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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Order this document by MHPM6B5A120D/D

Preliminary Data	Sheet	MHPM6B5A120D
Hybrid Power	Module	MHPM6B10A120D
Hybrid Power	Module	MHPM6B15A120D
Integrated Power Stage		MHPM6B15A120D
Integrated Power Stage		Motorola Preferred Devices
for 460 VAC Motor Drives		Motorola Preferred Devices

These modules integrate a 3±phase inverter in a single convenient package. They are designed for 1.0, 2.0 and 3.0 hp motor drive applications. The inverter incorporates advanced insulated gate bipolar transistors (IGBT) matched with free±wheeling diodes to give optimum performance. The top connector pins are designed for easy interfacing to the user's control board.

•Short Circuit Rated 10 μs @ 125°C

•Pin-to-Baseplate Isolation Exceeds 2500 Vac (rms)

•Compact Package Outline

•Access to Positive and Negative DC Bus

•UL Recognized

MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted)

5.0, 10, 15 AMP, 1200 V HYBRID POWER MODULES

PRELIMINARY

Rating		Symbol	Value	Unit

IGBT Reverse Voltage		VCES	1200	V
Gate-Emitter Voltage		VGES	± 20	V
Continuous IGBT Collector Current	5A120	ICmax	5.0	A
	10A120		10
	15A120		15

Peak Repetitive IGBT Collector Current (1)	5A120	I	10	A
	10A120	C(pk)	20
	10A120		20
	15A120		30

Continuous Diode Current	5A120	IFmax	5.0	A
	10A120		10
	15A120		15

Peak Repetitive Diode Current (1)	5A120	I	10	A
	10A120	F(pk)	20
	10A120		20
	15A120		30

IGBT Power Dissipation per die (TC = 25°C)	5A120	PD	43	W
	10A120		65
	15A120		82

Diode Power Dissipation per die (TC = 25°C)	5A120	PD	19	W
	10A120		38
	15A120		38

IGBT Power Dissipation per die (TC = 95°C)	5A120	PD	19	W
	10A120		29
	15A120		36

Diode Power Dissipation per die (TC = 95°C)	5A120	PD	8.3	W
	10A120		17
	15A120		17

Junction Temperature Range		TJ	± 40 to +150	°C
Short Circuit Duration (VCC = 600 V, TJ = 125°C)		tsc	10	msec
(1) 1.0 ms = 1.0% duty cycle

This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 2

Motorola, Inc. 1997

MAXIMUM DEVICE RATINGS (TJ = 25°C unless otherwise noted) Ð continued

Rating	Symbol	Value	Unit

Isolation Voltage	VISO	2500	V
Operating Case Temperature Range	TC	± 40 to +95	°C
Storage Temperature Range	Tstg	± 40 to +125	°C
Mounting Torque Ð Heat Sink Mounting Holes (#8 or M4 screws)	Ð	12	lb±in

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic		Symbol	Min	Typ	Max	Unit

Gate-Emitter Leakage Current (VCE = 0 V, VGE = ± 20 V)		IGES	Ð	Ð	± 20	μA
Collector-Emitter Leakage Current (VCE = 1200 V, VGE = 0 V)		ICES	Ð	6.0	100	μA
TJ = 125°C				2000
Gate-Emitter Threshold Voltage (VCE = VGE, IC = 1.0 mA)		VGE(th)	4.0	6.0	8.0	V
Collector-Emitter Breakdown Voltage (IC = 10 mA, VGE = 0 V)		V(BR)CES	1200	Ð	Ð	V
Collector-Emitter Saturation Voltage (IC = ICmax, VGE = 15 V)		VCE(SAT)	Ð	2.54	3.5	V
TJ = 125°C			Ð	2.33	Ð
Diode Forward Voltage (IF = IFmax, VGE = 0 V)		VF	Ð	1.67	2.0	V
TJ = 125°C			Ð	1.31	Ð
Input Capacitance (VCE = 10 V, VGE = 0 V, f = 1.0 Mhz)	5A120	Cies	Ð	930	Ð	pF
	10A120		Ð	1200	Ð
	15A120		Ð	2800	Ð

Input Gate Charge (VCE = 600 V, IC = ICmax, VGE = 15 V)	5A120	QT	Ð	31	Ð	nC
	10A120		Ð	65	Ð
	15A120		Ð	100	Ð

INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25°C)
Recommended Gate Resistor						W
Turn±On	5A120	RG(on)	Ð	270	Ð
	10A120		Ð	220	Ð
	15A120		Ð	220	Ð
Turn±Off		RG(off)	Ð	20	Ð
Turn-On Delay Time		td(on)				ns
(VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified)	5A120		Ð	255	Ð
	5A120		Ð	255	Ð
	10A120		Ð	350	Ð
	15A120		Ð	425	Ð

Rise Time		tr				ns
(VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified)	5A120		Ð	140	Ð
	5A120		Ð	140	Ð
	10A120		Ð	250	Ð
	15A120		Ð	225	Ð

Turn±Off Delay Time		td(off)				ns
(VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified)			Ð	170	Ð
Fall Time (VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified)		tf	Ð	290	500	ns
Turn-On Energy		E(on)				mJ
(VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified)	5A120		Ð	0.96	Ð
	5A120		Ð	0.96	Ð
	10A120		Ð	2.8	Ð
	15A120		Ð	4.0	Ð

Turn-Off Energy		E(off)				mJ
(VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified)	5A120		Ð	0.15	1.0
	5A120		Ð	0.15	1.0
	10A120		Ð	0.39	2.0
	15A120		Ð	0.52	2.5

Diode Reverse Recovery Time		trr				ns
(IF = IFmax, V = 600 V, RG as specified)	5A120		Ð	130	Ð
	10A120		Ð	170	Ð
	15A120		Ð	165	Ð

MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D	MOTOROLA
2

Characteristic	Symbol	Min	Typ	Max	Unit

INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 25°C) ± continued

Peak Reverse Recovery Current		Irrm				A
(IF = IFmax, V = 600 V, RG as specified)	5A120		Ð	5.0	Ð
	10A120		Ð	6.0	Ð
	15A120		Ð	9.6	Ð

Diode Stored Charge		Qrr				nC
(IF = IFmax, V = 600 V, RG as specified)	5A120		Ð	335	Ð
	10A120		Ð	575	Ð
	15A120		Ð	860	Ð

INDUCTIVE SWITCHING CHARACTERISTICS (TJ = 125°C)

Characteristic		Symbol	Min	Typ	Max	Unit

Turn±On Delay Time		td(on)				ns
(VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified)
	5A120		Ð	230	Ð
	10A120		Ð	315	Ð
	15A120		Ð	375	Ð

Rise Time		tr				ns
(VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified)
	5A120		Ð	130	Ð
	10A120		Ð	220	Ð
	15A120		Ð	235	Ð

Turn±Off Delay Time		td(off)				ns
(VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified)			Ð	176	Ð
Fall Time		tf				ns
(VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified)			Ð	676	Ð
Turn±On Energy		E(on)				mJ
(VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified)
	5A120		Ð	1.3	Ð
	10A120		Ð	3.9	Ð
	15A120		Ð	5.5	Ð

Turn±Off Energy		E(off)				mJ
(VCE = 600 V, IC = ICmax, VGE = 15 V, RG as specified)
	5A120		Ð	0.711	Ð
	10A120		Ð	1.290	Ð
	15A120		Ð	1.939	Ð

Diode Reverse Recovery Time		trr				ns
(IF = IFmax, V = 600 V, RG as specified)	5A120		Ð	190	Ð
	10A120		Ð	375	Ð
	15A120		Ð	310	Ð

Peak Reverse Recovery Current		Irrm				A
(IF = IFmax, V = 600 V, RG as specified)	5A120		Ð	8.4	Ð
	10A120		Ð	10	Ð
	15A120		Ð	15	Ð

Diode Stored Charge		Qrr				nC
(IF = IFmax, V = 600 V, RG as specified)	5A120		Ð	825	Ð
	10A120		Ð	2100	Ð
	15A120		Ð	2500	Ð

THERMAL CHARACTERISTICS (Each Die)

Thermal Resistance Ð IGBT	5A120	RqJC	Ð	2.30	2.88	°C/W
	10A120		Ð	1.54	1.92
	15A120		Ð	1.21	1.52

Thermal Resistance Ð Free±Wheeling Diode	5A120	RqJC	Ð	5.28	6.60	°C/W
	10A120		Ð	2.61	3.26
	15A120		Ð	2.61	3.26

MOTOROLA	MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D
	3

						TYPICAL CHARACTERISTICS
	2.0		VGE = 18 V						2.0			VGE = 18 V			12 V
			VGE = 18 V			12 V						VGE = 18 V			12 V
						12 V
	1.5								1.5					15 V
				15 V										15 V
Cmax				15 V				Cmax
Cmax	1.0							Cmax	1.0
/I								/I
C								C
I								I
	0.5								0.5						9.0 V
	0.5								0.5
						9.0 V
	0								0
	0	1.0	2.0	3.0	4.0	5.0	6.0		0		1.0	2.0	3.0	4.0	5.0	6.0
				VCE (V)									VCE (V)
		Figure 1. Normalized IC versus VCE, TJ = 25°C							Figure 2. Normalized IC versus VCE, TJ = 125°C
	2.5								1000
	2.0								800		toff @ 125°C
	2.0								800
			IF (NORMALIZED), 125°C					(ns)			t @ 125°C
								(ns)			f
											f
Fmax	1.5							f	600
								off
								, t
/I								t
F	1.0							,	400		toff
I	1.0							d(off)	400		toff
								t
	0.5				IF (NORMALIZED)				200		tf				td @ 125°C
	0.5				IF (NORMALIZED)				200						td
															td
	0								0
	0	0.5	1.0	1.5		2.0	2.5		0		0.2	0.4	0.6	0.8	1.0	1.2
				VF (V)									IC/ICmax
			Figure 3. IF versus VF							Figure 4. td(off), tf, toff versus Normalized IC
	1400								10
								)
								r
	1200							t
	1200							ON
								ON
t	1000	toff @ 125°C						NORMALIZED	1.0	ton
(ns)	800	tf @ 125°C								td(on)
off	800									td(on)
off								(ALL
t,								(ALL
,
f	600
d(off)	600	toff	td @ 125°C					t,			r
		toff						on		t
t	400	t						r
t		t						t
		f						,
	200							d(on)							@ 125°C
	200
		td						t
	0	td							0.1
	0								0.1
	0	20	40	60	80	100	120		0		0.2	0.4	0.6	0.8	1.0	1.2
				RG (W)									IC/ICmax
		Figure 5. td(off), tf, toff, versus RG									Figure 6. td(on), tr, ton versus IC

MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D	MOTOROLA
4

						TYPICAL CHARACTERISTICS
	10									6.0							Eon @ 125°C
)						ton											Eon @ 125°C
r
t
ON						td(on)				5.0
NORMALIZED						tr		(mJ)		4.0							Eon
	1.0								off	3.0
	1.0							E		3.0
(ALL								,
(ALL									on								Eoff @ 125°C
on								E		2.0
, t
r
, t										1.0
d(on)						@ 125°C				1.0							Eoff
d(on)						@ 125°C											Eoff
t
	0.1	0.5	1.0	1.5	2.0		3.0			0	2.0	4.0	6.0	8.0
	0	0.5	1.0	1.5	2.0	2.5	3.0			0	2.0	4.0	6.0	8.0	10	12	14	16
			RG/RG (RECOMMENDED)											IC, (A)
		Figure 7. td(on), tr, ton versus Normalized RG										Figure 8. Eon, Eoff versus IC
	1.6									2.0
	1.4					Eoff, 125°C	WITH										Eon, 125°C
	1.2						WITH		)	1.5							Eon
	1.2						on		G(on)	1.5							Eon
	1.0						E		G(on)
	1.0						(NORMALIZED FOR		RECOMMENDED R
(mJ)	0.8									1.0
off	0.8									1.0
off
E	0.6					Eoff
						Eoff
	0.4									0.5
							on
	0.2						E
	0.2
	0	20	40	60	80	100				0					1.5		2.0	2.5
	0	20	40	60	80	100	120			0		0.5	1.0		1.5		2.0	2.5
				RG (W)									RG/RG (RECOMMENDED)

Figure 9. Eoff versus RG(off) at Rated IC

Figure 10. Normalized Eon versus Normalized

RG(on)

t rr , (NORMALIZED TO 1), Irr, (NORMALIZED TO 10)

10					Irr	(pF/A)	1000
						(pF/A)

						Cmax	100			Cies
						I	100
						TO
1.0					trr	NORMALIZED	10			Coes
										Coes
						CAPACITANCE,
0.1						CAPACITANCE,	0.1			Cres
							1.0
					@ 125°C
0	0.2	0.4	0.6	0.8	1.0	1.2	0	20	40	60	80	100
			IF/IFmax							VCE (V)

Figure 11. trr, Irr versus Normalized IF

Figure 12. Capacitance Variation

MOTOROLA	MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D
	5

					TYPICAL CHARACTERISTICS
15	5A120		10A120					100
	5A120		10A120
											15A120
						15A120					10A120
10								10			10A120
10								10			5A120
(V)											5A120
(V)								(A)
GE								C
V								I
5.0								1.0	+VGE = 15 V
									±VGE = 0 V
						VCC = 500			RG = 220 W
									TJ = 25°C
0								0.1
0	20	40	60	80	100	120	140	0	200	400	600	800	1000	1200	1400
			QG (nC)								VCE (V)

Figure 13. VGE versus QG	Figure 14. Reverse Biased Safe
	Operating Area

	1.0
		10A120 DIODE
	0.8	15A120 DIODE
		15A120 DIODE					15A120 IGBT
r(t)							15A120 IGBT
r(t)		5A120 DIODE					10A120 IGBT
NORMALIZED	0.6	5A120 DIODE					10A120 IGBT
	0.6
		15A120 IGBT
	0.4	10A120 IGBT
		10A120 IGBT
	0.2	5A120 IGBT
	0.2
	0	0.01	0.1	1.0	10	100	1,000	10,000
		0.01	0.1	1.0	10	100	1,000	10,000

TIME (ms)

Figure 15. Normalized r(t)

td(on)

OUTPUT, Vout

INVERTED

INPUT, Vin

10%

			+15 V
ton		toff	RG(on)
ton		toff
tr	td(off)	tf	MC33153
90%		90%
10%			RG(off)
		90%
50%		50%

PULSE WIDTH

Figure 16. Switching Waveforms

Figure 17. Typical Gate Drive Circuit

MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D	MOTOROLA
6

APPLICATION INFORMATION

These modules are designed to be used as the power stage of a three±phase AC induction motor drive. They may be used for up to 230 VAC applications. Switching frequencies up to 10 kHz have been considered in the design.

Gate resistance recommendations have been listed. Separate turn±on and turn±off resistors are listed, to be used in a circuit resembling Figure 17. All switching characteristics are given based on following these recommendations, but appropriate graphs are shown for operation with different gate resistance. In order to equalize across the three different module ratings, a normalization process was used. Actual typical values are listed in the second section of this specification sheet, ªElectrical Specifications,º but many of the graphs are given in normalized units.

The first three graphs, the DC characteristics, are normalized for current. The devices are designed to operate the same at rated maximum current (10 and 20 A). The curves extend to ICpk, the maximum allowable instantaneous current.

The next graph, turn±off times versus current, is again normalized to the rated maximum current. The following graph, turn±off times versus RG(off), is intentionally not normalized, as all three modules behave similarly during turn±off.

Turn±on times have been normalized. Again, the graph showing variation due to current has been normalized for rated maximum current. The graph showing variation due to gate resistance normalizes against the recommended RG(on) for each module. In addition, the times are normalized to tr at the appropriate temperature. For example, td(on) for a 10 A module operating at 125°C at 4.0 A can be found by multiplying the typical tr for a 10 A module at 125°C (220 ns) by the value shown on the graph at a normalized current of 0.4 (1.4) to get 308 ns. The most salient features demonstrated by these graphs are the general trends: rise time is a

larger fraction of total turn±on time at 125°C, and in general, larger gate resistance results in slower switching.

Graphs of switching energies follow a similar structure. The first of these graphs, showing variation due to current, is not normalized, as any of these devices operating within its limits follows the same trend. Eoff does not need to be

normalized to show variation with RG(off), as all three are specified with the same nominal resistance. Eon, however,

has been appropriately normalized. Gate resistance has

been normalized to the specified RG(on). In order to show the effect of elevated temperature, all energies were normalized

to Eon at 25°C using the recommended RG(on).

Reverse recovery characteristics are also normalized. IF is normalized to rated maximum current. Irrm is normalized so that at maximum current at either 25°C or 125°C, the graph

indicates ª10º, while t is normalized to be ª1º at maximum rr

current at either temperature.

Capacitance values are normalized for ICmax. Due to poor scaling, gate charge and thermal characteristics are shown separately for each module.

Many issues must be considered when doing PCB layout. Figure 19 shows the footprint of a module, allowing for reasonable tolerances. A polarizing post is provided near pin 1 to ensure that the module is properly inserted during final assembly. When laying out traces, two issues are of primary importance: current carrying capacity and voltage clearance. Many techniques may be used to maximize both, including using traces on both sides of the PCB to double total copper thickness, providing cut±outs in high±current traces near high±voltage pins, and even removing portions of the board to increase ªover±the±surfaceº creapage distance. Some additional advantage may be gained by potting the entire board assembly in a good dielectric. Consult appropriate regulatory standards, such as UL 840, for more details on high±voltage creapage and clearance.

1	2	3	4	5	6	7	8
	Q1		D1	Q3	D3	Q5	D5
			D1		D3		D5
	Q2		D2	Q4	D4	Q6	D6

Figure 18. Schematic of Internal Circuit, Showing Package Pin±Out

MOTOROLA	MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D
	7

RECOMMENDED PCB LAYOUT VIEW OF BOARD FROM HEAT SINK (All Dimensions Typical)

NON±PLATED THRU±HOLE

0.140

0.175

0.265

0.625

0.270

PIN 1

PLATED THRU±HOLES

(x16)

0.065

PACKAGE ªSHADOWº

0.450

0.625	0.175	0.175
0.625

1.350

1.530

KEEP±OUT ZONES (x4)

0.270

0.250

0.250 3.500

OPTIONAL NON±PLATED

THRU±HOLES FOR ACCESS

TO HEAT SINK MOUNTING

SCREWS (x2)

Figure 19. Package Footprint

NOTES:

1.Package is symmetrical, except for a polarizing plastic post near pin 1, indicated by a non±plated thru±hole in the footprint.

2.Dimension of plated thru±holes indicates net size after plating.

3.Access holes for mounting screws may or may not be necessary depending on assembly plan for finished product.

MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D	MOTOROLA
8

PACKAGE DIMENSIONS

			3.500
			3.000
1	2	3	4	5	6	7	8
0.154

1.000 1.530

0.115

1.350

16	15	14	13	12	11	10	9

0.250

0.050

0.475

0.150

0.650 0.350

PRELIMINARY

MOTOROLA	MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D
	9

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ªTypicalº parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including ªTypicalsº must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

	Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;	JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4±32±1,
P.O. Box 5405, Denver, Colorado 80217. 303±675±2140 or 1±800±441±2447	Nishi±Gotanda, Shinagawa±ku, Tokyo 141, Japan. 81±3±5487±8488
Mfax : RMFAX0@email.sps.mot.com ± TOUCHTONE 602±244±6609	ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

± US & Canada ONLY 1±800±774±1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852±26629298

INTERNET: http://motorola.com/sps

◊	MHPM6B5A120D/D
MHPM6B5A120D MHPM6B10A120D MHPM6B15A120D	MOTOROLA
10

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