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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N5550/D

Amplifier Transistors

NPN Silicon

 

 

 

 

COLLECTOR

 

 

 

 

 

3

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

BASE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

EMITTER

MAXIMUM RATINGS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Rating

Symbol

2N5550

2N5551

 

Unit

 

 

 

 

 

 

 

 

 

Collector± Emitter Voltage

VCEO

140

160

 

Vdc

Collector± Base Voltage

VCBO

160

180

 

Vdc

Emitter± Base Voltage

VEBO

6.0

 

 

Vdc

Collector Current Ð Continuous

IC

600

 

 

mAdc

Total Device Dissipation @ TA = 25°C

PD

625

 

 

mW

Derate above 25°C

 

5.0

 

 

mW/°C

 

 

 

 

 

 

 

 

Total Device Dissipation @ TC = 25°C

PD

1.5

 

 

Watts

Derate above 25°C

 

12

 

 

mW/°C

 

 

 

 

 

 

 

 

Operating and Storage Junction

TJ, Tstg

± 55 to +150

 

°C

Temperature Range

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

THERMAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Characteristic

Symbol

Max

 

Unit

 

 

 

 

 

 

 

 

Thermal Resistance, Junction to Ambient

RqJA

200

 

 

°C/W

Thermal Resistance, Junction to Case

RqJC

83.3

 

 

°C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

2N5550

2N5551*

*Motorola Preferred Device

1

2 3

CASE 29±04, STYLE 1 TO±92 (TO±226AA)

Characteristic

Symbol

Min

Max

Unit

 

 

 

 

 

OFF CHARACTERISTICS

Collector± Emitter Breakdown Voltage(1)

 

V(BR)CEO

140

Ð

Vdc

(IC = 1.0 mAdc, IB = 0)

2N5550

 

 

 

2N5551

 

160

Ð

 

 

 

 

 

 

 

Collector± Base Breakdown Voltage

 

V(BR)CBO

 

 

Vdc

(IC = 100 μAdc, IE = 0 )

2N5550

 

160

Ð

 

 

2N5551

 

180

Ð

 

 

 

 

 

 

 

Emitter± Base Breakdown Voltage

 

V(BR)EBO

6.0

Ð

Vdc

(IE = 10 μAdc, IC = 0)

 

 

 

 

 

Collector Cutoff Current

 

ICBO

Ð

100

nAdc

(VCB = 100 Vdc, IE = 0)

2N5550

 

(VCB = 120 Vdc, IE = 0)

2N5551

 

Ð

50

 

(VCB = 100 Vdc, IE = 0, TA = 100°C)

2N5550

 

Ð

100

μAdc

(VCB = 120 Vdc, IE = 0, TA = 100°C)

2N5551

 

Ð

50

 

Emitter Cutoff Current

 

IEBO

Ð

50

nAdc

(VEB = 4.0 Vdc, IC = 0)

 

 

 

 

 

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

 

 

 

 

 

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1996

2N5550

2N5551

 

 

 

 

 

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

 

 

 

 

 

Characteristic

 

Symbol

Min

Max

Unit

 

 

 

 

 

 

ON CHARACTERISTICS(1)

 

 

 

 

 

DC Current Gain

 

hFE

60

Ð

Ð

(IC = 1.0 mAdc, VCE = 5.0 Vdc)

2N5550

 

 

 

 

2N5551

 

80

Ð

 

(IC = 10 mAdc, VCE = 5.0 Vdc)

2N5550

 

60

250

 

 

 

2N5551

 

80

250

 

(IC = 50 mAdc, VCE = 5.0 Vdc)

2N5550

 

20

Ð

 

 

 

2N5551

 

30

Ð

 

 

 

 

 

 

 

Collector± Emitter Saturation Voltage

 

VCE(sat)

Ð

0.15

Vdc

(IC = 10 mAdc, IB = 1.0 mAdc)

Both Types

 

 

(IC = 50 mAdc, IB = 5.0 mAdc)

2N5550

 

Ð

0.25

 

 

 

2N5551

 

Ð

0.20

 

 

 

 

 

 

 

Base ± Emitter Saturation Voltage

 

VBE(sat)

Ð

1.0

Vdc

(IC = 10 mAdc, IB = 1.0 mAdc)

Both Types

 

 

(IC = 50 mAdc, IB = 5.0 mAdc)

2N5550

 

Ð

1.2

 

 

 

2N5551

 

Ð

1.0

 

 

 

 

 

 

 

SMALL± SIGNAL CHARACTERISTICS

 

 

 

 

 

 

 

 

 

 

 

Current± Gain Ð Bandwidth Product

 

fT

100

300

MHz

(IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz)

 

 

 

 

 

Output Capacitance

 

Cobo

Ð

6.0

pF

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

 

 

 

 

 

Input Capacitance

 

Cibo

Ð

30

pF

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)

2N5550

 

 

 

 

2N5551

 

Ð

20

 

 

 

 

 

 

 

Small±Signal Current Gain

 

hfe

50

200

Ð

(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

 

 

 

 

 

Noise Figure

 

NF

 

 

dB

(IC = 250 μAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ,

2N5550

 

Ð

10

 

f = 1.0 kHz)

2N5551

 

Ð

8.0

 

 

 

 

 

 

 

 

1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%.

2

Motorola Small±Signal Transistors, FETs and Diodes Device Data

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2N5550

2N5551

 

500

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

300

TJ = 125°C

 

 

 

 

 

 

 

 

 

 

 

VCE = 1.0 V

 

 

200

 

 

 

 

 

 

 

 

 

 

 

VCE = 5.0 V

 

GAIN

 

 

 

 

 

 

 

 

 

 

 

 

 

 

25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

± 55°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

, DC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

h

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

7.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5.0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

0.2

0.3

0.5

0.7

1.0

2.0

3.0

5.0

7.0

10

20

30

50

70

100

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

(VOLTS)

1.0

 

 

 

 

 

 

 

 

 

 

 

 

0.9

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOLTAGE

0.8

 

 

 

 

 

 

 

 

 

 

 

 

0.7

IC = 1.0 mA

 

 

 

10 mA

 

 

 

 

100 mA

 

 

0.6

 

 

 

 

30 mA

 

 

 

 

,COLLECTOR±EMITTER

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

 

 

 

0.3

 

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

0.1

 

 

 

 

 

 

 

 

 

 

 

 

CE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

10

20

50

 

 

 

 

 

 

IB, BASE CURRENT (mA)

 

 

 

 

 

Figure 2. Collector Saturation Region

Motorola Small±Signal Transistors, FETs and Diodes Device Data

3

2N5550 2N5551

 

101

 

 

 

 

 

 

 

 

 

 

 

100

VCE = 30 V

 

 

 

 

 

 

 

μA)

 

 

 

 

 

 

 

 

 

 

(

 

 

 

 

 

 

 

 

 

 

 

CURRENT

±1

TJ = 125°C

 

 

 

 

 

 

 

10

 

 

 

 

IC = ICES

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10±2

 

 

 

 

 

 

 

 

 

 

,COLLECTOR

 

 

75°C

 

 

 

 

 

 

 

10±3

 

REVERSE

 

FORWARD

 

 

 

 

 

 

 

25°C

 

 

 

 

 

 

 

C

10±4

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10±5

 

 

 

 

 

 

 

 

 

 

 

0.4

0.3

0.2

0.1

0

0.1

0.2

0.3

0.4

0.5

0.6

 

 

 

VBE, BASE±EMITTER VOLTAGE (VOLTS)

 

 

Figure 3. Collector Cut±Off Region

 

1.0

TJ = 25°C

 

 

 

 

 

 

 

 

°C)

 

 

 

 

 

 

 

 

 

 

 

0.8

 

 

 

 

 

 

 

 

 

(mV/

VOLTAGEV, (VOLTS)

 

 

 

 

 

 

 

 

 

TEMPERATURE, COEFFICIENT

 

VCE(sat) @ IC/IB = 10

 

 

 

 

 

 

 

 

VBE(sat) @ IC/IB = 10

 

 

 

 

 

 

 

 

0.6

 

 

 

 

 

 

 

 

 

 

 

0.4

 

 

 

 

 

 

 

 

 

 

 

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

V

 

 

 

 

 

 

 

 

 

 

 

θ

 

0

0.2 0.3

 

1.0

2.0 3.0

5.0

10

20

30

50

100

 

0.1

0.5

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

 

2.5

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

TJ = ± 55°C to +135°C

 

 

 

 

1.5

 

 

 

 

 

 

 

 

 

 

1.0

 

 

 

 

 

 

 

 

 

 

0.5

 

 

 

 

qVC for VCE(sat)

 

 

 

0

 

 

 

 

 

 

 

 

 

 

± 0.5

 

 

 

 

 

 

 

 

 

 

± 1.0

 

 

 

 

qVB for VBE(sat)

 

 

± 1.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

± 2.0

 

 

 

 

 

 

 

 

 

 

± 2.5

 

 

 

 

 

 

 

 

 

 

0.1

0.2 0.3

0.5

1.0

2.0 3.0

5.0

10

20

30

50

100

IC, COLLECTOR CURRENT (mA)

Figure 4. ªOnº Voltages

Figure 5. Temperature Coefficients

10.2 V

 

 

VBB

VCC

 

 

 

 

± 8.8 V

30 V

Vin

 

 

 

100

3.0 k RC

 

 

 

 

μ

 

0.25 μF

RB

 

10 s

 

 

 

Vout

INPUT PULSE

 

 

 

5.1 k

 

 

 

 

 

tr, tf 10 ns

V

 

 

100

1N914

DUTY CYCLE = 1.0%

in

 

 

 

 

 

 

 

 

Values Shown are for IC @ 10 mA

 

100

 

 

 

 

 

 

 

 

 

 

 

70

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

50

 

 

 

 

 

 

 

 

 

 

(pF)

30

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

C, CAPACITANCE

10

 

 

 

 

 

 

 

 

 

 

7.0

 

 

 

 

 

 

Cibo

 

 

5.0

 

 

 

 

 

 

 

 

 

 

3.0

 

 

 

 

 

 

 

 

Cobo

 

 

 

 

 

 

 

 

 

 

 

 

2.0

 

 

 

 

 

 

 

 

 

 

 

1.0

0.3

 

0.7

 

 

3.0

 

7.0

 

 

 

0.2

0.5

1.0

2.0

5.0

10

20

 

 

 

 

VR, REVERSE VOLTAGE (VOLTS)

 

 

 

Figure 6. Switching Time Test Circuit

Figure 7. Capacitances

4

Motorola Small±Signal Transistors, FETs and Diodes Device Data

 

1000

 

 

 

 

 

 

 

IC/IB = 10

 

 

 

 

 

 

 

 

 

 

 

 

500

 

 

 

 

 

 

 

TJ = 25°C

 

 

300

 

 

 

 

 

tr @ VCC = 120 V

 

 

 

200

 

 

 

 

 

 

 

 

 

 

(ns)

tr @ VCC = 30 V

 

 

 

 

 

 

 

 

t, TIME

100

 

 

 

 

 

 

 

 

 

 

 

td @ VEB(off) = 1.0 V

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

 

30

 

VCC = 120 V

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

20

30

50

100

200

 

0.2 0.3

0.5

1.0

2.0 3.0

5.0

10

IC, COLLECTOR CURRENT (mA)

Figure 8. Turn±On Time

 

 

 

 

 

 

 

 

 

2N5550

2N5551

 

5000

 

 

 

 

 

 

 

 

 

IC/IB = 10

 

 

3000

 

 

 

tf @ VCC = 120 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 25°C

 

 

2000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tf @ VCC = 30 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(ns)

1000

 

 

 

 

 

 

 

 

 

 

 

 

500

 

 

 

 

 

 

 

 

 

 

 

 

t, TIME

 

 

 

 

 

 

 

 

 

 

 

 

300

ts @ VCC = 120 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

 

 

20

30

50

100

200

 

0.2 0.3

0.5

1.0

2.0

3.0

5.0

10

 

 

 

 

IC, COLLECTOR CURRENT (mA)

 

 

 

Figure 9. Turn±Off Time

Motorola Small±Signal Transistors, FETs and Diodes Device Data

5

2N5550 2N5551

PACKAGE DIMENSIONS

A

B

 

R

 

 

P

 

L

SEATING

F

PLANE

K

 

D

X X

J

 

G

H

SECTION X±X

V

C

1

N

 

N

CASE 029±04 (TO±226AA)

ISSUE AD

NOTES:

1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2.CONTROLLING DIMENSION: INCH.

3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.175

0.205

4.45

5.20

B

0.170

0.210

4.32

5.33

C

0.125

0.165

3.18

4.19

D

0.016

0.022

0.41

0.55

F

0.016

0.019

0.41

0.48

G

0.045

0.055

1.15

1.39

H

0.095

0.105

2.42

2.66

J

0.015

0.020

0.39

0.50

K

0.500

±±±

12.70

±±±

L

0.250

±±±

6.35

±±±

N

0.080

0.105

2.04

2.66

P

±±±

0.100

±±±

2.54

R

0.115

±±±

2.93

±±±

V

0.135

±±±

3.43

±±±

STYLE 1:

PIN 1. EMITTER

2.BASE

3.COLLECTOR

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

 

USA/EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ± TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

2N5550/D

*2N5550/D*

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