MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHPM6B10N120/D
Hybrid Power Module
Integrated Power Stage for 460 VAC Motor Drives
These modules integrate a 3±phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp motor drive applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) matched with fast soft free±wheeling diodes to give optimum performance. The top connector pins are designed for easy interfacing to the user's control board.
•Short Circuit Rated 10 μs @ 125°C, 720 V
•Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)
•Compact Package Outline
•Access to Positive and Negative DC Bus
•UL
Recognized
ORDERING INFORMATION
Device |
Current Rating |
Package |
|
|
|
MHPM6B10N120SL |
10 |
464A±01 |
MHPM6B15N120SL |
15 |
Style 1 |
MHPM6B25N120SL |
25 |
|
|
|
|
MHPM6B10N120SS |
10 |
464B±02 |
MHPM6B15N120SS |
15 |
Style 1 |
MHPM6B25N120SS |
25 |
|
|
|
|
MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)
MHPM6B10N120
MHPM6B15N120
MHPM6B25N120
SERIES
Motorola Preferred Devices
10, 15, 25 A, 1200 V |
HYBRID POWER MODULES |
SL SUFFIX |
CASE 464A±01 |
Style 1 |
SS SUFFIX |
CASE 464B±02 |
Style 1 |
Rating |
|
Symbol |
Value |
Unit |
|
|
|
|
|
IGBT Reverse Voltage |
|
VCES |
1200 |
V |
Gate-Emitter Voltage |
|
VGES |
± 20 |
V |
Continuous IGBT Collector Current (TC = 80°C) |
10A120 |
ICmax |
10 |
A |
|
15A120 |
|
15 |
|
|
25A120 |
|
25 |
|
|
|
|
|
|
Repetitive Peak IGBT Collector Current (1) |
10A120 |
I |
20 |
A |
|
15A120 |
C(pk) |
30 |
|
|
|
|
||
|
25A120 |
|
50 |
|
|
|
|
|
|
Continuous Diode Current (TC = 25°C) |
10A120 |
IFmax |
10 |
A |
|
15A120 |
|
15 |
|
|
25A120 |
|
25 |
|
|
|
|
|
|
Continuous Diode Current (TC = 80°C) |
10A120 |
IF80 |
8.3 |
A |
|
15A120 |
|
11 |
|
|
25A120 |
|
14 |
|
|
|
|
|
|
Repetitive Peak Diode Current (1) |
10A120 |
I |
20 |
A |
|
15A120 |
F(pk) |
30 |
|
|
|
|
||
|
25A120 |
|
50 |
|
|
|
|
|
|
IGBT Power Dissipation per die (TC = 95°C) |
10A120 |
PD |
41 |
W |
|
15A120 |
|
50 |
|
|
25A120 |
|
65 |
|
|
|
|
|
|
Diode Power Dissipation per die (TC = 95°C) |
10A120 |
PD |
16 |
W |
|
15A120 |
|
22 |
|
|
25A120 |
|
27 |
|
|
|
|
|
|
(1) 1.0 ms = 1.0% duty cycle
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola IGBT Device Data |
1 |
Motorola, Inc. 1998
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)
Rating |
|
|
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Symbol |
Value |
Unit |
||||
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Junction Temperature Range |
|
|
|
TJ |
± 40 to +150 |
°C |
||||
Short Circuit Duration (VCE = 720 V, TJ = 125°C) |
|
|
|
tsc |
10 |
|
|
ms |
||
Isolation Voltage, Pin to Baseplate |
|
|
|
VISO |
2500 |
|
|
Vac |
||
Operating Case Temperature Range |
|
|
|
TC |
± 40 to +95 |
°C |
||||
Storage Temperature Range |
|
|
|
Tstg |
± 40 to +150 |
°C |
||||
Mounting Torque Ð Heat Sink Mounting Holes |
|
|
|
Ð |
|
1.4 |
|
|
Nm |
|
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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) |
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|||
Characteristic |
|
Symbol |
Min |
|
Typ |
|
Max |
|
Unit |
|
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DC AND SMALL SIGNAL CHARACTERISTICS |
|
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|
|
|
|
|
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Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V) |
|
IGES |
Ð |
|
Ð |
|
± 20 |
|
μA |
|
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V) |
ICES |
Ð |
|
5.0 |
|
100 |
|
μA |
||
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA) |
|
VGE(th) |
5.0 |
|
6.0 |
|
7.0 |
|
V |
|
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V) |
V(BR)CES |
1200 |
|
Ð |
|
Ð |
|
V |
||
Collector-Emitter Saturation Voltage (IC = ICmax, VGE = 15 V) |
VCE(SAT) |
1.7 |
|
2.35 |
|
2.9 |
|
V |
||
TJ = 125°C |
|
|
|
Ð |
|
2.69 |
|
Ð |
|
|
Forward Transconductance |
10A120 |
gfe |
Ð |
|
8.3 |
|
Ð |
|
mho |
|
|
15A120 |
|
|
Ð |
|
14 |
|
Ð |
|
|
|
25A120 |
|
|
Ð |
|
19 |
|
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
|
Diode Forward Voltage (IF = IFmax, VGE = 0 V) |
|
VF |
1.7 |
|
2.35 |
|
3.1 |
|
V |
|
TJ = 125°C |
|
|
|
Ð |
|
1.9 |
|
Ð |
|
|
Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 MHz) |
10A120 |
Cies |
Ð |
|
1880 |
|
Ð |
|
pF |
|
|
15A120 |
|
|
Ð |
|
2620 |
|
Ð |
|
|
|
25A120 |
|
|
Ð |
|
4770 |
|
Ð |
|
|
|
|
|
|
|
|
|
|
|
||
Input Gate Charge (VCE = 600 V, IC = ICmax, VGE = 15 V)10A120 |
QT |
Ð |
|
65 |
|
Ð |
|
nC |
||
|
15A120 |
|
|
Ð |
|
87 |
|
Ð |
|
|
|
25A120 |
|
|
Ð |
|
150 |
|
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
|
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25°C) |
|
|
|
|
|
|
|
|
|
|
Recommended Gate Resistor (RG(on) = RG(off)) |
10A120 |
RG |
Ð |
|
82 |
|
Ð |
|
W |
|
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
82 |
|
Ð |
|
|
|
25A120 |
|
|
Ð |
|
68 |
|
Ð |
|
|
|
|
|
|
|
|
|
|
|
||
Turn-On Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) |
td(on) |
|
|
|
|
|
|
ns |
||
|
10A120 |
|
|
Ð |
|
174 |
|
Ð |
|
|
|
15A120 |
|
|
Ð |
|
240 |
|
Ð |
|
|
|
25A120 |
|
|
Ð |
|
330 |
|
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
|
Rise Time (VCE = 600 V, IC = ICmax, VGE = 15 V) |
10A120 |
tr |
Ð |
|
84 |
|
Ð |
|
ns |
|
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
105 |
|
Ð |
|
|
|
25A120 |
|
|
Ð |
|
150 |
|
Ð |
|
|
|
|
|
|
|
|
|
|
|
||
Turn±Off Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) |
td(off) |
|
|
|
|
|
|
ns |
||
|
10A120 |
|
|
Ð |
|
640 |
|
Ð |
|
|
|
15A120 |
|
|
Ð |
|
780 |
|
Ð |
|
|
|
25A120 |
|
|
Ð |
|
1060 |
|
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
|
Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V) |
10A120 |
tf |
Ð |
|
39 |
|
47 |
|
ns |
|
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
48 |
|
58 |
|
|
|
25A120 |
|
|
Ð |
|
70 |
|
84 |
|
|
|
|
|
|
|
|
|
|
|
|
|
Turn-On Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) |
10A120 |
Eon |
Ð |
|
1.5 |
|
1.8 |
|
mJ |
|
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
2.7 |
|
3.3 |
|
|
|
25A120 |
|
|
Ð |
|
4.6 |
|
5.6 |
|
|
|
|
|
|
|
|
|
|
|
|
|
2 |
Motorola IGBT Device Data |
MHPM6B10N120 |
MHPM6B15N120 |
MHPM6B25N120 SERIES |
|||||||
|
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|
|
Characteristic |
|
|
Symbol |
Min |
|
Typ |
Max |
Unit |
|
|
|
|
|
|
|
|
|
||
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25°C) ± continued |
|
|
|
|
|
|
|||
Turn-Off Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) |
10A120 |
|
Eoff |
Ð |
|
1.1 |
1.4 |
mJ |
|
|
15A120 |
|
|
Ð |
|
1.7 |
2.1 |
|
|
|
25A120 |
|
|
Ð |
|
3.0 |
3.5 |
|
|
|
|
|
|
|
|
|
|
|
|
Diode Reverse Recovery Time (IF = IFmax, V = 600 V) |
10A120 |
|
trr |
Ð |
|
95 |
Ð |
ns |
|
|
15A120 |
|
|
Ð |
|
110 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
124 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Peak Reverse Recovery Current (IF = IFmax, V = 600 V) |
10A120 |
|
Irrm |
Ð |
|
8.0 |
Ð |
A |
|
|
15A120 |
|
|
Ð |
|
9.7 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
11.5 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Diode Stored Charge (IF = IFmax, V = 600 V) |
10A120 |
|
Qrr |
Ð |
|
550 |
Ð |
nC |
|
|
15A120 |
|
|
Ð |
|
600 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
740 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 125°C) |
|
|
|
|
|
|
|
||
Characteristic |
|
|
Symbol |
Min |
|
Typ |
Max |
Unit |
|
|
|
|
|
|
|
|
|
|
|
Turn±On Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) |
|
td(on) |
|
|
|
|
ns |
|
|
|
10A120 |
|
|
Ð |
|
160 |
Ð |
|
|
|
15A120 |
|
|
Ð |
|
220 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
310 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Rise Time (VCE = 600 V, IC = ICmax, VGE = 15 V) |
10A120 |
|
tr |
Ð |
|
93 |
Ð |
ns |
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
110 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
160 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Turn±Off Delay Time (VCE = 600 V, IC = ICmax, VGE = 15 V) |
|
td(off) |
|
|
|
|
ns |
|
|
|
10A120 |
|
|
Ð |
|
680 |
Ð |
|
|
|
15A120 |
|
|
Ð |
|
850 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
1140 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V) |
10A120 |
|
tf |
Ð |
|
51 |
Ð |
ns |
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
60 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
76 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Turn±On Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) |
10A120 |
|
Eon |
Ð |
|
2.0 |
Ð |
mJ |
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
3.6 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
6.1 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Turn±Off Energy (VCE = 600 V, IC = ICmax, VGE = 15 V) |
10A120 |
|
Eoff |
Ð |
|
1.5 |
Ð |
mJ |
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
2.4 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
4.2 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Diode Reverse Recovery Time (IF = IFmax, V = 600 V) |
10A120 |
|
trr |
Ð |
|
160 |
Ð |
ns |
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
210 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
250 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Peak Reverse Recovery Current (IF = IFmax, V = 600 V) |
10A120 |
|
Irrm |
Ð |
|
11.0 |
Ð |
A |
|
|
|
|
|
|
|
||||
|
15A120 |
|
|
Ð |
|
14.1 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
17.4 |
Ð |
|
|
|
|
|
|
|
|
|
|
|
|
Diode Stored Charge (IF = IFmax, V = 600 V) |
10A120 |
|
Qrr |
Ð |
|
995 |
Ð |
nC |
|
|
15A120 |
|
|
Ð |
|
1770 |
Ð |
|
|
|
25A120 |
|
|
Ð |
|
2460 |
Ð |
|
|
|
|
|
|
|
|
|
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|
THERMAL CHARACTERISTICS (Each Die) |
|
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||
Thermal Resistance Ð IGBT |
10A120 |
|
RqJC |
Ð |
|
1.1 |
1.3 |
°C/W |
|
|
15A120 |
|
|
Ð |
|
0.89 |
1.1 |
|
|
|
25A120 |
|
|
Ð |
|
0.68 |
0.85 |
|
|
|
|
|
|
|
|
|
|
|
|
Thermal Resistance Ð Diode |
10A120 |
|
RqJC |
Ð |
|
2.8 |
3.5 |
°C/W |
|
|
15A120 |
|
|
Ð |
|
2.0 |
2.5 |
|
|
|
25A120 |
|
|
Ð |
|
1.6 |
2.0 |
|
|
|
|
|
|
|
|
|
|
|
|
Motorola IGBT Device Data |
3 |
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
TYPICAL CHARACTERISTICS
(see also application information)
|
|
2.0 |
|
|
|
|
|
|
|
|
2.0 |
|
|
|
|
|
|
|
|
|
|
|
1.8 |
CURRENT |
) |
1.5 |
|
|
|
TJ = 125°C |
|
|
CURRENT |
) |
1.6 |
Fmax |
|
|
|
|
|
25°C |
Cmax |
1.4 |
|||
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||||||
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||||
/I |
|
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/I |
1.2 |
||
F |
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|
C |
|||
I |
|
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|
I |
|
||
, FORWARD |
(NORMALIZED: |
1.0 |
|
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|
|
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COLLECTOR, |
|
1.0 |
|
|
|
|
|
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|
0.8 |
|||
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0.6 |
|||
F |
|
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|
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||
I |
0.5 |
|
|
|
|
|
|
C (NORMALIZED: |
0.4 |
||
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|
I |
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0.2 |
|
|
0 |
|
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|
|
|
|
|
|
0 |
|
|
0 |
0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
3.0 |
3.5 |
|
|
|
|
|
|
VF, FORWARD VOLTAGE (VOLTS) |
|
|
|
|
|||
Figure 1. Forward Characteristics Ð
Free±Wheeling Diode
|
|
2.0 |
|
|
|
|
|
|
|
|
|
|
16 |
|
|
1.8 |
|
VGE = 18 V |
12 V |
|
|
|
|
(VOLTS) |
14 |
||
|
|
|
|
15 V |
|
|
|
|
|
|
|
||
CURRENT |
|
1.6 |
|
|
|
|
|
|
TJ = 125°C |
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) |
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12 |
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Cmax |
1.4 |
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1.2 |
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C |
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COLLECTOR |
(NORMALIZED:I |
1.0 |
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GATE±EMITTERVOLTAGE |
8.0 |
0.8 |
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6.0 |
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0.6 |
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C |
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I |
0.4 |
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0.2 |
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9.0 V |
GE |
2.0 |
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V |
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1.0 |
2.0 |
3.0 |
4.0 |
5.0 |
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0 |
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6.0 |
7.0 |
8.0 |
9.0 |
10 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
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Figure 3. Forward Characteristics, TJ = 125°C |
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) |
10 |
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) |
10 |
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TJ = 125°C |
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d(off)typ |
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d(off)typ |
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td(off) |
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TJ = 25°C |
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TIME/t |
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TIME/t |
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1.0 |
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1.0 |
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TIME (NORMALIZED: |
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VCE = 600 V |
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TIME (NORMALIZED: |
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VGE = 15 V |
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RG = RG(RECOMMENDED) |
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0.1 |
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0.1 |
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tf |
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t, |
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t, |
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0.01 |
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0.01 |
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0.2 |
0.4 |
0.6 |
0.8 |
1.0 |
1.2 |
1.4 |
1.6 |
1.8 |
2.0 |
2.2 |
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IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax) |
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° |
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V |
GE |
= 18 V |
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12 V |
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TJ = 25 C |
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15 V |
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9.0 V |
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0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
3.0 |
3.5 |
4.0 |
4.5 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS)
|
Figure 2. Forward Characteristics, TJ = 25°C |
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10N120 |
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15N120 |
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25N120 |
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VCE = 400 V |
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VCE = 500 V |
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VCE = 600 V |
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0 |
20 |
40 |
60 |
80 |
100 |
120 |
140 |
160 |
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Qg, TOTAL GATE CHARGE (nC) |
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Figure 4. Gate±Emitter Voltage versus Total Gate Charge
VCE = 600 V
VGE = 15 V
IC = ICmax
td(off)
tf
TJ = 125°C
TJ = 25°C
0 |
0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
31..0 |
RG, GATE RESISTANCE
(NORMALIZED: RG/RG(RECOMMENDED))
Figure 5. Inductive Switching Times versus |
Figure 6. Inductive Switching Times versus |
Collector Current |
Gate Resistance |
4 |
Motorola IGBT Device Data |
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
TYPICAL CHARACTERISTICS
|
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(see also application information) |
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2.5 |
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25°C |
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6.0 |
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td(on) |
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) |
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) |
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r(typ) |
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TJ = 125°C |
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r(typ) |
5.0 |
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2.0 |
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25°C |
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TIME/t |
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TIME/t |
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1.5 |
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4.0 |
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TJ = 125°C |
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(NORMALIZED: |
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(NORMALIZED: |
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TJ = 125°C |
25°C |
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3.0 |
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TJ = 125°C |
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1.0 |
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tr |
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2.0 |
td(on) |
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25°C |
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VCE = 600 V |
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t,TIME |
0.5 |
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t,TIME |
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VGE = 15 V |
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1.0 |
t |
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RG = RG(RECOMMENDED) |
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r |
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0 |
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2.2 |
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0 |
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0 |
0.2 |
0.4 |
0.6 |
0.8 |
1.0 |
1.2 |
1.4 |
1.6 |
1.8 |
2.0 |
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0 |
0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
3.0 |
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IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax) |
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RG, GATE RESISTANCE |
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(NORMALIZED: RG/RG(RECOMMENDED)) |
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||||
Figure 7. Inductive Switching Times versus |
Figure 8. Inductive Switching Times versus |
Collector Current |
Gate Resistance |
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) |
2.5 |
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) |
3.0 |
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TURN±OFF |
off(typ) |
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Eon, TJ = 125°C |
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TURN±OFF |
off(typ) |
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Eon, TJ = 125°C |
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E/E |
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E/E |
2.5 |
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Eon, TJ = 25°C |
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2.0 |
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° |
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Eon, TJ = 25°C |
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Eoff, TJ = 125 C |
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EANDTURN±ON, |
(NORMALIZED:LOSSES |
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VCE = 600 V |
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EANDTURN±ON, |
(NORMALIZED:LOSSES |
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VCE = 600 V |
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2.0 |
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, |
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, |
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Eoff, TJ = 125°C |
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off |
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1.5 |
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Eoff, TJ = 25°C |
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off |
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1.5 |
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1.0 |
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Eoff, TJ = 25°C |
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1.0 |
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on |
ENERGY |
0.5 |
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V |
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= 15 V |
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on |
ENERGY |
0.5 |
VGE = 15 V |
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E |
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GE |
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E |
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IC = ICmax |
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R |
= R |
G(RECOMMENDED) |
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G |
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0 |
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1.2 |
1.4 |
1.6 |
1.8 |
2.0 |
2.2 |
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0 |
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0 |
0.2 |
0.4 |
0.6 |
0.8 |
1.0 |
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0 |
0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
3.0 |
|||||||
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IC, COLLECTOR CURRENT (NORMALIZED: IC/ICmax) |
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RG, GATE RESISTANCE |
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(NORMALIZED: RG/RG(RECOMMENDED)) |
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||||
Figure 9. Turn±On and Turn±Off Energy |
Figure 10. Turn±On and Turn±Off Energy |
Losses versus Collector Current |
Losses versus Gate Resistance |
CURRENT |
|
100 |
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) |
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TIME |
rr(typ) |
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/I |
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TJ = 125°C |
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rr |
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I |
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RECOVERY |
RECOVERY |
10 * |
10 |
Irr |
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25°C |
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, |
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rr(typ) |
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TJ = 125°C |
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/t |
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REVERSE |
REVERSE |
rr |
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t |
1.0 |
trr |
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25°C |
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PEAK |
, |
(NORMALIZED: |
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rr |
|
V = 600 V |
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, |
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rr t |
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I |
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0.1 |
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1.4 |
1.6 |
1.8 |
2.0 |
2.2 |
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0 |
0.2 |
0.4 |
0.6 |
0.8 |
1.0 |
1.2 |
|||||
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IF, FORWARD CURRENT (NORMALIZED: IF/IFmax) |
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(pF/A)) |
1000 |
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Cmax |
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Ciss |
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TO I |
100 |
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(NORMALIZED |
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Coss |
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10 |
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CAPACITANCE |
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Crss |
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1.0 |
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C, |
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0 |
5.0 |
10 |
15 |
20 |
25 |
30 |
35 |
40 |
||
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||||||||||
|
|
VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
|
|||||||
Figure 11. Reverse Recovery Characteristics |
Figure 12. Capacitance Variation |
Ð Free±Wheeling Diode |
|
Motorola IGBT Device Data |
5 |
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
TYPICAL CHARACTERISTICS
(see also application information)
IC, COLLECTOR CURRENT (AMPS)
70 |
|
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|
VGE = 15 V |
|
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1.0 |
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THERMALTRANSIENTEFFECTIVE |
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||
60 |
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|
RG = RG(RECOMMENDED) |
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|||
50 |
|
|
25N120 |
|
TJ = 25°C |
|
|
(NORMALIZED)RESISTANCE |
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DIODE |
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0.1 |
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IGBT |
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40 |
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30 |
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15N120 |
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20 |
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10N120 |
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0.01 |
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10 |
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r(t), |
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0 |
200 |
400 |
600 |
800 |
1000 |
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1400 |
1600 |
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0.001 |
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0 |
1200 |
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0.01 |
0.1 |
1.0 |
10 |
100 |
1000 |
10,000 |
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VCE, COLLECTOR±EMITTER VOLTAGE (VOLTS) |
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t, TIME (ms) |
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Figure 13. Reverse Biased Safe Operating |
Figure 14. Thermal Response |
Area (RBSOA)
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90% |
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GATE DRIVE OUTPUT |
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10% |
td(on) |
tr |
t |
t |
f |
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d(off) |
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90% |
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IC |
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10% |
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3% |
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VCE |
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Eon |
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Eoff |
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1.0 ms |
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Figure 15. Timing Definitions
+15 V
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+15 V |
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MBRS130LT3 |
MBRS130LT3 |
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RG(on) |
MC33153 |
RG |
MC33153 |
|
MBRS130LT3 |
RG(off) |
|
MBRS130LT3 |
MBRS130LT3
Figure 16. Common Gate Drive Circuit |
Figure 17. Recommended Gate Drive Circuit |
6 |
Motorola IGBT Device Data |
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
APPLICATION INFORMATION
These modules are designed to be used as the power stage of a three±phase AC induction motor drive. They may be used for up to 460 VAC applications. Switching frequencies up to 15 kHz were considered in the design.
Gate resistance recommendations have been listed. These choices were based on the common gate drive circuit shown in Figure 16. However, significant improvements in
Eoff may be gained by either of two methods: use of a negative gate bias, or use of the gate drive shown in Figure 17.
Separate turn±on and turn±off gate resistors give the best re-
sults; in this case, RG(off) should be chosen as small as possible while limiting current to prevent damage to the gate
drive IC. Designers should also note that turn±on and turn± off delay times are measured from the rising and falling edges of the gate drive output, not the gate voltage waveform.
Since all three modules use similar technology, most of the graphs showing typical performance have been normalized. Actual values are listed for each size in the table, ªElectrical Characteristics.º Data on the graphs reflect performance using the common gate drive circuit shown in Figure 16.
The first three curves, showing DC characteristics, are normalized for ICmax. The devices all perform similarly at
rated current. The curves extend to IC(pk), the maximum allowable instantaneous current.
The next two graphs, turn±off and turn±on times versus IC, are also normalized for ICmax. In addition, the time scales are
normalized. Turn±off times are normalized to td(off) at 25°C at rated current with recommended RG, while turn±on times are
normalized to tr at 25°C at rated current with recommended
RG.
The graphs showing switching times as a function of RG are similarly normalized. RG has been normalized to the rec-
ommended value listed under ªElectrical Characteristics.º The time axes are normalized exactly as for the corresponding graphs showing variation with IC.
Similar transformations have been made for the next two figures, showing Eon and Eoff. Energies have been normal-
ized to Eoff at 25°C at ICmax with the recommended RG. IC has been normalized to ICmax, and RG has been normalized to the recommended value.
Reverse recovery characteristics are also normalized. IC has again been normalized to ICmax. Reverse recovery time
trr has been normalized to trr at 25°C at ICmax. Peak reverse recovery current Irrm has been normalized to Irrm at 25°C at
ICmax, then multiplied by 10.
Capacitance has been normalized to device rated ICmax. Since all modules are rated for the same voltage, the voltage scale on Figure 11 does not need to be normalized.
Typical transient thermal impedance is shown for a diode and for an IGBT. All diodes behave quite similarly, as do all IGBTs.
The last two graphs, VGE versus QG and RBSOA, are not normalized.
Many issues beyond the ratings must be considered in a system design. Dynamic characteristics can all be affected by external circuit parameters. For example, excessive bus inductance can dramatically increase voltage overshoot during switching, increasing the switching energy. The choice of gate drive IC can have quite a large effect on rise and fall times, corresponding to differences in switching energies. In many cases, this can be compensated by simply changing the gate resistor accordingly Ð a gate driver with a lower drive capability requires a smaller gate resistor. Ultimately, the module must be tested in the final system to characterize its performance.
1 |
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2 |
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3 |
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4 |
5 |
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Q1 |
D1 |
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Q3 |
D3 |
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Q5 |
D5 |
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Q2 |
D2 |
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Q4 |
D4 |
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Q6 |
D6 |
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17 |
16 |
15 |
14 |
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13 |
12 |
11 |
10 |
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9 |
8 |
7 |
6 |
|
|
Figure 18. Schematic of Module, Showing Pin±Out
Motorola IGBT Device Data |
7 |
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
RECOMMENDED PCB LAYOUT MODULE SIDE VIEW OF BOARD
(Typical Dimensions in mm)
107.75
16.015.24
|
|
PIN 1 |
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|
1.65 |
16.0 |
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|
5.8 |
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KEEP±OUT |
|
|
45.75 |
32.0 |
|
41.91 |
|
|
ZONES (x4) |
|||
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11.0 |
|
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3.81 |
OPTIONAL |
|
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16.0 |
NON±PLATED |
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||
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11.43 |
THRU±HOLES (x2) |
|
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||
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PLATED THRU±HOLES (x17) |
|
|
Figure 19. Package Footprint
NOTES:
1.Package is symmetrical.
2.Dimension of plated thru±holes indicates finished hole size after plating.
3.Non±plated thru±holes shown for optional access to heat sink mounting screws.
8 |
Motorola IGBT Device Data |
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
PACKAGE DIMENSIONS
|
|
A |
|
Q 4 PL |
|
|
U |
|
Y 2 PL |
|
|
|
|
F |
|
|
|
|
4 PL |
1 |
2 |
3 |
4 |
5 |
B P N |
H |
|
|
|
|
|
|
|
|
|
R |
17 16 |
15 |
14 |
13 12 |
11 10 |
9 |
8 |
7 |
6 |
|
S |
|
|
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|
G 6 PL |
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Z 5 PL |
M |
D 17 PL 
K
X 
C E
V
CASE 464A±01
ISSUE A
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETER.
3.LEAD LOCATION DIMENSIONS (ie: G, S, R, H, F...) ARE TO THE CENTER OF THE LEAD.
|
MILLIMETERS |
INCHES |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
±±± |
107.75 |
±±± |
4.242 |
B |
±±± |
45.75 |
±±± |
1.801 |
C |
16.37 |
17.64 |
0.644 |
0.694 |
D |
0.77 |
1.53 |
0.030 |
0.060 |
E |
12.49 |
13.51 |
0.492 |
0.532 |
F |
14.86 |
15.62 |
0.585 |
0.615 |
G |
3.43 |
4.19 |
0.135 |
0.165 |
H |
41.53 |
42.29 |
1.635 |
1.665 |
K |
29.99 |
31.01 |
1.181 |
1.221 |
L |
6.29 |
7.31 |
0.248 |
0.288 |
M |
1.59 |
2.61 |
0.063 |
0.103 |
N |
10.49 |
11.51 |
0.413 |
0.453 |
P |
31.49 |
32.51 |
1.240 |
1.280 |
Q |
2.00 |
2.60 |
0.079 |
0.103 |
R |
20.57 |
21.33 |
0.810 |
0.840 |
S |
15.62 |
16.38 |
0.615 |
0.645 |
U |
92.49 |
93.51 |
3.641 |
3.681 |
V |
104.17 |
105.44 |
4.101 |
4.151 |
W |
37.49 |
38.51 |
1.476 |
1.516 |
X |
15.37 |
16.64 |
0.605 |
0.655 |
Y |
5.25 |
5.75 |
0.207 |
0.227 |
Z |
11.05 |
11.81 |
0.435 |
0.465 |
L
W
Motorola IGBT Device Data |
9 |
MHPM6B10N120 MHPM6B15N120 MHPM6B25N120 SERIES
PACKAGE DIMENSIONS
|
|
A |
|
Q 4 PL |
|
|
U |
|
Y 2 PL |
|
|
|
|
F |
|
|
|
|
4 PL |
1 |
2 |
3 |
4 |
5 |
B P N |
H |
|
|
|
|
|
|
|
|
|
R |
17 16 |
15 |
14 |
13 12 |
11 10 |
9 |
8 |
7 |
6 |
|
S |
|
|
|
|
|
|
|
G 6 PL |
|
|
|
|
|
|
|
|
|
Z 5 PL |
M |
D 17 PL 
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETER.
3.LEAD LOCATION DIMENSIONS (ie: G, S, R, H, F...) ARE TO THE CENTER OF THE LEAD.
|
MILLIMETERS |
INCHES |
||
DIM |
MIN |
MAX |
MIN |
MAX |
A |
±±± |
107.75 |
±±± |
4.242 |
B |
±±± |
45.75 |
±±± |
1.801 |
C |
16.37 |
17.64 |
0.644 |
0.694 |
D |
0.77 |
1.53 |
0.030 |
0.060 |
E |
12.49 |
13.51 |
0.492 |
0.532 |
F |
14.86 |
15.62 |
0.585 |
0.615 |
G |
3.43 |
4.19 |
0.135 |
0.165 |
H |
41.53 |
42.29 |
1.635 |
1.665 |
K |
19.81 |
20.60 |
0.780 |
0.881 |
L |
6.29 |
7.31 |
0.248 |
0.288 |
M |
1.59 |
2.61 |
0.063 |
0.103 |
N |
10.49 |
11.51 |
0.413 |
0.453 |
P |
31.49 |
32.51 |
1.240 |
1.280 |
Q |
2.00 |
2.60 |
0.079 |
0.103 |
R |
20.57 |
21.33 |
0.810 |
0.840 |
S |
15.62 |
16.38 |
0.615 |
0.645 |
U |
92.49 |
93.51 |
3.641 |
3.681 |
V |
104.17 |
105.44 |
4.101 |
4.151 |
W |
37.49 |
38.51 |
1.476 |
1.516 |
X |
15.37 |
16.64 |
0.605 |
0.655 |
Y |
5.25 |
5.75 |
0.207 |
0.227 |
Z |
11.05 |
11.81 |
0.435 |
0.465 |
X |
C |
K |
|
|
E |
L |
|||
|
|
|||
|
|
|
||
|
V |
|
W |
|
|
|
|
CASE 464B±02
ISSUE A
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and 
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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10 |
◊ |
MHPM6B10N120/D |
|
Motorola IGBT Device Data |