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RHRU5040

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S E M I C O N D U C T O R

April 1995

RHRU5040, RHRU5050, RHRU5060

50A, 400V - 600V Hyperfast Diodes

Features			Package
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . .		. <45ns	JEDEC STYLE TO-218
•	Operating Temperature . . . . . . . . . . . . . . . . . . . .	+175oC	ANODE
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . .		. . 600V
•	Avalanche Energy Rated		CATHODE
•	Planar Construction		(FLANGE)
•	Planar Construction

Applications

•Switching Power Supplies

•Power Switching Circuits

• General Purpose					Symbol
Description					K
RHRU5040, RHRU5050 and RHRU5060 (TA49065) are
hyperfast	diodes	with	soft	recovery	characteristics
(tRR < 45ns). They have half the recovery time of ultrafast
diodes and are silicon nitride passivated ion-implanted epi-
taxial planar construction.					A

These devices are intended for use as freewheeling/clamping diodes and rectiﬁers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

PACKAGING AVAILABILITY

PART NUMBER	PACKAGE	BRAND

RHRU5040	TO-218	RHRU5040

RHRU5050	TO-218	RHRU5050

RHRU5060	TO-218	RHRU5060

NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings	T = +25oC, Unless Otherwise Speciﬁed
	C
		RHRU5040	RHRU5050	RHRU5060	UNITS
Peak Repetitive Reverse Voltage . . . .	. . . . . . . . . . . . . VRRM	400	500	600	V
Working Peak Reverse Voltage . . . . . .	. . . . . . . . . . . . .VRWM	400	500	600	V
DC Blocking Voltage . . . . . . . . . . . . . . .	. . . . . . . . . . . . . . VR	400	500	600	V
Average Rectiﬁed Forward Current . . . .	. . . . . . . . . . . . IF(AV)	50	50	50	A
(TC = +93oC)
Repetitive Peak Surge Current . . . . . . .	. . . . . . . . . . . . . IFSM	100	100	100	A
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . .	. . . . . . . . . . . . . IFSM	500	500	500	A
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . .	. . . . . . . . . . . . . . PD	150	150	150	W
Avalanche Energy (L = 40mH). . . . . . . .	. . . . . . . . . . . . EAVL	40	40	40	mj
Operating and Storage Temperature . . .	. . . . . . . . . TSTG, TJ	-65 to +175	-65 to +175	-65 to +175	oC

Copyright © Harris Corporation 1995				File Number	3919.1

7-89

Speciﬁcations RHRU5040, RHRU5050, RHRU5060

Electrical Speciﬁcations TC = +25oC, Unless Otherwise Speciﬁed

				TEST						RHRU5040				RHRU5050				RHRU5060
				TEST
SYMBOL				CONDITION					MIN		TYP	MAX	MIN		TYP	MAX	MIN		TYP	MAX	UNITS

VF		IF = 50A, TC = +25oC							-		-	2.1	-		-	2.1	-		-	2.1	V
		I = 50A, T			C	= +150oC			-		-	1.7	-		-	1.7	-		-	1.7	V
		F			C
I	R	V	R	= 400V, T			C	= +25oC	-		-	500	-		-	-	-		-	-	μA
	R		R				C

		V	R	= 500V, T			C	= +25oC	-		-	-	-		-	500	-		-	-	μA
			R				C

		V	R	= 600V, T			C	= +25oC	-		-	-	-		-	-	-		-	500	μA
			R				C

I	R	V	R	= 400V, T			C	= +150oC	-		-	1.5	-		-	-	-		-	-	mA
	R		R				C

		V	R	= 500V, T			C	= +150oC	-		-	-	-		-	1.5	-		-	-	mA
			R				C

		V	R	= 600V, T			C	= +150oC	-		-	-	-		-	-	-		-	1.5	mA
			R				C

tRR		IF = 1A, dIF/dt = 100A/μs							-		-	45	-		-	45	-		-	45	ns
		IF = 50A, dIF/dt = 100A/μs							-		-	50	-		-	50	-		-	50	ns
tA		IF = 50A, dIF/dt = 100A/μs							-		25	-	-		25	-	-		25	-	ns
tB		IF = 50A, dIF/dt = 100A/μs							-		20	-	-		20	-	-		20	-	ns
QRR		IF = 50A, dIF/dt = 100A/μs							-		65	-	-		65	-	-		65	-	nC
CJ		VR = 10V, IF = 0A							-		140	-	-		140	-	-		140	-	pF
RθJC									-		-	1.0	-		-	1.0	-		-	1.0	oC/W

DEFINITIONS

VF = Instantaneous forward voltage (pw = 300μs, D = 2%).

IR = Instantaneous reverse current.

tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2).

tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).

RθJC = Thermal resistance junction to case.

EAVL = Controlled avalanche energy (See Figures 10 and 11). pw = pulse width.

D = duty cycle.

V1 AMPLITUDE CONTROLS IF
V2 AMPLITUDE CONTROLS dIF/dt				+V3
L	= SELF INDUCTANCE OF			+V3
1	R4 + LLOOP	R1	Q2	t1 ³ 5tA(MAX)
		R1	Q2	t1 ³ 5tA(MAX)

				t2 > tRR
	Q1			t3 > 0
	Q1			L1 £ tA(MIN)
	+V1			L1 £ tA(MIN)

0		R4		10	dIF		tRR
0		LLOOP		IF	dIF		tRR
	t2	LLOOP		IF	dt	tA	tB
t1	R2		DUT	0
t1		Q4	DUT
		Q4					0.25 IRM
							0.25 IRM
	t3						IRM
0	C1	R4					VR
0	Q3						VR
	Q3
-V2	R3	-V4
						VRM

FIGURE 1. tRR TEST CIRCUIT

FIGURE 2. tRR WAVEFORMS AND DEFINITIONS

7-90

					RHRU5040, RHRU5050, RHRU5060
Typical Performance Curves
	300								3000			+175oC
									1000			+175oC
									1000
FORWARD CURRENT (A)	100							REVERSE CURRENT (μA)
									100
		+100oC										+100oC
									10
	10	+175oC		+25oC
	10								1
									1
												+25oC
,								,	0.1			+25oC
F								R
I								I
	1								0.01
	0	0.5	1	1.5	2	2.5	3		0	100	200	300	400	500	600
			VF, FORWARD VOLTAGE (V)								VR, REVERSE VOLTAGE (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD								FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
		VOLTAGE DROP								VOLTAGE
	60					TC = +25oC			150					TC = +100oC
	60								150
(ns)	50				tRR			(ns)	125
(ns)					tRR			(ns)					tRR
TIMES	40							TIMES	100
TIMES								TIMES
RECOVERY	30				tA			RECOVERY	75
					tA								tA
	20				tB				50				tB
					tB								tB
t,	10							t,	25
	10								25
	0								0
	1				10		50		1			10			50
			IF , FORWARD CURRENT (A)								IF , FORWARD CURRENT (A)
FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD								FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD
		CURRENT AT +25oC								CURRENT AT +100oC
	250					TC = +175oC		(A)	50
	250							(A)
(ns)	200							CURRENT	40
	200				tRR
					tRR						SQ. WAVE		DC
t, RECOVERY TIMES	150							AVERAGE FORWARD	30
	150
	100								20
	100
		tA
	50	tB							10
								,
								F(AV)	0
	0							I
															175
									25	50	75	100	125	150
	1				10		50		25	50	75	100	125	150
	1				10		50				TC , CASE TEMPERATURE (oC)
			IF , FORWARD CURRENT (A)								TC , CASE TEMPERATURE (oC)
FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD									FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
		CURRENT AT +175oC
							7-91

	RHRU5040, RHRU5050, RHRU5060
Typical Performance Curves (Continued)
	350
(pF)	300
(pF)
CAPACITANCE	250
	200
	150
, JUNCTION	150
	100
	50
J
C
C
	0
	0		50	100	150	200
			VR , REVERSE VOLTAGE (V)
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Test Circuit and Waveforms
IMAX = 1A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI2 [VAVL/(VAVL - VDD)]
Q1 AND Q2 ARE 1000V MOSFETs		L	R
Q1			R	+
				VDD
130Ω	1MΩ
	1MΩ
		DUT
Q2						VAVL
12V
		CURRENT			IL	IL
130Ω		SENSE			IL	IL
				I V
				VDD
				-
12V					t0	t1	t2	t
					t0	t1	t2	t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT				FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
					WAVEFORMS
				7-92

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