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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MHPM7B16A120B/D

Hybrid Power Module

Integrated Power Stage for 3.0 hp Motor Drives

This module integrates a 3±phase input rectifier bridge, 3±phase output inverter and brake transistor/diode in a single convenient package. The output inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free±wheeling diodes to give optimal dynamic performance. It has been configured for use as a three±phase motor drive module or for many other power switching applications. The top connector pins have been designed for easy interfacing to the user's control board.

•Short Circuit Rated 10 μs @ 25°C

•Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)

•Convenient Package Outline

•UL Recognized and Designed to Meet VDE

•Access to Positive and Negative DC Bus

MHPM7B16A120B

Motorola Preferred Device

16 AMP, 1200 VOLT

HYBRID POWER MODULE

PLASTIC PACKAGE
CASE 440A±01, Style	1

MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)

Rating	Symbol	Value	Unit

INPUT RECTIFIER BRIDGE

Repetitive Peak Reverse Voltage	VRRM	1200	V
Average Output Rectified Current (1)	IO	16	A
Peak Non-repetitive Surge Current	IFSM	330	A
OUTPUT INVERTER

IGBT Reverse Voltage	VCES	1200	V
Gate-Emitter Voltage	VGES	± 20	V
Continuous IGBT Collector Current	IC	16	A
Peak IGBT Collector Current ± (PW = 1.0 ms) (2)	IC(pk)	32	A
Continuous Free-Wheeling Diode Current	IF	16	A
Peak Free-Wheeling Diode Current ± (PW = 1.0 ms) (2)	IF(pk)	32	A
IGBT Power Dissipation	PD	75	W
Free-Wheeling Diode Power Dissipation	PD	40	W
IGBT Junction Temperature Range	TJ	± 40 to +125	°C
Free-Wheeling Diode Junction Temperature Range	TJ	± 40 to +125	°C

(1) 1 cycle = 50 or 60 Hz

(2) 1 ms = 1.0% duty cycle

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1995

MOTOROLA

MAXIMUM DEVICE RATINGS (continued) (TJ = 25°C unless otherwise noted)

Rating	Symbol	Value	Unit

BRAKE CIRCUIT

IGBT Reverse Voltage	VCES	1200	V
Gate-Emitter Voltage	VGES	± 20	V
Continuous IGBT Collector Current	IC	16	A
Peak IGBT Collector Current (PW = 1.0 ms) (2)	IC(pk)	32	A
IGBT Power Dissipation	PD	75	W

Diode Reverse Voltage	VRRM	1200	V
Continuous Output Diode Current	IF	16	A
Peak Output Diode Current (PW = 1.0 ms) (2)	IF(pk)	32	A
TOTAL MODULE

Isolation Voltage ± (47±63 Hz, 1.0 Minute Duration)	VISO	2500	VAC
Ambient Operating Temperature Range	TA	± 40 to + 85	°C
Operating Case Temperature Range	TC	± 40 to + 90	°C
Storage Temperature Range	Tstg	± 40 to +150	°C
Mounting Torque	±	6.0	lb±in

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

INPUT RECTIFIER BRIDGE

Reverse Leakage Current (VRRM = 1200 V)	IR	±	10	50	μA
Forward Voltage (IF = 16 A)	VF	±	1.05	1.5	V
Thermal Resistance (Each Die)	RθJC	±	±	2.7	°C/W
OUTPUT INVERTER

Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)	IGES	±	±	± 20	μA
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)	ICES
TJ = 25°C		±	±	100	μA
TJ = 125°C		±	±	2.0	mA
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 10 mA)	VGE(th)	4.0	6.0	8.0	V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)	V(BR)CES	1200	1300	±	V
Collector-Emitter Saturation Voltage (IC = 16 A, VGE = 15 V)	VCE(SAT)	±	2.4	3.5	V
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)	Cies	±	2700	±	pF
Input Gate Charge (VCE = 600 V, IC = 16 A, VGE = 15 V)	QT	±	100	±	nC
Fall Time ± Inductive Load	tfi
(VCE = 600 V, IC = 16 A, VGE = 15 V, RG = 150 Ω)		±	350	500	ns
Turn-On Energy	E(on)	±	±	2.5	mJ
(VCE = 600 V, IC = 16 A, VGE = 15 V, RG = 150 Ω)
Turn-Off Energy	E(off)	±	±	2.5	mJ
(VCE = 600 V, IC = 16 A, VGE = 15 V, RG = 150 Ω)
Diode Forward Voltage (IF = 16 A, VGE = 0 V)	VF	±	1.7	2.2	V
Diode Reverse Recovery Time	trr
(IF = 16 A, V = 600 V, dI/dt = 100 A/μs)		±	170	200	ns
Diode Stored Charge (IF = 16 A, V = 400 V, di/dt = 100 A/μs)	Qrr	±	850	1000	nC
Thermal Resistance ± IGBT (Each Die)	RθJC	±	±	1.4	°C/W
Thermal Resistance ± Free-Wheeling Diode (Each Die)	RθJC	±	±	2.7	°C/W
(2) 1.0 ms = 1.0% duty cycle

MHPM7B16A120B	MOTOROLA
2

ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

BRAKE CIRCUIT

Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)	IGES	±	±	± 20	μA
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)	ICES
TJ = 25°C		±	±	100	μA
TJ = 125°C		±	±	2.0	mA
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 10 mA)	VGE(th)	4.0	6.0	8.0	V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)	V(BR)CES	1200	1300	±	V
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 16 A)	VCE(SAT)	±	2.4	3.5	V
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)	Cies	±	2700	±	pF
Input Gate Charge (VCE = 600 V, IC = 16 A, VGE = 15 V)	QT	±	100	±	nC
Fall Time ± Inductive Load	tfi
(VCE = 600 V, IC = 16 A, VGE = 15 V, RG = 150 Ω)		±	350	500	ns
Turn-On Energy	E(on)
(VCE = 600 V, IC = 16 A, VGE = 15 V, RG = 150 Ω)		±	±	2.5	mJ
Turn-Off Energy	E(off)
(VCE = 600 V, IC = 16 A, VGE = 15 V, RG = 150 Ω)		±	±	2.5	mJ
Diode Forward Voltage (IF = 16 A)	VF	±	1.7	2.2	V
Diode Reverse Leakage Current (VR = 1200 V)	IR	±	±	50	μA
Thermal Resistance ± IGBT	RθJC	±	±	1.4	°C/W
Thermal Resistance ± Diode	RθJC	±	±	2.7	°C/W

MOTOROLA	MHPM7B16A120B
	3

4	MHPM7B16A120B

Schematic Stage Power Integrated .1 Figure

MOTOROLA

			1	7
			P1	P2
					Q1		Q3		Q5
			9		D1	11	D3	13	D5
						11		13

			G1			G3		G5
			E1			E3		E5
			8			10		12
									U	20
24	R								V	19
			B						V	19
			B
23	S		21						W	18
22	T		Q7		Q2		Q4		Q6
22	T				Q2		Q4		Q6
		15	16		D2	17	D4	14	D6
					D2		D4		D6
		G7	G2			G4		G6
	N1	N2
	25	6
				NC	2				DEVICE INTEGRATION
				NC	2

NC	3	These pins are physical

= PIN NUMBER IDENTIFICATION		terminations but not	3±Phase	Brake	3±Phase

NC	4	connected internally.	Input		Output
				IGBT/
			Rectifier		IGBT/Diode
				Diode
NC	5		Bridge		Bridge

					Typical Characteristics
	50	TJ = 25°C		VGE = 18 V	15 V			50	TJ = 125°C		VGE = 18 V	15 V
	45	TJ = 25°C		VGE = 18 V	15 V		12 V	45	TJ = 125°C		VGE = 18 V	15 V
	45						12 V	45
(A)	40						(A)	40					12 V
CURRENT	35						CURRENT	35
	30							30

, COLLECTOR	25						, COLLECTOR	25
	20							20
	15					9 V		15					9 V
	10					9 V		10
C							C
I							I
	5							5
	0							0
	0	1	2	3	4		5	0	1	2	3	4	5
		VCE, COLLECTOR±EMITTER VOLTAGE (V)							VCE, COLLECTOR±EMITTER VOLTAGE (V)

Figure 2. Output Inverter Collector Current IC	Figure 3. Output Inverter Collector Current IC
versus Collector±Emitter Voltage VCE	versus Collector±Emitter Voltage VCE

(V)	10		IC = 8 A			TJ = 25°C		1000
(V)			IC = 8 A			TJ = 25°C		V	CE	= 600 V
COLLECTOR±EMITTERVOLTAGE									CE
	8							VGE = 15 V
	8	16 A						RG = 10 Ω
		16 A					TIMESWITCHING(ns)	TJ = 25°C								t(off)
								TJ = 25°C
	2		32 A
	2
	6
	6
	4															tf
	4
																td
,
CE
V
	0	10	12	14	16	18		100		4	6	8	10	12	14	16	18
	8	10	12	14	16	18		2		4	6	8	10	12	14	16	18
			VGE, GATE±EMITTER VOLTAGE (V)									IC, COLLECTOR CURRENT (A)

SWITCHING TIME (ns)

Figure 4. Inverter Collector±Emitter Voltage VCE											Figure 5. Inverter Switching Time td, tf, t(off)
	versus Gate±Emitter Voltage VGE										versus Collector Current IC
10000	VCE = 600 V									10000	VCE = 600 V
	VCE = 600 V										VCE = 600 V
	VGE = 15 V										VGE = 15 V	t(off)
	RG = 10 Ω						t(off)				IC = 16 A	t(off)
	TJ = 125°C								TIME (ns)		TJ = 25°C	td
									TIME (ns)
1000									SWITCHING	1000
1000										1000
							tf
							td					tf
100						14	16			100
2	4	6	8	10	12	14	16	18		10	100	1000
			IC, COLLECTOR CURRENT (A)								RG, GATE RESISTANCE (Ω)

Figure 6. Inverter Switching Time td, tf, t(off)

versus Collector Current IC

Figure 7. Inverter Switching Time td, tf, t(off)

versus Gate Resistance RG

MOTOROLA	MHPM7B16A120B
	5

Typical Characteristics

	10000					80
	VCE = 600 V					70	VCE = 600 V
	VGE = 15 V			t(off)		70	VGE = 15 V
	I	C	= 16 A	t(off)		60	R	G	= 10	Ω
		C	°	t				G
			°	t
(ns)	TJ = 125 C			d	(ns)
(ns)					(ns)							TJ = 125°C
TIME					TIME	50						TJ = 125°C
SWITCHING	1000				SWITCHING	40							25°C
				tf		30							25°C
				tf

						20
						20
						10
	100					0							12	14	16
	10		100	1000		2			4	6	8	10	12	14	16	18
			RG, GATE RESISTANCE (Ω)								IC, COLLECTOR CURRENT (A)

Figure 8. Inverter Switching Time td, tf, t(off)				Figure 9. Inverter Switching Time tr versus
		versus Gate Resistance RG						Collector Current IC
1000				10000
VCE = 600 V				V	CE	= 600 V
V	GE	= 15 V		V	CE	= 15 V				°
V		= 15 V		V	GE	= 15 V				°
					GE					TJ = 125 C
IC = 16 A			J)	RG = 10			Ω
TIMESWITCHING(ns)			ENERGYSWITCHING(μ	1000
				1000
100	TJ = 125°C									25°C
100
	25°C			100
				100
10				10	2						12	14	16
10		100	1000	0	2		4	6	8	10	12	14	16	18
		RG, GATE RESISTANCE (Ω)						IC, COLLECTOR CURRENT (A)
Figure 10. Inverter Switching Time tr versus				Figure 11. Inverter Switching Energy E(off)
		Gate Resistance RG					versus Collector Current IC

10000
	VCE = 600 V
	VGE = 15 V
J)	IC = 16 A
(μ	TJ = 125°C
ENERGY
SWITCHING	25°C
SWITCHING
1000
10	100	1000
	RG, GATE RESISTANCE (Ω)

(V)	900										18
(V)	800										16
VOLTAGE	800							500 V			16	VOLTAGE (V)
	700							500 V
	700										14
	600							400 V		600 V	12

COLLECTOR±EMITTER	500										10	,GATE±EMITTER
	400										8
	300										6
	200										4
	200										4	GE
												GE
,												V
CE	100										2	V
V
	0	10	20		40	50	60	70	80	90	0
	0	10	20	30	40	50	60	70	80	90	100
				QG, GATE CHARGE (nC)

Figure 12. Inverter Switching Energy E(off)	Figure 13. Gate±to±Emitter Voltage versus
versus Gate Resistance RG	Gate Charge

MHPM7B16A120B	MOTOROLA
6

									Typical Characteristics
	10000												50
								Cies					45
								Cies				(A)	40
													40

CAPACITANCE (pF)	1000											FORWARD CURRENT	35
	1000
													30
													25
	100							Coes					20			TJ = 125°C
	100												15						25°C
													15						25°C
												,
												F	10
								Cres				I

													5
													5
	10												0
	0	20	40	60	80	100	120	140	160	180	200		0	0.2	0.4	0.6	0.8	1	1.2	1.4	1.6	1.8	2
			VCE, COLLECTOR±EMITTER VOLTAGE (V)													VF, FORWARD VOLTAGE (V)

Figure 14. Output Inverter Capacitance versus	Figure 15. Input Bridge Forward Current IF
Collector Voltage VCE	versus Forward Voltage VF

	50																(A)	1000
	45																rr
	45																I	(ns)
I	40																RECOVERYREVERSEPEAK CURRENT	(ns)			TJ = 125°C
I	40																RECOVERYREVERSEPEAK CURRENT	RECOVERYREVERSETIME t			±di/dt = 100 A/μs
(A)																		rr	trr		25°C
CURRENT	35																	100
	30						TJ = 125°C
FORWARD	25																	10	Irr		25°C
FORWARD	15																	10	Irr		25°C
	20										25°C										TJ = 125°C
,
F	10
	10
	5
	0																	1
	0	0.2	0.4	0.6	0.8	1	1.2	1.4	1.6	1.8	2	2.2	2.4	2.6	2.8	3		0	5	10	15	20
						VF, FORWARD VOLTAGE (V)														IF, FORWARD CURRENT (A)

Figure 16. Output Inverter Forward Current IF	Figure 17. Output Inverter Reverse Recovery
versus Forward Voltage VF	trr, Irr versus Forward Current IF

IC, COLLECTOR CURRENT (A)

100								RESISTANCE		1	DIODE
100										1
10								TRANSIENTTHERMAL	(NORMALIZED)	0.1	IGBT
1								TRANSIENTTHERMAL	(NORMALIZED)	0.01
1										0.01
	+VGE = 15 V							EFFECTIVE
	TJ = 25°C							EFFECTIVE
	±VGE = 0 V
	RG = 150 Ω
0.1		400	600	800		1200	1400	r(t),		0.001
0	200	400	600	800	1000	1200	1400	r(t),		1	10	100	1000
	VCE, COLLECTOR±EMITTER VOLTAGE (V)										t, TIME (ms)

Figure 18. Output Inverter Reversed Biased Safe

Figure 19. Transient Thermal Resistance

Operating Area

MOTOROLA	MHPM7B16A120B
	7

PACKAGE DIMENSIONS

E								C
								C		K
										K
		AB		AE				AA
		AC				AF		9 PL
		AC				AF
				AD		3 PL
				AD
				A
	N			AH						Q					V
		G		2 PL						Q
				2 PL						2 PL
							17			2 PL
W		1					17
W
2 PL
L
M									S	R	B
											DETAIL Z
Y		25					18
4 PL		25					18			X
4 PL				AG											T

										4 PL
				P							NOTES:
				U							NOTES:
				U							1. DIMENSIONING AND TOLERANCING PER ANSI
											Y14.5M, 1982.
											2.	CONTROLLING DIMENSION: MILLIMETER.
						J					3.	LEAD LOCATION DIMENSIONS (ie: M, G, AA...)
	H					J					ARE TO THE CENTER OF THE LEAD.
	H					25 PL
	7 PL					25 PL							MILLIMETERS		INCHES
	7 PL												MILLIMETERS		INCHES
												DIM	MIN	MAX	MIN	MAX
												A	97.54	98.55	3.840	3.880
												B	62.74	63.75	2.470	2.510
												C	14.60	15.88	0.575	0.625
												D	0.56	0.97	0.022	0.038
												E	10.80	12.06	0.425	0.475
												F	0.81	1.22	0.032	0.048
												G	1.60	2.21	0.063	0.087
												H	8.58	9.19	0.338	0.362
												J	0.56	0.97	0.022	0.038
												K	18.80	20.57	0.740	0.810
												L	22.86	23.88	0.900	0.940
												M	46.23	47.24	1.820	1.860
				D								N	9.78	11.05	0.385	0.435
				D								P	82.55	83.57	3.250	3.290
												P	82.55	83.57	3.250	3.290
		F										Q	4.01	4.62	0.158	0.182
		F										R	26.42	27.43	1.040	1.080
												S	12.06	12.95	0.475	0.515
												T	4.32	5.33	0.170	0.210
				DETAIL Z								U	86.36	87.38	3.400	3.440
				DETAIL Z								V	14.22	15.24	0.560	0.600
												W	7.62	8.13	0.300	0.320
STYLE 1:												X	6.55	7.16	0.258	0.282
STYLE 1:												Y	2.49	3.10	0.098	0.122
PIN 1. P1		PIN 6.	N2	PIN 11.	G3	PIN 16.	G2	PIN 21.	B			Y	2.49	3.10	0.098	0.122
PIN 1. P1		PIN 6.	N2	PIN 11.	G3	PIN 16.	G2	PIN 21.	B			AA	2.24	2.84	0.088	0.112
2.	T±	7.	P2	12.	K5	17.	G4	22.	T			AA	2.24	2.84	0.088	0.112
2.	T±	7.	P2	12.	K5	17.	G4	22.	T			AB	7.32	7.92	0.288	0.312
3. T+		8.	K1	13.	G5	18.	W	23.	S			AB	7.32	7.92	0.288	0.312
3. T+		8.	K1	13.	G5	18.	W	23.	S			AC	4.78	5.38	0.188	0.212
4.	I+	9.	G1	14.	G6	19.	V	24.	R			AC	4.78	5.38	0.188	0.212
4.	I+	9.	G1	14.	G6	19.	V	24.	R			AD	8.58	9.19	0.338	0.362
5.	I±	10.	K3	15.	G7	20.	U	25.	N1			AD	8.58	9.19	0.338	0.362
												AE	6.05	6.65	0.238	0.262
												AF	4.78	5.38	0.188	0.212
												AG	69.34	70.36	2.730	2.770
						CASE 440A±01						AH	±±±	5.08	±±±	0.200
						CASE 440A±01
						ISSUE O

MHPM7B16A120B	MOTOROLA
8

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

MOTOROLA	MHPM7B16A120B
	9

How to reach us:
USA/EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ±TOUCHTONE (602) 244±6609 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊ CODELINE TO BE PLACED HERE		MHPM7B16A120B/D
		MOTOROLA

*MHPM7B16A120B/D*

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