MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MGW21N60ED/D
Preliminary Data Sheet
Insulated Gate Bipolar Transistor
N±Channel Enhancement±Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co±packaged with a soft recovery ultra±fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high voltage±blocking capability. Its new 600V IGBT technology is specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast switching characteristics and results in efficient operation at high
frequencies. Co±packaged IGBTs save space, reduce assembly time and cost. This new E±series introduces an energy efficient, ESD protected, and rugged short circuit device.
• Industry Standard TO±247 Package |
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• High Speed: Eoff = 65 mJ/A typical at 125°C |
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• High Voltage Short Circuit Capability ± 10 ms minimum at |
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125°C, 400 V |
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• Low On±Voltage Ð 2.1 V typical at 20 A, 125 °C |
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• Soft Recovery Free Wheeling Diode is included in the Package |
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• Robust High Voltage Termination |
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• ESD Protection Gate±Emitter Zener Diodes |
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MGW21N60ED
IGBT IN TO±247
21 A @ 90°C
31 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
ON±VOLTAGE
G |
C |
E |
CASE 340K±01, |
TO±247 AE |
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating |
Symbol |
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Value |
Unit |
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Collector±Emitter Voltage |
VCES |
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600 |
Vdc |
Collector±Gate Voltage (RGE = 1.0 MW) |
VCGR |
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600 |
Vdc |
Gate±Emitter Voltage Ð Continuous |
VGE |
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± 20 |
Vdc |
Collector Current Ð Continuous @ T C = 25°C |
IC25 |
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31 |
Adc |
Ð Continuous @ T C = 90°C |
IC90 |
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21 |
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Ð Repetitive Pulsed Current (1) |
ICM |
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42 |
Apk |
Total Power Dissipation @ TC = 25°C |
PD |
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142 |
Watts |
Derate above 25°C |
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1.14 |
W/°C |
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Operating and Storage Junction Temperature Range |
TJ, Tstg |
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± 55 to 150 |
°C |
Short Circuit Withstand Time |
tsc |
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10 |
ms |
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 W) |
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Thermal Resistance Ð Junction to Case ± IGBT |
RqJC |
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0.88 |
°C/W |
Ð Junction to Diode |
RqJC |
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1.4 |
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Ð Junction to Ambient |
RqJA |
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45 |
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Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds |
TL |
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260 |
°C |
Mounting Torque, 6±32 or M3 screw |
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10 lbfSin (1.13 NSm) |
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(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
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IGBT Device Data |
1 |
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Motorola,Inc. 1997 |
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MGW21N60ED
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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OFF CHARACTERISTICS |
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Collector±to±Emitter Breakdown Voltage |
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V(BR)CES |
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Vdc |
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(VGE = 0 Vdc, IC = 25 μAdc) |
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600 |
Ð |
Ð |
mV/°C |
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Temperature Coefficient (Positive) |
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Ð |
870 |
Ð |
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Emitter±to±Collector Breakdown Voltage (VGE = 0 Vdc, IEC = 100 mAdc) |
BVECS |
15 |
Ð |
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Vdc |
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Zero Gate Voltage Collector Current |
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ICES |
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μAdc |
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(VCE = 600 Vdc, VGE = 0 Vdc) |
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Ð |
Ð |
10 |
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(VCE = 600 Vdc, VGE = 0 Vdc, TJ = 125°C) |
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Ð |
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200 |
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Gate±Body Leakage Current (VGE = ± 20 Vdc, VCE = 0 Vdc) |
IGES |
Ð |
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50 |
μAdc |
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ON CHARACTERISTICS (1) |
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Collector±to±Emitter On±State Voltage |
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VCE(on) |
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Vdc |
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(VGE = 15 Vdc, IC = 10 Adc) |
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Ð |
1.7 |
2.1 |
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(VGE = 15 Vdc, IC = 10 Adc, TJ = 125°C) |
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1.5 |
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(VGE = 15 Vdc, IC = 20 Adc) |
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Ð |
2.2 |
2.5 |
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Gate Threshold Voltage |
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VGE(th) |
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Vdc |
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(VCE = VGE, IC = 1.0 mAdc) |
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4.0 |
6.0 |
8.0 |
mV/°C |
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Threshold Temperature Coefficient (Negative) |
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10 |
Ð |
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Forward Transconductance (VCE = 10 Vdc, IC = 20 Adc) |
gfe |
Ð |
8.6 |
Ð |
Mhos |
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DYNAMIC CHARACTERISTICS |
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Input Capacitance |
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(VCE = 25 Vdc, VGE = 0 Vdc, |
Cies |
Ð |
1605 |
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pF |
Output Capacitance |
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Coes |
Ð |
146 |
Ð |
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f = 1.0 MHz) |
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Transfer Capacitance |
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Cres |
Ð |
23 |
Ð |
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SWITCHING CHARACTERISTICS (1) |
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Turn±On Delay Time |
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td(on) |
Ð |
29 |
Ð |
ns |
Rise Time |
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tr |
Ð |
60 |
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Turn±Off Delay Time |
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(VCC = 360 Vdc, IC = 20 Adc, |
td(off) |
Ð |
238 |
Ð |
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VGE = 15 Vdc, L = 300 mH, |
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Fall Time |
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tf |
Ð |
140 |
Ð |
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RG = 20 Ω, TJ = 25°C) |
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Turn±Off Switching Loss |
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Eoff |
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0.8 |
1.15 |
mJ |
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Energy losses include ªtailº |
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Turn±On Switching Loss |
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Eon |
Ð |
0.6 |
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Total Switching Loss |
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Ets |
Ð |
1.4 |
Ð |
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Turn±On Delay Time |
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td(on) |
Ð |
28 |
Ð |
ns |
Rise Time |
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tr |
Ð |
62 |
Ð |
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Turn±Off Delay Time |
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(VCC = 360 Vdc, IC = 20 Adc, |
td(off) |
Ð |
338 |
Ð |
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VGE = 15 Vdc, L = 300 mH, |
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Fall Time |
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tf |
Ð |
220 |
Ð |
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RG = 20 Ω, TJ = 125°C) |
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Turn±Off Switching Loss |
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Eoff |
Ð |
1.3 |
Ð |
mJ |
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Energy losses include ªtailº |
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Turn±On Switching Loss |
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Eon |
Ð |
0.8 |
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Total Switching Loss |
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Ets |
Ð |
2.1 |
Ð |
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Gate Charge |
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(VCC = 360 Vdc, IC = 20 Adc, |
QT |
Ð |
86 |
Ð |
nC |
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Q1 |
Ð |
18 |
Ð |
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VGE = 15 Vdc) |
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Q2 |
Ð |
39 |
Ð |
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DIODE CHARACTERISTICS |
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Diode Forward Voltage Drop |
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VFEC |
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Vdc |
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(IEC = 10 Adc) |
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Ð |
1.6 |
1.9 |
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(IEC = 10 Adc, TJ = 125°C) |
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Ð |
1.3 |
Ð |
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(IEC = 17 Adc) |
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1.7 |
2.0 |
2.3 |
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(1) Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%. |
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(continued) |
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2 |
Motorola IGBT Device Data |
MGW21N60ED
ELECTRICAL CHARACTERISTICS Ð continued (TJ = 25°C unless otherwise noted)
Characteristic |
Symbol |
Min |
Typ |
Max |
Unit |
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DIODE CHARACTERISTICS Ð continued |
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Reverse Recovery Time |
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trr |
Ð |
94 |
Ð |
ns |
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(IF = 20 Adc, VR = 360 Vdc, |
ta |
Ð |
32 |
Ð |
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dIF/dt = 200 A/ms) |
t |
Ð |
62 |
Ð |
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b |
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Reverse Recovery Stored Charge |
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QRR |
Ð |
0.16 |
Ð |
mC |
Reverse Recovery Time |
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trr |
Ð |
145 |
Ð |
ns |
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(IF = 20 Adc, VR = 360 Vdc, |
ta |
Ð |
50 |
Ð |
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dIF/dt = 200 A/ms, TJ = 125°C) |
t |
Ð |
95 |
Ð |
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b |
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Reverse Recovery Stored Charge |
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QRR |
Ð |
0.75 |
Ð |
mC |
INTERNAL PACKAGE INDUCTANCE |
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Internal Emitter Inductance |
LE |
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nH |
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(Measured from the emitter lead 0.25″ from package to emitter bond pad) |
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Ð |
13 |
Ð |
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60 |
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17.5 V |
15 V |
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60 |
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TJ = 25°C |
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(AMPS) |
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20 V |
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(AMPS) |
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12.5 V |
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CURRENT |
40 |
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CURRENT |
40 |
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VGE = 10 V |
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, COLLECTOR |
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, COLLECTOR |
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20 |
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20 |
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C |
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C |
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I |
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I |
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0 |
2 |
4 |
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0 |
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0 |
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6 |
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VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS) |
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TJ = 125°C |
17.5 V |
15 V |
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20 V |
12.5 V |
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VGE = 10 V |
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0 |
2 |
4 |
6 |
8 |
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VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS) |
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Figure 1. Output Characteristics |
Figure 2. Output Characteristics |
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60 |
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(VOLTS) |
2.3 |
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VCE = 100 V |
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CURRENT(AMPS) |
50 |
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VOLTAGE |
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5 ms PULSE WIDTH |
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2.1 |
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40 |
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30 |
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1.9 |
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,COLLECTOR |
20 |
TJ = 125°C |
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COLLECTOR±TO±EMITTER |
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1.7 |
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10 |
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C |
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25°C |
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I |
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0 |
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1.5 |
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CE |
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5 |
7 |
9 |
11 |
13 |
15 |
17 |
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V |
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VGE, GATE±TO±EMITTER VOLTAGE (VOLTS)
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IC = 20 A |
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15 A |
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VGE = 15 V |
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10 A |
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80 ms PULSE WIDTH |
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±50 |
±25 |
0 |
25 |
50 |
75 |
100 |
125 |
150 |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 3. Transfer Characteristics |
Figure 4. Collector±To±Emitter Saturation |
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Voltage versus Junction Temperature |
Motorola IGBT Device Data |
3 |
MGW21N60ED |
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4000 |
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(VOLTS) |
20 |
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TJ = 25°C |
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3200 |
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VGE = 0 V |
16 |
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GATE±TO±EMITTERVOLTAGE |
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2400 |
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Cies |
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12 |
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1600 |
Coes |
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8 |
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800 |
Cres |
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4 |
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(pF)CAPACITANCEC, |
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, |
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GE |
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0 |
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V |
0 |
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0 |
5 |
10 |
15 |
20 |
25 |
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QT |
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Q1 |
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Q2 |
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TJ = 25°C |
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VCC = 300 V |
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IC = 20 A |
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0 |
25 |
50 |
75 |
100 |
125 |
VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS) |
QG, TOTAL GATE CHARGE (nC) |
Figure 5. Capacitance Variation |
Figure 6. Gate±To±Emitter Voltage versus |
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Total Charge |
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3.0 |
TJ = 125°C |
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(mJ) |
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2.5 |
VDD = 360 V |
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IC = 20 A |
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LOSSES |
VGE = 15 V |
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2.0 |
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ENERGY |
1.5 |
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15 A |
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, TOTAL |
1.0 |
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10 A |
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TS |
0.5 |
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E |
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0 |
10 |
20 |
30 |
40 |
50 |
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5 |
RG, GATE RESISTANCE (OHMS)
Figure 7. Total Energy Losses versus
Gate Resistance
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2.5 |
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(mJ) |
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VCC = 360 V |
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IC = 20 A |
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2.0 |
VGE = 15 V |
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LOSSES |
RG = 20 W |
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1.5 |
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15 A |
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ENERGY |
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1.0 |
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10 A |
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, TOTAL |
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TS |
0.5 |
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E |
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0 |
±25 |
0 |
25 |
50 |
75 |
100 |
125 |
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±50 |
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TJ, JUNCTION TEMPERATURE (°C) |
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Figure 8. Total Energy Losses versus
Junction Temperature
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1.5 |
ENERGY LOSSES (mJ) |
2.0 |
TJ = 125°C |
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ENERGY LOSSES (mJ) |
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VCC = 360 V |
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1.3 |
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1.6 |
VGE = 15 V |
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RG = 20 W |
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1.2 |
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1.1 |
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0.9 |
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, TOTAL |
0.8 |
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TURN±OFF, |
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TS |
0.4 |
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0.7 |
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E |
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off |
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E |
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0 |
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0.5 |
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0 |
5 |
10 |
15 |
20 |
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IC, COLLECTOR CURRENT (AMPS)
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IC = 20 A |
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TJ = 125°C |
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VDD = 360 V |
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VGE = 15 V |
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15 A |
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10 A |
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5 |
15 |
25 |
35 |
45 |
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RG, GATE RESISTANCE (OHMS) |
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Figure 9. Total Energy Losses versus |
Figure 10. Turn±Off Losses versus |
Collector Current |
Gate Resistance |
4 |
Motorola IGBT Device Data |
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1.4 |
(mJ) |
1.6 |
VCC = 360 V |
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(mJ) |
1.2 |
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VGE = 15 V |
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LOSSES |
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IC = 20 A |
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LOSSES |
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RG = 20 W |
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1.0 |
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1.2 |
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15 A |
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ENERGY |
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ENERGY |
0.8 |
0.8 |
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10 A |
0.6 |
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, TURN±OFF |
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,TURN±OFF |
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0.4 |
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0.4 |
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0.2 |
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off |
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off |
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E |
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E |
0 |
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0 |
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±50 |
±25 |
0 |
25 |
50 |
75 |
100 |
125 |
150 |
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TJ, JUNCTION TEMPERATURE (°C) |
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MGW21N60ED |
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TJ = 125°C |
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VCC = 360 V |
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VGE = 15 V |
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R |
G |
= 20 W |
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0 |
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5 |
10 |
15 |
20 |
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Turn±Off Losses versus |
Figure 12. Turn±Off Losses versus |
Junction Temperature |
Collector Current |
100
FORWARDINSTANTANEOUS (AMPS)CURRENT 10 ,
I F
1
0.5
TJ = 125°C
25°C
1.0 |
1.5 |
2.0 |
2.5 |
VFM, FORWARD VOLTAGE DROP (VOLTS) |
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Figure 13. Forward Characteristics
versus Current
IC, COLLECTOR CURRENT (AMPS)
100
10
TJ = 125°C
RGE = 20 W
VGE = 15 V
1
1 |
10 |
100 |
1000 |
VCE, COLLECTOR±TO±EMITTER VOLTAGE (VOLTS)
Figure 14. Reverse Biased Safe
Operating Area
Motorola IGBT Device Data |
5 |
MGW21N60ED
PACKAGE DIMENSIONS
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±Q± |
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±T± |
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E |
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0.25 (0.010) M T |
B |
M |
±B± |
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NOTES: |
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C |
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DIMENSIONING AND TOLERANCING PER ANSI |
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4 |
Y14.5M, 1982. |
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U |
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L |
CONTROLLING DIMENSION: MILLIMETER. |
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MILLIMETERS |
INCHES |
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A |
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DIM |
MIN |
MAX |
MIN |
MAX |
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R |
A |
19.7 |
20.3 |
0.776 |
0.799 |
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B |
15.3 |
15.9 |
0.602 |
0.626 |
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1 |
2 |
3 |
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C |
4.7 |
5.3 |
0.185 |
0.209 |
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D |
1.0 |
1.4 |
0.039 |
0.055 |
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E |
1.27 REF |
0.050 REF |
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±Y± |
F |
2.0 |
2.4 |
0.079 |
0.094 |
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P |
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G |
5.5 BSC |
0.216 BSC |
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K |
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H |
2.2 |
2.6 |
0.087 |
0.102 |
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J |
0.4 |
0.8 |
0.016 |
0.031 |
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K |
14.2 |
14.8 |
0.559 |
0.583 |
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L |
5.5 NOM |
0.217 NOM |
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V |
H |
P |
3.7 |
4.3 |
0.146 |
0.169 |
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F |
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Q |
3.55 |
3.65 |
0.140 |
0.144 |
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G |
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J |
R |
5.0 NOM |
0.197 NOM |
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D |
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U |
5.5 BSC |
0.217 BSC |
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V |
3.0 |
3.4 |
0.118 |
0.134 |
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0.25 (0.010) M |
Y |
Q S |
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STYLE 4: |
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PIN 1. GATE |
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CASE 340K±01 |
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2. COLLECTOR |
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3. EMITTER |
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ISSUE A |
4. COLLECTOR |
|
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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6 |
◊ |
MGW21N60ED/D |
|
Motorola IGBT Device Data |