S E M I C O N D U C T O R
April 1995
RHRU15090,
RHRU150100
150A, 900V - 1000V Hyperfast Diodes
Features
• Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<90ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175oC
• Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . . .1000V
•Avalanche Energy Rated
•Planar Construction
Applications
•Switching Power Supplies
•Power Switching Circuits
•General Purpose
Description
RHRU15090 and RHRU150100 (TA49072) are hyperfast diodes with soft recovery characteristics (tRR < 90ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
PACKAGING AVAILABILITY
PART NUMBER |
PACKAGE |
BRAND |
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RHRU15090 |
TO-218 |
RHRU15090 |
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RHRU150100 |
TO-218 |
RHR150100 |
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NOTE: When ordering, use the entire part number.
Package
JEDEC STYLE TO-218
ANODE
CATHODE (FLANGE)
Symbol
K |
A |
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Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified |
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RHRU15090 |
RHRU150100 |
UNITS |
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Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . VRRM |
900 |
1000 |
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V |
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Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . VRWM |
900 |
1000 |
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V |
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DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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VR |
900 |
1000 |
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V |
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Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . IF(AV) |
150 |
150 |
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A |
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(TC = +42oC) |
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Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . IFSM |
300 |
300 |
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A |
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(Square Wave, 20kHz) |
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Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . IFSM |
1500 |
1500 |
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A |
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(Halfwave, 1 Phase, 60Hz) |
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Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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PD |
375 |
375 |
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W |
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Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . . . . EAVL |
50 |
50 |
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mj |
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Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . . . T |
, T |
J |
-65 to +175 |
-65 to +175 |
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oC |
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STG |
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Copyright © Harris Corporation 1995 |
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File Number |
3589.2 |
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7-121 |
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Specifications RHRU15090, RHRU150100
Electrical Specifications |
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TC = +25oC, Unless Otherwise Specified |
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LIMITS |
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RHRU15090 |
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RHRU150100 |
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SYMBOL |
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TEST CONDITION |
MIN |
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TYP |
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MAX |
MIN |
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TYP |
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MAX |
UNITS |
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V |
F |
I |
F |
= 150A, T |
= +25oC |
- |
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- |
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3.0 |
- |
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- |
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3.0 |
V |
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C |
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V |
F |
I |
F |
= 150A, T |
= +150oC |
- |
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- |
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2.5 |
- |
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- |
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2.5 |
V |
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C |
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I |
R |
V |
R |
= 900V, T |
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= +25oC |
- |
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- |
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500 |
- |
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- |
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- |
μA |
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C |
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V |
R |
= 1000V, T = +25oC |
- |
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- |
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- |
- |
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- |
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500 |
μA |
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C |
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I |
R |
V |
R |
= 900V, T |
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= +150oC |
- |
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- |
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3.0 |
- |
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- |
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mA |
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C |
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V |
R |
= 1000V, T |
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= +150oC |
- |
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- |
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- |
- |
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- |
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3.0 |
mA |
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C |
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tRR |
IF = 1A, dIF/dt = 100A/μs |
- |
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- |
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90 |
- |
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- |
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90 |
ns |
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IF = 150A, dIF/dt = 100A/μs |
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100 |
- |
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100 |
ns |
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tA |
IF = 150A, dIF/dt = 100A/μs |
- |
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65 |
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- |
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65 |
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ns |
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tB |
IF = 150A, dIF/dt = 100A/μs |
- |
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30 |
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- |
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30 |
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ns |
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RθJC |
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- |
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- |
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0.4 |
- |
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0.4 |
oC/W |
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DEFINITIONS |
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VF = Instantaneous forward voltage (pw = 300μs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy (See Figures 7 and 8). pw = pulse width.
D = duty cycle.
V1 AMPLITUDE CONTROLS IF |
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+V3 |
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V2 AMPLITUDE CONTROLS dIF/dt |
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t1 ³ 5tA(MAX) |
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R1 |
Q2 |
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L1 = SELF INDUCTANCE OF R4 |
t2 > tRR |
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+LLOOP |
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Q1 |
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t3 > 0 |
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+V1 |
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L1 £ tA(MIN) |
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0 |
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R4 |
10 |
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LLOOP |
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dIF |
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tRR |
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t2 |
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IF |
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dt |
tA |
tB |
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t1 |
R2 |
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DUT |
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0 |
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Q4 |
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t3 |
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0.25 IRM |
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IRM |
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C1 |
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R4 |
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0 |
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Q3 |
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-V2 |
R3 |
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-V4 |
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VR |
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VRM |
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FIGURE 1. tRR TEST CIRCUIT |
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS |
7-122
RHRU15090, RHRU150100
Typical Performance Curves
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500 |
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(A) |
100 |
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CURRENT |
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+175oC |
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+100oC |
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FORWARD, |
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10 |
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+25oC |
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F |
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I |
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1 |
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0 |
0.5 |
1.0 |
1.5 |
2.0 |
2.5 |
3.0 |
3.5 |
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VF, FORWARD VOLTAGE (V) |
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FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD
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VOLTAGE DROP |
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120 |
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100 |
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(ns) |
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TIMES |
80 |
tRR |
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RECOVERYt, |
60 |
tB |
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tA |
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40 |
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20 |
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0 |
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1 |
10 |
100 |
150 |
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IF, FORWARD CURRENT (A) |
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FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT
IMAX = 1A |
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L = 40mH |
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R < 0.1Ω |
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EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] |
L |
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Q1 & Q2 ARE 1000V MOSFETs |
Q |
R + |
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1 |
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VDD |
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130Ω |
1MΩ |
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DUT |
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12V |
Q2 |
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130Ω |
CURRENT |
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SENSE |
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VDD |
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12V |
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FIGURE 7. AVALANCHE ENERGY TEST CIRCUIT
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3000 |
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1000 |
+175oC |
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(μA) |
100 |
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CURRENT |
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10 |
+100oC |
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REVERSE, |
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1.0 |
+25oC |
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R |
0.1 |
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I |
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0.01 |
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0 |
200 |
400 |
600 |
800 |
1000 |
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VR, REVERSE VOLTAGE (V) |
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FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE
(A) |
160 |
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CURRENT |
120 |
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FORWARD |
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DC |
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80 |
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SQ. WAVE |
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AVERAGE, |
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40 |
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F(AV) |
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I |
0 |
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50 |
75 |
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125 |
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25 |
100 |
150 |
175 |
TC, CASE TEMPERATURE (oC)
FIGURE 6. CURRENT DERATING CURVE FOR ALL TYPES
VAVL
IL
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t0 |
t1 |
t2 |
t |
FIGURE 8. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS
7-123
