RHRD640, RHRD650, RHRD660, 
S E M I C O N D U C T O R RHRD640S, RHRD650S, RHRD660S
April 1995
6A, 400V - 600V Hyperfast Diodes
Features
• Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . . . . . . . . <30ns
o
• Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C
• Reverse Voltage Up To. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
•Avalanche Energy Rated
•Planar Construction
Applications
•Switching Power Supplies
•Power Switching Circuits
•General Purpose
Description
RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S and RHRD660S are hyperfast diodes with soft recovery characteristics (tRR < 30ns). They have half the recovery time of ultrafast diodes and are sil icon nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
PACKAGE AVAILABILITY
PART NUMBER |
PACKAGE |
BRAND |
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RHRD640 |
TO-251 |
RHR640 |
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RHRD650 |
TO-251 |
RHR650 |
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RHRD660 |
TO-251 |
RHR660 |
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RHRD640S |
TO-252 |
RHR640 |
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RHRD650S |
TO-252 |
RHR650 |
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RHRD660S |
TO-252 |
RHR660 |
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NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252 variant in tape and reel, e.g. RHRD660S9A.
Formerly developmental type TA49057.
Package
JEDEC STYLE TO-251
ANODE
CATHODE
CATHODE (FLANGE)
JEDEC STYLE TO-252
CATHODE (FLANGE)
CATHODE
ANODE
Symbol
K |
A |
Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified |
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RHRD640 |
RHRD650 |
RHRD660 |
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RHRD640S |
RHRD650S |
RHRD660S |
UNITS |
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . |
. . .VRRM |
400 |
500 |
600 |
V |
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Working Peak Reverse Voltage . . . . . . . . . . . . . . . . |
. . VRWM |
400 |
500 |
600 |
V |
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DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . |
VR |
400 |
500 |
600 |
V |
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Average Rectified Forward Current . . . . . . . . . . . . . . |
. . IF(AV) |
6 |
6 |
6 |
A |
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(TC = +152oC) |
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Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . |
. . .IFSM |
12 |
12 |
12 |
A |
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(Square Wave, 20kHz) |
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Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . |
. . .IFSM |
60 |
60 |
60 |
A |
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(Halfwave, 1 Phase, 60Hz) |
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Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . |
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PD |
50 |
50 |
50 |
W |
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Avalanche Energy (See Figures 10 and 11). . . . . . . . |
. . EAVL |
10 |
10 |
10 |
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Operating and Storage Temperature . . . . . . . . . . . . |
T |
, T |
J |
-65 to +175 |
-65 to +175 |
-65 to +175 |
oC |
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STG |
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Copyright © Harris Corporation 1995 |
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File Number |
3746.2 |
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7-13 |
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Specifications RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S
Electrical Specifications TC = +25oC, Unless Otherwise Specified
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TEST |
RHRD640, RHRD640S |
RHRD650, RHRD650S |
RHRD660, RHRD660S |
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SYMBOL |
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CONDITION |
MIN |
TYP |
MAX |
MIN |
TYP |
MAX |
MIN |
TYP |
MAX |
UNITS |
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VF |
IF = 6A, TC = +25oC |
- |
- |
2.1 |
- |
- |
2.1 |
- |
- |
2.1 |
V |
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IF = 6A, TC = +150oC |
- |
- |
1.7 |
- |
- |
1.7 |
- |
- |
1.7 |
V |
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I |
R |
V |
R |
= 400V, T |
C |
= +25oC |
- |
- |
100 |
- |
- |
- |
- |
- |
- |
μA |
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V |
R |
= 500V, T |
C |
= +25oC |
- |
- |
- |
- |
- |
100 |
- |
- |
- |
μA |
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V |
R |
= 600V, T |
C |
= +25oC |
- |
- |
- |
- |
- |
- |
- |
- |
100 |
μA |
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I |
R |
V |
R |
= 400V, T |
C |
= +150oC |
- |
- |
500 |
- |
- |
- |
- |
- |
- |
μA |
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V |
R |
= 500V, T |
C |
= +150oC |
- |
- |
- |
- |
- |
500 |
- |
- |
- |
μA |
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V |
R |
= 600V, T |
C |
= +150oC |
- |
- |
- |
- |
- |
- |
- |
- |
500 |
μA |
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tRR |
IF = 1A, dIF/dt = 200A/μs |
- |
- |
30 |
- |
- |
30 |
- |
- |
30 |
ns |
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IF = 6A, dIF/dt = 200A/μs |
- |
- |
35 |
- |
- |
35 |
- |
- |
35 |
ns |
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tA |
IF = 6A, dIF/dt = 200A/μs |
- |
16 |
- |
- |
16 |
- |
- |
16 |
- |
ns |
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tB |
IF = 6A, dIF/dt = 200A/μs |
- |
8.5 |
- |
- |
8.5 |
- |
- |
8.5 |
- |
ns |
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QRR |
IF = 6A, dIF/dt = 200A/μs |
- |
45 |
- |
- |
45 |
- |
- |
45 |
- |
nC |
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CJ |
VR = 10V, IF = 0A |
- |
20 |
- |
- |
20 |
- |
- |
20 |
- |
pF |
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RθJC |
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- |
- |
3 |
- |
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3 |
- |
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3 |
oC/W |
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DEFINITIONS
VF = Instantaneous forward voltage (pw = 300μs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
QRR = Reverse recovery charge.
CJ = Junction capacitance.
RθJC = Thermal resistance junction to case.
EAVL = Controlled avalanche energy. (See Figures 10 and 11). pw = pulse width.
D = duty cycle.
V1 AMPLITUDE CONTROLS IF |
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V2 AMPLITUDE CONTROLS dIF/dt |
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+V3 |
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L |
= SELF INDUCTANCE OF |
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1 |
R4 + LLOOP |
R1 |
Q2 |
t1 ³ 5tA(MAX) |
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t2 > tRR |
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Q1 |
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t3 > 0 |
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L1 £ tA(MIN) |
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+V1 |
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0 |
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R4 |
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10 |
dIF |
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tRR |
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LLOOP |
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IF |
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t2 |
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dt |
tA |
tB |
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t1 |
R2 |
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DUT |
0 |
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Q4 |
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0.25 IRM |
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t3 |
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IRM |
0 |
C1 |
R4 |
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VR |
Q3 |
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-V2 |
R3 |
-V4 |
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VRM |
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FIGURE 1. tRR TEST CIRCUIT |
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS |
7-14
RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S
Typical Performance Curves
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30 |
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(A) |
10 |
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FORWARD CURRENT |
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+175oC |
+100oC |
+25oC |
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, |
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F |
1 |
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I |
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0.5 0 |
0.5 |
1 |
1.5 |
2 |
2.5 |
3 |
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VF, FORWARD VOLTAGE (V) |
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FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD |
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VOLTAGE DROP |
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30 |
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TC = +25oC, dIF/dt = 200A/μs |
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(ns) |
25 |
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tRR |
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TIMES |
20 |
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15 |
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RECOVERY |
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tB |
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tA |
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10 |
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t, |
5 |
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0 |
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0.5 |
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1 |
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6 |
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IF , FORWARD CURRENT (A) |
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FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD |
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CURRENT AT +25oC |
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T |
= +175oC, dI |
/dt = 200A/μs |
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75 |
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C |
F |
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(ns) |
60 |
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tRR |
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TIMES |
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45 |
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RECOVERY |
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30 |
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tA |
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t, |
15 |
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tB |
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0 |
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1 |
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6 |
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0.5 |
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IF , FORWARD CURRENT (A)
FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +175oC
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1000 |
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+175oC |
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A) |
100 |
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(μ |
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CURRENT |
10 |
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+100oC |
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REVERSE, |
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1 |
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R |
0.1 |
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+25oC |
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I |
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0.01 |
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0 |
100 |
200 |
300 |
400 |
500 |
600 |
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VR, REVERSE VOLTAGE (V) |
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FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE |
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VOLTAGE |
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50 |
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TC = +100oC, dIF/dt = 200A/μs |
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(ns) |
40 |
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tRR |
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TIMES |
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30 |
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RECOVERY |
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tB |
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20 |
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tA |
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t, |
10 |
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0 |
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0.5 |
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1 |
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6 |
IF , FORWARD CURRENT (A)
FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD
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CURRENT AT +100oC |
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(A) |
6 |
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CURRENT |
5 |
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DC |
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4 |
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FORWARD |
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SQ. WAVE |
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3 |
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AVERAGE |
2 |
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1 |
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, |
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F(AV) |
0 |
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I |
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165 |
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175 |
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140 |
145 |
150 |
155 |
160 |
170 |
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TC , CASE TEMPERATURE (oC) |
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FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES
7-15
RHRD640, RHRD650, RHRD660, RHRD640S, RHRD650S, RHRD660S |
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Typical Performance Curves (Continued) |
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50 |
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(pF) |
40 |
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CAPACITANCE |
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30 |
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JUNCTION |
20 |
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10 |
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, |
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J |
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C |
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0 |
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0 |
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50 |
100 |
150 |
200 |
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VR , REVERSE VOLTAGE (V) |
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FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE |
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Test Circuit and Waveforms |
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IMAX = 1A |
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L = 40mH |
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R < 0.1Ω |
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EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] |
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Q1 AND Q2 ARE 1000V MOSFETs |
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L |
R |
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Q1 |
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+ |
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VDD |
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130Ω |
1MΩ |
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DUT |
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VAVL |
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Q2 |
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12V |
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CURRENT |
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IL |
IL |
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130Ω |
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SENSE |
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I |
V |
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VDD |
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- |
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12V |
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t0 |
t1 |
t2 |
t |
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT |
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE |
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WAVEFORMS |
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7-16 |
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