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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MHPM7B20A60A/D

Hybrid Power Module

Integrated Power Stage for 2.0 hp Motor Drives

This module integrates a 3±phase input rectifier bridge, 3±phase output inverter and brake transistor/diode in a single convenient package. The output inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free±wheeling diodes to give optimal dynamic performance. It has been configured for use as a three±phase motor drive module or for many other power switching applications. The top connector pins have been designed for easy interfacing to the user's control board.

•Short Circuit Rated 10 μs @ 25°C

•Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)

•Convenient Package Outline

•UL Recognized and Designed to Meet VDE

•Access to Positive and Negative DC Bus

MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)

MHPM7B20A60A

Motorola Preferred Device

20 AMP, 600 VOLT

HYBRID POWER MODULE

PLASTIC PACKAGE

CASE 440-01, Style 1

Rating	Symbol	Value	Unit

INPUT RECTIFIER BRIDGE

Repetitive Peak Reverse Voltage	VRRM	600	V
Average Output Rectified Current (1)	IO	20	A
Peak Non-repetitive Surge Current	IFSM	240	A
OUTPUT INVERTER

IGBT Reverse Voltage	VCES	600	V
Gate-Emitter Voltage	VGES	± 20	V
Continuous IGBT Collector Current	IC	20	A
Peak IGBT Collector Current ± (PW = 1.0 ms) (2)	IC(pk)	40	A
Continuous Free-Wheeling Diode Current	IF	20	A
Peak Free-Wheeling Diode Current ± (PW = 1.0 ms) (2)	IF(pk)	40	A
IGBT Power Dissipation	PD	78	W
Free-Wheeling Diode Power Dissipation	PD	39	W
IGBT Junction Temperature Range	TJ	± 40 to +125	°C
Free-Wheeling Diode Junction Temperature Range	TJ	± 40 to +125	°C

(1) 1 cycle = 50 or 60 Hz

(2) 1 ms = 1.0% duty cycle

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1995

MOTOROLA

MAXIMUM DEVICE RATINGS (continued) (TJ = 25°C unless otherwise noted)

Rating	Symbol	Value	Unit

BRAKE CIRCUIT

IGBT Reverse Voltage	VCES	600	V
Gate-Emitter Voltage	VGES	± 20	V
Continuous IGBT Collector Current	IC	20	A
Peak IGBT Collector Current (PW = 1.0 ms) (2)	IC(pk)	40	A
IGBT Power Dissipation	PD	78	W

Diode Reverse Voltage	VRRM	600	V
Continuous Output Diode Current	IF	20	A
Peak Output Diode Current (PW = 1.0 ms) (2)	IF(pk)	40	A
TOTAL MODULE

Isolation Voltage ± (47±63 Hz, 1.0 Minute Duration)	VISO	2500	VAC
Ambient Operating Temperature Range	TA	± 40 to + 85	°C
Operating Case Temperature Range	TC	± 40 to + 90	°C
Storage Temperature Range	Tstg	± 40 to +150	°C
Mounting Torque	±	6.0	lb±in

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

INPUT RECTIFIER BRIDGE

Reverse Leakage Current (VRRM = 600 V)	IR	±	10	50	μA
Forward Voltage (IF = 20 A)	VF	±	1.1	1.5	V
Thermal Resistance (Each Die)	RθJC	±	±	2.9	°C/W
OUTPUT INVERTER

Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)	IGES	±	±	± 20	μA
Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V)	ICES
TJ = 25°C		±	±	200	μA
TJ = 125°C		±	±	1.0	mA
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)	VGE(th)	4.0	6.0	8.0	V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)	V(BR)CES	600	700	±	V
Collector-Emitter Saturation Voltage (IC = 20 A, VGE = 15 V)	VCE(SAT)	±	2.5	3.5	V
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)	Cies	±	4400	±	pF
Input Gate Charge (VCE = 300 V, IC = 20 A, VGE = 15 V)	QT	±	145	±	nC
Fall Time ± Inductive Load	tfi
(VCE = 300 V, IC = 20 A, VGE = 15 V, RG = 150 Ω)		±	250	500	ns
Turn-On Energy	E(on)	±	±	2.5	mJ
(VCE = 300 V, IC = 20 A, VGE = 15 V, RG = 150 Ω)
Turn-Off Energy	E(off)	±	±	2.5	mJ
(VCE = 300 V, IC = 20 A, VGE = 15 V, RG = 150 Ω)
Diode Forward Voltage (IF = 20 A, VGE = 0 V)	VF	±	1.3	2.0	V
Diode Reverse Recovery Time	trr
(IF = 20 A, V = 300 V, dI/dt = 50 A/μs)		±	170	200	ns
Diode Stored Charge (IF = 20 A, V = 300 V, di/dt = 50 A/μs)	Qrr	±	450	600	nC
Thermal Resistance ± IGBT (Each Die)	RθJC	±	±	1.5	°C/W
Thermal Resistance ± Free-Wheeling Diode (Each Die)	RθJC	±	±	2.9	°C/W
(2) 1.0 ms = 1.0% duty cycle

MHPM7B20A60A	MOTOROLA
2

ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

BRAKE CIRCUIT

Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)	IGES	±	±	± 20	μA
Collector-Emitter Leakage Current (VCE = 600 V, VGE = 0 V)	ICES
TJ = 25°C		±	±	100	μA
TJ = 125°C		±	±	2.0	mA
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)	VGE(th)	4.0	6.0	8.0	V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)	V(BR)CES	600	700	±	V
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 20 A)	VCE(SAT)	±	2.5	3.5	V
Input Capacitance (VGE = 0 V, VCE = 25 V, f = 1.0 MHz)	Cies	±	4400	±	pF
Input Gate Charge (VCE = 300 V, IC = 20 A, VGE = 15 V)	QT	±	145	±	nC
Fall Time ± Inductive Load	tfi
(VCE = 300 V, IC = 20 A, VGE = 15 V, RG = 150 Ω)		±	250	500	ns
Turn-On Energy	E(on)
(VCE = 300 V, IC = 20 A, VGE = 15 V, RG = 150 Ω)		±	±	2.5	mJ
Turn-Off Energy	E(off)
(VCE = 300 V, IC = 20 A, VGE = 15 V, RG = 150 Ω)		±	±	2.5	mJ
Diode Forward Voltage (IF = 20 A)	VF	±	1.3	2.0	V
Diode Reverse Leakage Current	IR	±	±	50	μA
Thermal Resistance ± IGBT	RθJC	±	±	1.5	°C/W
Thermal Resistance ± Diode	RθJC	±	±	2.9	°C/W

MOTOROLA	MHPM7B20A60A
	3

4	MHPM7B20A60A

Schematic Stage Power Integrated .1 Figure

MOTOROLA

			1	7
			P1	P2
					Q1		Q3		Q5
			9		D1	11	D3	13	D5
						11		13

			G1			G3		G5
			E1			E3		E5
			8			10		12
									U	20
24	R								V	19
			B						V	19
			B
23	S		21						W	18
22	T		Q7		Q2		Q4		Q6
22	T				Q2		Q4		Q6
		15	16		D2	17	D4	14	D6
					D2		D4		D6
		G7	G2			G4		G6
	N1	N2
	25	6
				NC	2				DEVICE INTEGRATION
				NC	2

NC	3	These pins are physical

= PIN NUMBER IDENTIFICATION		terminations but not	3±Phase	Brake	3±Phase

NC	4	connected internally.	Input		Output
				IGBT/
			Rectifier		IGBT/Diode
				Diode
NC	5		Bridge		Bridge

Typical Characteristics

I F , FORWARD CURRENT (A)

TJ = 125°C

25°C

0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VF, FORWARD VOLTAGE (V)

Figure 2. Input Bridge Forward Current IF versus Forward Voltage VF

I F , FORWARD CURRENT (A)

50
50
45
45
40
40
35
35
30
30					TJ =		125°C				25°C
25					TJ =		125°C				25°C
25
20
20
15
15
10
10
5
5
0
0	0.2	0.4	0.6	0.8		1.0		1.2	1.4	1.6		1.8	2.0
0	0.2	0.4	0.6	0.8		1.0		1.2	1.4	1.6		1.8	2.0

VF, FORWARD VOLTAGE (V)

Figure 3. Output Inverter Forward Current IF versus Forward Voltage VF

(A)	1000
rr
I	(ns)
REVERSEPEAKRECOVERY CURRENT	(ns)						TJ =	125°C
	rr	trr
	100						25°C


	REVERSERECOVERYTIMEt






							TJ =	125°C
	10						TJ =	125°C
	10
		Irr
							25°C

	1				±di/dt	= 50 A/μs

		5	10	15	20		25
	0	5	10	15	20		25

IF, FORWARD CURRENT (A)

Figure 4. Output Inverter Reverse Recovery trr, Irr versus Forward Current IF

I C , COLLECTOR CURRENT (A)

50
50	TJ =	25°C		VGE = 18	V	12		V
45	TJ =	25°C		VGE = 18	V	12		V
45							15 V
40



35
35
30
30
25
25
20
20									9 V
15									9 V
15
10
10
5
5
0
0	1		2	3		4			5
0	1		2	3		4			5

VCE, COLLECTOR±EMITTER VOLTAGE (V)

Figure 5. Output Inverter Collector Currrent IC versus Collector±Emitter Voltage VCE

IC, COLLECTOR CURRENT (A)

50											10
	TJ =	°			VGE = 18	V	12V					I =	10 A			40 A			T	J	=	25°C
45	TJ =	125 C			VGE = 18	V	12V			(V)		C				40 A				J
45							15 V			VOLTAGE	8
40										VOLTAGE


												20	A
35										EMITTER	6



25
30										-
10										-	2
10										COLLECTOR	2
20											4
15								9 V
								9 V
										,
										,
5										CE
5										CE
										V
0											0
0			1	2	3		4		5		8			10	12		14	16			18
			VCE, COLLECTOR±EMITTER VOLTAGE (V)												VGE, GATE±EMITTER VOLTAGE (V)
	Figure 6. Ouput Inverter Collector Current IC											Figure 7. Inverter Collector±Emitter Voltage VCE
		versus Collector±Emitter Voltage VCE												versus Gate±Emitter Voltage VGE

MOTOROLA	MHPM7B20A60A
	5

								Typical Characteristics
(V)	450								18		1000	V		= 300 V		°
(V)												V	CE	= 300 V		°
VOLTAGEEMITTER-COLLECTOR	100							TJ = 25°C	4	V	J)(ENERGYSWITCHINGμ		CE			TJ =125 C
	400	400 V							16			VGE = 15 V
	350	400 V							14	(V)		RG = 10 Ω
	350						400 V		14	(V)		RG = 10 Ω
	250					300 V			10VOLTAGE
	300	300 V			200 V				12							25°C
		300 V			200 V

	200	200 V							8	GATE	100
		200 V								GATE

	150								6	,
	150								6	GE
										GE
,								IC = 20 A
CE	50								2
V	50								2
V
	0	20	40	60	80	100	120	140	0		10			5	10	15	20	25
	0	20	40	60	80	100	120	140	160		0			5	10	15	20	25
				QG, GATE CHARGE (nC)											IC, COLLECTOR CURRENT (A)

Figure 8. Gate±to-Emitter Voltage versus	Figure 9. Inverter Switching Energy E(off) versus
Gate Charge	Collector Current IC

10000
		VCE = 300 V
		VGE = 15 V
(μJ)		IC = 20 A
(μJ)	1000		TJ =125°C
ENERGY	1000		TJ =125°C
SWITCHING
SWITCHING	100		25°C
			25°C





		100		1000
	10	100		1000

RG, GATE RESISTANCE (Ω)

Figure 10. Inverter Switching Energy E(off) versus Gate Resistance RG

1000
1000




TIME (ns)						t(off)
TIME (ns)						td
SWITCHING
SWITCHING	VGE = 15	V
	VCE = 300	V
	RG = 10 Ω					tf
	TJ = 25°C
100
100	5		10	15	20	25
0	5		10	15	20	25

IC, COLLECTOR CURRENT (A)

Figure 11. Inverter Switching Time td, tf, t(off) versus Collector Current IC

1000						10000
				t(off)		VCE = 300 V
				t(off)		V	GE	= 15 V		t
							GE			(off)
						IC = 20 A				td
TIMESWITCHING(ns)	VCE = 300 V					TJ = 25°C				tf
TIMESWITCHING(ns)	VCE = 300 V			td		TIMESWITCHING(ns)				tf
				td
				tf		1000
	VGE = 15 V
	RG = 10 Ω
100	TJ = 125°C					100
100	5	10	15	20	25	100			100	1000
0	5	10	15	20	25	10			100	1000
		IC, COLLECTOR CURRENT (A)							RG, GATE RESISTANCE (Ω)

Figure 12. Inverter Switching Time td, tf, t(off)	Figure 13. Inverter Switching Time td,tf, t(off)
versus Collector Current IC	versus Gate Resistance RG

MHPM7B20A60A	MOTOROLA
6

Typical Characteristics

10000		VCE = 300 V
		VCE = 300 V	t(off)
		VGE = 15 V	t(off)
		IC = 20 A	t
		TJ = 125°C	d
TIME (ns)		TJ = 125°C
TIME (ns)			tf
SWITCHING	1000		tf
	1000
	100	100	1000
	10	100	1000

RG, GATE RESISTANCE (Ω)

Figure 14. Inverter Switching Time td, tf, t(off)

versus Gate Resistance RG

SWITCHING TIME (ns)

200

175

150

125

100

VCE = 300 V

VGE = 15 V

RG = 10 Ω

TJ =125°C

25°C

IC, COLLECTOR CURRENT (A)

Figure 15. Inverter Switching Time tr

versus Collector Current IC

10000		VCE = 300 V		10000
		VCE = 300 V									Cies
		VGE = 15 V									Cies
		IC = 20 A
SWITCHING TIME (ns)		25°C		CAPACITANCE (pF)
	1000				1000
		TJ =125°C									Coes
											Coes
	100				100

											Cres
	10	100	1000		10	20	40	60	80	100	120	140	160	180	200
	10	100	1000		0	20	40	60	80	100	120	140	160	180	200
		RG, GATE RESISTANCE (Ω)					VCE, COLLECTOR±EMITTER VOLTAGE (V)

Figure 16. Inverter Switching Time tr	Figure 17. Output Inverter Capacitance versus
versus Gate Resistance RG	Collector Voltage VCE

100

THERMALTRANSIENTEFFECTIVE

(NORMALIZED)RESISTANCE

1.0

(A)

CURRENT

0.1

COLLECTOR,

1.0

0.01

GE = 15

±V

GE = 0

r(t),

= 150

0.1

= 25°C

0.001

200

400

600

800

1000

VCE, COLLECTOR±EMITTER VOLTAGE (V)

Figure 18. Output Inverter Reversed Biased

Safe Operating Area

DIODE

IGBT

10	100	1000
	t, TIME (ms)

Figure 19. Transient Thermal Resistance

MOTOROLA	MHPM7B20A60A
	7

PACKAGE DIMENSIONS

E	C	V
	C	K
		K

		AB		AE				AA
		AC				AF		9 PL
		AC				AF
				AD		3 PL
				AD
											DETAIL Z
				A
										Q
	N		G		AH					2 PL
W		1	G		2 PL		17
W		1					17									T
2 PL																T
L
M									S	R	B
											NOTES:
											1. DIMENSIONING AND TOLERANCING PER ANSI
											Y14.5M, 1982.
Y		25					18			X	2.	CONTROLLING DIMENSION: MILLIMETER.
Y				AG						X	3.	LEAD LOCATION DIMENSIONS (ie: M, B. AA...)
4 PL				AG						4 PL	ARE TO THE CENTER OF THE LEAD.
4 PL				P						4 PL	ARE TO THE CENTER OF THE LEAD.
				P									MILLIMETERS		INCHES
				U									MILLIMETERS		INCHES
				U								DIM	MIN	MAX	MIN	MAX
												A	97.54	98.55	3.840	3.880
												B	52.45	53.47	2.065	2.105
												C	14.60	15.88	0.575	0.625
	H					J						D	0.43	0.84	0.017	0.033
						J						E	10.80	12.06	0.425	0.475
						25 PL						E	10.80	12.06	0.425	0.475
	7 PL					25 PL						F	0.94	1.35	0.037	0.053
	7 PL											F	0.94	1.35	0.037	0.053
												G	1.60	2.21	0.063	0.087
												H	8.58	9.19	0.338	0.362
												J	0.30	0.71	0.012	0.028
												K	18.80	20.57	0.74	0.81
												L	19.30	20.32	0.760	0.800
												M	38.99	40.26	1.535	1.585
												N	9.78	11.05	0.385	0.435
												P	82.55	83.57	3.250	3.290
												Q	4.01	4.62	0.158	0.182
				D								R	26.42	27.43	1.040	1.080
				D								S	12.06	12.95	0.475	0.515
												S	12.06	12.95	0.475	0.515
		F										T	4.32	5.33	0.170	0.210
		F										U	86.36	87.38	3.400	3.440
												V	14.22	15.24	0.560	0.600
												W	7.62	8.13	0.300	0.320
				DETAIL Z								X	6.55	7.16	0.258	0.282
				DETAIL Z								Y	2.49	3.10	0.098	0.122
												AA	2.24	2.84	0.088	0.112
												AB	7.32	7.92	0.288	0.312
STYLE 1:												AC	4.78	5.38	0.188	0.212
STYLE 1:												AD	8.58	9.19	0.338	0.362
PIN 1.	P1	PIN 6.	N2	PIN 11.	G3	PIN 16.	G2	PIN 21.	B			AD	8.58	9.19	0.338	0.362
2.	T±	7.	P2	12.	K5	17.	G4	22.	T			AE	6.05	6.65	0.238	0.262
3.	T+	8.	K1	13.	G5	18.	W	23.	S			AF	4.78	5.38	0.188	0.212
4.	I+	9.	G1	14.	G6	19.	V	24.	R			AG	69.34	70.36	2.730	2.770
5.	I±	10.	K3	15.	G7	20.	U	25.	N1			AH	±±±	5.08	±±±	0.200

CASE 440-01

ISSUE O

MHPM7B20A60A	MOTOROLA
8

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

MOTOROLA	MHPM7B20A60A
	9

How to reach us:
USA/EUROPE: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.; Tatsumi±SPD±JLDC, Toshikatsu Otsuki,
P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ±TOUCHTONE (602) 244±6609	HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊ CODELINE TO BE PLACED HERE		MHPM7B20A60 /D
		MOTOROLA

10	MHPM7B20A60A/D

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