S E M I C O N D U C T O R
September 1995
RHRU150120
150A, 1200V Hyperfast Diode
Features
•Hyperfast with Soft Recovery . . . . . . . . . . . . . . . <100ns
•Operating Temperature . . . . . . . . . . . . . . . . . . . . +175oC
•Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
•Avalanche Energy Rated
•Planar Construction
Applications
•Switching Power Supplier
•Power Switching Circuits
•General Purpose
Description
The RHRU150120 are hyperfast diodes with soft recovery characteristics (tRR < 100ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
PACKAGE AVAILABILITY
PART NUMBER |
PACKAGE |
BRAND |
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RHRU150120 |
TO-218 |
RHR150120 |
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NOTE: When ordering, use the entire part number.
Formerly developmental type TA49074.
Package
SINGLE LEAD JEDEC STYLE TO-218
ANODE
CATHODE
(FLANGE)
Symbol
K |
A |
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Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified |
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RHRU150120 |
UNITS |
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Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . VRRM |
1200 |
V |
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Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . VRWM |
1200 |
V |
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DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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VR |
1200 |
V |
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Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . |
. . .IF(AV) |
150 |
A |
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TC = 37.5oC |
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Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . IFSM |
300 |
A |
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(Square Wave, 20kHz) |
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Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . IFSM |
1500 |
A |
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(Halfwave, 1 phase, 60Hz) |
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Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . |
PD |
375 |
W |
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Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . |
. . . EAVL |
50 |
mj |
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Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . |
T |
, T |
J |
-65 to +175 |
oC |
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STG |
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Copyright © Harris Corporation 1995 |
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File Number 4049 |
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1
Specifications RHRU150120
Electrical Specifications TC = +25oC, Unless Otherwise Specified
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RHRU150120 LIMITS |
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SYMBOL |
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TEST CONDITION |
MIN |
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TYP |
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MAX |
UNITS |
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V |
I |
F |
= 150A, T |
C |
= +25oC |
- |
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3.2 |
V |
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F |
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I |
F |
= 150A, T |
C |
= +150oC |
- |
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2.6 |
V |
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I |
V |
R |
= 1200V, T |
C |
= +25oC |
- |
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250 |
μA |
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R |
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VR = 1200V, TC = +150oC |
- |
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3.0 |
mA |
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tRR |
IF = 1A, dIF/dt = 200A/μs |
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100 |
ns |
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IF = 150A, dIF/dt = 200A/μs |
- |
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125 |
ns |
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tA |
IF = 150A, dIF/dt = 200A/μs |
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70 |
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ns |
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tB |
IF = 150A, dIF/dt = 200A/μs |
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40 |
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ns |
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QRR |
IF = 150A, dIF/dt = 200A/μs |
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460 |
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nC |
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CJ |
VR = 10V, IF = 0A |
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420 |
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pF |
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R |
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- |
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0.4 |
oC/W |
θJC |
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DEFINITIONS
VF = Instantaneous forward voltage (pw = 300μs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
EAVL = Controlled Avalanche Energy (See Figures 10 and 11). pw = pulse width.
D = duty cycle.
V1 AMPLITUDE CONTROLS IF |
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V2 AMPLITUDE CONTROLS dIF/dt |
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+V3 |
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L |
= SELF INDUCTANCE OF |
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1 |
R4 + LLOOP |
R1 |
Q2 |
t1 ³ 5tA(MAX) |
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t2 > tRR |
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Q1 |
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t3 > 0 |
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L1 £ tA(MIN) |
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+V1 |
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0 |
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R4 |
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10 |
dIF |
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tRR |
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LLOOP |
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IF |
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t2 |
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dt |
tA |
tB |
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t1 |
R2 |
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DUT |
0 |
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Q4 |
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0.25 IRM |
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t3 |
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IRM |
0 |
C1 |
R4 |
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VR |
Q3 |
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-V2 |
R3 |
-V4 |
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VRM
FIGURE 1. tRR TEST CIRCUIT |
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS |
2
RHRU150120
Typical Performance Curves
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500 |
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2000 |
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+175oC |
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1000 |
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(A) |
100 |
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(μA) |
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100 |
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CURRENT |
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CURRENT |
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10 |
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+100oC |
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FORWARD, |
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REVERSE, |
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10 |
+175oC |
+100oC |
+25oC |
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1.0 |
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+25oC |
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F |
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R |
0.1 |
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I |
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I |
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1 |
0.5 |
1 |
1.5 |
2 |
2.5 |
3 |
3.5 |
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0.01 |
200 |
400 |
600 |
800 |
1000 |
1200 |
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0 |
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0 |
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VF, FORWARD VOLTAGE (V) |
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VR, REVERSE VOLTAGE (V) |
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FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD |
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FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE |
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VOLTAGE DROP |
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VOLTAGE |
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125 |
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TC = +25oC, dIF/dt = 200A/μs |
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(ns) |
100 |
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TIMES |
75 |
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tRR |
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RECOVERYt, |
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50 |
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tA |
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tB |
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25 |
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0 |
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1 |
10 |
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50 |
150 |
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IF , FORWARD CURRENT (A) |
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FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD |
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CURRENT AT 25oC |
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T |
= +175oC, dI |
/dt = 200A/μs |
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400 |
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C |
F |
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300 |
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tRR |
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200 |
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tA |
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100 |
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tB |
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0 |
10 |
50 |
150 |
1 |
IF , FORWARD CURRENT (A)
FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT 175oC
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250 |
TC = +100oC, dIF/dt = 200A/μs |
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(ns) |
200 |
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TIMES |
150 |
tRR |
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RECOVERYt, |
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100 |
tA |
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50 |
tB |
0
1 |
10 |
50 |
150 |
IF , FORWARD CURRENT (A)
FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT 100oC
(A) |
150 |
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CURRENT |
125 |
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100 |
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DC |
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FORWARD |
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75 |
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SQ. WAVE |
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AVERAGE |
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50 |
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, |
25 |
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F(AV) |
0 |
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I |
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25 |
50 |
75 |
100 |
125 |
150 |
175 |
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TC , CASE TEMPERATURE (oC) |
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FIGURE 8. CURRENT DERATING CURVE
3
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RHRU150120 |
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Typical Performance Curves |
(Continued) |
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1500 |
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(pF) |
1200 |
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CAPACITANCE |
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900 |
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JUNCTION |
600 |
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300 |
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, |
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J |
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C |
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0 |
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50 |
100 |
150 |
200 |
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0 |
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VR , REVERSE VOLTAGE (V) |
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FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE |
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VOLTAGE |
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L = 40mH |
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R < 0.1Ω |
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EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] |
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Q1 AND Q2 ARE 1000V MOSFETs |
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Q1 |
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L |
R |
+ |
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VDD |
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130Ω |
1MΩ |
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DUT |
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VAVL |
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Q2 |
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12V |
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CURRENT |
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IL |
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IL |
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130Ω |
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SENSE |
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I |
V |
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VDD |
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12V |
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t0 |
t1 |
t2 |
t |
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT |
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE |
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WAVEFORMS |
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RHRU150120
Packaging
E |
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A |
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A1 |
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ØP |
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Q
H1
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D |
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TERM. 2 |
q |
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L1 |
L2 |
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TERM. 1 |
R |
L |
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L3 |
15o |
c |
b |
J1 |
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TERM 1 - ANODE |
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TERM 2 - CATHODE |
TO-218
SINGLE LEAD JEDEC STYLE TO-218 PLASTIC PACKAGE
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INCHES |
MILLIMETERS |
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SYMBOL |
MIN |
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MAX |
MIN |
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MAX |
NOTES |
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A |
0.185 |
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0.195 |
4.70 |
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4.95 |
- |
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A1 |
0.058 |
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0.062 |
1.48 |
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1.57 |
- |
b |
0.433 |
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0.443 |
11.00 |
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11.25 |
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c |
0.018 |
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0.022 |
0.46 |
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0.55 |
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D |
0.800 |
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0.820 |
20.32 |
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20.82 |
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E |
0.615 |
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0.625 |
15.63 |
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15.87 |
2 |
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H1 |
- |
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0.330 |
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8.38 |
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J1 |
0.115 |
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0.125 |
2.93 |
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3.17 |
4 |
L |
0.635 |
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0.655 |
16.13 |
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16.63 |
- |
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L1 |
- |
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0.130 |
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3.30 |
- |
L2 |
- |
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0.034 |
- |
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0.86 |
- |
L3 |
0.195 |
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0.205 |
4.96 |
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5.20 |
- |
ØP |
0.159 |
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0.163 |
4.04 |
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4.14 |
- |
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Q |
0.176 |
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0.186 |
4.48 |
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4.72 |
2 |
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q |
1.080 |
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1.088 |
27.44 |
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27.63 |
- |
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R |
0.078 |
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0.082 |
1.99 |
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2.08 |
- |
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NOTES:
1.No current JEDEC outline for this package.
2.Tab outline optional within boundaries of dimensions E and Q.
3.Maximum radius of 0.050 inches (1.27mm) on all body edges and corners.
4.Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D.
5.Controlling dimension: Inch.
6.Revision 1 dated 1-93.
All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
Sales Office Headquarters
For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS
NORTH AMERICA |
EUROPE |
ASIA |
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Harris Semiconductor |
Harris Semiconductor |
Harris Semiconductor PTE Ltd. |
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P. O. Box 883, Mail Stop 53-210 |
Mercure Center |
No. 1 Tannery Road |
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Melbourne, FL 32902 |
100, Rue de la Fusee |
Cencon 1, #09-01 |
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TEL: 1-800-442-7747 |
1130 Brussels, Belgium |
Singapore 1334 |
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(407) 729-4984 |
TEL: (32) 2.724.2111 |
TEL: (65) 748-4200 |
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FAX: (407) 729-5321 |
FAX: (32) 2.724.22.05 |
FAX: (65) 748-0400 |
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