S E M I C O N D U C T O R
April 1995
RHRG50120
50A, 1200V Hyperfast Diode
Features
•Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <85ns
•Operating Temperature . . . . . . . . . . . . . . . . . . . . +175oC
•Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
•Avalanche Energy Rated
•Planar Construction
Applications
•Switching Power Supplies
•Power Switching Circuits
•General Purpose
Description
The RHRG50120 (TA49100) are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
PACKAGING AVAILABILITY
PART NUMBER |
PACKAGE |
BRAND |
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RHRG50120 |
TO-247 |
RHRG50120 |
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NOTE: When ordering, use the entire part number.
Package
JEDEC STYLE TO-247
ANODE
CATHODE
CATHODE (BOTTOM
SIDE METAL)
Symbol
K |
A |
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified |
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RHRG50120 |
UNITS |
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . VRRM |
1200 |
V |
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Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . VRWM |
1200 |
V |
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DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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VR |
1200 |
V |
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Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . IF(AV) |
50 |
A |
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(TC = 50oC) |
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Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . IFSM |
100 |
A |
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(Square Wave, 20kHz) |
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Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . IFSM |
500 |
A |
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(Halfwave, 1 Phase, 60Hz) |
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Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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PD |
150 |
W |
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Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . EAVL |
50 |
mj |
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Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
T |
, T |
J |
-65 to +175 |
oC |
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STG |
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Copyright © Harris Corporation 1995 |
File Number 3947.1 |
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7-39 |
Specifications RHRG50120
Electrical Specifications |
TC = +25oC, Unless Otherwise Specified |
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LIMITS |
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SYMBOL |
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TEST CONDITION |
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TYP |
MAX |
UNITS |
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V |
I |
F |
= 50A, T |
C |
= +25oC |
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3.2 |
V |
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F |
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IF |
= 50A, TC = +150oC |
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2.6 |
V |
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I |
V |
R |
= 1200V, T |
C |
= +25oC |
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500 |
μA |
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R |
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VR = 1200V, TC = +150oC |
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1.0 |
mA |
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tRR |
IF = 1A, dIF/dt = 100A/μs |
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85 |
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IF = 50A, dIF/dt = 100A/μs |
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100 |
ns |
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tA |
IF = 50A, dIF/dt = 100A/μs |
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50 |
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tB |
IF = 50A, dIF/dt = 100A/μs |
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40 |
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QRR |
IF = 50A, dIF/dt = 100A/μs |
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240 |
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nC |
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CJ |
VR = 10V, IF = 0A |
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150 |
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pF |
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R |
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- |
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1.0 |
oC/W |
θJC |
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DEFINITIONS
VF = Instantaneous forward voltage (pw = 300μs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy. (See Figures 10 and 11). pw = pulse width.
D = duty cycle.
V1 AMPLITUDE CONTROLS IF |
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V2 AMPLITUDE CONTROLS dIF/dt |
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+V3 |
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L |
= SELF INDUCTANCE OF |
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1 |
R4 + LLOOP |
R1 |
Q2 |
t1 ³ 5tA(MAX) |
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t2 > tRR |
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Q1 |
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t3 > 0 |
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L1 £ tA(MIN) |
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+V1 |
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0 |
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R4 |
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10 |
dIF |
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tRR |
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LLOOP |
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IF |
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t2 |
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dt |
tA |
tB |
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t1 |
R2 |
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DUT |
0 |
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Q4 |
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0.25 IRM |
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t3 |
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IRM |
0 |
C1 |
R4 |
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VR |
Q3 |
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-V2 |
R3 |
-V4 |
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VRM
FIGURE 1. tRR TEST CIRCUIT |
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS |
7-40
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RHRG50120 |
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Typical Performance Curves |
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300 |
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3000 |
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1000 |
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+175oC |
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(A) |
100 |
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μA) |
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FORWARD CURRENT |
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+100oC |
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CURRENT ( |
100 |
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+100oC |
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10 |
+175oC |
+25oC |
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10 |
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1 |
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REVERSE, |
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F |
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R |
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+25 C |
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I |
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I |
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1 |
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0.1 |
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0 |
1 |
2 |
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4 |
5 |
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0 |
200 |
400 |
600 |
800 |
1000 |
1200 |
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VF, FORWARD VOLTAGE (V) |
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VR, REVERSE VOLTAGE (V) |
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FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD |
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FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE |
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VOLTAGE DROP |
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100 |
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TC = +25oC |
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250 |
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TC = +100oC |
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(ns) |
80 |
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tRR |
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(ns) |
200 |
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tRR |
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TIMES |
60 |
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TIMES |
150 |
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t, RECOVERY |
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tA |
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t, RECOVERY |
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tA |
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40 |
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tB |
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100 |
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tB |
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20 |
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50 |
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0 |
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0 |
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1 |
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10 |
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50 |
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10 |
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50 |
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IF , FORWARD CURRENT (A) |
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IF , FORWARD CURRENT (A) |
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FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD |
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FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD |
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CURRENT AT +25oC |
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CURRENT AT +100oC |
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400 |
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TC = +175oC |
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(A) |
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AVERAGE FORWARD CURRENT |
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DC |
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t, RECOVERY TIMES (ns) |
300 |
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40 |
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tRR |
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30 |
SQ. WAVE |
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200 |
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tA |
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100 |
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tB |
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0 |
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F(AV) |
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10 |
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0 |
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1 |
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125 |
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25 |
50 |
75 |
100 |
150 |
175 |
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IF , FORWARD CURRENT (A) |
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T |
, CASE TEMPERATURE (oC) |
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C |
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FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD |
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FIGURE 8. CURRENT DERATING CURVE |
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CURRENT AT +175oC |
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7-41 |
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RHRG50120 |
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Typical Performance Curves (Continued) |
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600 |
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(pF) |
500 |
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CAPACITANCE |
400 |
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300 |
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, JUNCTION |
200 |
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100 |
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J |
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C |
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0 |
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0 |
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50 |
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VR , REVERSE VOLTAGE (V) |
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FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE |
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Test Circuit and Waveforms |
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IMAX = 1A |
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L = 40mH |
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R < 0.1Ω |
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EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] |
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Q1 AND Q2 ARE 1000V MOSFETs |
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L |
R |
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Q1 |
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VDD |
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130Ω |
1MΩ |
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DUT |
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VAVL |
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Q2 |
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12V |
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CURRENT |
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IL |
IL |
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130Ω |
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SENSE |
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I |
V |
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VDD |
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- |
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12V |
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t0 |
t1 |
t2 |
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FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT |
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE |
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WAVEFORMS |
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7-42 |
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