S E M I C O N D U C T O R
October 1995
RHR1Y75120CC
75A, 1200V Hyperfast Dual Diode
Features
•Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <85ns
•Operating Temperature . . . . . . . . . . . . . . . . . . . . +175oC
•Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
•Avalanche Energy Rated
•Planar Construction
Applications
•Switching Power Supplies
•Power Switching Circuits
•General Purpose
Description
The RHR1Y75120CC is a hyperfast dual diode with soft recovery characteristics (tRR < 85ns). It has half the recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction.
This device is intended for use as freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
PACKAGING AVAILABILITY
PART NUMBER |
PACKAGE |
BRAND |
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RHR1Y75120CC |
TO-264AA |
RHR75120C |
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NOTE: When ordering, use the entire part number.
Formerly developmental type TA49042.
Package
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JEDEC TO-264AA |
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ANODE 2 |
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CATHODE |
CATHODE |
ANODE 1 |
(BOTTOM SIDE |
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METAL) |
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Symbol
K
A1 |
A2 |
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Absolute Maximum Ratings (Per Leg) TC = +25oC, Unless Otherwise Specified |
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RHR1Y75120CC |
UNITS |
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Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . VRRM |
1200 |
V |
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Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . VRWM |
1200 |
V |
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DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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VR |
1200 |
V |
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Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . |
. . .IF(AV) |
75 |
A |
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TC = 42oC |
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Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . IFSM |
150 |
A |
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Square Wave, 20kHz |
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Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . IFSM |
500 |
A |
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Halfwave, 1 Phase, 60Hz |
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Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
. . . . . |
PD |
190 |
W |
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Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . |
. . . EAVL |
50 |
mJ |
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Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . |
T |
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J |
-65 to +175 |
oC |
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STG |
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Copyright © Harris Corporation 1995 |
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File Number 4048 |
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1
Specifications RHR1Y75120CC
Electrical Specifications |
(per leg) TC = +25oC, Unless Otherwise Specified |
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SYMBOL |
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TEST CONDITION |
MIN |
TYP |
MAX |
UNITS |
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V |
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F |
= 75A, T |
C |
= +25oC |
- |
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3.2 |
V |
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F |
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IF |
= 75A, TC = +150oC |
- |
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2.6 |
V |
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I |
V |
R |
= 1200V, T |
C |
= +25oC |
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250 |
μA |
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R |
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VR = 1200V, TC = +150oC |
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2.0 |
mA |
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tRR |
IF = 1A, dIF/dt = 200A/μs |
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85 |
ns |
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IF = 75A, dIF/dt = 200A/μs |
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100 |
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tA |
IF = 75A, dIF/dt = 200A/μs |
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45 |
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ns |
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tB |
IF = 75A, dIF/dt = 200A/μs |
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40 |
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ns |
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QRR |
IF = 75A, dIF/dt = 200A/μs |
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380 |
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nC |
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CJ |
VR = 10V, IF = 0A |
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225 |
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pF |
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R |
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- |
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0.8 |
oC/W |
θJC |
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DEFINITIONS
VF = Instantaneous forward voltage (pw = 300μs, D = 2%).
IR = Instantaneous reverse current.
tRR = Reverse recovery time (See Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2).
tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2).
QRR = Reverse recovery charge.
CJ = Junction Capacitance.
RθJC = Thermal resistance junction to case.
EAVL = Controlled Avalanche Energy (See Figures 10 and 11). pw = pulse width.
D = duty cycle.
V1 AMPLITUDE CONTROLS IF |
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V2 AMPLITUDE CONTROLS dIF/dt |
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+V3 |
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L1 = SELF INDUCTANCE OF |
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R4 + LLOOP |
R |
1 |
Q2 |
t |
1 |
5t |
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A(MAX) |
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t2 > tRR |
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Q1 |
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t3 > 0 |
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+V1 |
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L1 ≤ tA(MIN) |
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0 |
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R4 |
10 |
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dIF |
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tRR |
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LLOOP |
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IF |
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t2 |
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dt |
tA |
tB |
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R2 |
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t1 |
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DUT |
0 |
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Q4 |
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0.25 IRM |
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t3 |
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IRM |
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C1 |
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R4 |
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VR |
Q3 |
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-V2 |
R3 |
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-V4 |
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VRM |
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FIGURE 1. tRR TEST CIRCUIT |
FIGURE 2. tRR WAVEFORMS AND DEFINITIONS |
2
RHR1Y75120CC
Typical Performance Curves
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400 |
(A) |
100 |
CURRENT |
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FORWARD, |
+175oC +100oC |
+25oC |
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10 |
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IF
1
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0.5 |
1 |
1.5 |
2 |
2.5 |
3 |
3.5 |
4 |
4.5 |
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VF , FORWARD VOLTAGE |
(V) |
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FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP
TC = +25oC, dIF/dt = 200A/μs
100
(ns) |
80 |
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tRR |
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TIMES |
60 |
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RECOVERYt, |
20 |
tA |
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40 |
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tB |
0
1 |
10 |
75 |
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IF , FORWARD CURRENT (A) |
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FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC
1000
+175oC |
(μA) |
100 |
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CURRENT |
10 |
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+100oC |
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REVERSE, |
1 |
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R |
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I |
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+25oC |
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0.1 |
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0 |
200 |
400 |
600 |
800 |
1000 |
1200 |
VR , REVERSE VOLTAGE (V)
FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE
TC = +100oC, dIF/dt = 200A/μs
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200 |
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(ns) |
160 |
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TIMES |
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tRR |
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120 |
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RECOVERY |
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80 |
tA |
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t, |
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tB |
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40 |
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0
1 |
10 |
75 |
IF , FORWARD CURRENT (A)
FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +100oC
TC = +175oC, dIF/dt = 200A/μs
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350 |
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300 |
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(ns) |
250 |
tRR |
TIMES |
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200 |
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RECOVERYt, |
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150 |
tB |
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tA |
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100 |
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50 |
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1 |
10 |
75 |
IF , FORWARD CURRENT (A)
FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +175oC
IF(AV) , AVERAGE FORWARD CURRENT (A)
75
60
DC
45
SQ. WAVE
30
15
0
25 |
50 |
75 |
100 |
125 |
150 |
175 |
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TC , CASE TEMPERATURE (oC) |
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FIGURE 8. CURRENT DERATING CURVE
3
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RHR1Y75120CC |
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Typical Performance Curves |
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750 |
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(pF) |
600 |
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CAPACITANCE |
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450 |
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, JUNCTION |
300 |
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150 |
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J |
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C |
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0 |
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50 |
100 |
150 |
200 |
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VR , REVERSE VOLTAGE (V) |
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FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE |
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VOLTAGE |
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L = 40mH |
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R < 0.1Ω |
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EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] |
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Q1 AND Q2 ARE 1000V MOSFETs |
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Q1 |
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R |
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VDD |
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130Ω |
1MΩ |
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DUT |
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VAVL |
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Q2 |
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12V |
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CURRENT |
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IL |
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130Ω |
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SENSE |
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VDD |
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12V |
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t0 |
t1 |
t2 |
t |
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT |
FIGURE 11. AVALANCHE CURRENT AND VOLTAGE |
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WAVEFORMS |
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4 |
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RHR1Y75120CC
Packaging |
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TERM. 4 |
TO-264AA |
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E |
A |
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ØS |
3 LEAD JEDEC TO-264AA PLASTIC PACKAGE |
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ØP |
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INCHES |
MILLIMETERS |
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Q |
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SYMBOL |
MIN |
MAX |
MIN |
MAX |
NOTES |
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A |
0.185 |
0.209 |
4.70 |
5.31 |
- |
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ØR |
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Q1 |
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b |
0.037 |
0.055 |
0.94 |
1.40 |
3, 4 |
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D |
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b1 |
0.087 |
0.102 |
2.21 |
2.59 |
2, 3 |
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ØR 1 |
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b2 |
0.110 |
0.126 |
2.79 |
3.20 |
2, 3 |
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c |
0.017 |
0.029 |
0.43 |
0.74 |
2, 3, 4 |
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b1 |
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D |
1.007 |
1.047 |
25.58 |
26.59 |
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L1 |
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b2 |
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E |
0.760 |
0.799 |
19.30 |
20.29 |
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e |
0.215 BSC |
5.46 BSC |
5 |
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b |
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J1 |
0.102 |
0.118 |
2.59 |
3.00 |
6 |
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2 |
3 |
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2 |
1 |
L |
0.779 |
0.842 |
19.79 |
21.39 |
- |
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L1 |
0.087 |
0.102 |
2.21 |
2.59 |
2 |
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J1 |
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BACK VIEW |
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ØP |
0.122 |
0.138 |
3.10 |
3.51 |
- |
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Q |
0.240 |
0.256 |
6.10 |
6.50 |
- |
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Q1 |
0.330 |
0.346 |
8.38 |
8.79 |
- |
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ØR |
0.155 |
0.187 |
3.94 |
4.75 |
- |
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ØR1 |
0.085 |
0.093 |
2.16 |
2.36 |
- |
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ØS |
0.270 |
0.280 |
6.87 |
7.12 |
- |
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NOTES: |
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1. These dimensions are within allowable dimensions of Rev. B of |
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JEDEC TO-264AA outline dated 11-93. |
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2. Lead dimension and finish uncontrolled in L1. |
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3. Lead dimension (without solder). |
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4. Add typically 0.002 inches (0.05mm) for solder coating. |
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5. Position of lead to be measured 0.250 inches (6.35mm) from |
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bottom of dimension D. |
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6. Position of lead to be measured 0.100 inches (2.54mm) from |
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bottom of dimension D. |
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7. Controlling dimension: Inch. |
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8. Revision 1 dated 5-95. |
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All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Harris Semiconductor products are sold by description only. Harris Semiconductor reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Harris is believed to be accurate and reliable. However, no responsibility is assumed by Harris or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Harris or its subsidiaries.
Sales Office Headquarters
For general information regarding Harris Semiconductor and its products, call 1-800-4-HARRIS
NORTH AMERICA |
EUROPE |
ASIA |
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Harris Semiconductor |
Harris Semiconductor |
Harris Semiconductor PTE Ltd. |
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P. O. Box 883, Mail Stop 53-210 |
Mercure Center |
No. 1 Tannery Road |
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Melbourne, FL 32902 |
100, Rue de la Fusee |
Cencon 1, #09-01 |
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TEL: 1-800-442-7747 |
1130 Brussels, Belgium |
Singapore 1334 |
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(407) 729-4984 |
TEL: (32) 2.724.2111 |
TEL: (65) 748-4200 |
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FAX: (407) 729-5321 |
FAX: (32) 2.724.22.05 |
FAX: (65) 748-0400 |
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