harris / HF_SDIOD / RHRU5070

Features

Package

• Hyperfast with Soft Recovery . . . . . . . . . . . . . . .

. <75ns

JEDEC STYLE TO-218

•

Operating Temperature . . . . . . . . . . . . . . . . . . . .

+175oC

•

Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . .

. 1000V

•

Avalanche Energy Rated

ANODE

CATHODE

•

Planar Construction

(FLANGE)

Description

RHRU5070, RHRU5080, RHRU5090 and RHRU50100

Symbol

(TA49066) are hyperfast diodes with soft recovery character-

istics (tRR < 75ns). They have half the recovery time of

K

ultrafast diodes and are silicon nitride passivated ion-

implanted epitaxial planar construction.

These devices are intended for use as freewheeling/clamp-

ing diodes and rectifiers in a variety of switching power sup-

plies and other power switching applications. Their low

stored charge and hyperfast soft recovery minimize ringing

and electrical noise in many power switching circuits reduc-

A

ing power loss in the switching transistors.

PACKAGING AVAILABILITY

PART NUMBER

PACKAGE

BRAND

RHRU5070

TO-218

RHRU5070

RHRU5080

TO-218

RHRU5080

RHRU5090

TO-218

RHRU5090

RHRU50100

TO-218

RHRU50100

NOTE: When ordering, use the entire part number.

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified

RHRU5070

RHRU5080

RHRU5090

RHRU50100 UNITS

Peak Repetitive Reverse Voltage . . . . . . . . .

. . . . . . . . . . . . . . . . . . .

VRRM

700

800

900

1000

V

Working Peak Reverse Voltage. . . . . . . . . . .

. . . . . . . . . . . . . . . . . .

VRWM

700

800

900

1000

V

DC Blocking Voltage .

.

. . . . . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . .

. . VR

700

800

900

1000

V

Average Rectified Forward Current . . . . . . . .

. . . . . . . . . . . . . . . . . . .

IF(AV)

50

50

50

50

A

(TC = +65oC)

Repetitive Peak Surge Current . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . .

.IFSM

100

100

100

100

A

(Square Wave, 20kHz)

Nonrepetitive Peak Surge Current . . . . . . . .

. . . . . . . . . . . . . . . . . . .

.IFSM

500

500

500

500

A

(Halfwave, 1 Phase, 60Hz)

Maximum Power Dissipation . . . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . .

. . PD

150

150

150

150

W

Avalanche Energy (L = 40mH) . . . . . . . . . . .

. . . . . . . . . . . . . . . . . . .

EAVL

40

40

40

40

mj

Operating and Storage Temperature. . . . . . .

. . . . . . . . . . . . . . . . TSTG, TJ -65 to +175

-65 to +175

-65 to +175

-65 to +175

oC

Copyright © Harris Corporation 1995

File Number

3665.1

RHRU5070

RHRU5080

RHRU5090

RHRU50100

SYMBOL

TEST CONDITION

MIN

TYP

MAX

MIN

TYP

MAX

MIN

TYP

MAX

MIN

TYP

MAX

UNITS

V

I

F

= 50A, T

C

= +25oC

-

-

3.0

-

-

3.0

-

-

3.0

-

-

3.0

V

F

IF = 50A, TC = +150oC

-

-

2.5

-

-

2.5

-

-

2.5

-

-

2.5

V

I

R

V

R

= 700V, T

= +25oC

-

-

500

-

-

-

-

-

-

-

-

-

μA

C

V

R

= 800V, T

= +25oC

-

-

-

-

-

500

-

-

-

-

-

-

μA

C

V

R

= 900V, T

= +25oC

-

-

-

-

-

-

-

-

500

-

-

-

μA

C

VR = 1000V, TC = +25oC

-

-

-

-

-

-

-

-

-

-

-

500

μA

I

R

V

R

= 700V, T

= +150oC

-

-

3.0

-

-

-

-

-

-

-

-

-

mA

C

V

R

= 800V, T

= +150oC

-

-

-

-

-

3.0

-

-

-

-

-

-

mA

C

V

R

= 900V, T

= +150oC

-

-

-

-

-

-

-

-

3.0

-

-

-

mA

C

V

R

= 1000V, T

= +150oC

-

-

-

-

-

-

-

-

-

-

-

3.0

mA

C

tRR

IF = 1A, dIF/dt = 100A/μs

-

-

75

-

-

75

-

-

75

-

-

75

ns

IF = 50A, dIF/dt = 100A/μs

-

-

95

-

-

95

-

-

95

-

-

95

ns

tA

IF = 50A, dIF/dt = 100A/μs

-

54

-

-

54

-

-

54

-

-

54

-

ns

tB

IF = 50A, dIF/dt = 100A/μs

-

32

-

-

32

-

-

32

-

-

32

-

ns

QRR

IF = 50A, dIF/dt = 100A/μs

-

125

-

-

125

-

-

125

-

-

125

-

nC

CJ

VR = 10V, IF = 0A

-

150

-

-

150

-

-

150

-

-

150

-

pF

RθJC

-

-

1.0

-

-

1.0

-

-

1.0

-

-

1.0

oC/W

V1 AMPLITUDE CONTROLS IF

+V3

V2 AMPLITUDE CONTROLS dIF/dt

Q2

t1 ³ 5tA(MAX)

L1 = SELF INDUCTANCE OF

R1

t2 > tRR

R4 + LLOOP

Q1

t3 > 0

+V1

L1

£ tA(MIN)

0

R4

10

LLOOP

dIF

tRR

t2

IF

R2

dt

tA

tB

t1

0

Q4

DUT

t3

0.25 IRM

IRM

C1

R4

0

Q3

-V2

R3

-V4

VR

VRM

FIGURE 1. tRR TEST CIRCUIT

FIGURE 2. WAVEFORMS AND DEFINITIONS

FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD

FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLT-

VOLTAGE DROP

AGE

100

TC = +25oC

200

TC = +100oC

(ns)-

80

tRR

(ns)-

150

tRR

TIMES

60

TIMES

RECOVERY

tA

RECOVERY

100

tA

40

tB

t,

10

t,

50

tB

0

50

0

1

10

1

10

50

IF , FORWARD CURRENT - (A)

IF , FORWARD CURRENT - (A)

FIGURE 5. TYPICAL tRR , tA AND tB CURVES vs FORWARD

FIGURE 6. TYPICAL tRR , tA AND tB CURVES vs FORWARD

CURRENT AT +25oC

CURRENT AT +100oC

400

T

C

= +175oC

50

- (A)

(ns)-TIMESRECOVERYt,

300

CURRENTFORWARDAVERAGE

40

DC

tRR

30

200

SQ. WAVE

20

tA

100

tB

10

0

(AV),

0

50

75

100

125

150

175

1

10

50

F

25

I

IF , FORWARD CURRENT - (A)

TC , CASE TEMPERATURE - (oC)

FIGURE 7. TYPICAL tRR , tA AND tB CURVES vs FORWARD

FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES