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RHRG5070

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S E M I C O N D U C T O R

April 1995

RHRG5070, RHRG5080, RHRG5090, RHRG50100

50A, 700V - 1000V Hyperfast Diodes

Features

•Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <75ns

•Operating Temperature . . . . . . . . . . . . . . . . . . . . +175oC

•Reverse Voltage Up to . . . . . . . . . . . . . . . . . . . . . . 1000V

•Avalanche Energy Rated

•Planar Construction

Applications

•Switching Power Supplies

•Power Switching Circuits

•General Purpose

Description

RHRG5070, RHRG5080, RHRG5090 and RHRG50100 (TA49066) are hyperfast diodes with soft recovery characteristics (tRR < 75ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction.

These devices are intended for use as freewheeling/clamping diodes and rectiﬁers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

PACKAGING AVAILABILITY

PART NUMBER	PACKAGE	BRAND

RHRG5070	TO-247	RHRG5070

RHRG5080	TO-247	RHRG5080

RHRG5090	TO-247	RHRG5090

RHRG50100	TO-247	RHRG50100

NOTE: When ordering, use the entire part number.

Package

JEDEC STYLE TO-247

	CATHODE	ANODE
	CATHODE
	(BOTTOM SIDE	CATHODE
	METAL)	CATHODE
	METAL)

Symbol

Absolute Maximum Ratings	TC = +25oC
		RHRG5070	RHRG5080	RHRG5090	RHRG50100
Peak Repetitive Reverse Voltage. . . . .	. . . . VRRM	700V	800V	900V	1000V
Working Peak Reverse Voltage . . . . . . .	. . . VRWM	700V	800V	900V	1000V
DC Blocking Voltage. . . . . . . . . . . . . . . .	. . . . . . VR	700V	800V	900V	1000V
Average Rectified Forward Current . . . .	. . . . IF(AV)	50A	50A	50A	50A
(TC = +60oC)		100A	100A	100A	100A
Repetitive Peak Surge Current. . . . . . . .	. . . . IFSM	100A	100A	100A	100A
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . .	. . . . IFSM	500A	500A	500A	500A
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . .	. . . . . . PD	150W	150W	150W	150W
Avalanche Energy . . . . . . . . . . . . . . . . .	. . . . EAVL	40mj	40mj	40mj	40mj
(L = 40mH)		-65oC to +175oC	-65oC to +175oC	-65oC to +175oC	-65oC to +175oC
Operating and Storage Temperature . . .	. .TSTG,TJ	-65oC to +175oC	-65oC to +175oC	-65oC to +175oC	-65oC to +175oC

Copyright © Harris Corporation 1995					File Number 3106.2
		7-36

Speciﬁcations RHRG5070, RHRG5080, RHRG5090, RHRG50100

Electrical Speciﬁcations TC = +25oC, Unless Otherwise Speciﬁed

			TEST				RHRG5070 LIMITS			RHRG5080 LIMITS			RHRG5090 LIMITS			RHRG50100 LIMITS
			TEST
SYMBOL			CONDITION				MIN	TYP	MAX	MIN	TYP	MAX	MIN	TYP	MAX	MIN	TYP	MAX	UNITS

VF	IF = 50A						-	-	3.0	-	-	3.0	-	-	3.0	-	-	3.0	V
V	I	F	= 50A	T	C	= +150oC	-	-	2.5	-	-	2.5	-	-	2.5	-	-	2.5	V
F		F			C
IR	VR = 700V						-	-	500	-	-	-		-	-	-	-	-	μA

	VR = 800V						-	-	-	-	-	500	-	-	-	-	-	-	μA

	VR = 900V						-	-	-	-	-	-	-	-	500	-	-	-	μA

	VR = 1000V						-	-	-	-	-	-	-	-	-	-	-	500	μA

IR	VR = 700V			TC = +150oC			-	-	3.0	-	-	-	-	-	-	-	-	-	mA

	VR = 800V			TC = +150oC			-	-	-	-	-	3.0	-	-	-	-	-	-	mA

	VR = 900V			TC = +150oC			-	-	-	-	-	-	-	-	3.0	-	-	-	mA

	VR = 1000V			TC = +150oC			-	-	-	-	-	-	-	-	-	-	-	3.0	mA

tRR	IF = 1A, dIF/dt = 100A/μs						-	-	75	-	-	75	-	-	75	-	-	75	ns
tRR	IF = 50A, dIF/dt = 100A/μs						-	-	95	-	-	95	-	-	95	-	-	95	ns
tA	IF = 50A, dIF/dt = 100A/μs						-	54	-	-	54	-	-	54	-	-	54	-	ns

tB	IF = 50A, dIF/dt = 100A/μs						-	32	-	-	32	-	-	32	-	-	32	-	ns

RθJC							-	-	1.0	-	-	1.0	-	-	1.0	-	-	1.0	oC/W

DEFINITIONS

VF = Instantaneous forward voltage (pw = 300μs, D = 2%).

IR = Instantaneous reverse current.

tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2).

tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).

RθJC = Thermal resistance junction to case.

EAVL = Controlled avalanche energy. (See Figures 7 and 8). pw = pulse width.

D = duty cycle.

V1 AMPLITUDE CONTROLS IF			+V3
V2 AMPLITUDE CONTROLS dIF/dt			t1 ³ 5tA(MAX)
L1 = SELF INDUCTANCE OF	R1	Q2	t1 ³ 5tA(MAX)
R4 + LLOOP			t2 > tRR
	Q1		t3 > 0		tA(MIN)
+V1	Q1		L1
			L1	£
			R	£	10	dIF		tRR
0			4		IF	dIF		tRR
			4
			LLOOP			dt	tA	tB
t2			LLOOP		0		tA	tB
	R2				0
t1	R2			DUT
t1			Q4	DUT
			Q4					0.25 IRM
								0.25 IRM
t3								IRM
0	C1		R4					VR
0	Q3
	Q3
-V2	R3		-V4
							VRM

FIGURE 1. tRR TEST CIRCUIT

FIGURE 2. tRR WAVEFORMS AND DEFINITIONS

7-37

RHRG5070, RHRG5080, RHRG5090, RHRG50100

Typical Performance Curves

150

+175oC

3000

+175oC

100

1000

(A)

μA)

FORWARD CURRENT

REVERSE CURRENT (

100

+100oC

+25oC

0.1

0.01

0.5

1.5

2.5

3.5

200

400

600

800

1000

VF, FORWARD VOLTAGE (V)

VR , REVERSE VOLTAGE (V)

FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD

FIGURE 4. TYPICAL REVERSE CURRENT vs VOLTAGE

VOLTAGE DROP

100

(A)

t, RECOVERY TIMES (ns)

tRR

AVERAGE FORWARD CURRENT

SQ. WAVE

F(AV)

125

100

150

175

IF , FORWARD CURRENT (A)

TC , CASE TEMPERATURE (oC)

FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD

FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES

CURRENT

IMAX = 1A

L = 40mH

R < 0.1Ω

EAVL = 1/2LI2 [VAVL/(VAVL - VDD)]

Q1 & Q2 ARE 1000V MOSFETs

VDD

130Ω

1MΩ

DUT

12V

VAVL

130Ω

CURRENT

SENSE

VDD

12V

FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT

FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVE-

FORMS

7-38

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