S E M I C O N D U C T O R
April 1995
RHRU10040, RHRU10050, RHRU10060
100A, 400V - 600V Hyperfast Diodes
Features
•Hyperfast with Soft Recovery . . . . . . . . . . . . . . . < 50ns
•Operating Temperature . . . . . . . . . . . . . . . . . . . . +175oC
•Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . . 600V
•Avalanche Energy Rated
•Planar Construction
Applications
•Switching Power Supplies
•Power Switching Circuits
•General Purpose
Description
RHRU10040, RHRU10050 and RHRU10060 (TA49069) are hyperfast diodes with soft recovery characteristics (tRR < 50ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, reducing power loss in the switching transistors.
PACKAGING AVAILABILITY
PART NUMBER |
PACKAGE |
BRAND |
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RHRU10040 |
TO-218 |
RHRU10040 |
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RHRU10050 |
TO-218 |
RHRU10050 |
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RHRU10060 |
TO-218 |
RHRU10060 |
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NOTE: When ordering, use the entire part number.
Package
JEDEC STYLE TO-218
ANODE
CATHODE (FLANGE) 
Symbol
K |
A |
Absolute Maximum Ratings |
TC = +25oC |
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RHRU10040 |
RHRU10050 |
RHRU10060 |
UNITS |
Peak Repetitive Reverse Voltage. . . . . |
. . . . . . . . . . . . .VRRM |
400 |
500 |
600 |
V |
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Working Peak Reverse Voltage . . . . . . |
. . . . . . . . . . . . VRWM |
400 |
500 |
600 |
V |
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DC Blocking Voltage. . . . . . . . . . . . . . . . |
. . . . . . . . . . . . . . |
VR |
400 |
500 |
600 |
V |
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Average Rectified Forward Current . . . . |
. . . . . . . . . . . . IF(AV) |
100 |
100 |
100 |
A |
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(TC = +60.8oC) |
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Repetitive Peak Surge Current. . . . . . . . |
. . . . . . . . . . . . .IFSM |
200 |
200 |
200 |
A |
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(Square Wave, 20kHz) |
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Nonrepetitive Peak Surge Current . . . . . |
. . . . . . . . . . . . .IFSM |
1000 |
1000 |
1000 |
A |
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(Halfwave, 1 Phase, 60Hz) |
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Maximum Power Dissipation . . . . . . . . . |
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PD |
210 |
210 |
210 |
W |
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Avalanche Energy . . . . . . . . . . . . . . . . . |
. . . . . . . . . . . . EAVL |
50 |
50 |
50 |
mj |
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(L = 40mH) |
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Operating and Storage Temperature . . . |
. . . . . . . . . T |
, T |
J |
-65 to +175 |
-65 to +175 |
-65 to +175 |
oC |
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STG |
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Copyright © Harris Corporation 1995
File Number 3572.2
7-112
Specifications RHRU10040, RHRU10050, RHRU10060
Electrical Specifications TC = +25oC, Unless Otherwise Specified
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TEST |
RHRU10040 LIMITS |
RHRU10050 LIMITS |
RHRU10060 LIMITS |
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SYMBOL |
CONDITION |
MIN |
TYP |
MAX |
MIN |
TYP |
MAX |
MIN |
TYP |
MAX |
UNITS |
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VF |
IF = 100A |
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- |
- |
2.1 |
- |
- |
2.1 |
- |
- |
2.1 |
V |
VF |
IF = 100A |
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TC = +150oC |
- |
- |
1.7 |
- |
- |
1.7 |
- |
- |
1.7 |
V |
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IR |
VR = 400V |
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- |
- |
500 |
- |
- |
- |
- |
- |
- |
μA |
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VR= 500V |
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- |
- |
- |
- |
- |
500 |
- |
- |
- |
μA |
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VR = 600V |
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- |
- |
- |
- |
- |
- |
- |
- |
500 |
μA |
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IR |
VR = 400V |
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TC = +150oC |
- |
- |
2.0 |
- |
- |
- |
- |
- |
- |
mA |
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VR = 500V |
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TC = +150oC |
- |
- |
- |
- |
- |
2.0 |
- |
- |
- |
mA |
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VR = 600V |
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TC = +150oC |
- |
- |
- |
- |
- |
- |
- |
- |
2.0 |
mA |
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tRR |
IF = 1A, dIF/dt |
= 100A/μs |
- |
- |
50 |
- |
- |
50 |
- |
- |
50 |
ns |
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tRR |
IF = 100A, dIF/dt = 100A/μs |
- |
- |
60 |
- |
- |
60 |
- |
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60 |
ns |
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tA |
IF = 100A, dIF/dt = 100A/μs |
- |
28 |
- |
- |
28 |
- |
- |
28 |
- |
ns |
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tB |
IF = 100A, dIF/dt = 100A/μs |
- |
18 |
- |
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18 |
- |
- |
18 |
- |
ns |
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RθJC |
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- |
- |
0.71 |
- |
- |
0.71 |
- |
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0.71 |
oC/W |
DEFINITIONS
VF = Instantaneous forward voltage (pw = 300μs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy (See Figures 7 and 8). pw = pulse width.
D = duty cycle.
V1 AMPLITUDE CONTROLS IF |
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+V3 |
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V2 AMPLITUDE CONTROLS dIF/dt |
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t1 ³ 5tA(MAX) |
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R1 |
Q2 |
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L1 = SELF INDUCTANCE OF R4 |
t2 > tRR |
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+ LLOOP |
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Q1 |
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t3 > 0 |
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+V1 |
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L1 £ tA(MIN) |
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0 |
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R4 |
10 |
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LLOOP |
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dIF |
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t2 |
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IF |
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tRR |
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R2 |
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DUT |
dt |
tA |
tB |
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t1 |
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0 |
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Q4 |
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t3 |
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0.25 IRM |
0 |
C1 |
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R4 |
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IRM |
Q3 |
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VR |
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-V2 |
R3 |
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-V4 |
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VRM |
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FIGURE 1. tRR TEST CIRCUIT |
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS |
7-113
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RHRU10040, RHRU10050, RHRU10060 |
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Typical Performance Curves |
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500 |
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5000 |
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+175oC |
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+175oC |
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FORWARD CURRENT (A) |
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REVERSE CURRENT (μA) |
1000 |
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100 |
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+100oC |
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100 |
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+100oC |
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10 |
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+25oC |
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10 |
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, |
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F |
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R |
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I |
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I |
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+25oC |
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1 |
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1 |
100 |
200 |
300 |
400 |
500 |
600 |
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0 |
0.5 |
1 |
1.5 |
2 |
2.5 |
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3 |
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0 |
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VF, FORWARD VOLTAGE (V) |
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VR , REVERSE VOLTAGE (V) |
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FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD |
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FIGURE 4. TYPICAL REVERSE CURRENT vs VOLTAGE |
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VOLTAGE DROP |
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60 |
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(A) |
120 |
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t, RECOVERY TIMES (ns) |
50 |
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AVERAGE FORWARD CURRENT |
100 |
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40 |
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80 |
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DC |
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tRR |
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30 |
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60 |
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SQ. WAVE |
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20 |
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tA |
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40 |
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tB |
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10 |
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20 |
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, |
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0 |
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F(AV) |
0 |
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I |
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50 |
75 |
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125 |
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1 |
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10 |
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100 |
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25 |
100 |
150 |
175 |
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IF, FORWARD CURRENT (A) |
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TC, CASE TEMPERATURE (-oC) |
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FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD |
FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES |
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CURRENT |
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IMAX = 1A |
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L = 40mH |
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R < 0.1Ω |
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EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] |
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L |
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Q1 & Q2 ARE 1000V MOSFETs |
Q1 |
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R |
+ |
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VDD |
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130Ω |
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1MΩ |
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DUT |
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VAVL |
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Q2 |
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12V |
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130Ω |
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CURRENT |
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IL |
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IL |
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SENSE |
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I |
V |
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VDD |
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- |
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12V |
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t0 |
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t1 |
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t2 |
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t |
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FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT |
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FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVE- |
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FORMS |
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7-114 |
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