Добавил:
Опубликованный материал нарушает ваши авторские права? Сообщите нам.
Вуз: Предмет: Файл:

motorola / IGBT / mhpm7b12a120arev0

.pdf
Источник:
Скачиваний:
4
Добавлен:
06.01.2022
Размер:
251.53 Кб
Скачать

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MHPM7B12A120A/D

Hybrid Power Module

Integrated Power Stage for 2.0 hp Motor Drives

This module integrates a 3±phase input rectifier bridge, 3±phase output inverter and brake transistor/diode in a single convenient package. The output inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free±wheeling diodes to give optimal dynamic performance. It has been configured for use as a three±phase motor drive module or for many other power switching applications. The top connector pins have been designed for easy interfacing to the user's control board.

Short Circuit Rated 10 μs @ 25°C

Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)

Convenient Package Outline

UL Recognized and Designed to Meet VDE

Access to Positive and Negative DC Bus

MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)

MHPM7B12A120A

Motorola Preferred Device

12 AMP, 1200 VOLT

HYBRID POWER MODULE

PLASTIC PACKAGE

CASE 440-01, Style 1

Rating

Symbol

Value

Unit

 

 

 

 

INPUT RECTIFIER BRIDGE

 

 

 

 

 

 

 

Repetitive Peak Reverse Voltage

VRRM

1200

V

Average Output Rectified Current (1)

IO

12

A

Peak Non-repetitive Surge Current

IFSM

200

A

OUTPUT INVERTER

 

 

 

 

 

 

 

IGBT Reverse Voltage

VCES

1200

V

Gate-Emitter Voltage

VGES

± 20

V

Continuous IGBT Collector Current

IC

12

A

Peak IGBT Collector Current ± (PW = 1.0 ms) (2)

IC(pk)

24

A

Continuous Free-Wheeling Diode Current

IF

12

A

Peak Free-Wheeling Diode Current ± (PW = 1.0 ms) (2)

IF(pk)

24

A

IGBT Power Dissipation

PD

60

W

Free-Wheeling Diode Power Dissipation

PD

40

W

IGBT Junction Temperature Range

TJ

± 40 to +125

°C

Free-Wheeling Diode Junction Temperature Range

TJ

± 40 to +125

°C

(1) 1 cycle = 50 or 60 Hz

(2) 1 ms = 1.0% duty cycle

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1995

MOTOROLA

1

MAXIMUM DEVICE RATINGS (continued) (TJ = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

 

 

 

 

BRAKE CIRCUIT

 

 

 

 

 

 

 

IGBT Reverse Voltage

VCES

1200

V

Gate-Emitter Voltage

VGES

± 20

V

Continuous IGBT Collector Current

IC

12

A

Peak IGBT Collector Current (PW = 1.0 ms) (2)

IC(pk)

24

A

IGBT Power Dissipation

PD

60

W

 

 

 

 

Diode Reverse Voltage

VRRM

1200

V

Continuous Output Diode Current

IF

12

A

Peak Output Diode Current (PW = 1.0 ms) (2)

IF(pk)

24

A

TOTAL MODULE

 

 

 

 

 

 

 

Isolation Voltage ± (47±63 Hz, 1.0 Minute Duration)

VISO

2500

VAC

Ambient Operating Temperature Range

TA

± 40 to + 85

°C

Operating Case Temperature Range

TC

± 40 to + 90

°C

Storage Temperature Range

Tstg

± 40 to +150

°C

Mounting Torque

±

6.0

lb±in

 

 

 

 

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

INPUT RECTIFIER BRIDGE

 

 

 

 

 

 

 

 

 

 

 

Reverse Leakage Current (VRRM = 1200 V)

IR

±

10

50

μA

Forward Voltage (IF = 12 A)

VF

±

1.03

1.5

V

Thermal Resistance (Each Die)

RθJC

±

±

2.9

°C/W

OUTPUT INVERTER

 

 

 

 

 

 

 

 

 

 

 

Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)

IGES

±

±

± 20

μA

Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)

ICES

 

 

 

 

TJ = 25°C

 

±

±

100

μA

TJ = 125°C

 

±

±

2.0

mA

Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)

VGE(th)

4.0

6.0

8.0

V

Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)

V(BR)CES

1200

1300

±

V

Collector-Emitter Saturation Voltage (IC = 12 A, VGE = 15 V)

VCE(SAT)

±

2.4

3.5

V

Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)

Cies

±

1800

±

pF

Input Gate Charge (VCE = 600 V, IC = 12 A, VGE = 15 V)

QT

±

65

±

nC

Fall Time ± Inductive Load

tfi

 

 

 

 

(VCE = 600 V, IC = 12 A, VGE = 15 V, RG = 150 Ω)

 

±

300

500

ns

Turn-On Energy

E(on)

±

±

2.0

mJ

(VCE = 600 V, IC = 12 A, VGE = 15 V, RG = 150 Ω)

 

 

 

 

 

Turn-Off Energy

E(off)

±

±

2.0

mJ

(VCE = 600 V, IC = 12 A, VGE = 15 V, RG = 150 Ω)

 

 

 

 

 

Diode Forward Voltage (IF = 12 A, VGE = 0 V)

VF

±

1.7

2.2

V

Diode Reverse Recovery Time

trr

 

 

 

 

(IF = 12 A, V = 600 V, dI/dt = 100 A/μs)

 

±

160

200

ns

Diode Stored Charge (IF = 12 A, V = 600 V, di/dt = 100 A/μs)

Qrr

±

800

950

nC

Thermal Resistance ± IGBT (Each Die)

RθJC

±

±

1.7

°C/W

Thermal Resistance ± Free-Wheeling Diode (Each Die)

RθJC

±

±

2.7

°C/W

(2) 1.0 ms = 1.0% duty cycle

 

 

 

 

 

MHPM7B12A120A

MOTOROLA

2

 

ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

 

 

 

 

 

 

BRAKE CIRCUIT

 

 

 

 

 

 

 

 

 

 

 

Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)

IGES

±

±

± 20

μA

Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)

ICES

 

 

 

 

TJ = 25°C

 

±

±

100

μA

TJ = 125°C

 

±

±

2.0

mA

Gate-Emitter Threshold Voltage (VCE = VGE, IC = 10 mA)

VGE(th)

4.0

6.0

8.0

V

Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)

V(BR)CES

1200

1300

±

V

Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 12 A)

VCE(SAT)

±

2.4

3.5

V

Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)

Cies

±

1800

±

pF

Input Gate Charge (VCE = 600 V, IC = 12 A, VGE = 15 V)

QT

±

65

±

nC

Fall Time ± Inductive Load

tfi

 

 

 

 

(VCE = 600 V, IC = 12 A, VGE = 15 V, RG = 150 Ω)

 

±

300

500

ns

Turn-On Energy

E(on)

 

 

 

 

(VCE = 600 V, IC = 12 A, VGE = 15 V, RG = 150 Ω)

 

±

±

2.0

mJ

Turn-Off Energy

E(off)

 

 

 

 

(VCE = 600 V, IC = 12 A, VGE = 15 V, RG = 150 Ω)

 

±

±

2.0

mJ

Diode Forward Voltage (IF = 12 A

VF

±

1.7

2.2

V

Diode Reverse Leakage Current

IR

±

±

50

μA

Thermal Resistance ± IGBT

RθJC

±

±

1.7

°C/W

Thermal Resistance ± Diode

RθJC

±

±

2.7

°C/W

MOTOROLA

MHPM7B12A120A

 

3

4

MHPM7B12A120A

Schematic Stage Power Integrated .1 Figure

MOTOROLA

 

 

 

1

7

 

 

 

 

 

 

 

 

 

P1

P2

 

 

 

 

 

 

 

 

 

 

 

Q1

 

Q3

 

Q5

 

 

 

 

9

 

D1

11

D3

13

D5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

G1

 

 

G3

 

G5

 

 

 

 

 

E1

 

 

E3

 

E5

 

 

 

 

 

8

 

 

10

 

12

 

 

 

 

 

 

 

 

 

 

 

U

20

24

R

 

 

 

 

 

 

 

V

19

 

 

 

B

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

23

S

 

21

 

 

 

 

 

W

18

22

T

 

Q7

 

Q2

 

Q4

 

Q6

 

 

 

 

 

 

 

 

 

15

16

 

D2

17

D4

14

D6

 

 

 

 

 

 

 

 

 

 

 

G7

G2

 

 

G4

 

G6

 

 

 

N1

N2

 

 

 

 

 

 

 

 

 

25

6

 

 

 

 

 

 

 

 

 

 

 

 

NC

2

 

 

 

DEVICE INTEGRATION

 

 

 

 

 

 

 

 

 

NC

 

 

3

These pins are physical

 

 

 

 

 

 

 

= PIN NUMBER IDENTIFICATION

 

terminations but not

3±Phase

Brake

3±Phase

 

NC

 

 

4

connected internally.

Input

Output

 

 

IGBT/

 

 

 

 

 

Rectifier

IGBT/Diode

 

 

 

 

 

Diode

NC

 

 

5

 

Bridge

Bridge

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Typical Characteristics

 

 

 

 

 

20

 

VGE = 18 V

 

 

 

20

TJ = 125°C

VGE = 18 V

 

 

 

 

TJ = 25°C

 

 

 

 

18

 

 

 

 

18

 

 

 

 

 

 

 

 

 

 

(A)

16

 

15 V

12 V

 

(A)

16

 

 

12 V

 

 

CURRENT

14

 

 

 

 

CURRENT

14

 

 

 

 

 

12

 

 

 

 

12

 

 

15 V

 

 

 

 

 

 

 

 

 

 

 

 

, COLLECTOR

10

 

 

 

 

, COLLECTOR

10

 

 

 

 

 

 

 

 

 

 

 

 

 

8

 

 

 

 

8

 

 

 

 

 

6

 

 

 

 

6

 

 

 

 

9 V

4

 

 

 

 

4

 

 

 

 

C

 

 

 

 

C

 

 

 

 

 

I

 

 

 

 

I

 

 

 

 

 

 

2

 

 

 

 

9 V

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

0

 

 

 

 

 

 

0

1

2

3

4

5

0

1

2

3

4

5

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (V)

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (V)

 

Figure 2. Output Inverter Collector Current IC

Figure 3. Output Inverter Collector Current IC

versus Collector±Emitter Voltage VCE

versus Collector±Emitter Voltage VCE

(V)

10

IC = 6 A

24 A

 

 

TJ = 25°C

1000

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

COLLECTOR±EMITTERVOLTAGE

8

 

 

 

 

 

 

 

 

 

 

t(off)

 

 

 

 

 

 

SWITCHINGTIME (ns)

 

VGE = 15 V

 

 

 

tf

 

2

 

 

12 A

 

 

 

 

 

 

 

 

6

 

 

 

 

 

 

 

 

 

 

td

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCE = 600 V

 

 

 

 

 

,

 

 

 

 

 

 

 

RG = 10 Ω

 

 

 

 

 

CE

 

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

V

0

 

 

 

 

 

10

 

 

 

 

 

 

10

12

14

16

18

4

6

8

10

12

14

 

8

2

 

 

 

VGE, GATE±EMITTER VOLTAGE (V)

 

 

 

 

IC, COLLECTOR CURRENT (A)

 

 

Figure 4. Inverter Collector±Emitter Voltage VCE

Figure 5. Inverter Switching Time td, tf, t(off)

versus Gate±Emitter Voltage VGE

versus Collector Current IC

SWITCHING TIME (ns)

10000

 

 

 

 

 

 

10000

 

 

 

VCE = 600 V

 

 

 

 

 

 

 

VCE = 600 V

 

 

VGE = 15 V

 

 

 

 

 

 

 

VGE = 15 V

 

 

RG = 10 Ω

 

 

 

 

 

(ns)

 

IC = 12 A

 

 

TJ = 125°C

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

t(off)

 

TIME

 

t(off)

 

1000

 

 

 

 

tf

 

SWITCHING

1000

 

td

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

td

 

 

 

 

tf

100

 

 

 

 

 

 

 

100

 

 

2

4

6

8

10

12

14

 

10

100

1000

 

 

IC, COLLECTOR CURRENT (A)

 

 

 

 

RG, GATE RESISTANCE (Ω)

 

Figure 6. Inverter Switching Time td, tf, t(off)

Figure 7. Inverter Switching Time td, tf, t(off)

versus Collector Current IC

versus Gate Resistance RG

MOTOROLA

MHPM7B12A120A

 

5

 

 

 

Typical Characteristics

 

 

 

 

 

10000

 

 

80

 

 

 

 

 

 

 

VCE = 600 V

 

70

VCE = 600 V

 

 

 

 

 

 

VGE = 15 V

 

 

VGE = 15 V

 

 

 

 

(ns)

 

IC = 12 A

(ns)

60

RG = 10 Ω

 

TJ = 125°C

 

 

 

TJ = 125°C

 

 

 

TIME

 

t(off)

TIME

50

 

 

 

 

 

1000

 

 

 

 

 

 

SWITCHING

 

SWITCHING

40

 

 

 

 

 

 

td

30

 

 

 

 

 

 

 

 

 

 

25°C

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

tf

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

0

 

 

 

 

 

 

10

100

1000

2

4

6

8

10

12

 

 

RG, GATE RESISTANCE (Ω)

 

 

 

IC, COLLECTOR CURRENT (A)

 

Figure 8. Inverter Switching Time td, tf, t(off)

Figure 9. Inverter Switching Time tr versus

versus Gate Resistance RG

Collector Current IC

 

10000

 

 

10000

 

 

 

 

 

 

 

 

VCE = 600 V

 

 

VCE = 600 V

 

 

 

 

 

 

 

VGE = 15 V

 

 

VGE = 15 V

 

 

TJ = 125°C

 

 

TIMESWITCHING(ns)

 

IC = 12 A

J)

 

RG = 10 Ω

 

 

 

 

 

1000

25°C

ENERGYSWITCHING(μ

1000

 

 

 

 

 

 

 

TJ = 125°C

 

 

 

 

25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

 

 

100

 

 

 

 

 

 

 

10

 

 

10

 

 

 

 

 

 

 

10

100

1000

2

4

6

8

10

12

14

 

 

RG, GATE RESISTANCE (Ω)

 

 

 

IC, COLLECTOR CURRENT (A)

 

 

Figure 10. Inverter Switching Time tr versus

Figure 11. Inverter Switching Energy E(off)

Gate Resistance RG

versus Collector Current IC

 

10000

 

 

μJ)

 

TJ = 125°C

 

(

 

 

 

ENERGY

1000

25°C

 

 

 

SWITCHING

 

VCE = 600 V

 

 

 

 

 

 

VGE = 15 V

 

 

 

IC = 12 A

 

 

100

 

 

 

10

100

1000

 

 

RG, GATE RESISTANCE (Ω)

 

(V)

900

 

 

 

 

 

 

18

 

800

 

 

 

 

 

 

16

 

VOLTAGE

 

 

 

 

500 V

 

VOLTAGE (V)

 

 

 

 

 

 

 

700

 

 

 

 

400 V

 

14

600

 

 

 

 

 

12

 

 

 

 

 

600 V

 

 

 

 

 

 

 

 

COLLECTOR±EMITTER

500

 

 

 

 

 

 

10

,GATE±EMITTER

400

 

 

 

 

 

 

8

300

 

 

 

 

 

 

6

200

 

 

 

 

 

 

4

 

 

 

 

 

 

GE

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

V

CE

100

 

 

 

 

 

 

2

V

 

 

 

 

 

 

 

0

 

 

0

10

20

 

 

 

60

 

 

0

30

40

50

70

 

QG, GATE CHARGE (nC)

Figure 12. Inverter Switching Energy E(off)

Figure 13. Gate±to±Emitter Voltage versus

versus Gate Resistance RG

Gate Charge

 

 

MHPM7B12A120A

MOTOROLA

6

 

 

 

 

 

 

 

 

 

 

Typical Characteristics

 

 

 

 

 

 

 

 

 

 

 

10000

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

18

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Cies

 

 

 

(A)

16

 

 

 

 

 

 

 

 

 

 

CAPACITANCE (pF)

1000

 

 

 

 

 

 

 

 

 

 

FORWARD CURRENT

14

 

 

TJ = 125°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

12

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

Coes

 

 

 

8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6

 

 

 

 

25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

F

4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Cres

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

40

60

80

100

120

140

160

180

 

 

0

 

 

 

 

 

 

 

 

 

 

 

0

20

200

 

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

 

 

 

VCE, COLLECTOR±EMITTER VOLTAGE (V)

 

 

 

 

 

 

VF, FORWARD VOLTAGE (V)

 

 

 

Figure 14. Output Inverter Capacitance versus

Figure 15. Input Bridge Forward Current IF

Collector Voltage VCE

versus Forward Voltage VF

 

50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(A)

1000

 

 

 

 

 

45

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

rr

 

 

 

TJ = 125°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

(ns)

 

 

 

 

40

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RECOVERYREVERSEPEAK CURRENT

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

±di/dt = 100 A/μs

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RECOVERYREVERSETIME t

 

 

 

(A)

 

 

 

 

 

 

 

 

 

= 125°C

 

 

 

 

 

 

 

rr

trr

 

 

 

CURRENT

35

 

 

 

 

 

 

T

 

 

 

 

 

 

 

 

 

 

°

 

 

 

 

 

 

 

 

 

 

J

 

 

 

 

 

 

 

 

 

 

100

 

 

25 C

 

 

30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

FORWARD

25

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

Irr

 

25°C

 

15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TJ = 125°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

,

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

F

10

 

 

 

 

 

 

 

 

 

 

25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

 

0

5

10

15

20

 

 

 

 

 

 

VF, FORWARD VOLTAGE (V)

 

 

 

 

 

 

 

IF, FORWARD CURRENT (A)

 

 

Figure 16. Output Inverter Forward Current IF

Figure 17. Output Inverter Reverse Recovery

versus Forward Voltage VF

trr, Irr versus Forward Current IF

IC, COLLECTOR CURRENT (A)

100

 

 

 

 

 

 

 

RESISTANCE

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IGBT

 

 

 

 

 

 

 

 

 

TRANSIENTTHERMAL

 

 

 

DIODE

 

10

 

 

 

 

 

 

 

(NORMALIZED)

0.1

 

 

 

1

 

 

 

 

 

 

 

0.01

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

+VGE = 15 V

 

 

 

 

 

 

EFFECTIVE

 

 

 

 

 

 

TJ = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

±VGE = 0 V

 

 

 

 

 

 

 

 

 

 

 

 

 

RG = 150 Ω

 

 

 

 

 

 

 

 

 

 

 

 

0.1

 

 

600

800

 

1200

 

r(t),

 

0.001

 

 

 

0

200

400

1000

1400

 

0

10

100

1000

 

VCE, COLLECTOR±EMITTER VOLTAGE (V)

 

 

 

 

 

 

t, TIME (ms)

 

Figure 18. Output Inverter Reversed Biased Safe

Figure 19. Transient Thermal Resistance

Operating Area

MOTOROLA

MHPM7B12A120A

 

7

PACKAGE DIMENSIONS

E

V

C K

 

 

AB

 

AE

 

 

AA

 

 

 

 

 

 

 

 

 

 

AC

 

 

AF

 

9 PL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AD

 

3 PL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

A

 

 

 

 

 

DETAIL Z

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Q

 

 

 

 

 

 

 

 

N

G

 

AH

 

 

 

 

2 PL

 

 

 

 

 

W

 

1

 

2 PL

 

17

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2 PL

 

 

 

 

 

 

 

 

 

 

 

 

 

 

T

 

L

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

M

 

 

 

 

 

 

 

 

S

R

B

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NOTES:

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1. DIMENSIONING AND TOLERANCING PER ANSI

 

 

 

 

 

 

 

 

 

 

 

Y14.5M, 1982.

 

 

 

 

 

25

 

 

 

 

18

 

 

 

2.

CONTROLLING DIMENSION: MILLIMETER.

Y

 

 

 

 

 

 

 

X

3. LEAD LOCATION DIMENSIONS (ie: M, B. AA...)

 

 

 

AG

 

 

 

 

ARE TO THE CENTER OF THE LEAD.

4 PL

 

 

 

 

 

 

 

4 PL

 

 

 

 

 

 

 

 

 

 

P

 

 

 

 

 

 

 

 

MILLIMETERS

INCHES

 

 

 

 

U

 

 

 

 

 

 

DIM

MIN

MAX

MIN

MAX

 

 

 

 

 

 

 

 

 

 

A

97.54

98.55

3.840

3.880

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

52.45

53.47

2.065

2.105

 

 

 

 

 

 

 

 

 

 

 

 

C

14.60

15.88

0.575

0.625

 

 

 

 

 

 

 

 

 

 

 

 

D

0.43

0.84

0.017

0.033

 

 

 

 

 

 

J

 

 

 

 

 

E

10.80

12.06

0.425

0.475

 

 

H

 

 

 

 

 

 

 

 

F

0.94

1.35

0.037

0.053

 

 

 

 

 

25 PL

 

 

 

 

 

 

7 PL

 

 

 

 

 

 

 

G

1.60

2.21

0.063

0.087

 

 

 

 

 

 

 

 

 

 

 

H

8.58

9.19

0.338

0.362

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

J

0.30

0.71

0.012

0.028

 

 

 

 

 

 

 

 

 

 

 

 

K

18.80

20.57

0.74

0.81

 

 

 

 

 

 

 

 

 

 

 

 

L

19.30

20.32

0.760

0.800

 

 

 

 

 

 

 

 

 

 

 

 

M

38.99

40.26

1.535

1.585

 

 

 

 

 

 

 

 

 

 

 

 

N

9.78

11.05

0.385

0.435

 

 

 

 

 

 

 

 

 

 

 

 

P

82.55

83.57

3.250

3.290

 

 

 

 

 

 

 

 

 

 

 

 

Q

4.01

4.62

0.158

0.182

 

 

 

 

 

 

 

 

 

 

 

 

R

26.42

27.43

1.040

1.080

 

 

 

 

 

 

 

 

 

 

 

 

S

12.06

12.95

0.475

0.515

 

 

 

 

D

 

 

 

 

 

 

 

T

4.32

5.33

0.170

0.210

 

 

 

 

 

 

 

 

 

 

 

 

U

86.36

87.38

3.400

3.440

 

 

 

F

 

 

 

 

 

 

 

 

V

14.22

15.24

0.560

0.600

 

 

 

 

 

 

 

 

 

 

 

W

7.62

8.13

0.300

0.320

 

 

 

 

 

 

 

 

 

 

 

 

X

6.55

7.16

0.258

0.282

 

 

 

 

 

 

 

 

 

 

 

 

Y

2.49

3.10

0.098

0.122

 

 

 

 

DETAIL Z

 

 

 

 

 

 

AA

2.24

2.84

0.088

0.112

 

 

 

 

 

 

 

 

 

 

AB

7.32

7.92

0.288

0.312

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

AC

4.78

5.38

0.188

0.212

 

 

 

 

 

 

 

 

 

 

 

 

AD

8.58

9.19

0.338

0.362

 

 

 

 

 

 

 

 

 

 

 

 

AE

6.05

6.65

0.238

0.262

STYLE 1:

 

 

 

 

 

 

 

 

 

 

 

AF

4.78

5.38

0.188

0.212

PIN 1.

P1

PIN 6.

N2

PIN 11.

G3

PIN 16.

G2

PIN 21.

B

 

 

AG

69.34

70.36

2.730

2.770

2.

7.

P2

12.

K5

17.

G4

22.

T

 

 

AH

±±±

5.08

±±±

0.200

3. T+

8.

K1

13.

G5

18.

W

23.

S

 

 

 

 

 

 

 

4.

I+

9.

G1

14.

G6

19.

V

24.

R

 

 

 

 

 

 

 

5.

10.

K3

15.

G7

20.

U

25.

N1

 

 

 

 

 

 

 

CASE 440-01

ISSUE O

MHPM7B12A120A

MOTOROLA

8

 

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

MOTOROLA

MHPM7B12A120A

 

9

How to reach us:

 

 

USA/EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447

6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315

MFAX: RMFAX0@email.sps.mot.com ±TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

INTERNET: http://Design±NET.com

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

 

 

 

CODELINE TO BE PLACED HERE

MHPM7B12A120A/D

 

 

MOTOROLA

*MHPM7B12A120A/D*

Соседние файлы в папке IGBT