MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N4400/D
General Purpose Transistors
NPN Silicon
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COLLECTOR |
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BASE |
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1 |
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EMITTER |
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MAXIMUM RATINGS |
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Rating |
Symbol |
Value |
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Unit |
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Collector± Emitter Voltage |
VCEO |
40 |
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Vdc |
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Collector± Base Voltage |
VCBO |
60 |
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Vdc |
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Emitter± Base Voltage |
VEBO |
6.0 |
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Vdc |
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Collector Current Ð Continuous |
IC |
600 |
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mAdc |
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Total Device Dissipation @ TA = 25°C |
PD |
625 |
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mW |
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Derate above 25°C |
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5.0 |
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mW/°C |
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Total Device Dissipation @ TC = 25°C |
PD |
1.5 |
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Watts |
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Derate above 25°C |
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12 |
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mW/°C |
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Operating and Storage Junction |
TJ, Tstg |
± 55 to +150 |
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°C |
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Temperature Range |
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THERMAL CHARACTERISTICS |
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Characteristic |
Symbol |
Max |
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Unit |
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Thermal Resistance, Junction to Ambient |
RqJA |
200 |
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°C/W |
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Thermal Resistance, Junction to Case |
RqJC |
83.3 |
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°C/W |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
2N4400
2N4401*
*Motorola Preferred Device
1
2 3
CASE 29±04, STYLE 1 TO±92 (TO±226AA)
Characteristic |
Symbol |
Min |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector± Emitter Breakdown Voltage(1) |
V(BR)CEO |
40 |
Ð |
Vdc |
(IC = 1.0 mAdc, IB = 0) |
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Collector± Base Breakdown Voltage |
V(BR)CBO |
60 |
Ð |
Vdc |
(IC = 0.1 mAdc, IE = 0) |
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Emitter± Base Breakdown Voltage |
V(BR)EBO |
6.0 |
Ð |
Vdc |
(IE = 0.1 mAdc, IC = 0) |
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Base Cutoff Current |
IBEV |
Ð |
0.1 |
μAdc |
(VCE = 35 Vdc, VEB = 0.4 Vdc) |
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Collector Cutoff Current |
ICEX |
Ð |
0.1 |
μAdc |
(VCE = 35 Vdc, VEB = 0.4 Vdc) |
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1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. |
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Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
Motorola, Inc. 1996
2N4400 |
2N4401 |
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) |
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Characteristic |
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Symbol |
Min |
Max |
Unit |
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ON CHARACTERISTICS(1) |
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DC Current Gain |
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hFE |
20 |
Ð |
Ð |
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(IC = 0.1 mAdc, VCE = 1.0 Vdc) |
2N4401 |
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(IC = 1.0 mAdc, VCE = 1.0 Vdc) |
2N4400 |
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20 |
Ð |
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2N4401 |
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40 |
Ð |
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(IC = 10 mAdc, VCE = 1.0 Vdc) |
2N4400 |
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40 |
Ð |
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2N4401 |
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80 |
Ð |
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(IC = 150 mAdc, VCE = 1.0 Vdc) |
2N4400 |
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50 |
150 |
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2N4401 |
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100 |
300 |
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(IC = 500 mAdc, VCE = 2.0 Vdc) |
2N4400 |
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20 |
Ð |
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2N4401 |
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40 |
Ð |
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Collector± Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) |
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VCE(sat) |
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0.4 |
Vdc |
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Collector± Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) |
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Ð |
0.75 |
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Base ± Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) |
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VBE(sat) |
0.75 |
0.95 |
Vdc |
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Base ± Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) |
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Ð |
1.2 |
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SMALL± SIGNAL CHARACTERISTICS |
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Current± Gain Ð Bandwidth Product |
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fT |
200 |
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MHz |
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(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) |
2N4400 |
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2N4401 |
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250 |
Ð |
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Collector±Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) |
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Ccb |
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6.5 |
pF |
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Emitter±Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) |
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Ceb |
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30 |
pF |
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Input Impedance |
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hie |
0.5 |
7.5 |
k ohms |
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(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
2N4400 |
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2N4401 |
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1.0 |
15 |
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Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
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hre |
0.1 |
8.0 |
X 10±4 |
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Small±Signal Current Gain |
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hfe |
20 |
250 |
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(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
2N4400 |
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2N4401 |
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40 |
500 |
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Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) |
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hoe |
1.0 |
30 |
μmhos |
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SWITCHING CHARACTERISTICS |
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Delay Time |
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(VCC = 30 Vdc, VBE = 2.0 Vdc, |
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td |
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15 |
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Rise Time |
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IC = 150 mAdc, IB1 = 15 mAdc) |
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tr |
Ð |
20 |
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Storage Time |
(VCC = 30 Vdc, IC = 150 mAdc, |
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ts |
Ð |
225 |
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Fall Time |
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IB1 = IB2 = 15 mAdc) |
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tf |
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30 |
ns |
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
SWITCHING TIME EQUIVALENT TEST CIRCUITS
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+ 30 V |
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1.0 to 100 μs, |
200 Ω |
+16 V |
1.0 to 100 μs, |
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+16 V |
DUTY CYCLE ≈ 2.0% |
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DUTY CYCLE ≈ 2.0% |
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0 |
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0 |
1.0 kΩ |
± 2.0 V |
1.0 k |
Ω |
CS* < 10 pF |
±14 V |
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< 20 ns |
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< 2.0 ns |
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Scope rise time < 4.0 ns |
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± 4.0 V |
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*Total shunt capacitance of test jig connectors, and oscilloscope |
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+ 30 V
200 Ω
CS* < 10 pF
Figure 1. Turn±On Time |
Figure 2. Turn±Off Time |
2 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
2N4400 2N4401
TRANSIENT CHARACTERISTICS
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25°C |
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30 |
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20 |
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(pF) |
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Cobo |
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10 |
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CAPACITANCE |
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7.0 |
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5.0 |
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3.0 |
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Ccb |
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2.0 |
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20 |
30 |
50 |
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0.1 |
0.2 |
0.3 |
0.5 |
1.0 |
2.0 |
3.0 |
5.0 |
10 |
REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitances
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100 |
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70 |
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IC/IB = 10 |
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50 |
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(ns) |
30 |
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tr @ VCC = 30 V |
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tr @ VCC = 10 V |
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TIME |
20 |
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td @ VEB = 2.0 V |
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td @ VEB = 0 |
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t, |
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10 |
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7.0 |
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5.0 |
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200 |
300 |
500 |
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10 |
20 |
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70 |
100 |
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IC, COLLECTOR CURRENT (mA)
Figure 5. Turn±On Time
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300 |
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ts′= ts ± 1/8 tf |
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200 |
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IB1 = IB2 |
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IC/IB = 10 to 20 |
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TIME (ns) |
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′, STORAGE |
100 |
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70 |
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t |
50 |
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30 |
20 |
30 |
50 |
70 |
100 |
200 |
300 |
500 |
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10 |
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IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
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100°C |
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10 |
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7.0 |
VCC = 30 V |
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5.0 |
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IC/IB = 10 |
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3.0 |
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QT |
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(nC) |
2.0 |
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Q, CHARGE |
1.0 |
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0.7 |
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0.5 |
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0.3 |
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0.2 |
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QA |
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0.1 |
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200 |
300 |
500 |
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10 |
20 |
30 |
50 |
70 |
100 |
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IC, COLLECTOR CURRENT (mA) |
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Figure 4. Charge Data
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100 |
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70 |
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tr |
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VCC = 30 V |
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50 |
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IC/IB = 10 |
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(ns) |
30 |
tf |
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t, TIME |
20 |
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10 |
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7.0 |
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5.0 |
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200 |
300 |
500 |
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20 |
30 |
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70 |
100 |
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IC, COLLECTOR CURRENT (mA) |
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Figure 6. Rise and Fall Times
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100 |
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70 |
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VCC = 30 V |
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50 |
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IB1 = IB2 |
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IC/IB = 20 |
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(ns) |
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30 |
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TIME |
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20 |
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IC/IB = 10 |
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, FALL |
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f |
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t |
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10 |
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7.0 |
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5.0 |
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200 |
300 |
500 |
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10 |
20 |
30 |
50 |
70 |
100 |
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IC, COLLECTOR CURRENT (mA) |
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Figure 8. Fall Time
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
3 |
2N4400 2N4401
SMALL±SIGNAL CHARACTERISTICS
NOISE FIGURE
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VCE = 10 Vdc, TA = 25°C |
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Bandwidth = 1.0 Hz |
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10 |
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10 |
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IC = 1.0 mA, RS = 150 Ω |
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f = 1.0 kHz |
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8.0 |
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IC = 500 μA, RS = 200 Ω |
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RS = OPTIMUM |
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8.0 |
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IC = 100 μA, RS = 2.0 kΩ |
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RS = SOURCE |
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IC = 50 |
μ |
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(dB) |
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IC = 50 μA, RS = 4.0 kΩ |
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RS = RESISTANCE |
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(dB) |
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A |
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IC = 100 |
μ |
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FIGURE |
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FIGURE |
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A |
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6.0 |
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6.0 |
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IC = 500 μA |
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IC = 1.0 mA |
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NF, NOISE |
4.0 |
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NF, NOISE |
4.0 |
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2.0 |
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2.0 |
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0 |
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20 |
50 |
100 |
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0 |
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0.01 |
0.02 |
0.05 0.1 0.2 |
0.5 1.0 |
2.0 |
5.0 |
10 |
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50 |
100 |
200 |
500 |
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1.0 k |
2.0 k |
5.0 k |
10 k |
20 k |
50 k |
100 k |
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f, FREQUENCY (kHz) |
RS, SOURCE RESISTANCE (OHMS) |
Figure 9. Frequency Effects |
Figure 10. Source Resistance Effects |
h PARAMETERS
VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C
selected from both the 2N4400 and 2N4401 lines, and the same units were used to develop the correspondingly numbered curves on each graph.
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300 |
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200 |
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GAIN |
100 |
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, CURRENT |
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70 |
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50 |
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2N4401 UNIT 1 |
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fe |
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2N4401 UNIT 2 |
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h |
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2N4400 UNIT 1 |
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30 |
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2N4400 UNIT 2 |
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20 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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0.1 |
||||||||||
IC, COLLECTOR CURRENT (mA)
Figure 11. Current Gain
|
50 k |
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2N4401 UNIT 1 |
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(OHMS) |
20 k |
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2N4401 UNIT 2 |
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2N4400 UNIT 1 |
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2N4400 UNIT 2 |
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IMPEDANCE |
10 k |
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5.0 k |
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, INPUT |
2.0 k |
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ie |
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h |
1.0 k |
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500 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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0.1 |
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IC, COLLECTOR CURRENT (mA)
Figure 12. Input Impedance
±4 ) |
10 |
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7.0 |
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10 |
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5.0 |
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(X |
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2N4401 UNIT 1 |
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RATIO |
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3.0 |
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2N4401 UNIT 2 |
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2N4400 UNIT 1 |
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FEEDBACK |
2.0 |
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2N4400 UNIT 2 |
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1.0 |
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, VOLTAGE |
0.7 |
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0.5 |
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0.3 |
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re |
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h |
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0.2 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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0.1 |
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IC, COLLECTOR CURRENT (mA)
Figure 13. Voltage Feedback Ratio
|
100 |
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mhos) |
50 |
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m |
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( |
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ADMITTANCE |
20 |
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10 |
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OUTPUT |
5.0 |
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2N4401 UNIT 1 |
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2N4401 UNIT 2 |
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, |
2.0 |
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2N4400 UNIT 1 |
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oe |
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h |
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2N4400 UNIT 2 |
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1.0 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
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0.1 |
||||||||||
IC, COLLECTOR CURRENT (mA)
Figure 14. Output Admittance
4 |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
2N4400 2N4401
STATIC CHARACTERISTICS
|
3.0 |
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2.0 |
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VCE = 1.0 V |
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GAIN |
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VCE = 10 V |
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TJ = 125°C |
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CURRENT |
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1.0 |
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25°C |
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0.7 |
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,NORMALIZED |
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0.5 |
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± 55°C |
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0.3 |
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FE |
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h |
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0.2 |
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70 |
100 |
200 |
300 |
500 |
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0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
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IC, COLLECTOR CURRENT (mA) |
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Figure 15. DC Current Gain
(VOLTS) |
1.0 |
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TJ |
= 25°C |
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VOLTAGE |
0.8 |
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, COLLECTOR±EMITTER |
0.6 |
IC = 1.0 mA |
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10 mA |
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100 mA |
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500 mA |
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0.4 |
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0.2 |
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CE |
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V |
0 |
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0.02 |
0.03 |
0.05 |
0.07 |
0.1 |
0.2 |
0.3 |
0.5 |
0.7 |
1.0 |
2.0 |
3.0 |
5.0 |
7.0 |
10 |
20 |
30 |
50 |
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0.01 |
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IB, BASE CURRENT (mA) |
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Figure 16. Collector Saturation Region
|
1.0 |
TJ = 25°C |
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+ 0.5 |
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VBE(sat) @ IC/IB = 10 |
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0.8 |
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0 |
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qVC for VCE(sat) |
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(VOLTS)VOLTAGE |
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(mV/COEFFICIENT°C) |
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0.6 |
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± 0.5 |
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VBE @ VCE = 10 V |
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± 1.0 |
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0.4 |
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± 1.5 |
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0.2 |
|
VCE(sat) @ IC/IB = 10 |
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± 2.0 |
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qVB for VBE |
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|
0 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
± 2.5 |
0.2 |
0.5 |
1.0 |
2.0 |
5.0 |
10 |
20 |
50 |
100 |
200 |
500 |
|
0.1 |
0.1 |
||||||||||||||||||||||
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IC, COLLECTOR CURRENT (mA) |
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IC, COLLECTOR CURRENT (mA) |
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||||||||||
Figure 17. ªOnº Voltages |
Figure 18. Temperature Coefficients |
Motorola Small±Signal Transistors, FETs and Diodes Device Data |
5 |
2N4400 2N4401
PACKAGE DIMENSIONS
A |
B |
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||
R |
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P |
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L |
|
SEATING |
F |
|
PLANE |
K |
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D |
|
X X |
J |
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G |
|
H |
SECTION X±X |
|
V |
||
C |
||
1 |
N |
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|
N |
CASE 029±04 (TO±226AA)
ISSUE AD
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: INCH.
3.CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.
4.DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.
|
INCHES |
MILLIMETERS |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
0.175 |
0.205 |
4.45 |
5.20 |
B |
0.170 |
0.210 |
4.32 |
5.33 |
C |
0.125 |
0.165 |
3.18 |
4.19 |
D |
0.016 |
0.022 |
0.41 |
0.55 |
F |
0.016 |
0.019 |
0.41 |
0.48 |
G |
0.045 |
0.055 |
1.15 |
1.39 |
H |
0.095 |
0.105 |
2.42 |
2.66 |
J |
0.015 |
0.020 |
0.39 |
0.50 |
K |
0.500 |
±±± |
12.70 |
±±± |
L |
0.250 |
±±± |
6.35 |
±±± |
N |
0.080 |
0.105 |
2.04 |
2.66 |
P |
±±± |
0.100 |
±±± |
2.54 |
R |
0.115 |
±±± |
2.93 |
±±± |
V |
0.135 |
±±± |
3.43 |
±±± |
STYLE 1:
PIN 1. EMITTER
2.BASE
3.COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
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◊ |
2N4400/D |
*2N4400/D*