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RHRU7570

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S E M I C O N D U C T O R

April 1995

RHRU7570, RHRU7580, RHRU7590, RHRU75100

75A, 700V - 1000V Hyperfast Diodes

Features

•Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <85ns

•Operating Temperature . . . . . . . . . . . . . . . . . . . . +175oC

•Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . 1000V

•Avalanche Energy Rated

•Planar Construction

Applications

•Switching Power Supplies

•Power Switching Circuits

•General Purpose

Description

RHRU7570, RHRU7580, RHRU7590 and RHRU75100 (TA49068) are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction.

These devices are intended for use as freewheeling/clamping diodes and rectiﬁers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

PACKAGING AVAILABILITY

PART NUMBER	PACKAGE	BRAND

RHRU7570	TO-218	RHRU7570

RHRU7580	TO-218	RHRU7580

RHRU7590	TO-218	RHRU7590

RHRU75100	TO-218	RHRU75100

NOTE: When ordering, use the entire part number.

Package

JEDEC STYLE TO-218

ANODE

CATHODE (FLANGE)

Symbol

Absolute Maximum Ratings TC = +25oC, Unless Otherwise Speciﬁed
				RHRU7570	RHRU7580	RHRU7590	RHRU75100 UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . .	. . . VRRM			700	800	900	1000	V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .	. . .VRWM			700	800	900	1000	V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . .	VR		700	800	900	1000	V
Average Rectiﬁed Forward Current. . . . . . . . . . . . . . . . . . . . . . . . .	. . IF(AV)			75	75	75	75	A
(TC = +52oC)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . IFSM			150	150	150	150	A
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . .	. . . IFSM			750	750	750	750	A
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	. . . .	PD		190	190	190	190	W
Avalanche Energy (L = 40mH) (See Figures 10 and 11) . . . . . . . .	. . EAVL			50	50	50	50	mj
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . .	T	, T	J	-65 to +175	-65 to +175	-65 to +175	-65 to +175	oC
	STG		J
Copyright © Harris Corporation 1995							File Number	3925.1
	7-105

Speciﬁcations RHRU7570, RHRU7580, RHRU7590, RHRU75100

Electrical Speciﬁcations TC = +25oC, Unless Otherwise Speciﬁed

									RHRU7570			RHRU7580			RHRU7590			RHRU75100

SYMBOL				TEST CONDITION					MIN	TYP	MAX	MIN	TYP	MAX	MIN	TYP	MAX	MIN	TYP	MAX	UNITS

VF		IF = 75A, TC = +25oC							-	-	3.0	-	-	3.0	-	-	3.0	-	-	3.0	V
		I = 75A, T			C	= +150oC			-	-	2.5	-	-	2.5	-	-	2.5	-	-	2.5	V
		F			C
I	R	V	R	= 700V, T			C	= +25oC	-	-	500	-	-	-	-	-	-	-	-	-	μA
	R		R				C

		V	R	= 800V, T			C	= +25oC	-	-	-	-	-	500	-	-	-	-	-	-	μA
			R				C

		V	R	= 900V, T			C	= +25oC	-	-	-	-	-	-	-	-	500	-	-	-	μA
			R				C

		VR = 1000V, TC = +25oC							-	-	-	-	-	-	-	-	-	-	-	500	μA
I	R	V	R	= 700V, T			C	= +150oC	-	-	2.0	-	-	-	-	-	-	-	-	-	mA

		V	R	= 800V, T			C	= +150oC	-	-	-	-	-	2.0	-	-	-	-	-	-	mA
			R				C

		V	R	= 900V, T			C	= +150oC	-	-	-	-	-	-	-	-	2.0	-	-	-	mA

		VR = 1000V, TC = +150oC							-	-	-	-	-	-	-	-	-	-	-	2.0	mA
tRR		IF = 1A, dIF/dt = 100A/μs							-	-	85	-	-	85	-	-	85	-	-	85	ns
		IF = 75A, dIF/dt = 100A/μs							-	-	100	-	-	100	-	-	100	-	-	100	ns
tA		IF = 75A, dIF/dt = 100A/μs							-	55	-	-	55	-	-	55	-	-	55	-	ns
tB		IF = 75A, dIF/dt = 100A/μs							-	40	-	-	40	-	-	40	-	-	40	-	ns
QRR		IF = 75A, dIF/dt = 100A/μs							-	240	-	-	240	-	-	240	-	-	240	-	nC
CJ		VR = 10V, IF = 0A							-	220	-	-	220	-	-	220	-	-	220	-	pF
RθJC									-	-	0.8	-	-	0.8	-	-	0.8	-	-	0.8	oC/W

DEFINITIONS

VF = Instantaneous forward voltage (pw = 300μs, D = 2%). IR = Instantaneous reverse current.

tRR = Reverse recovery time (Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2).

tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge.

CJ = Junction capacitance.

RθJC = Thermal resistance junction to case.

EAVL = Controlled avalanche energy. (See Figures 10 and 11). pw = pulse width.

D = duty cycle.

V1 AMPLITUDE CONTROLS IF
V2 AMPLITUDE CONTROLS dIF/dt				+V3
L	= SELF INDUCTANCE OF			+V3
1	R4 + LLOOP	R1	Q2	t1 ³ 5tA(MAX)
		R1	Q2	t1 ³ 5tA(MAX)

				t2 > tRR
	Q1			t3 > 0
	Q1			L1 £ tA(MIN)
	+V1			L1 £ tA(MIN)

0		R4		10	dIF		tRR
0		LLOOP		IF	dIF		tRR
	t2	LLOOP		IF	dt	tA	tB
t1	R2		DUT	0
t1		Q4	DUT
		Q4					0.25 IRM
							0.25 IRM
	t3						IRM
0	C1	R4					VR
0	Q3						VR
	Q3
-V2	R3	-V4

VRM

FIGURE 1. tRR TEST CIRCUIT

FIGURE 2. tRR WAVEFORMS AND DEFINITIONS

7-106

			RHRU7570, RHRU7580, RHRU7590, RHRU75100
Typical Performance Curves
	400									1000
	400
													+175oC
(A)	100								(μA)	100
(A)									(μA)
CURRENT									CURRENT
		+100oC								10			+100oC
		+100oC								10

,FORWARD	10	+175oC	+25oC						, REVERSE	1
	10
										0.1
F									R				+25	o	C
I									I				+25		C
	1									0.01	200	400				600	800	1000
	0	1	2	3	4			5		0	200	400				600	800	1000
	0	1	2	3	4			5
			VF , FORWARD VOLTAGE (V)									VR , REVERSE VOLTAGE (V)
FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD									FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE
		VOLTAGE DROP									VOLTAGE
						T	C	= +25oC									T = +100oC
	100						C			300							C
	100									300
	80			tRR						250
(ns)	80			tRR					(ns)
TIMES									TIMES	200						tRR
	60
										150
t, RECOVERY				tA					t, RECOVERY	150
				tA												tB
	40			tB												tB
				tB						100						tA
																tA
	20									50
	20

	0									0
	1			10				75		1					10			75
			IF , FORWARD CURRENT (A)									IF , FORWARD CURRENT (A)
FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CUR-									FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CUR-
		RENT AT +25oC									RENT AT +100oC
	500			T	C	= +175oC				75
	500								(A)	75
									(A)
t, RECOVERY TIMES (ns)	400								AVERAGE FORWARD CURRENT	60
															DC
	300			tRR						45
												SQ. WAVE
	200			tB						30
	200			tB
	100			tA						15
	100			tA

									,
	0								F(AV)	0
									I	0	50	75	100			125	150	175
				10				75		25
	1									25
	1
			IF , FORWARD CURRENT (A)									TC , CASE TEMPERATURE (oC)
FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD									FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
		CURRENT AT +175oC
								7-107

RHRU7570, RHRU7580, RHRU7590, RHRU75100
Typical Performance Curves (Continued)
	800
(pF)	700
(pF)
CAPACITANCE	600
	500
	400

, JUNCTION	300
	200

J
C	100
	100
	0
	0		50	100	150	200
			VR , REVERSE VOLTAGE (V)
FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE
IMAX = 1A
L = 40mH
R < 0.1Ω
EAVL = 1/2LI2 [VAVL/(VAVL - VDD)]
Q1 AND Q2 ARE 1000V MOSFETs		L	R
Q1			R	+
				VDD
130Ω	1MΩ
	1MΩ
		DUT				VAVL
Q2						VAVL
12V
		CURRENT			IL	IL
130Ω		SENSE			IL	IL
130Ω		SENSE		I	V
				I	V
				VDD
				-
12V					t0	t1	t2	t
					t0	t1	t2	t
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT				FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVE-
					FORMS
				7-108

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