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RHRG7570

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RHRG7570, RHRG7580, S E M I C O N D U C T O R RHRG7590, RHRG75100

April 1995

75A, 700V - 1000V Hyperfast Diodes

Features

•Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <85ns

•Operating Temperature . . . . . . . . . . . . . . . . . . . . +175oC

•Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . 1000V

•Avalanche Energy Rated

•Planar Construction

Applications

•Switching Power Supplies

•Power Switching Circuits

•General Purpose

Description

RHRG7570, RHRG7580, RHRG7590 and RHRG75100 (TA49068) are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction.

These devices are intended for use as freewheeling/clamping diodes and rectiﬁers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

PACKAGING AVAILABILITY

PART NUMBER	PACKAGE	BRAND

RHRG7570	TO-247	RHRG7570

RHRG7580	TO-247	RHRG7580

RHRG7590	TO-247	RHRG7590

RHRG75100	TO-247	RHRG75100

NOTE: When ordering, use the entire part number.

Package

JEDEC STYLE TO-247

		ANODE
	CATHODE	CATHODE
	(BOTTOM	CATHODE
	(BOTTOM
	SIDE METAL)

Symbol

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Speciﬁed
				RHRG7570	RHRG7580	RHRG7590	RHRG75100	UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . .	. . VRRM			700	800	900	1000	V
Working Peak Reverse Voltage. . . . . . . . . . . . . . . . . . . . .	. . VRWM			700	800	900	1000	V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . .	VR		700	800	900	1000	V
Average Rectiﬁed Forward Current . . . . . . . . . . . . . . . . . .	. . IF(AV)			75	75	75	75	A
(TC = +52oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . .	. . . IFSM			150	150	150	150	A
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current. . . . . . . . . . . . . . . . . . .	. . . IFSM			750	750	750	750	A
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .	. . . .	PD		190	190	190	190	W
Avalanche Energy (L = 40mH) (See Figures 10 and 11). .	. . . EAVL			50	50	50	50	mj
Operating and Storage Temperature . . . . . . . . . . . . . . . . .	T	, T	J	-65 to +175	-65 to +175	-65 to +175	-65 to +175	oC
	STG		J

Copyright © Harris Corporation 1995							File Number	3923.1

7-47

Speciﬁcations RHRG7570, RHRG7580, RHRG7590, RHRG75100

Electrical Speciﬁcations TC = +25oC, Unless Otherwise Speciﬁed

											RHRG7570			RHRG7580			RHRG7590			RHRG75100

SYMBOL						TEST CONDITION					MIN	TYP	MAX	MIN	TYP	MAX	MIN	TYP	MAX	MIN	TYP	MAX	UNITS

V		I	F		= 75A, T		C	= +25oC			-	-	3.0	-	-	3.0	-	-	3.0	-	-	3.0	V
	F		F				C
		I	F		= 75A, T		C	= +150oC			-	-	2.5	-	-	2.5	-	-	2.5	-	-	2.5	V
			F				C

I	R	V		R		= 700V, T			C	= +25oC	-	-	500	-	-	-	-	-	-	-	-	-	μA
	R			R					C

		V		R		= 800V, T			C	= +25oC	-	-	-	-	-	500	-	-	-	-	-	-	μA
				R					C

		V		R		= 900V, T			C	= +25oC	-	-	-	-	-	-	-	-	500	-	-	-	μA
				R					C

		VR = 1000V, TC = +25oC									-	-	-	-	-	-	-	-	-	-	-	500	μA
I	R	V		R		= 700V, T			C	= +150oC	-	-	2.0	-	-	-	-	-	-	-	-	-	mA

		V		R		= 800V, T			C	= +150oC	-	-	-	-	-	2.0	-	-	-	-	-	-	mA
				R					C

		V		R		= 900V, T			C	= +150oC	-	-	-	-	-	-	-	-	2.0	-	-	-	mA

		VR = 1000V, TC = +150oC									-	-	-	-	-	-	-	-	-	-	-	2.0	mA
tRR		IF = 1A, dIF/dt = 100A/μs									-	-	85	-	-	85	-	-	85	-	-	85	ns
		IF = 75A, dIF/dt = 100A/μs									-	-	100	-	-	100	-	-	100	-	-	100	ns
tA		IF = 75A, dIF/dt = 100A/μs									-	55	-	-	55	-	-	55	-	-	55	-	ns
tB		IF = 75A, dIF/dt = 100A/μs									-	40	-	-	40	-	-	40	-	-	40	-	ns
QRR		IF = 75A, dIF/dt = 100A/μs									-	240	-	-	240	-	-	240	-	-	240	-	nC
CJ		VR = 10V, IF = 0A									-	220	-	-	220	-	-	220	-	-	220	-	pF
RθJC											-	-	0.8	-	-	0.8	-	-	0.8	-	-	0.8	oC/W

DEFINITIONS

VF = Instantaneous forward voltage (pw = 300μs, D = 2%). IR = Instantaneous reverse current.

tRR = Reverse recovery time (Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2).

tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge.

CJ = Junction capacitance.

RθJC = Thermal resistance junction to case.

EAVL = Controlled avalanche energy. (See Figures 10 and 11). pw = pulse width.

D = duty cycle.

V1 AMPLITUDE CONTROLS IF
V2 AMPLITUDE CONTROLS dIF/dt				+V3
L	= SELF INDUCTANCE OF			+V3
1	R4 + LLOOP	R1	Q2	t1 ³ 5tA(MAX)
		R1	Q2	t1 ³ 5tA(MAX)

				t2 > tRR
	Q1			t3 > 0
	Q1			L1 £ tA(MIN)
	+V1			L1 £ tA(MIN)

0		R4		10	dIF		tRR
0		LLOOP		IF	dIF		tRR
	t2	LLOOP		IF	dt	tA	tB
t1	R2		DUT	0
t1		Q4	DUT
		Q4					0.25 IRM
							0.25 IRM
	t3						IRM
0	C1	R4					VR
0	Q3						VR
	Q3
-V2	R3	-V4

VRM

FIGURE 1. tRR TEST CIRCUIT

FIGURE 2. tRR WAVEFORMS AND DEFINITIONS

7-48

			RHRG7570, RHRG7580, RHRG7590, RHRG75100
Typical Performance Curves
	400							1000
	400
											+175oC
							A)	100
CURRENT (A)	100						REVERSE CURRENT (μ	100
	100
								10			+100oC
								10
		+100oC
	10	+175oC	+25oC					1
	10

FORWARD,							,	0.1
							R	0.1			+25oC
							I				+25oC
F
I
	1							0.01	200		400	600	800	1000
	0	1	2	3	4	5		0	200		400	600	800	1000
	0	1	2	3	4	5
			VF , FORWARD VOLTAGE (V)						VR , REVERSE VOLTAGE (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD							FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
		VOLTAGE DROP							VOLTAGE
	100				TC = +25oC			300					TC = +100oC
	100							300
	80			tRR				250
(ns)	80			tRR			(ns)
(ns)							(ns)	200				tRR
TIMES							TIMES	200				tRR
	60
								150
t, RECOVERY				tA			t, RECOVERY	150
				tA								tB
	40			tB								tB
				tB				100				tA
												tA
	20							50
	20

	0							0
	1			10		75		1			10			75
			IF , FORWARD CURRENT (A)							IF , FORWARD CURRENT (A)
FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD							FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD
		CURRENT AT +25oC							CURRENT AT +100oC
	500				TC = +175oC
	500						(A)	75
								75

t, RECOVERY TIMES (ns)	400						AVERAGE FORWARD CURRENT	60
								60
											DC
	300			tRR				45
										SQ. WAVE
	200			tB				30
	100			tA				15

	0						(AV),	0
							F
				10		75	I		50	75	100	125	150	175
	1			10		75		25	50	75	100	125	150	175
			IF , FORWARD CURRENT (A)							TC , CASE TEMPERATURE (oC)
FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD							FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
		CURRENT AT +175oC
						7-49

RHRG7570, RHRG7580, RHRG7590, RHRG75100
Typical Performance Curves (Continued)
	800
(pF)	700
(pF)
CAPACITANCE	600
	500
	400

, JUNCTION	300
	200

J
C	100
	100
	0
	0		50	100	150	200
			VR , REVERSE VOLTAGE (V)
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Test Circuit and Waveforms
IMAX = 1A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI2 [VAVL/(VAVL - VDD)]
Q1 AND Q2 ARE 1000V MOSFETs		L	R
Q1			R	+
				VDD
130Ω	1MΩ
	1MΩ
		DUT				VAVL
Q2						VAVL
12V
		CURRENT			IL	IL
130Ω		SENSE			IL	IL
130Ω		SENSE		I	V
				I	V
				VDD
				-
12V					t0	t1	t2	t
					t0	t1	t2	t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT				FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-
					FORMS
				7-50

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