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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MHPM7B8A120A/D

Hybrid Power Module

Integrated Power Stage for 1.0 hp Motor Drives

This module integrates a 3±phase input rectifier bridge, 3±phase output inverter and brake transistor/diode in a single convenient package. The output inverter utilizes advanced insulated gate bipolar transistors (IGBT) matched with free±wheeling diodes to give optimal dynamic performance. It has been configured for use as a three±phase motor drive module or for many other power switching applications. The top connector pins have been designed for easy interfacing to the user's control board.

•Short Circuit Rated 10 μs @ 25°C

•Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)

•Convenient Package Outline

•UL Recognized and Designed to Meet VDE

•Access to Positive and Negative DC Bus

MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)

MHPM7B8A120A

Motorola Preferred Device

8.0 AMP, 1200 VOLT HYBRID POWER MODULE

PLASTIC PACKAGE

CASE 440-01, Style 1

Rating	Symbol	Value	Unit

INPUT RECTIFIER BRIDGE

Repetitive Peak Reverse Voltage	VRRM	1200	V
Average Output Rectified Current (1)	IO	8.0	A
Peak Non-repetitive Surge Current	IFSM	200	A
OUTPUT INVERTER

IGBT Reverse Voltage	VCES	1200	V
Gate-Emitter Voltage	VGES	± 20	V
Continuous IGBT Collector Current	IC	8.0	A
Peak IGBT Collector Current ± (PW = 1.0 ms) (2)	IC(pk)	16	A
Continuous Free-Wheeling Diode Current	IF	8.0	A
Peak Free-Wheeling Diode Current ± (PW = 1.0 ms) (2)	IF(pk)	16	A
IGBT Power Dissipation	PD	50	W
Free-Wheeling Diode Power Dissipation	PD	30	W
IGBT Junction Temperature Range	TJ	± 40 to +125	°C
Free-Wheeling Diode Junction Temperature Range	TJ	± 40 to +125	°C
(1) 1 cycle = 50 or 60 Hz
(2) 1 ms = 1.0% duty cycle

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola, Inc. 1995

MOTOROLA

MAXIMUM DEVICE RATINGS (continued) (TJ = 25°C unless otherwise noted)

Rating	Symbol	Value	Unit

BRAKE CIRCUIT

IGBT Reverse Voltage	VCES	1200	V
Gate-Emitter Voltage	VGES	± 20	V
Continuous IGBT Collector Current	IC	8.0	A
Peak IGBT Collector Current (PW = 1.0 ms) (2)	IC(pk)	16	A
IGBT Power Dissipation	PD	50	W

Diode Reverse Voltage	VRRM	1200	V
Continuous Output Diode Current	IF	8.0	A
Peak Output Diode Current (PW = 1.0 ms) (2)	IF(pk)	16	A
TOTAL MODULE

Isolation Voltage ± (47±63 Hz, 1.0 Minute Duration)	VISO	2500	VAC
Ambient Operating Temperature Range	TA	± 40 to + 85	°C
Operating Case Temperature Range	TC	± 40 to + 90	°C
Storage Temperature Range	Tstg	± 40 to +150	°C
Mounting Torque	±	6.0	lb±in

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

INPUT RECTIFIER BRIDGE

Reverse Leakage Current (VRRM = 1200 V)	IR	±	10	50	μA
Forward Voltage (IF = 8.0 A)	VF	±	1.05	1.5	V
Thermal Resistance (Each Die)	RθJC	±	±	2.9	°C/W
OUTPUT INVERTER

Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)	IGES	±	±	± 20	μA
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)	ICES
TJ = 25°C		±	±	100	μA
TJ = 125°C		±	±	500	μA
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)	VGE(th)	4.0	6.0	8.0	V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)	V(BR)CES	1200	1300	±	V
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 8.0 A)	VCE(SAT)	±	2.5	3.5	V
Input Capacitance (VGE = 0 V, VCE = 25 V, f = 1.0 MHz)	Cies	±	1000	±	pF
Input Gate Charge (VCE = 600 V, IC = 8.0 A, VGE = 15 V)	QT	±	75	±	nC
Fall Time ± Inductive Load	tfi
(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω)		±	350	500	ns
Turn-On Energy	E(on)	±	±	1.0	mJ
(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω)
Turn-Off Energy	E(off)	±	±	1.0	mJ
(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω)
Diode Forward Voltage (IF = 8.0 A, VGE = 0 V)	VF	±	1.6	2.2	V
Diode Reverse Recovery Time	trr
(IF = 8.0 A, V = 600 V, dI/dt = 50 A/μs)		±	140	200	ns
Diode Stored Charge (IF = 8.0 A, V = 600 V, di/dt = 50 A/μs)	Qrr	±	±	900	nC
Thermal Resistance ± IGBT (Each Die)	RθJC	±	±	2.2	°C/W
Thermal Resistance ± Free-Wheeling Diode (Each Die)	RθJC	±	±	3.7	°C/W
(2) 1.0 ms = 1.0% duty cycle

MHPM7B8A120A	MOTOROLA
2

ELECTRICAL CHARACTERISTICS (continued) (TJ = 25°C unless otherwise noted)

Characteristic	Symbol	Min	Typ	Max	Unit

BRAKE CIRCUIT

Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)	IGES	±	±	± 20	μA
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)	ICES
TJ = 25°C		±	±	100	μA
TJ = 125°C		±	±	500	μA
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)	VGE(th)	4.0	6.0	8.0	V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0)	V(BR)CES	1200	1300	±	V
Collector-Emitter Saturation Voltage (VGE = 15 V, IC = 8.0 A)	VCE(SAT)	±	2.5	3.5	V
Input Capacitance (VGE = 0 V, VCE = 10 V, f = 1.0 MHz)	Cies	±	1000	±	pF
Input Gate Charge (VCE = 600 V, IC = 8.0 A, VGE = 15 V)	QT	±	75	±	nC
Fall Time ± Inductive Load	tfi
(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω)		±	350	500	ns
Turn-On Energy	E(on)
(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω)		±	±	1.0	mJ
Turn-Off Energy	E(off)		±
(VCE = 600 V, IC = 8.0 A, VGE = 15 V, RG = 150 Ω)		±		1.0	mJ
Diode Forward Voltage (IF = 8.0 A)	VF	±	1.6	2.2	V
Diode Reverse Leakage Current	IR	±	±	50	μA
Thermal Resistance ± IGBT	RθJC	±	±	2.2	°C/W
Thermal Resistance ± Diode	RθJC	±	±	3.7	°C/W

MOTOROLA	MHPM7B8A120A
	3

4	MHPM7B8A120A

Schematic Stage Power Integrated .1 Figure

MOTOROLA

			1	7
			P1	P2
					Q1		Q3		Q5
			9		D1	11	D3	13	D5
						11		13

			G1			G3		G5
			E1			E3		E5
			8			10		12
									U	20
24	R								V	19
			B						V	19
			B
23	S		21						W	18
22	T		Q7		Q2		Q4		Q6
22	T				Q2		Q4		Q6
		15	16		D2	17	D4	14	D6
					D2		D4		D6
		G7	G2			G4		G6
	N1	N2
	25	6
				NC	2				DEVICE INTEGRATION
				NC	2

NC	3	These pins are physical

= PIN NUMBER IDENTIFICATION		terminations but not	3±Phase	Brake	3±Phase

NC	4	connected internally.	Input		Output
				IGBT/
			Rectifier		IGBT/Diode
				Diode
NC	5		Bridge		Bridge

Typical Characteristics

I F , FORWARD CURRENT (A)

TJ = 125°C

25°C

0.5

1.0

1.5

VF, FORWARD VOLTAGE (V)

Figure 2. Input Bridge Forward Current IF versus Forward Voltage VF

I F , FORWARD CURRENT (A)

TJ = 125°C

25°C

0	1	2	3	4
0

VF, FORWARD VOLTAGE (V)

Figure 3. Output Inverter Forward Current IF versus Forward Voltage VF

(A)	1000
rr
I	(ns)
REVERSEPEAKRECOVERY CURRENT
								TJ =		125°C
	rr
	100	trr							25°C


	REVERSERECOVERYTIMEt





								TJ =		125°C
	10							TJ =		125°C



		I							°
			rr						25 C
	1						±di/dt	= 50		A/μs

			2	4	6	8	10		12
	0		2	4	6	8	10		12

IF, FORWARD CURRENT (A)

Figure 4. Output Inverter Reverse Recovery trr, Irr versus Forward Current IF

	25
	25	VGE = 18 V				TJ =	125°C
		VGE = 18 V
			15 V
(A)	20		15 V


CURRENT	15
CURRENT	15					12 V
COLLECTOR,	10
	10
I	5
C						9 V
						9 V
	0
	0	4	8	12	16	20
	0	4	8	12	16	20

VCE, COLLECTOR±EMITTER VOLTAGE (V)

Figure 6. Ouput Inverter Collector Current IC versus Collector±Emitter Voltage VCE

	25
	25	VGE = 18 V				TJ =	25°C
		VGE = 18 V				TJ =	25°C
(A)	20		15 V


CURRENT	15

						12 V
COLLECTOR,	10
COLLECTOR,
C
	5

I
						9 V
	0
	0	4	8	12	16	20
	0	4	8	12	16	20

VCE, COLLECTOR±EMITTER VOLTAGE (V)

Figure 5. Output Inverter Collector Currrent IC versus Collector±Emitter Voltage VCE

	10
(V)	10	IC = 4 A	8 A		16 A		TJ =	25°C
(V)		IC = 4 A	8 A		16 A
VOLTAGE
VOLTAGE	8
EMITTER-	8
EMITTER-	6
COLLECTOR	6
COLLECTOR	2
,	4


CE
V
	0
	0	10	12	14		16	18
	8	10	12	14		16	18

VGE, GATE±EMITTER VOLTAGE (V)

Figure 7. Inverter Collector±Emitter Voltage VCE

versus Gate±Emitter Voltage VGE

MOTOROLA	MHPM7B8A120A
	5

							Typical Characteristics
(V)	900	TJ = 25°C						18		10000	VCE = 600 V
(V)		TJ = 25°C									VCE = 600 V
VOLTAGEEMITTER-COLLECTOR	800	I = 8.0 A						16	V	ENERGYSWITCHING	VGE = 15 V
VOLTAGEEMITTER-COLLECTOR	200	C				400 V		4	V	ENERGYSWITCHING	RG = 10	Ω
		C
	700							14	(V)	(μJ)
		600 V				500 V			(V)	(μJ)

	600				600 V			12	VOLTAGE	1000		TJ =125°C
	600	500 V						12		1000

	500							10
	500	400 V						10
	400	400 V						8	GATE,			25°C
									GATE,			25°C

	300							6	GE	100
									GE
,
CE								2
V	100							2
	0	10	20	30	40	50	60	0		10		10
	0	10	20	30	40	50	60	70		1		10

QG, GATE CHARGE (nC)

Figure 8. Gate±to±Emitter Voltage versus

Gate Charge

10000
		VCE = 600 V
		VGE = 15 V
(μJ)		IC = 8.0 A
(μJ)	1000		TJ =125°C
ENERGY	1000		TJ =125°C
SWITCHING

	100		25°C
			25°C




		100		1000
	10	100		1000

RG, GATE RESISTANCE (Ω)

Figure 10. Inverter Switching Energy E(off) versus Gate Resistance RG

10000
		VCE = 600 V
		VGE = 15 V
		RG = 10 Ω
TIME (ns)		TJ = 125°C

			t(off)
SWITCHING	1000		t(off)
SWITCHING	1000
			tf




	100		td

		10
	1	10

IC, COLLECTOR CURRENT (A)

Figure 12. Inverter Switching Time tf, td, t(off)

versus Collector Current IC

IC, COLLECTOR CURRENT (A)

Figure 9. Inverter Switching Energy E(off) versus Collector Current IC

10000

VCE = 600 V

VGE = 15 V

RG = 10 Ω

TIME (ns)

TJ = 25°C

SWITCHING

1000

t(off)

100

IC, COLLECTOR CURRENT (A)

Figure 11. Inverter Switching Time tf, td, t(off)

versus Collector Current IC

10000

VCE = 600 V

VGE = 15 V

IC = 8.0 A

TJ = 25°C

(ns)

(off)

TIME

1000

SWITCHING

100

1000

RG, GATE RESISTANCE (Ω)

Figure 13. Inverter Switching Time tf,td, t(off)

versus Gate Resistance RG

MHPM7B8A120A	MOTOROLA
6

Typical Characteristics

10000

VCE = 600 V

VGE = 15 V

IC = 8.0 A

(ns)

TJ = 125°C

(off)

TIME

SWITCHING

1000

100

1000

RG, GATE RESISTANCE (Ω)

Figure 14. Inverter Switching Time tf, td, t(off)

versus Gate Resistance RG

1000

VCE = 600 V

VGE = 15 V

IC = 8.0 A

TIME (ns)

		TJ =125°C
SWITCHING	100
	100	25°C
	10	25°C







		100	1000
	10	100	1000

RG, GATE RESISTANCE (Ω)

Figure 16. Inverter Switching Time tr

versus Gate Resistance RG

	1000	VCE = 600 V
		VCE = 600 V
		VGE = 15 V
		RG = 10 Ω
TIME (ns)		25°C
SWITCHING	100	25°C
		TJ =125°C
	10	10
	1	10

IC, COLLECTOR CURRENT (A)

Figure 15. Inverter Switching Time tr

versus Collector Current IC

10000

(pF)	1000						Cies


CAPACITANCE





	100						Coes





	10						Cres

		20	40	60	80	100	120	140	160	180	200
	0	20	40	60	80	100	120	140	160	180	200

VCE, COLLECTOR±EMITTER VOLTAGE (V)

Figure 17. Output Inverter Capacitance versus Collector Voltage

IC, COLLECTOR CURRENT (A)

100							1.0
					TRANSIENTEFFECTIVETHERMAL	(NORMALIZED)RESISTANCE		DIODE
10					TRANSIENTEFFECTIVETHERMAL	(NORMALIZED)RESISTANCE	0.1		IGBT
									IGBT

1.0	+VGE = 15 V						0.01
	+VGE = 15 V
	±VGE = 0 V				r(t),
	RG = 150 Ω				r(t),
	RG = 150 Ω
0.1	TJ = 25°C					0.001
0.1	400	800	1200	1600	2000	0.001		10	100	1000
0	400	800	1200	1600	2000		1	10	100	1000
	VCE, COLLECTOR±EMITTER VOLTAGE (V)								t, TIME (ms)

Figure 18. Output Inverter Reversed Biased	Figure 19. Transient Thermal Resistance
Safe Operating Area

MOTOROLA	MHPM7B8A120A
	7

PACKAGE DIMENSIONS

E	C	V
	C	K
		K

		AB		AE				AA
		AC				AF		9 PL
		AC				AF
				AD		3 PL
				AD
											DETAIL Z
				A
										Q
	N	G			AH					2 PL
W		G			2 PL		17
W		1					17									T
2 PL																T
L
M									S	R	B
											NOTES:
											1. DIMENSIONING AND TOLERANCING PER ANSI
											Y14.5M, 1982.
Y		25					18			X	2.	CONTROLLING DIMENSION: MILLIMETER.
Y				AG						X	3.	LEAD LOCATION DIMENSIONS (ie: M, B. AA...)
4 PL				AG						4 PL	ARE TO THE CENTER OF THE LEAD.
4 PL				P						4 PL	ARE TO THE CENTER OF THE LEAD.
				P									MILLIMETERS		INCHES
				U									MILLIMETERS		INCHES
				U								DIM	MIN	MAX	MIN	MAX
												A	97.54	98.55	3.840	3.880
												B	52.45	53.47	2.065	2.105
												C	14.60	15.88	0.575	0.625
	H					J						D	0.43	0.84	0.017	0.033
						J						E	10.80	12.06	0.425	0.475
						25 PL						E	10.80	12.06	0.425	0.475
	7 PL					25 PL						F	0.94	1.35	0.037	0.053
	7 PL											F	0.94	1.35	0.037	0.053
												G	1.60	2.21	0.063	0.087
												H	8.58	9.19	0.338	0.362
												J	0.30	0.71	0.012	0.028
												K	18.80	20.57	0.74	0.81
												L	19.30	20.32	0.760	0.800
												M	38.99	40.26	1.535	1.585
												N	9.78	11.05	0.385	0.435
												P	82.55	83.57	3.250	3.290
												Q	4.01	4.62	0.158	0.182
				D								R	26.42	27.43	1.040	1.080
				D								S	12.06	12.95	0.475	0.515
												S	12.06	12.95	0.475	0.515
		F										T	4.32	5.33	0.170	0.210
		F										U	86.36	87.38	3.400	3.440
												V	14.22	15.24	0.560	0.600
												W	7.62	8.13	0.300	0.320
				DETAIL Z								X	6.55	7.16	0.258	0.282
				DETAIL Z								Y	2.49	3.10	0.098	0.122
												AA	2.24	2.84	0.088	0.112
												AB	7.32	7.92	0.288	0.312
STYLE 1:												AC	4.78	5.38	0.188	0.212
STYLE 1:												AD	8.58	9.19	0.338	0.362
PIN 1.	P1	PIN 6.	N2	PIN 11.	G3	PIN 16.	G2	PIN 21.	B			AD	8.58	9.19	0.338	0.362
2.	T±	7.	P2	12.	K5	17.	G4	22.	T			AE	6.05	6.65	0.238	0.262
3.	T+	8.	K1	13.	G5	18.	W	23.	S			AF	4.78	5.38	0.188	0.212
4.	I+	9.	G1	14.	G6	19.	V	24.	R			AG	69.34	70.36	2.730	2.770
5.	I±	10.	K3	15.	G7	20.	U	25.	N1			AH	±±±	5.08	±±±	0.200

CASE 440-01

ISSUE O

MHPM7B8A120A	MOTOROLA
8

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters can and do vary in different applications. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

MOTOROLA	MHPM7B8A120A
	9

How to reach us:
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P.O. Box 20912; Phoenix, Arizona 85036. 1±800±441±2447	6F Seibu±Butsuryu±Center, 3±14±2 Tatsumi Koto±Ku, Tokyo 135, Japan. 03±3521±8315
MFAX: RMFAX0@email.sps.mot.com ±TOUCHTONE (602) 244±6609	HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
INTERNET: http://Design±NET.com	51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

◊ CODELINE TO BE PLACED HERE		MHPM7B8A120 /D
		MOTOROLA

10	MHPM7B8A120A/D

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