MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N5088/D
Amplifier Transistors
NPN Silicon
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COLLECTOR |
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3 |
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2 |
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BASE |
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1 |
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EMITTER |
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MAXIMUM RATINGS |
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Rating |
Symbol |
2N508 |
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2N508 |
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Unit |
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8 |
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9 |
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Collector± Emitter Voltage |
VCEO |
30 |
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25 |
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Vdc |
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Collector± Base Voltage |
VCBO |
35 |
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30 |
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Vdc |
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Emitter± Base Voltage |
VEBO |
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3.0 |
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Vdc |
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Collector Current Ð Continuous |
IC |
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50 |
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mAdc |
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Total Device Dissipation @ TA = 25°C |
PD |
625 |
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mW |
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Derate above 25°C |
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5.0 |
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mW/°C |
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Total Device Dissipation @ TC = 25°C |
PD |
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1.5 |
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Watts |
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Derate above 25°C |
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12 |
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mW/°C |
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Operating and Storage Junction |
TJ, Tstg |
± 55 to +150 |
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°C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
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Unit |
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Thermal Resistance, Junction to Ambient |
RqJA(1) |
200 |
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°C/W |
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Thermal Resistance, Junction to Case |
RqJC |
83.3 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
2N5088
2N5089
1
2 3
CASE 29±04, STYLE 1 TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Max |
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OFF CHARACTERISTICS
Collector± Emitter Breakdown Voltage(2) |
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V(BR)CEO |
30 |
Ð |
Vdc |
(IC = 1.0 mAdc, IB = 0) |
2N5088 |
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2N5089 |
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25 |
Ð |
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Collector± Base Breakdown Voltage |
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V(BR)CBO |
35 |
Ð |
Vdc |
(IC = 100 mAdc, IE = 0) |
2N5088 |
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2N5089 |
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30 |
Ð |
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Collector Cutoff Current |
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ICBO |
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nAdc |
(VCB = 20 Vdc, IE = 0) |
2N5088 |
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Ð |
50 |
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(VCB = 15 Vdc, IE = 0) |
2N5089 |
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Ð |
50 |
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Emitter Cutoff Current |
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IEBO |
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nAdc |
(VEB(off) = 3.0 Vdc, IC = 0) |
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Ð |
50 |
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(VEB(off) = 4.5 Vdc, IC = 0) |
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Ð |
100 |
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1.RθJA is measured with the device soldered into a typical printed circuit board.
2.Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
Motorola, Inc. 1996
2N5088 |
2N5089 |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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ON CHARACTERISTICS |
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DC Current Gain |
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hFE |
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(IC = 100 μAdc, VCE = 5.0 Vdc) |
2N5088 |
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300 |
900 |
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2N5089 |
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400 |
1200 |
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(IC = 1.0 mAdc, VCE = 5.0 Vdc) |
2N5088 |
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350 |
Ð |
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2N5089 |
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450 |
Ð |
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(IC = 10 mAdc, VCE = 5.0 Vdc)(2) |
2N5088 |
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300 |
Ð |
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2N5089 |
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400 |
Ð |
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Collector± Emitter Saturation Voltage |
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VCE(sat) |
Ð |
0.5 |
Vdc |
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(IC = 10 mAdc, IB = 1.0 mAdc) |
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Base ± Emitter On Voltage |
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VBE(on) |
Ð |
0.8 |
Vdc |
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(IC = 10 mAdc, VCE = 5.0 Vdc)(2) |
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SMALL± SIGNAL CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product |
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fT |
50 |
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MHz |
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(IC = 500 μAdc, VCE = 5.0 Vdc, f = 20 MHz) |
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Collector±Base Capacitance |
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Ccb |
Ð |
4.0 |
pF |
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(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) |
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Emitter±Base Capacitance |
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Ceb |
Ð |
10 |
pF |
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(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) |
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Small±Signal Current Gain |
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hfe |
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(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) |
2N5088 |
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350 |
1400 |
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2N5089 |
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450 |
1800 |
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Noise Figure |
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NF |
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dB |
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(IC = 100 μAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, |
2N5088 |
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Ð |
3.0 |
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f = 1.0 kHz) |
2N5089 |
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Ð |
2.0 |
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2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
2N5088 2N5089
NOISE CHARACTERISTICS
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(VCE = 5.0 Vdc, TA = 25°C) |
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NOISE VOLTAGE |
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30 |
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30 |
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BANDWIDTH = 1.0 Hz |
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BANDWIDTH = 1.0 Hz |
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20 |
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20 |
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(nV) |
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IC = 10 mA |
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R ≈ 0 |
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(nV) |
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R ≈ 0 |
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S |
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S |
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VOLTAGE |
10 |
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3.0 mA |
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VOLTAGE |
10 |
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f = 10 Hz |
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100 Hz |
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, NOISE |
7.0 |
1.0 mA |
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, NOISE |
7.0 |
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10 kHz |
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1.0 kHz |
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n |
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n |
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e |
5.0 |
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e |
5.0 |
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300 μA |
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100 kHz |
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3.0 |
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3.0 |
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10 |
20 |
50 |
100 200 |
500 |
1 k 2 k |
5 k |
10 k 20 k |
50 k 100 k |
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0.01 |
0.02 |
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
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f, FREQUENCY (Hz) |
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IC, COLLECTOR CURRENT (mA) |
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Figure 2. Effects of Frequency |
Figure 3. Effects of Collector Current |
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10 |
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BANDWIDTH = 1.0 Hz |
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7.0 |
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5.0 |
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IC = 10 mA |
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(pA) |
3.0 |
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CURRENT |
2.0 |
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3.0 mA |
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1.0 |
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1.0 mA |
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0.7 |
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, NOISE |
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300 μA |
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0.5 |
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100 μA |
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n |
0.3 |
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I |
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0.2 |
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10 |
μA |
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30 μA |
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RS ≈ 0 |
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0.1 |
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10 |
20 |
50 |
100 |
200 |
500 |
1 k 2 k |
5 k 10 k 20 k |
50 k 100 k |
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f, FREQUENCY (Hz) |
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Figure 4. Noise Current
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(dB) |
16 |
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BANDWIDTH = 10 Hz to 15.7 kHz |
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FIGURE |
12 |
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IC = 1.0 mA |
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NOISE |
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8.0 |
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500 μA |
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100 μA |
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NF, |
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10 μA |
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4.0 |
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0 |
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10 |
20 |
50 |
100 200 |
500 1 k |
2 k |
5 k 10 k 20 k |
50 k 100 k |
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RS, SOURCE RESISTANCE (OHMS) |
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Figure 5. Wideband Noise Figure
100 Hz NOISE DATA
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300 |
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20 |
(nV) |
200 |
BANDWIDTH = 1.0 Hz |
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IC = 10 mA |
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100 |
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100 μA |
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16 |
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TOTAL NOISE VOLTAGE |
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70 |
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3.0 mA |
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50 |
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1.0 mA |
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12 |
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30 |
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300 μA |
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20 |
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30 |
μ |
8.0 |
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A |
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10 |
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10 μA |
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FIGURENOISENF,(dB) |
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, |
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4.0 |
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T |
7.0 |
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V |
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5.0 |
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3.0 |
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0 |
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10 |
20 |
50 |
100 200 |
500 1 k |
2 k |
5 k 10 k |
20 k |
50 k 100 k |
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RS, SOURCE RESISTANCE (OHMS) |
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IC = 10 mA |
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3.0 mA |
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1.0 mA |
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300 μA |
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100 μA |
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30 μA |
10 μA |
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BANDWIDTH = 1.0 Hz |
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10 |
20 |
50 |
100 200 |
500 1 k |
2 k |
5 k |
10 k |
20 k |
50 k 100 k |
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RS, SOURCE RESISTANCE (OHMS) |
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Figure 6. Total Noise Voltage |
Figure 7. Noise Figure |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
3 |
2N5088 |
2N5089 |
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4.0 |
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(NORMALIZED) |
3.0 |
VCE = 5.0 V |
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2.0 |
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TA = 125°C |
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25°C |
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GAIN |
1.0 |
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± 55°C |
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CURRENT |
0.7 |
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0.5 |
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0.4 |
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, DC |
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0.3 |
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FE |
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h |
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0.2 |
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0.2 |
0.3 |
0.5 |
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0.01 |
0.02 |
0.03 |
0.05 |
0.1 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
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IC, COLLECTOR CURRENT (mA) |
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Figure 8. DC Current Gain
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1.0 |
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TJ = 25°C |
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0.8 |
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(VOLTS) |
0.6 |
VBE @ VCE = 5.0 V |
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V, VOLTAGE |
0.4 |
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0.2 |
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0 |
VCE(sat) @ IC/IB = 10 |
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0.01 0.02 |
0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
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IC, COLLECTOR CURRENT (mA) |
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Figure 9. ªOnº Voltages
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± 0.4 |
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°C) |
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BASE±EMITTER |
COEFFICIENT (mV/ |
± 0.8 |
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± 1.2 |
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, |
TEMPERATURE |
± 1.6 |
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TJ = 25°C to 125°C |
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RθVBE |
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± 2.0 |
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± 55°C to 25°C |
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0.05 |
0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
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0.01 0.02 |
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IC, COLLECTOR CURRENT (mA) |
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Figure 10. Temperature Coefficients
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8.0 |
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(MHz) |
500 |
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6.0 |
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TJ = 25°C |
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, CURRENT±GAIN Ð BANDWIDTH PRODUCT |
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300 |
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C, CAPACITANCE (pF) |
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Cob |
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Cib |
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4.0 |
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Ceb |
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3.0 |
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Ccb |
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200 |
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2.0 |
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1.0 |
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70 |
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0.8 |
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50 |
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0.1 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
T |
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f |
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VR, REVERSE VOLTAGE (VOLTS) |
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VCE = 5.0 V |
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TJ = 25°C |
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1.0 |
2.0 |
3.0 |
5.0 |
7.0 10 |
20 |
30 |
50 |
70 |
100 |
IC, COLLECTOR CURRENT (mA)
Figure 11. Capacitance |
Figure 12. Current±Gain Ð Bandwidth Product |
4 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
2N5088 2N5089
PACKAGE DIMENSIONS
A |
B |
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R |
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P |
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L |
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SEATING |
F |
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PLANE |
K |
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D |
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X X |
J |
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G |
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H |
SECTION X±X |
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V |
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C |
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1 |
N |
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N |
CASE 029±04 (TO±226AA)
ISSUE AD
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.175 |
0.205 |
4.45 |
5.20 |
B |
0.170 |
0.210 |
4.32 |
5.33 |
C |
0.125 |
0.165 |
3.18 |
4.19 |
D |
0.016 |
0.022 |
0.41 |
0.55 |
F |
0.016 |
0.019 |
0.41 |
0.48 |
G |
0.045 |
0.055 |
1.15 |
1.39 |
H |
0.095 |
0.105 |
2.42 |
2.66 |
J |
0.015 |
0.020 |
0.39 |
0.50 |
K |
0.500 |
±±± |
12.70 |
±±± |
L |
0.250 |
±±± |
6.35 |
±±± |
N |
0.080 |
0.105 |
2.04 |
2.66 |
P |
±±± |
0.100 |
±±± |
2.54 |
R |
0.115 |
±±± |
2.93 |
±±± |
V |
0.135 |
±±± |
3.43 |
±±± |
STYLE 1:
PIN 1. EMITTER
2.BASE
3.COLLECTOR
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
5 |
2N5088 2N5089
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
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2N5088/D |
*2N5088/D*