80
, OUTPUT	± 80
	± 100						3RD ORDER IMD
	± 120	FUNDAMENTAL					OUTPUT @ IDSS,
out		OUTPUT @ I		DSS	,		0.25 IDSS
P	± 140	0.25 IDSS		DSS
	± 140
	± 160
	± 160	± 100	± 80		± 60	± 40	± 20	0	+ 20
	± 120	± 100	± 80		± 60	± 40	± 20	0	+ 20

Pin, INPUT POWER PER TONE (dB)

Figure 6. Third Order Intermodulation Distortion

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5555

COMMON SOURCE CHARACTERISTICS

ADMITTANCE PARAMETERS

									(VDS = 15 Vdc, Tchannel = 25°C)
		30									TRANSADMITTANCE (mmhos)		5.0
(mmhos)	(mmhos)	20										REVERSE, SUSCEPTANCE (mmhos)	3.0
													3.0
		10						bis @ IDSS					2.0
		10						bis @ IDSS											brs @ IDSS
INPUTCONDUCTANCE	INPUT, SUSCEPTANCE	7.0											1.0						brs @ IDSS
		7.0
		5.0
		5.0											0.7
													0.7							0.25 IDSS
		3.0							gis @ IDSS				0.5							0.25 IDSS
		3.0							gis @ IDSS				0.5
		2.0						gis @ 0.25 IDSS					0.3
								gis @ 0.25 IDSS					0.2
		1.0											0.2
		1.0
,	is	0.7
is	is	0.7
g	b	0.5									REVERSE,	rs	0.1						grs @ IDSS, 0.25 IDSS
		0.5			bis @ 0.25 IDSS						rs	b	0.07						grs @ IDSS, 0.25 IDSS
					bis @ 0.25 IDSS						g	b	0.07
		0.3											0.05
		10	20	30	50	70	100	200	300	500 700	1000		10	20	30	50	70	100	200	300	500 700	1000
					f, FREQUENCY (MHz)											f, FREQUENCY (MHz)

Figure 7. Input Admittance (yis)

Figure 8. Reverse Transfer Admittance (yrs)

TRANSCONDUCTANCE(mmhos)	\|, FORWARD SUSCEPTANCE (mmhos)	20
		10
		7.0						gfs @ IDSS
		5.0
		3.0					gfs @ 0.25 IDSS
		2.0
		1.0			\|bfs\| @ IDSS
		0.7
		0.5						\|bfs\| @ 0.25 IDSS
								\|bfs\| @ 0.25 IDSS
FORWARD,	fs
FORWARD,	\|b	0.3
fs
g		0.2
		0.2
		10	20	30	50	70	100	200	300	500	700	1000
					f, FREQUENCY (MHz)

		10
,OUTPUT ADMITTANCE (mhos)	OUTPUTSUSCEPTANCE (mhos)	5.0
		2.0			bos @ IDSS and 0.25 IDSS
		1.0
		0.5
		0.2						gos @ IDSS
		0.1
		0.05
os	,	0.05
os	os
g	b	0.02							gos @ 0.25 IDSS
									gos @ 0.25 IDSS

		0.01
		10	20	30	50	70	100	200	300	500 700	1000
					f, FREQUENCY (MHz)

Figure 9. Forward Transadmittance (yfs)

Figure 10. Output Admittance (yos)

4	Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5555

COMMON SOURCE CHARACTERISTICS

S±PARAMETERS

(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)

	30°		20°	10°	0°	350°	340°		330°
40°					1.0	100	ID = 0.25 IDSS			320°
40°					1.0					320°
						100		200
					0.9		200	300
50°					0.9				400	310°
50°									400	310°
							300		500
					0.8	ID = IDSS			500
60°					0.8	ID = IDSS		400		300°
60°								400		300°
									600
70°					0.7			500		290°
							600		700
80°							600			280°
80°					0.6		700		800	280°
									800

°						800		900		°
90						900				270
						900
100°										260°
110°										250°
120°										240°
130°										230°
140°										220°
	150°		160°	170°	180°	190°	200°		210°
				Figure 11. S11s
	30°		20°	10°	0°	350°	340°		330°
40°										320°
					0.6
50°										310°
					0.5
60°										300°
70°		900			0.4					290°
70°	800									290°
	800		900
80°			900							280°
80°	700	800			0.3					280°
	700	800

90°	600	700	ID = 0.25 IDSS							270°
90°	600	600								270°
		600	500		0.3
100°	500		500		0.3					260°
100°	500				100					260°
			400		100
	400		400
110°	400		300	200	0.4					250°
110°			300							250°

120°		300								240°
120°	ID = IDSS		200							240°
	ID = IDSS		200	100	0.5
				100
130°										230°
					0.6
140°										220°
	150°		160°	170°	180°	190°	200°		210°
				Figure 13. S21s

30°	20°	10°	0°	350°	340°	330°
40°			0.4			320°
50° ID = IDSS, 0.25 IDSS			0.3			310°
50° ID = IDSS, 0.25 IDSS						310°
		900
60°	800		0.2			300°
60°	600	700				300°
		700

70°	500		0.1			290°
	400
80°	300		0.0			280°
	200		0.0
90°	200					270°
90°		100				270°
		100
100°						260°
110°						250°
120°						240°
130°						230°
140°						220°
150°	160°	170°	180°	190°	200°	210°
		Figure 12. S12s

30°	20°	10°	0°	350°			340°	330°
40°			100	200	300		ID = 0.25 IDSS		320°
40°			1.0		300		400		320°
			100 200				400
			100 200				500
				300			600
					400		600
			0.9		400			700
			0.9		500			700
50°			ID = IDSS			600		800	310°
			ID = IDSS				700	900
							800 900	900
60°			0.8				800 900		300°
60°									300°
70°			0.7						290°
80°			0.6						280°
			0.6
90°									270°
100°									260°
110°									250°
120°									240°
130°									230°
140°									220°
150°	160°	170°	180°	190°			200°	210°
		Figure 14. S22s

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5555

COMMON GATE CHARACTERISTICS

ADMITTANCE PARAMETERS

									(VDG = 15 Vdc, Tchannel = 25°C)
		20									TRANSADMITTANCE (mmhos)		0.5
(mmhos)	(mmhos)	10										REVERSE, SUSCEPTANCE (mmhos)	0.3
		10											0.2							brg @ IDSS
		7.0					gig @ IDSS						0.2							brg @ IDSS
		7.0					gig @ IDSS
, INPUT CONDUCTANCE	, INPUT SUSCEPTANCE	5.0											0.1
													0.1
		3.0			grg @ 0.25 IDSS								0.07
		2.0											0.05
		1.0											0.03								0.25 IDSS
		1.0											0.02
		0.7											0.02
		0.5	big @ IDSS
ig	ig
g	b				big @ 0.25 IDSS						REVERSE,	rg	0.01					g	@ I	DSS	, 0.25 I	DSS
		0.3									rg b		0.007					ig		DSS		DSS
											g		0.007
		0.2	20	30	50	70	100	200	300	500 700	1000		0.005	20	30	50	70	100	200		300	500 700	1000
		10	20	30	50	70	100	200	300	500 700	1000		10	20	30	50	70	100	200		300	500 700	1000
					f, FREQUENCY (MHz)											f, FREQUENCY (MHz)

Figure 15. Input Admittance (yig)

Figure 16. Reverse Transfer Admittance (yrg)

TRANSCONDUCTANCE(mmhos)	FORWARD SUSCEPTANCE (mmhos)	10						gfg @ IDSS
		7.0						gfg @ IDSS
		5.0
		3.0						gfg @ 0.25 IDSS
		2.0
		1.0
		0.7
		0.5
		0.3			bfg @ IDSS
		0.3

FORWARD	,	0.2						brg @ 0.25 IDSS
	fg	0.2						brg @ 0.25 IDSS
	b
,
fg		0.1
g		0.1
		10	20	30	50	70	100	200	300	500	700	1000
					f, FREQUENCY (MHz)

	OUTPUT SUSCEPTANCE (mmhos)	1.0
, OUTPUT ADMITTANCE (mmhos)		0.7	bog @ IDSS, 0.25 IDSS
		0.5
		0.3
		0.2
		0.1
		0.07				gog @ IDSS
		0.05				gog @ IDSS
		0.03
og	,
og	og	0.02
g	b	0.02		gog @ 0.25 IDSS
		0.01		gog @ 0.25 IDSS
		0.01
		10	20	30	50	70	100	200	300	500 700	1000
					f, FREQUENCY (MHz)

Figure 17. Forward Transfer Admittance (yfg)

Figure 18. Output Admittance (yog)

6	Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5555

COMMON GATE CHARACTERISTICS

S±PARAMETERS

(VDS = 15 Vdc, Tchannel = 25°C, Data Points in MHz)

30°	20°	10°	0°	350°		340°	330°
40°			0.7				320°
			100	200		ID = 0.25 IDSS
			100		300
			0.6		300
			0.6			400
50°			100	200		500	310°
			100	200			600
			0.5	300			600
				300
						400	700
60°						400	700
60°						500	300°
				ID = IDSS		500	800
			0.4	ID = IDSS		600	800
70°						600	290°
70°							290°
						700	900
80°						700	280°
80°			0.3			800	280°
			0.3			800
90°						900	270°
100°							260°
110°							250°
120°							240°
130°							230°
140°							220°
150°	160°	170°	180°	190°		200°	210°
		Figure 19. S11g

30°	20°	10°	0°	350°	340°	330°
°			0.5				°
40							320
				100
			0.4			ID = IDSS
°						ID = IDSS	°
50			100				310
			100
			0.3
60°							300°
70°			0.2	ID = 0.25 IDSS			290°
70°				ID = 0.25 IDSS			290°
80°			0.1				280°
			0.1			900
90°						900	270°
90°							270°
100°						900	260°
100°							260°
110°							250°
120°							240°
130°							230°
140°							220°
150°	160°	170°	180°	190°	200°	210°
		Figure 21. S21g

30°	20°	10°	0°	350°	340°	330°
40°			0.04			320°
			0.03
50°						310°
60°			0.02			300°
60°						300°
70°			0.01			290°
70°						290°
80°			0.0			280°
		100	0.0
90°		100				270°
90°		500				270°
	600	500
100°	600	600 ID = 0.25 IDSS				260°
100°		600 ID = 0.25 IDSS				260°
ID = IDSS
110°	700	700	0.01			250°
	700	800	0.01
		800
120°	800					240°
	800		0.02
			0.02
		900
130°	900					230°
	900		0.03
			0.03
140°			0.04			220°
150°	160°	170°	180°	190°	200°	210°
		Figure 20. S12g

30°	20°	10°	0°	350°		340°	330°
			1.5	300		500
40°			1.0			500	°
			1.0	200	400	700	320
			100	200	400	700
			100			600
						600
			0.9			800	900
			0.9
50°							310°
					ID = IDSS, 0.25 IDSS
60°			0.8				300°
60°							300°
70°			0.7				290°
70°							290°
80°			0.6				280°
			0.6
90°							270°
100°							260°
110°							250°
120°							240°
130°							230°
140°							220°
150°	160°	170°	180°	190°		200°	210°
		Figure 22. S22g

Motorola Small±Signal Transistors, FETs and Diodes Device Data

2N5555

PACKAGE DIMENSIONS

	A	B
		B
R
		P
		L
SEATING		F
PLANE		K

	X X	D
	X X	G
		G
	H	J
	V	C
	1	SECTION X±X
	1	N
		N

CASE 029±04 (TO±226AA)

ISSUE AD

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

	INCHES		MILLIMETERS
DIM	MIN	MAX	MIN	MAX
A	0.175	0.205	4.45	5.20
B	0.170	0.210	4.32	5.33
C	0.125	0.165	3.18	4.19
D	0.016	0.022	0.41	0.55
F	0.016	0.019	0.41	0.48
G	0.045	0.055	1.15	1.39
H	0.095	0.105	2.42	2.66
J	0.015	0.020	0.39	0.50
K	0.500	±±±	12.70	±±±
L	0.250	±±±	6.35	±±±
N	0.080	0.105	2.04	2.66
P	±±±	0.100	±±±	2.54
R	0.115	±±±	2.93	±±±
V	0.135	±±±	3.43	±±±

STYLE 5:

PIN 1. DRAIN

2.SOURCE

3.GATE

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

	Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, 6F Seibu±Butsuryu±Center,
P.O. Box 5405, Denver, Colorado 80217. 303±675±2140 or 1±800±441±2447	3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 81±3±3521±8315
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INTERNET: http://motorola.com/sps

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Motorola Small±Signal Transistors, FETs and Diodes Device2N5555/DData

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